X-ray Determination and Finite-Element Modeling of Stress in Passivated Al-0.5%Cu Lines During Thermal Cycling.

1993 ◽  
Vol 309 ◽  
Author(s):  
Paul R. Besser ◽  
Anne Sauter Mack ◽  
David Fraser ◽  
John C. Bravman

AbstractWe have measured the principal strain state of AI-0.5%Cu lines passivated with silicon nitride directly and used it to calculate the stress state. The stress was determined as the lines were thermally cycled from room temperature to 450°C. The general stress-temperature behavior shows good fundamental agreement with that calculated using finite-element methods, although the magnitude of the stresses measured with x-rays is less than that predicted by modeling due to stressinduced voiding in the lines. This is shown with a high voltage scanning transmission electron microscope (STEM) operated in the backscattering mode.

Author(s):  
John B. Vander Sande ◽  
Thomas F. Kelly ◽  
Douglas Imeson

In the scanning transmission electron microscope (STEM) a fine probe of electrons is scanned across the thin specimen, or the probe is stationarily placed on a volume of interest, and various products of the electron-specimen interaction are then collected and used for image formation or microanalysis. The microanalysis modes usually employed in STEM include, but are not restricted to, energy dispersive X-ray analysis, electron energy loss spectroscopy, and microdiffraction.


2009 ◽  
Vol 15 (S2) ◽  
pp. 642-643
Author(s):  
M Bolorizadeh ◽  
HF Hess

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009


2012 ◽  
Vol 18 (S2) ◽  
pp. 974-975 ◽  
Author(s):  
M. Watanabe ◽  
A. Yasuhara ◽  
E. Okunishi

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.


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