scholarly journals Characterization of Polysilicon Films by Raman Spectroscopy and Transmission Electron Microscopy: a Comparative Study

1993 ◽  
Vol 324 ◽  
Author(s):  
David R. Tallant ◽  
Thomas J. Headley ◽  
John W. Medernach ◽  
Franz Geyling
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Raman Spectra ◽  
Cross Section ◽  
Nanometer Scale ◽  
Sampling Depth ◽  
Transmission Electron ◽  
Polysilicon Films

AbstractSamples of chemically-vapor-deposited sub-micrometer-thick films of polysilicon were analyzed by transmission electron microscopy (TEM) in cross-section and by Raman spectroscopy with illumination at their surface. TEM and Raman spectroscopy both find varying amounts of polycrystalline and amorphous silicon in the wafers. Raman spectra obtained using blue, green and red excitation wavelengths to vary the Raman sampling depth are compared with TEM crosssections of these films. Some films have Raman spectra with a band near 497 cm−1, corresponding to numerous nanometer-scale faulted regions in the TEM micrographs.

Study and characterization of the carbon-based nanoparticles obtained from PET

2013 ◽  
Vol 1549 ◽  
pp. 149-154
Author(s):  
Alena Borisovna Kharissova ◽  
Edgar de Casas Ortiz ◽  
Oxana V. Kharissova ◽  
Ubaldo Ortiz Mendez ◽  
Boris I. Kharisov
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Normal Pressure ◽  
Transmission Electron ◽  
Polymer Type ◽  
Scanning Electron ◽  
Carbon Based

ABSTRACTMaterial like PET {polyethylene terephthalate (C10H8O4)n} are usually thrown away present in glasses of refreshments, water bottles between others which are hard to be degraded. However, this material can be recycled and used to acquire nanostructures. During this investigation the objective was to obtain nanoparticles and carbon based nanostructures from the polymer type PET by means of microwave irradiation at the temperature of 260°C at normal pressure and at 600 psi in the presence of acids, ethylene glycol and by means of calcinations. The obtained nanoparticles of ultrananocrystalline diamonds were studied by means of scanning electron microscopy (SEM), high-resolution transmission electron microscopy (TEM), and Raman spectroscopy.

Raman Spectroscopy Analysis of Nitrogen Ion Implantation in Silicon and Correlation with Transmission Electron Microscopy

1992 ◽  
Vol 279 ◽  
Author(s):  
A. PéRez-Rodríguez ◽  
A. Romano-Rodríguez ◽  
J. R. Morante ◽  
J. Esteve ◽  
J. Montserrat
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Raman Spectra ◽  
Annealing Treatment ◽  
Structural Features ◽  
Spectroscopy Analysis ◽  
Subsurface Region ◽  
Transmission Electron ◽  
Nitrogen Ion

ABSTRACTIn this work Si samples implanted with nitrogen (N+ or N2+) at a dose of 1017 cm−2 are characterized by Raman spectroscopy and cross section transmission electron microscopy (XTEM). The correlation between the Raman spectra obtained with different excitation wavelengths and XTEM observations allows to determine the structural features related to the layers contributing to the total spectra. The evolution of these features with the annealing treatments (up to 1150°C) is studied. The results obtained show, after the annealing treatment at the highest temperature, the presence of silicon nitride precipitates in the silicon subsurface region, and the formation of a nitrogen rich polycrystalline Si layer with Si3N4 grains. The Raman spectra from the subsurface region show a remaining shift of -0.15 cm−1 when compared to the spectra from unimplanted Si. This shift, together with the similar shape of both Raman lines, suggests the presence in this region of an average tensile stress of 37.5 MPa.

Structural Characterization of Nc-Si/A-Sio2 Superlattices Subjected To Thermal Treatment

1998 ◽  
Vol 536 ◽  
Author(s):  
G. F. Grom ◽  
L. Tsybeskov ◽  
K. D. Hirschman ◽  
P. M. Fauchet ◽  
J. P. McCaffrey ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Defect Density ◽  
High Temperature Annealing ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Si Nanocrystals

AbstractThe morphology of nanocrystalline (nc)-Si/amorphous (a)-SiO2 superlattices (SLs) is studied using Raman spectroscopy in the acoustic and optical phonon ranges, transmission electron microscopy (TEM), and atomic force microscopy (AFM). It is demonstrated that high temperature annealing (up to 1100°C) and oxidation in O2/H2O ambient do not destroy the SL structure, which retains its original periodicity and nc-Si/a-SiO2 interface abruptness. It is found that oxidation at high temperatures reduces the defect density in nc-Si/a-SiO2 SLs and induces the lateral coalescence of Si nanocrystals (NCs). The size, shape, packing density, and crystallographic orientation of the Si nanocrystals are studied as a function of the oxidation time.

scholarly journals Characterization of structural alteration in diamond turned silicon crystal by means of micro raman spectroscopy and transmission electron microscopy

2005 ◽  
Vol 8 (3) ◽  
pp. 261-268
Author(s):  
Renato Goulart Jasinevicius ◽  
Arthur José Vieira Porto ◽  
Paulo Sérgio Pizani ◽  
Jaime Gilberto Duduch ◽  
Francisco José Santos
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Silicon Crystal ◽  
Structural Alteration ◽  
Micro Raman Spectroscopy ◽  
Transmission Electron

Structure of Oxides Grown on Zr-20Nb Alloy

1994 ◽  
Vol 357 ◽  
Author(s):  
O.T. Woo ◽  
D.J. Lockwood ◽  
Y.P. Lin ◽  
V.F. Urbanic
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Raman Spectra ◽  
High Symmetry ◽  
X Ray Diffraction ◽  
Short Term ◽  
X Ray ◽  
Transmission Electron

AbstractOxides grown on Zr-20Nb were characterized by Raman Spectroscopy (RS), X-Ray Diffraction (XRD) and Transmission Electron Microscopy (TEM). These oxides were steamformed at 400°C, water-formed at 360 °C and at 300 °C, and air-grown at 400°C. For the oxides grown after relatively short exposures at 360°C and at 400°C, Raman spectra revealed broad peaks at 260 and 660 cm− indicating a crystal structure with high symmetry. Comparison with reference Raman spectra of cubic (c), tetragonal (t), and monoclinic (m) ZrO2 suggested that the oxide was predominantly nearly-cubic (tetragonal with c/a ratio ≈ 1), with minor amounts of moxide. The tetragonality is found to be consistent with TEM analyses and XRD results which showed the presence of a doublet near 2θ ° 74°. The crystal structure in the short-term exposed oxides is interpreted in terms of a tetragonal distortion arising from the displacement of oxygen atoms within the cubic ZrO2 crystal structure. For oxides grown after longer periods of exposure at 300°C and at 400°C, RS and XRD indicate increased amounts of m-oxide.

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