Growth and Characterization of Si-GaP and Si-GaP-Si Heterostructures

1993 ◽  
Vol 334 ◽  
Author(s):  
N. Dietz ◽  
S. Habermehl ◽  
J. T. Kelliher ◽  
G. Lucovsky ◽  
K. J. Bachmann
Keyword(s):  
Epitaxial Growth ◽  
Chemical Beam Epitaxy ◽  
Si Substrate ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Amorphous Sic ◽  
Secondary Ion ◽  
Source Materials

AbstractThe low temperature epitaxial growth of Si / GaP / Si heterostructures is investigated with the aim using GaP as a dielectric isolation layer for Si circuits. GaP layers have been deposited on Si(100) surfaces by chemical beam epitaxy (CBE) using tertiarybutyl phosphine (TBP) and triethylgallium (TEG) as source materials. The influence of the cleaning and passivation of the GaP surface has been studied in-situ by AES and LEED, with high quality epitaxial growth proceeding on vicinal GaP(100) substrates. Si / GaP / Si heterostructures have been investigated by cross sectional high resolution transmission electron microscope (HRTEM) and secondary ion mass spectroscope (SIMS). These methods reveal the formation of an amorphous SiC interlayer between the Si substrate and GaP film due to diffusion of carbon generated in the decomposition of the metalorganic precursors at the surface to the GaP/Si interface upon prolonged growth (layer thickness > 300Å). The formation of twins parallel to {111} variants in the GaP epilayer are extended into the subsequently grown Si film with minor generation of new twins.

Low Temperature Silicon Epitaxial Growth by Plasma Enhanced Chemical Vapor Deposition From SiH4/He/H2

1991 ◽  
Vol 235 ◽  
Author(s):  
Yung-Jen Lin ◽  
Ming-Deng Shieh ◽  
Chiapying Lee ◽  
Tri-Rung Yew
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Ex Situ ◽  
Epitaxial Layers ◽  
Cross Sectional ◽  
Transmission Electron

ABSTRACTSilicon epitaxial growth on silicon wafers were investigated by using plasma enhanced chemical vapor deposition from SiH4/He/H2. The epitaxial layers were growm at temperatures of 350°C or lower. The base pressure of the chamber was greater than 2 × 10−5 Torr. Prior to epitaxial growth, the wafer was in-situ cleaned by H2 baking for 30 min. The epi/substrate interface and epitaxial layers were observed by cross-sectional transmission electron microscopy (XTEM). Finally, the influence of the ex-situ and in-situ cleaning processes on the qualities of the interface and epitaxial layers was discussed in detail.

Orientational and Microstructural Evolution During Epitaxial Growth of Cu on Si(001) by Sputter Deposition

1992 ◽  
Vol 280 ◽  
Author(s):  
I. Hashim ◽  
B. Park ◽  
H. A. Atwater
Keyword(s):  
Epitaxial Growth ◽  
Ion Beam ◽  
High Energy ◽  
Sputter Deposition ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Plan View ◽  
Transmission Electron

ABSTRACTEpitaxial Cu thin films have been grown on H-terminated Si(OOl) substrates at room temperature by D.C. ion-beam sputter deposition in ultrahigh vacuum. The development of orientation and microstructure during epitaxial growth from the initial stages of Cu growth up to Cu thicknesses of few hundred nm has been investigated. Analysis by in-situ reflection high energy electron diffraction, thin film x-ray diffraction, and plan-view and cross-sectional transmission electron microscopy indicates that the films are well textured with Cu(001)∥ Si(001) and Cu[100]∥ Si[110]. Interestingly, it is found that a distribution of orientations occurs at the early stages of Cu epitaxy on Si(001) surface, and that a (001) texture emerges gradually with increasing Cu thickness. The effect of silicide formation and deposition conditions on the crystalline quality of Cu epitaxy is also discussed.

Low Temperature Silicon Epitaxial Growth by Plasma Enhanced Chemical Vapor Deposition from SiH4/He/H2

1991 ◽  
Vol 236 ◽  
Author(s):  
Yung-Jen Lin ◽  
Ming-Deng Shieh ◽  
Chiapying Lee ◽  
Tri-Rung Yew
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Ex Situ ◽  
Epitaxial Layers ◽  
Cross Sectional ◽  
Transmission Electron

AbstractSilicon epitaxial growth on silicon wafers were investigated by using plasma enhanced chemical vapor deposition from SiH4/He/H2. The epitaxial layers were growm at temperatures of 350°C or lower. The base pressure of the chamber was greater than 2 × 10−5 Torr. Prior to epitaxial growth, the wafer was in-situ cleaned by H2 baking for 30 min. The epi/substrate interface and epitaxial layers were observed by cross-sectional transmission electron microscopy (XTEM). Finally, the influence of the ex-situ and in-situ cleaning processes on the qualities of the interface and epitaxial layers was discussed in detail.

In Situ Fabrication and Characterization of (NiCr)Al-Al2O3 Nanocomposite by Mechanical Alloying

2012 ◽  
Vol 16 ◽  
pp. 21-27 ◽  
Author(s):  
Amir Reza Shirani-Bidabadi ◽  
Ali Shokuhfar ◽  
Mohammad Hossein Enayati ◽  
Mazda Biglari
Keyword(s):  
Electron Microscopy ◽  
Mechanical Alloying ◽  
Structural Changes ◽  
Formation Mechanisms ◽  
Cross Sectional ◽  
Molar Ratios ◽  
Transmission Electron ◽  
Powder Particles

In this research, the formation mechanisms of a (NiCr)Al-Al2O3 nanocomposite were investigated. The structural changes of powder particles during mechanical alloying were studied by X-ray difractometry (XRD) and the morphology and cross sectional microstructure of powder particles were characterized by transmission electron microscopy (TEM) and scanning electron microscopy (SEM). The methodology involved mechanical alloying of NiO, Cr, and Al with molar ratios of 3:3:8. During mechanical alloying, NiO was first quickly reduced by aluminum atoms to produce NiAl nanocrystalline and Al2O3. Subsequently, and when a longer milling time was applied, chromium atoms diffused into the NiAl lattice. The heat treatment of this structure led to the formation of the (NiCr)Al intermetallic compound as well as Al2O3 with crystalline sizes of 23 nm and 58 nm, respectively.

Formation of The Interface between InP and Arsenic Based Alloys by Chemical Beam Epitaxy

1992 ◽  
Vol 263 ◽  
Author(s):  
M. C. Tamargo ◽  
M.J.S.P. Brasil ◽  
R. E. Nahory ◽  
D. E. Aspnes ◽  
B. Philips ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Beam Epitaxy ◽  
Interface Chemistry ◽  
Switching Sequence ◽  
Surface Steps ◽  
Transmission Electron ◽  
Secondary Ion ◽  
Low Temperature Photoluminescence

ABSTRACTWe investigate the formation of inAs-rich layers at the interface between InP and arsenicbased Ill-V alloys grown by chemical beam epitaxy (CBE). In-situ spectroscopic ellipsometry, low temperature photoluminescence, secondary ion mass spectrometry and transmission electron microscopy were used to characterize the formation of these layers. We present evidence for interfacial layer roughness that depends strongly on growth temperature and on the presence of surface steps, and show that modifications of the interface chemistry and of the gas-switching sequence can reduce interfacial layer thicknesses.

characterization of amorphization in Ni-Ti multilayers

1988 ◽  
Vol 46 ◽  
pp. 452-453
Author(s):  
K. B. Alexander ◽  
F. J. Walker ◽  
R. A. McKee ◽  
F. A. List
Keyword(s):  
Amorphous Film ◽  
High Energy ◽  
Film Deposition ◽  
Cross Sectional ◽  
Transmission Electron ◽  
20 Nm ◽  
Elemental Layer ◽  
Deposited Films

The formation of amorphous alloys through the solid-state reaction of crystalline multilayers has recently been studied by several groups. In each of these studies, the multilayers were entirely amorphous when there were less than 4-10 planes in each layer. Layer thicknesses larger than this resulted in crystalline layers, presumably separated by an amorphous film approximately 4-10 layers thick. Our intent was to measure the thickness of the amorphous film in Ni-Ti multilayer specimens with a wavelength (thickness of Ni + Ti layers) of 20 nm, or approximately 40 planes per elemental layer. In situ Reflection High Energy Electron Diffraction (RHEED) was performed during the film deposition and transmission electron microscopy of cross-sectional specimens was used to examine the as-deposited films.Nickel and titanium layers were sequentially deposited onto a 50 nm amorphous Ni-Ti codeposit on an unheated (001) silicon substrate in the ORNL Molecular Beam Epitaxy (MBE) facility with a vacuum < 10-9 torr.

An Electron Microscopic Characterization of Mbe-Grown ZnSe/CaAs and ZnSe/Ge Heterointerfaces

1990 ◽  
Vol 198 ◽  
Author(s):  
S.B. Sant ◽  
R.W. Smith ◽  
G.C. Weatherly
Keyword(s):  
Molecular Beam ◽  
Nucleation And Growth ◽  
Epitaxial Films ◽  
Defect Characterization ◽  
Initial Growth ◽  
Electron Microscopic ◽  
Cross Sectional ◽  
Transmission Electron

ABSTRACTMolecular beam epitaxy (MBE) grown ZnSe/GaAs and ZnSe/Ge heterointerfaces have been studied by transmission electron microscopy (TEM). Defect characterization of cross-sectional and planar specimens showed that ZnSe epitaxial films contain numerous twins that predominantly arise at the interface. Planar specimens of ZnSe/Ge were in-situ TEM annealed, for 5.5 hours at 873K. The twins are thermally very stable which would indicate that they arise during the growth process. The occurrence of these twins in the ZnSe film is explained by nucleation and growth of normal and twinned nuclei. Some of the ZnSe films grown on (10O)Ge substrates have low-angle boundaries indicating that the initial growth of the film is by the formation of islands.

Sb-Doped Polycrystalline Si Obtained by Means of Sb and Si Thin-Film Reactions

1987 ◽  
Vol 106 ◽  
Author(s):  
S. F. Gong ◽  
A. E. Robertsson ◽  
S.-E. Hörnström ◽  
G. Radnoczi ◽  
H. T. G. Hentzell
Keyword(s):  
Thin Film ◽  
Electron Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Si Substrate ◽  
Transmission Electron ◽  
Diffusion Source ◽  
Amorphous Si ◽  
P Type ◽  
Secondary Ion

ABSTRACTWe have grown Sb-doped poly-Si by thin-film reactions between Sb and amorphous Si (a-Si). The reactions and microstructures of the films were investigated by transmission electron microscopy (TEM) during in situ annealing and Auger electron spectroscopy (AES). The reactions either resulted in an amorphous Sb-Si (a-Sb-Si) alloy or caused crystallization of a-Si at low temperatures, depending on the film thickness of the a-Si layer as well as the heating rate. The electrical properties of the as-deposited and the annealed thin multi-layers deposited on SiO2 layer were determined using Hall measurements. After annealing at 1375 K for 60 minutes, Sb-doped poly-Si with a resistivity of 1.4×10−2 ohm-cm was obtained. A p-n junction was formed in a p-type Si substrate by using an a-Si/Sb/a-Si multi-layer as a diffusion source. The doping concentration in the Si substrate was obtained using secondary ion mass spectrometry (SIMS).

In-Situ Annealing Transmission Electron Microscopy Study of Pd/Ge/Pd/GaAs Interfacial Reactions

1999 ◽  
Vol 589 ◽  
Author(s):  
F. Radulescu ◽  
J.M. Mccarthy ◽  
E. A. Stach
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solid State ◽  
Epitaxial Growth ◽  
Ohmic Contact ◽  
Ion Beam ◽  
Solid State Reactions ◽  
Cross Sectional ◽  
Transmission Electron

AbstractIn-situ TEM annealing experiments on the Pd (20 nm) / a-Ge (150 nm) / Pd (50 nm) GaAs ohmic contact system have permitted real time determination of the evolution of contact microstructure. As-deposited cross-sectional samples of equal thickness were prepared using a focused ion beam (FIB) method and then subjected to in-situ annealing at temperatures between 130-400 °C. Excluding Pd-GaAs interactions, four sequential solid state reactions were observed during annealing of the Pd:Ge thin films. First, interdiffusion of the Pd and Ge layers occurred, followed by formation of the hexagonal Pd2Ge phase. This hexagonal phase then transformed into orthorhombic PdGe, followed by solid state epitaxial growth of Ge at the contact / GaAs interface. The kinetics of the solid state reactions, which occur during ohmic contact formation, were determined by measuring the grain growth rates associated with each phase from the videotape observations. These data agreed with a previous study that measured the activation energies through a differential scanning calorimetry (DSC) method. We established that the Ge transport to the GaAs interface was dependent upon the grain size of the PdGe phase. The nucleation and growth of this phase was demonstrated to have a significant effect on the solid phase epitaxial growth of Ge on GaAs. These findings allowed us to engineer an improved two step annealing procedure that would control the shape and size of the PdGe grains. Based on these results, we have established the suitability of combining FIB sample preparation with in-situ cross-sectional transmission electron microscopy (TEM) annealing for studying thin film solid-state reactions.

The Use of Advanced Analytical Techniques for Characterization of the Chemical, Physical, and Crystallographic Nature of a Surface

1973 ◽  
Vol 31 ◽  
pp. 132-133 ◽  
Author(s):  
R. E. Herfert
Keyword(s):  
Surface Characterization ◽  
Analytical Techniques ◽  
X Ray Diffraction ◽  
Depth Of Penetration ◽  
X Ray ◽  
The Past ◽  
Transmission Electron ◽  
Scanning Electron

Studies of the nature of a surface, either metallic or nonmetallic, in the past, have been limited to the instrumentation available for these measurements. In the past, optical microscopy, replica transmission electron microscopy, electron or X-ray diffraction and optical or X-ray spectroscopy have provided the means of surface characterization. Actually, some of these techniques are not purely surface; the depth of penetration may be a few thousands of an inch. Within the last five years, instrumentation has been made available which now makes it practical for use to study the outer few 100A of layers and characterize it completely from a chemical, physical, and crystallographic standpoint. The scanning electron microscope (SEM) provides a means of viewing the surface of a material in situ to magnifications as high as 250,000X.

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