Formation of The Interface between InP and Arsenic Based Alloys by Chemical Beam Epitaxy

1992 ◽  
Vol 263 ◽  
Author(s):  
M. C. Tamargo ◽  
M.J.S.P. Brasil ◽  
R. E. Nahory ◽  
D. E. Aspnes ◽  
B. Philips ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Beam Epitaxy ◽  
Interface Chemistry ◽  
Switching Sequence ◽  
Surface Steps ◽  
Transmission Electron ◽  
Secondary Ion ◽  
Low Temperature Photoluminescence

ABSTRACTWe investigate the formation of inAs-rich layers at the interface between InP and arsenicbased Ill-V alloys grown by chemical beam epitaxy (CBE). In-situ spectroscopic ellipsometry, low temperature photoluminescence, secondary ion mass spectrometry and transmission electron microscopy were used to characterize the formation of these layers. We present evidence for interfacial layer roughness that depends strongly on growth temperature and on the presence of surface steps, and show that modifications of the interface chemistry and of the gas-switching sequence can reduce interfacial layer thicknesses.

scholarly journals In Situ Correlative Microscopy Combining Transmission Electron Microscopy and Secondary Ion Mass Spectrometry

2018 ◽  
Vol 24 (S1) ◽  
pp. 380-381 ◽  
Author(s):  
Santhana Eswara ◽  
Lluis Yedra ◽  
Alisa Pshenova ◽  
Varun Sarbada ◽  
Jean-Nicolas Audinot ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Mass Spectrometry ◽  
Transmission Electron Microscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Correlative Microscopy ◽  
Transmission Electron ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

Growth and Characterization of Si-GaP and Si-GaP-Si Heterostructures

1993 ◽  
Vol 334 ◽  
Author(s):  
N. Dietz ◽  
S. Habermehl ◽  
J. T. Kelliher ◽  
G. Lucovsky ◽  
K. J. Bachmann
Keyword(s):  
Epitaxial Growth ◽  
Chemical Beam Epitaxy ◽  
Si Substrate ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Amorphous Sic ◽  
Secondary Ion ◽  
Source Materials

AbstractThe low temperature epitaxial growth of Si / GaP / Si heterostructures is investigated with the aim using GaP as a dielectric isolation layer for Si circuits. GaP layers have been deposited on Si(100) surfaces by chemical beam epitaxy (CBE) using tertiarybutyl phosphine (TBP) and triethylgallium (TEG) as source materials. The influence of the cleaning and passivation of the GaP surface has been studied in-situ by AES and LEED, with high quality epitaxial growth proceeding on vicinal GaP(100) substrates. Si / GaP / Si heterostructures have been investigated by cross sectional high resolution transmission electron microscope (HRTEM) and secondary ion mass spectroscope (SIMS). These methods reveal the formation of an amorphous SiC interlayer between the Si substrate and GaP film due to diffusion of carbon generated in the decomposition of the metalorganic precursors at the surface to the GaP/Si interface upon prolonged growth (layer thickness > 300Å). The formation of twins parallel to {111} variants in the GaP epilayer are extended into the subsequently grown Si film with minor generation of new twins.

Sb-Doped Polycrystalline Si Obtained by Means of Sb and Si Thin-Film Reactions

1987 ◽  
Vol 106 ◽  
Author(s):  
S. F. Gong ◽  
A. E. Robertsson ◽  
S.-E. Hörnström ◽  
G. Radnoczi ◽  
H. T. G. Hentzell
Keyword(s):  
Thin Film ◽  
Electron Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Si Substrate ◽  
Transmission Electron ◽  
Diffusion Source ◽  
Amorphous Si ◽  
P Type ◽  
Secondary Ion

ABSTRACTWe have grown Sb-doped poly-Si by thin-film reactions between Sb and amorphous Si (a-Si). The reactions and microstructures of the films were investigated by transmission electron microscopy (TEM) during in situ annealing and Auger electron spectroscopy (AES). The reactions either resulted in an amorphous Sb-Si (a-Sb-Si) alloy or caused crystallization of a-Si at low temperatures, depending on the film thickness of the a-Si layer as well as the heating rate. The electrical properties of the as-deposited and the annealed thin multi-layers deposited on SiO2 layer were determined using Hall measurements. After annealing at 1375 K for 60 minutes, Sb-doped poly-Si with a resistivity of 1.4×10−2 ohm-cm was obtained. A p-n junction was formed in a p-type Si substrate by using an a-Si/Sb/a-Si multi-layer as a diffusion source. The doping concentration in the Si substrate was obtained using secondary ion mass spectrometry (SIMS).

Role of boundaries in the crystallization of amorphous films

1988 ◽  
Vol 46 ◽  
pp. 626-627
Author(s):  
D. A. Smith
Keyword(s):  
Low Temperature ◽  
Amorphous State ◽  
Nucleation And Growth ◽  
Amorphous Films ◽  
Island Nucleation ◽  
Surface Steps ◽  
Transmission Electron ◽  
Component Systems ◽  
Temperature Deposition

The nucleation and growth processes which lead to the formation of a thin film are particularly amenable to investigation by transmission electron microscopy either in situ or subsequent to deposition. In situ studies have enabled the observation of island nucleation and growth, together with addition of atoms to surface steps. This paper is concerned with post-deposition crystallization of amorphous alloys. It will be argued that the processes occurring during low temperature deposition of one component systems are related but the evidence is mainly indirect. Amorphous films result when the deposition conditions such as low temperature or the presence of impurities (intentional or unintentional) preclude the atomic mobility necessary for crystallization. Representative examples of this behavior are CVD silicon grown below about 670°C, metalloids, such as antimony deposited at room temperature, binary alloys or compounds such as Cu-Ag or Cr O2, respectively. Elemental metals are not stable in the amorphous state.

Optics-Free Visualization of Proteins in Single Cells by Time of Flight-Secondary Ion Mass Spectrometry Coupled with Genetically Encoded Chemical Tags

2020 ◽  
Author(s):  
Feifei Jia ◽  
Jie Wang ◽  
Yanyan Zhang ◽  
Qun Luo ◽  
Luyu Qi ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Single Cells ◽  
Time Of Flight ◽  
E Coli ◽  
Tof Sims ◽  
Ion Mass Spectrometry ◽  
Chemical Tags ◽  
Secondary Ion

<p></p><p><i>In situ</i> visualization of proteins of interest at single cell level is attractive in cell biology, molecular biology and biomedicine, which usually involves photon, electron or X-ray based imaging methods. Herein, we report an optics-free strategy that images a specific protein in single cells by time of flight-secondary ion mass spectrometry (ToF-SIMS) following genetic incorporation of fluorine-containing unnatural amino acids as a chemical tag into the protein via genetic code expansion technique. The method was developed and validated by imaging GFP in E. coli and human HeLa cancer cells, and then utilized to visualize the distribution of chemotaxis protein CheA in E. coli cells and the interaction between high mobility group box 1 protein and cisplatin damaged DNA in HeLa cells. The present work highlights the power of ToF-SIMS imaging combined with genetically encoded chemical tags for <i>in situ </i>visualization of proteins of interest as well as the interactions between proteins and drugs or drug damaged DNA in single cells.</p><p></p>

Effects of Concurrent Co or Ti Silicidation on Transient Diffusion and End-of-Range Damage in Phosphorus Implanted Silicon

1992 ◽  
Vol 262 ◽  
Author(s):  
J.W. Honeycutt ◽  
J. Ravi ◽  
G. A. Rozgonyi
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Complete Removal ◽  
Dislocation Loops ◽  
Enhanced Diffusion ◽  
Depth Profiles ◽  
Enhanced Dissolution ◽  
Implantation Damage ◽  
Transmission Electron ◽  
Defect Behavior ◽  
Secondary Ion

ABSTRACTThe effects of Ti and Co silicidation on P+ ion implantation damage in Si have been investigated. After silicidation of unannealed 40 keV, 2×1015 cm-2 P+ implanted junctions by rapid thermal annealing at 900°C for 10–300 seconds, secondary ion mass spectrometry depth profiles of phosphorus in suicided and non-silicided junctions were compared. While non-silicided and TiSi2 suicided junctions exhibited equal amounts of transient enhanced diffusion behavior, the junction depths under COSi2 were significantly shallower. End-of-range interstitial dislocation loops in the same suicided and non-silicided junctions were studied by planview transmission electron microscopy. The loops were found to be stable after 900°C, 5 minute annealing in non-silicided material, and their formation was only slightly effected by TiSi2 or COSi2 silicidation. However, enhanced dissolution of the loops was observed under both TiSi2 and COSi2, with essentially complete removal of the defects under COSi2 after 5 minutes at 900°C. The observed diffusion and defect behavior strongly suggest that implantation damage induced excess interstitial concentrations are significantly reduced by the formation and presence of COSi2, and to a lesser extent by TiSi2. The observed time-dependent defect removal under the suicide films suggests that vacancy injection and/or interstitial absorption by the suicide film continues long after the suicide chemical reaction is complete.

scholarly journals Triple Oxygen Isotope Measurements by Multi-Collector Secondary Ion Mass Spectrometry

2021 ◽  
Vol 8 ◽  
Author(s):  
Nordine Bouden ◽  
Johan Villeneuve ◽  
Yves Marrocchi ◽  
Etienne Deloule ◽  
Evelyn Füri ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Oxygen Isotope ◽  
Spatial Resolution ◽  
Secondary Ion Mass Spectrometry ◽  
Small Radius ◽  
Large Radius ◽  
Ion Mass Spectrometry ◽  
Secondary Ion ◽  
Isotope Measurements

Secondary ion mass spectrometry (SIMS) is a powerful technique for in situ triple oxygen isotope measurements that has been used for more than 30 years. Since pioneering works performed on small-radius ion microprobes in the mid-80s, tremendous progress has been made in terms of analytical precision, spatial resolution and analysis duration. In this respect, the emergence in the mid-90s of the large-radius ion microprobe equipped with a multi-collector system (MC-SIMS) was a game changer. Further developments achieved on CAMECA MC-SIMS since then (e.g., stability of the electronics, enhanced transmission of secondary ions, automatic centering of the secondary ion beam, enhanced control of the magnetic field, 1012Ω resistor for the Faraday cup amplifiers) allow nowadays to routinely measure oxygen isotopic ratios (18O/16O and 17O/16O) in various matrices with a precision (internal error and reproducibility) better than 0.5‰ (2σ), a spatial resolution smaller than 10 µm and in a few minutes per analysis. This paper focuses on the application of the MC-SIMS technique to the in situ monitoring of mass-independent triple oxygen isotope variations.

scholarly journals Изменение структуры и свойств приповерхностного слоя Si, имплантированного Zn, в зависимости от флюенса облучения ионами -=SUP=-132-=/SUP=-Xe-=SUP=-26+-=/SUP=- с энергией 167 МэВ

2019 ◽  
Vol 53 (3) ◽  
pp. 332
Author(s):  
В.В. Привезенцев ◽  
В.С. Куликаускас ◽  
В.А. Скуратов ◽  
О.С. Зилова ◽  
А.А. Бурмистров ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Zinc Oxide ◽  
Cross Section ◽  
Secondary Ion Mass Spectrometry ◽  
Sample Surface ◽  
Transmission Electron ◽  
Oxide Phases ◽  
Secondary Ion ◽  
Surface Pores ◽  
Scanning Electron

AbstractSingle-crystal n -Si(100) wafers are implanted with ^64Zn^+ ions with an energy of 50 keV and dose of 5 × 10^16 cm^–2. Then the samples are irradiated with ^132Xe^26+ ions with an energy of 167 MeV in the range of fluences from 1 × 10^12 to 5 × 10^14 cm^–2. The surface and cross section of the samples are visualized by scanning electron microscopy and transmission electron microscopy. The distribution of implanted Zn atoms is studied by time-of-flight secondary-ion mass spectrometry. After irradiation with Xe, surface pores and clusters consisting of a Zn–ZnO mixture are observed at the sample surface. In the amorphized subsurface Si layer, zinc and zinc-oxide phases are detected. After irradiation with Xe with a fluence of 5 × 10^14 cm^–2, no zinc or zinc-oxide clusters are detected in the samples by the methods used in the study.

Determination of the Distribution of Ion Implantation Boron in Silicon

2000 ◽  
Vol 650 ◽  
Author(s):  
Te-Sheng Wang ◽  
A.G. Cullis ◽  
E.J.H. Collart ◽  
A.J. Murrell ◽  
M.A. Foad
Keyword(s):  
Electron Microscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Low Energy ◽  
Concentration Profiles ◽  
Impurity Profile ◽  
Transmission Electron ◽  
Device Applications ◽  
P Type ◽  
Secondary Ion

ABSTRACTBoron is the most important p-type dopant in Si and it is essential that, especially for low energy implantation, both as-implanted B distributions and those produced by annealing should be characterized in very great detail to obtain the required process control for advanced device applications. While secondary ion mass spectrometry (SIMS) is ordinarily employed for this purpose, in the present studies implant concentration profiles have been determined by direct B imaging with approximately nanometer depth and lateral resolution using energy-filtered imaging in the transmission electron microscopy. The as-implanted B impurity profile is correlated with theoretical expectations: differences with respect to the results of SIMS measurements are discussed. Changes in the B distribution and clustering that occur after annealing of the implanted layers are also described.

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