Comparative Cu Diffusion Studies in Advanced Metallizations of Cu and Al-Cu Based Thin Films

1994 ◽  
Vol 337 ◽  
Author(s):  
D. Gupta
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Grain Boundary ◽  
Radioactive Tracer ◽  
Tracer Diffusion ◽  
Performance Measurements ◽  
Self Diffusion ◽  
Cu Metallization ◽  
Diffusion Parameters ◽  
Diffusion Studies

ABSTRACTAvailability of diffusion data is important in the evaluation of the prospect of substituting Cu for Al-Cu metallization for improving electrical and electromigration performance. Measurements have been made of 67Cu radioactive tracer diffusion in Cu, Cu-0.4Zr and several Al-Cu thin films of commonly used compositions. Grain boundary self diffusion in Cu is described by δDb= 1.5xl0-9 exp( — 0.92eV/kT) cm3/ sec. The activation energy for Cu diffusion in Al, Al-l%Cu and Al-0.5Cu-0.15Ti thin films depends on the amount of Cu present and varies in the 0.4 - 1.0 eV range. The measured diffusion parameters in the two alloy systems are compared and contrasted with those available from electromigration studies.

Grain Boundary Diffusion in Co/Cu and Co/Cr Magnetic Thin Films

1993 ◽  
Vol 313 ◽  
Author(s):  
John G. Holl-Pellerin ◽  
S.G.H. Anderson ◽  
P.S. Ho ◽  
K.R. Coffey ◽  
J.K. Howard ◽  
...  
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Diffusion Coefficient ◽  
Grain Boundary ◽  
Photoelectron Spectroscopy ◽  
Boundary Diffusion ◽  
Magnetic Thin Films ◽  
Grain Boundary Diffusion ◽  
X Ray ◽  
Before And After

ABSTRACTX-ray photoelectron spectroscopy (XPS) has been used to investigate grain boundary diffusion of Cu and Cr through 1000 Å thick Co films in the temperature range of 325°C to 400°C. Grain boundary diffusivities were determined by modeling the accumulation of Cu or Cr on Co surfaces as a function of time at fixed annealing temperature. The grain boundary diffusivity of Cu through Co is characterized by a diffusion coefficient, D0gb, of 2 × 104 cm2/sec and an activation energy, Ea,gb, of 2.4 eV. Similarly, Cr grain boundary diffusion through Co thin films occurs with a diffusion coefficient, Do,gb, of 6 × 10-2cm2/sec and an activation energy, Ea,gb of 1.8 eV. The Co film microstructure has been investigated before and after annealing by x-ray diffraction and transmission electron Microscopy. Extensive grain growth and texturing of the film occurred during annealing for Co deposited on a Cu underlayer. In contrast, the microstructure of Co deposited on a Cr underlayer remained relatively unchanged upon annealing. Magnetometer Measurements have shown that increased in-plane coercivity Hc, reduced remanence squareness S, and reduced coercive squareness S* result from grain boundary diffusion of Cu and Cr into the Co films.

SELF-DIFFUSION IN POLYCRYSTALLINE NICKEL

1959 ◽  
Vol 37 (10) ◽  
pp. 1623-1628 ◽  
Author(s):  
J. R. MacEwan ◽  
J. U. MacEwan ◽  
L. Yaffe
Keyword(s):  
Grain Boundary ◽  
Boundary Diffusion ◽  
Volume Diffusion ◽  
Grain Boundary Diffusion ◽  
The Self ◽  
Polycrystalline Nickel ◽  
Self Diffusion ◽  
Diffusion Studies

The self-diffusion of nickel has been studied in polycrystalline samples by a sectioning technique. There is evidence of grain boundary diffusion below temperatures of 1150 °C. The results obtained between 1150° and 1400 °C are representative of volume diffusion and are represented by the expression[Formula: see text]A comparison is made with the results of other self-diffusion studies using Zener's hypothesis.

The Formation of Silicon-Rich Silicides

1989 ◽  
Vol 163 ◽  
Author(s):  
Maria Ronay ◽  
R.G. Schad
Keyword(s):  
Activation Energy ◽  
Transition Metal ◽  
Volume Density ◽  
Metal Films ◽  
The Self ◽  
Formation Temperature ◽  
Silicon Lattice ◽  
Self Diffusion ◽  
Diffusion Studies ◽  
Insight Into

AbstractDiffusion studies of mono and bilaycrs of transition-metal films on silicon showed that the formation of η′ —Cu3Si lowers the formation temperature of subsequently forming ReSi2 by 400°C. This is due to the creation of a large amount of silicon self-interstitials accompanying the formation of the copper suicide, which lowers the activation energy for silicon diffusion. The generalization of this result - stating that the formation of all suicides, in which the volume density of silicon is much larger than in elementary silicon injects silicon self-intcrstitials into the silicon lattice - gives new insight into suicide formation, silicide-cnhanccd dopant diffusion and the self-diffusion of silicon itself6.

Calculation of The Diffusion Parameters in an Ordered Ni3Al-Alloy for A Relaxed Lattice

1998 ◽  
Vol 527 ◽  
Author(s):  
C. Schmidt ◽  
J.L. Bocquet
Keyword(s):  
Activation Energy ◽  
Gradient Algorithm ◽  
Al Alloy ◽  
Self Diffusion ◽  
Barrier Heights ◽  
Diffusion Parameters ◽  
Exponential Factors ◽  
Diffusion Mechanisms ◽  
Body Potential ◽  
Semi Empirical

ABSTRACTUsing atomistic computer simulations, we calculate the diffusion parameters of an Ll2-ordered Ni3Al-alloy. A conjugate gradient algorithm under constant zero pressure and a semi-empirical N-body potential are applied to evaluate potential barrier heights and pre-exponential factors. We focus our investigation on those diffusion mechanisms that have been proposed to account for the experimentally observed but theoretically still disputed fast self-diffusion of Al in Ni3Al: antisite bridge mechanisms and correlated six-jump cycles. Our results demonstrate that the most competitive jumps or jump sequences involve AlNJ-antistructure atoms which are shown to play a key role in the diffusion process by either actively or passively lowering the activation energy of migration.

scholarly journals The Internal Friction of Single Crystals, Bicrystals and Polycrystals of Pure Magnesium

2015 ◽  
Vol 60 (1) ◽  
pp. 371-375 ◽  
Author(s):  
W.B. Jiang ◽  
Q.P. Kong ◽  
L.B. Magalas ◽  
Q.F. Fang
Keyword(s):  
Activation Energy ◽  
Internal Friction ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Single Crystals ◽  
Room Temperature ◽  
Internal Friction Peak ◽  
Self Diffusion ◽  
Boundary Relaxation ◽  
The Difference

Abstract The internal friction of magnesium single crystals, bicrystals and polycrystals has been studied between room temperature and 450°C. There is no internal friction peak in the single crystals, but a prominent relaxation peak appears at around 160°C in polycrystals. The activation energy of the peak is 1.0 eV, which is consistent with the grain boundary self-diffusion energy of Mg. Therefore, the peak in polycrystals can be attributed to grain boundary relaxation. For the three studied bicrystals, the grain boundary peak temperatures and activation energies are higher than that of polycrystals, while the peak heights are much lower. The difference between the internal friction peaks in bicrystals and polycrystals is possibly caused by the difference in the concentrations of segregated impurities in grain boundaries.

Tracer diffusion of Ba and Y in YBa2Cu3Ox

1992 ◽  
Vol 7 (9) ◽  
pp. 2308-2316 ◽  
Author(s):  
Nan Chen ◽  
S.J. Rothman ◽  
J.L. Routbort ◽  
K.C. Goretta
Keyword(s):  
Activation Energy ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Diffusion Coefficients ◽  
Tracer Diffusion ◽  
High Temperature Deformation ◽  
Temperature Deformation ◽  
Self Diffusion ◽  
Speed Up ◽  
Large Anisotropy

Tracer self-diffusion of Ba and Y and the diffusion of Dy, Ho, and Gd, which substitute for Y, have been measured in polycrystalline YBa2Cu3Ox over temperature and oxygen partial pressure ranges of 850 to 980 °C and 103 to 105 Pa, respectively. The diffusion of Ba is slower than that of oxygen or copper, with a high activation energy of about 890 ± 80 kJ/mole. Large anisotropy has also been observed, with diffusion along the c-axis being more than three orders of magnitude slower than diffusion in randomly oriented polycrystals. Diffusion coefficients of Ba were, within experimental uncertainty, independent of oxygen partial pressure over the range measured. The diffusion coefficients of the Y-site species were nearly identical and an activation energy of about 1.0 MJ/mole was estimated, in agreement with that for high-temperature deformation. Attempts to speed up the kinetics through creation of point defects on the Y site by doping proved to be unsuccessful. These results are compared to cation diffusion in cubic perovskites and simple oxides.

Grain boundary self-diffusion in Ni: Effect of boundary inclination

2005 ◽  
Vol 20 (5) ◽  
pp. 1146-1153 ◽  
Author(s):  
Mikhail I. Mendelev ◽  
Hao Zhang ◽  
David J. Srolovitz
Keyword(s):  
Activation Energy ◽  
Diffusion Coefficient ◽  
Grain Boundary ◽  
Boundary Plane ◽  
The Self ◽  
High Symmetry ◽  
Exponential Factor ◽  
Self Diffusion ◽  
Arrhenius Function ◽  
Self Diffusion Coefficient

We examined the influence of the boundary plane on grain-boundary diffusion in Ni through a series of molecular dynamics simulations. A series of 〈010〉 ∑5 tilt boundaries, including several high symmetry and low symmetry boundary planes, were considered. The self-diffusion coefficient is a strong function of boundary inclination at low temperature but is almost independent of inclination at high temperature. At all temperatures, the self-diffusion coefficients are low when at least one of the two grains has a normal with low Miller indices. The grain boundary self-diffusion coefficient is an Arrhenius function of temperature. The logarithm of the pre-exponential factor in the Arrhenius expression was shown to be nearly proportional to the activation energy for diffusion. The activation energy for self-diffusion in a (103) symmetric tilt boundary is much higher than in boundaries with other inclinations. We discuss the origin of the boundary plane density–diffusion coefficient correlation.

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