Epitaxial Relationships of the a-Axis Oriented YBa2Cu3O7-x Thin Films on the PrBa2Cu3O7-xTx Buffered SrTiO3(100) by two Step PLD

1994 ◽  
Vol 341 ◽  
Author(s):  
Gun Yong Sung ◽  
Jeong Dae Suh ◽  
Sahn Nahm
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Volume Fraction ◽  
Buffer Layers ◽  
Laser Deposition ◽  
Superconducting Properties ◽  
Ybco Thin Film ◽  
Axis Orientation ◽  
Ybco Thin Films ◽  
Zero Resistance

AbstractAn a-axis oriented YBa2Cu3O7-x (YBCO) thin film exhibiting zero resistance at 83 K and critical current density of 7.9x103 A/cm2 at 62 K was obtained on an 180 nm - thick PrBa2Cu3 O7-xx(PBCO) buffered SrTiO3(100) substrate by two step pulsed laser deposition (PLD). The volume fraction of a-axis orientation and the crystallinity(Xmin) of the 150 nm-thick YBCO thin films were increased with increasing the thickness of PBCO buffer layer, which was varied friom 0 nm to 180 nm. It is concluded that the thickness of PBCO buffer layer is one of the important parameters to control the structural and superconducting properties of the a-axis oriented YBCO thin films using the PBCO buffer layers.

Improvement in Crystal Orientation and In-plane Alignment of La-doped YBCO Thin Film on BaZrO3-buffered MgO Substrate

2005 ◽  
Vol 20 (6) ◽  
pp. 1529-1535 ◽  
Author(s):  
Ai Kamitani ◽  
S. Adachi ◽  
H. Wakana ◽  
K. Tanabe
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Ybco Thin Film ◽  
High Reproducibility ◽  
Axis Orientation ◽  
Ybco Films ◽  
Ybco Thin Films ◽  
Temperature Gradient Method ◽  
La Doped ◽  
Mgo Substrate

Y0.9Ba1.9La0.2Cu3Oy (La-YBCO) thin films were prepared by an off-axis magnetron sputtering method on MgO substrates with and without a BaZrO3 buffer layer. Insertion of BaZrO3 buffer layer was effective for obtaining La-YBCO films with pure c-axis orientation and in-plane alignment at low temperatures below 600 °C. We prepared La-YBCO thin films on BaZrO3-buffered MgO substrates using a temperature-gradient method, in which a template La-YBCO layer was first deposited at 600 °C, and then the temperature was continuously raised to 700 °C. By this method, La-YBCO thin films with improved crystallinity were successfully prepared. It was also proved that the insertion of the BaZrO3 buffer layer enables us to prepare high-quality La-YBCO films with high reproducibility.

Processing of Y1Ba2Cu3O7-x Superconducting Thin Films on GaAs Substrates with Double Buffer Layers

1991 ◽  
Vol 236 ◽  
Author(s):  
Sang Yeol Lee ◽  
Quanxi Jia ◽  
Wayne A. Anderson ◽  
David T. Shaw
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Film Deposition ◽  
Buffer Layers ◽  
Deposition Condition ◽  
Gaas Substrates ◽  
Ybco Thin Films ◽  
Layer Deposition ◽  
Zero Resistance

AbstractHigh temperature superconducting Y1Ba2Cu3O7-x(YBCO) thin films have been grown on GaAs substrates by in situ laser deposition with a double buffer layer of yttrium-stabilized ZrO2 (YSZ)/Si3N4. A barrier layer using a combination of YSZ/Si3N4 was used to grow high quality YBCO thin films without the degradation of the GaAs during YBCO film deposition. Strongly c-axis oriented superconducting YBCO thin films with a zero resistance temperature of 85.5 K and a critical current density of 1.9x103 A/cm2 at 77 K have been obtained. The electrical properties of the YBCO thin films were mainly dependent on YSZ buffer layer deposition condition.

Processing of Y1Ba2Cu3O7−x Superconducting Thin Films on GaAs Substrates with Double Buffer Layers

1991 ◽  
Vol 235 ◽  
Author(s):  
Sang Yeol Lee ◽  
Quanxi Jia ◽  
Wayne A. Anderson ◽  
David T. Shaw
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Film Deposition ◽  
Buffer Layers ◽  
Deposition Condition ◽  
Gaas Substrates ◽  
Ybco Thin Films ◽  
Layer Deposition ◽  
Zero Resistance

ABSTRACTHigh temperature superconducting Y1Ba2Cu3O7−x(YBCO) thin films have been grown on GaAs substrates by in situ laser deposition with a double buffer layer of yttrium-stabilized ZrO2(YSZ)/Si3N4. A barrier layer using a combination of YSZ/Si3N4 was used to grow high quality YBCO thin films without the degradation of the GaAs during YBCO film deposition. Strongly c-axis oriented superconducting YBCO thin films with a zero resistance temperature of 85.5 K and a critical current density of 1.9×103 A/cm2 at 77 K have been obtained. The electrical properties of the YBCO thin films were mainly dependent on YSZ buffer layer deposition condition.

In-Situ Laser Processing and Microstructural Characteristics of YBa2Cu3O7−δ Thin Films on Si with TiN Buffer Layer

1992 ◽  
Vol 285 ◽  
Author(s):  
P. Tiwari ◽  
T. Zheleva ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transition Temperature ◽  
Buffer Layer ◽  
Processing Parameters ◽  
Superconducting Transition ◽  
Epitaxial Relationship ◽  
Ybco Thin Films ◽  
Zero Resistance

ABSTRACTWe have prepared high-quality superconducting YBa2Cu3O7−δ (YBCO) thin films on Si(100) with TiN as a buffer layer using in-situ multitarget deposition system. Both TiN and YBCO thin films were deposited sequentially by KrF excitner laser ( λ = 248 nm ) at substrate temperature of 650°C. Thin films were characterized using X-ray diffraction (XRD), four-point-probe ac resistivity, scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Rutherford backscattering (RBS). The TiN buffer layer was epitaxial and the epitaxial relationship was found to be cube on cube with <100> TiN // <100> Si. YBCO thin films on Si with TiN buffer layer showed the transition temperature of 90–92K with Tco (zero resistance temperature) of ∼84K. We have found that the quality of the buffer layer is very important in determining the superconducting transition temperature of the thin film. The effects of processing parameters and the correlation of microstructural features with superconducting properties are discussed indetail.

YBa2Cu3O7−x THIN FILMS GROWN ON SAPPHIRE WITH EPITAXIAL YTTRIA-STABILIZED ZrO2 BUFFER LAYER

1993 ◽  
Vol 07 (27) ◽  
pp. 1741-1746
Author(s):  
S.F. XU ◽  
Y.J. TIAN ◽  
H.B. LÜ ◽  
Y.L. ZHOU ◽  
Z.H. CHEN ◽  
...  
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Depth Profile ◽  
Ybco Film ◽  
Ybco Thin Film ◽  
X Ray Diffraction ◽  
X Ray ◽  
Auger Depth Profile ◽  
Zero Resistance ◽  
Influence Of Substrate

We have successfully fabricated high-quality YBa 2 Cu 3 O 7−x (YBCO) thin films grown on sapphire with epitaxial Yttria-Stabilized ZrO 2 (YSZ) buffer layer by pulsed laser deposition. X-ray diffraction and Auger depth profile were used to characterize these thin films. The values of zero-resistance temperature Tco and critical current density J c (at 77 K) of c-axis oriented YBCO thin film with 500 Å-YSZ buffer layer were 91 K and 2.2×106 A/cm 2, respectively. The Auger depth profile showed that no obvious diffusion occurred between the buffer layer and the YBCO film. The influence of substrate temperature and thickness of buffer layer has been investigated.

Texture Studies on Borocarbide Thin Films

2005 ◽  
Vol 495-497 ◽  
pp. 1425-1430 ◽  
Author(s):  
K. Subba Rao ◽  
R. Tamm ◽  
S.C. Wimbush ◽  
G.H. Cao ◽  
C.G. Oertel ◽  
...  
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Pulsed Laser ◽  
The Other ◽  
Laser Deposition ◽  
Epitaxial Thin Films ◽  
Secondary Phases ◽  
Superconducting Properties ◽  
Phase Purity ◽  
Y2o3 Buffer Layer

Epitaxial thin films of the superconducting borocarbide compound YNi2B2C were grown on single crystal MgO (100) substrates without and with Y2O3 buffer layer using pulsed laser deposition (PLD). In both cases YNi2B2C grows with [001] normal to the substrate. However, the in-plane texture depends on the starting condition. For samples without buffer layer, oxygen from the substrate diffuses into the film and forms an Y2O3 reaction layer at the interface. As a consequence, a deficiency of Y is generated giving rise to the formation of secondary phases. On the other hand, using an artificial Y2O3 buffer layer secondary phases are suppressed. The texture of the Y2O3 layers determines the texture of the YNi2B2C film. The superconducting properties of the borocarbide films are discussed with respect to texture and phase purity.

Pulsed laser deposition of YBCO thin films on metal substrates with YSZ buffer layer

1997 ◽  
Vol 19 (8-9) ◽  
pp. 1033-1039 ◽  
Author(s):  
L. Ceresara ◽  
F. Fuso ◽  
E. Arimondo ◽  
P. Scardi
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Buffer Layer ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Metal Substrates ◽  
Ybco Thin Films

Superconducting properties of YBCO thin films grown on [001] quartz substrates by pulsed laser deposition

2019 ◽  
Vol 562 ◽  
pp. 20-24 ◽  
Author(s):  
N.V. Porokhov ◽  
E.E. Levin ◽  
M.L. Chukharkin ◽  
A.S. Kalaboukhov ◽  
A.G. Maresov ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Superconducting Properties ◽  
Ybco Thin Films ◽  
Quartz Substrates

Large Area Pulsed Laser Deposition of YBCO Thin Films and Buffer Layers on 3-Inch Wafers

1994 ◽  
Vol 341 ◽  
Author(s):  
M. Lorenz ◽  
H. Hochmuth ◽  
H. Börner ◽  
D. Natusch ◽  
K. Kreher
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Thickness Distribution ◽  
Buffer Layers ◽  
Large Area ◽  
Promising Technique ◽  
Laser Plume ◽  
Ybco Thin Films ◽  
Epitaxial Oxide

AbstractAn arrangement for large area PLD on 3-inch wafers is proposed. In order to get a homogeneous stoichiometry and thickness distribution and small variations of superconducting properties on the 3-inch diameter, the substrate is foreseen to be rotated and additionally laterally moved up to 45 mm during deposition whereas the laser plume remains fixed.YSZ buffer layers showed thickness homogeneity of 1% within 10 mm, of 4% within 2 inch and of 8% within 3 inch diameter, respectively. For in-situ deposited YBCO thin films on r-plane sapphire with YSZ buffer layer we inductively measured within 3 inch diameter values of the critical temperature Tc(90%) from 85.9 K to 86.7 K and values of the critical current density jc(77 K) from 1 × 106 to 2 × 106 A/cm2. However, up to now the degree of epitaxy of the YBCO thin films on r-plane sapphire with YSZ buffer layer is lower compared to YBCO on MgO(100) as determined by Raman spectroscopy. Nevertheless, large area PLD seems to be a very promising technique for homogeneous coating of 3-inch wafers by epitaxial oxide thin films.

scholarly journals Advances in sustainable fluorine-free CSD YBa2Cu3O7 thin films

2013 ◽  
Vol 1579 ◽  
Author(s):  
Pieter Vermeir ◽  
Jonas Feys ◽  
Glenn Pollefeyt ◽  
Bram Verslyppe ◽  
Asha De Brabandere ◽  
...  
Keyword(s):  
Thin Films ◽  
Reaction Mechanism ◽  
Free Water ◽  
Crystallization Rate ◽  
Coated Conductors ◽  
Superconducting Properties ◽  
Major Drawback ◽  
Axis Orientation ◽  
Ybco Films ◽  
Ybco Thin Films

ABSTRACTChemical solution deposition techniques are a very competitive low cost method to achieve coated conductors. Recently, fluorine-free CSD methods have made a great progress for the preparation of YBCO thin films and became a sustainable alternative for the well-known trifluoroacetate CSD approach. By elucidating the reaction mechanism behind this new approach, finally giving an answer to the question why it is possible to fabricate YBCO films without TFA, different processing routes were discovered giving rise to high superconducting YBCO films (>1MA.cm-2). Each route has it's own benefits. One specific route offers the opportunity to tune the crystallographic orientation. By changing one process parameter, a shift from complete c-axis to complete a-axis orientation is observed. This can be very useful for e.g. Josephson Junctions.We particularly investigated the fundamental reaction mechanism of each reaction route, with the focus on the corresponding barium compound. Although good superconducting properties are obtained, still one major drawback limits industrial implementation: thickness. It is observed that a critical thickness of ∼500 nm eliminates the superconducting properties. Therefore, this paper gives a summary of all progress made regarding to fluorine-free water-based CSD YBCO thin films with emphasis on the possibility to control the crystallization rate.

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