BaTiO3 Thin Films Prepared By Dip-Coating Process

1994 ◽  
Vol 341 ◽  
Author(s):  
Nelcy Della ◽  
Santina Mohallem
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Dip Coating ◽  
Molar Ratio ◽  
X Ray Diffraction ◽  
Titanium Alkoxides ◽  
X Ray ◽  
Withdrawal Speed ◽  
Sol Gel Process ◽  
Tetragonal Batio

AbstractThin films of pure barium titanate have been prepared by the sol-gel process from organomettalic sols containing titanium alkoxides and barium acetate (molar ratio [Ba]/[Ti]=l). It leads to transparent, homogeneous and adherent coatings. The influence of various parameters such as chemical concentration, viscosity, withdrawal speed and temperature of densification on film thickness is described. The films were characterized by X-ray diffraction during their heat treatment. Their crystallization temperature was observed to be around 450°C. No variations in the optical properties were observed during the crystallization, and it occurred without the appearance of cracks or pinholes. Tetragonal BaTiO3 structure was observed, and the ferroeletric properties were investigated as functions of thickness and grain size.

Sol-Gel Processed BaTiO3

1988 ◽  
Vol 121 ◽  
Author(s):  
Nelcy Della ◽  
Santina Mohallem ◽  
Michel André Aegerter
Keyword(s):  
Heat Treatment ◽  
Glacial Acetic Acid ◽  
Sol Gel ◽  
Dip Coating ◽  
Barium Acetate ◽  
X Ray Diffraction ◽  
X Ray ◽  
Withdrawal Speed ◽  
Dip Coating Technique ◽  
Tetragonal Batio

ABSTRACTBaTiO. thin films deposited on pyrex supportsby dip-coating technique and powders have been prepared by the sol-gel route from sols containing a mixture of tetraisopropyl orthotitanate, iso propanol, barium acetate and glacial acetic acid. The thickness of the films is proportional to the first power of the withdrawal speed. Gelled sols have been dried hypercritically and by natural evaporation. Films and powders have been characterized by X-ray diffraction during their heat treatment. Tetragonal BaTiO structure is observed for T ≥ 600°C.

Effect of the La3+-Doping Concentration on the Properties of TiO2 Thin Films by Sol-Gel Process

2014 ◽  
Vol 1082 ◽  
pp. 451-454
Author(s):  
Tao Bai ◽  
Shi Gen Zhu
Keyword(s):  
Thin Films ◽  
Doping Concentration ◽  
Sol Gel ◽  
Dip Coating ◽  
Significant Weight Loss ◽  
Titanium Tetraisopropoxide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sol Gel Process ◽  
Rare Earth La

Various rare earth (La3+) doped titaniumdioxide(TiO2) thin films (La3+-doped TiO2) have been successfully prepared on a glass substrate by a sol–gel dip coating route using titanium tetraisopropoxide and lanthanum chloride as the initial materials. After the La3+-doped TiO2 thin films were calcined at 500°C for 1h, the effect of La3+-doping on the properties of films were investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM) and thermogravimetric- differential scanning calorimeter techniques (TG/DTG). The XRD results showed that all La3+-doped TiO2 thin films contained only a single crystalline phase of anatase TiO2 after calcining at 500°C for 1h. Moreover, the XRD results also revealed that the crystallinity and crystalline size decreased with increased La3+-doping. SEM micrographs showed that all La3+- doped TiO2 thin films have smooth surfaces containing granular nanocrystallines and are without cracks. TG/DTG measurement showed that there was a significant weight loss of the TiO2 precursor calcined in the temperature range from ambient to 660 °C, which was due to the volatilizing of water and organic and the phase transformation.

Sol-Gel derived Bi4-xNdxTi3O12 Thin Films and Their Characterization

2002 ◽  
Vol 737 ◽  
Author(s):  
R.E. Melgarejo ◽  
M.S. Tomar ◽  
A. Hidalgo ◽  
R.S. Katiyar
Keyword(s):  
Thin Films ◽  
Spin Coating ◽  
Bismuth Titanate ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Complete Solid Solution ◽  
Sol Gel Process ◽  
Ferroelectric Memory ◽  
Initial Results

ABSTRACTNd substituted bismuth titanate Bi4-xNdxTi3O12 were synthesized by sol-gel process and thin films were deposited on Pt substrate (Pt/TiO2/SiO2/Si) by spin coating. Thin films, characterized by X-ray diffraction and Raman spectroscopy, shows complete solid solution up to the composition x < 1. Initial results indicate that the ferroelectric polarization increases with increasing Nd content in the film with 2Pr = 50μC/cm2 for x = 0.46, which may have application in non-volatile ferroelectric memory devices.

Synthesis and Characterizations of Strontium Substituted Hydroxyapatite Thin Films

2010 ◽  
Vol 93-94 ◽  
pp. 231-234
Author(s):  
B. Hongthong ◽  
Satreerat K. Hodak ◽  
Sukkaneste Tungasmita
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Composition ◽  
Spin Coating ◽  
Phase Structure ◽  
Sol Gel ◽  
Cross Linking ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sol Gel Process

Strontium substituted hydroxyapatite(SrHAp) were fabricated both in the form of powder as reference and thin film by using inorganic precursor reaction. The sol-gel process has been used for the deposition of SrHAp layer on stainless steal 316L substrate by spin coating technique, after that the films were annealed in air at various temperatures. The chemical composition of SrHAp is represented (SrxCa1-x)5(PO4)3OH, where x is equal to 0, 0.5 and 1.0. Investigations of the phase structure of SrHAp were carried out by using X-ray diffraction technique (XRD). The results showed that strontium is incorporated into hydroxyapatite where its substitution for calcium increases in the lattice parameters, and Sr3(PO4)2 can be detected at 900°C. The SEM micrographs showed that SrHAp films exhibited porous structure before develop to a cross-linking structure.

Sol-gel synthesis and characterization of Ag nanoparticles in ZrO2 thin films

2009 ◽  
Vol 24 (8) ◽  
pp. 2541-2546 ◽  
Author(s):  
Eisuke Yokoyama ◽  
Hironobu Sakata ◽  
Moriaki Wakaki
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Composite Films ◽  
Dip Coating ◽  
Molar Ratio ◽  
X Ray Diffraction ◽  
Silver Surface ◽  
Molar Ratios ◽  
Sol Gel Synthesis

ZrO2 thin films containing silver nanoparticles were prepared using the sol-gel method with Ag to Zr molar ratios [Ag]/[Zr] = 0.11, 0.25, 0.43, 0.67, 1.00, 1.50, and 2.33. After dip coating on glass substrate, coated films were annealed at 200 and 300 °C in air. X-ray diffraction peaks corresponding to crystalline Ag were observed, but a specific peak corresponding to ZrO2 was not observed. At the molar ratio [Ag]/[Zr] = 0.25, the particle size of Ag distributed broadly centered at 17 nm for an annealing temperature of 200 °C and at 25 nm for 300 °C. The films annealed in air at 200 °C showed an absorption band centered at 450 nm because of the silver surface plasmon resonance, whereas films heated at 300 °C in air caused a red shift of the absorption to 500 nm. The absorption peak was analyzed using the effective dielectric function of Ag-ZrO2 composite films modeled with the Maxwell-Garnett expression.

Resistive Switching Behaviour of Dip Coated ZnO Films with the Changing with Drawal Speed

2020 ◽  
Vol 978 ◽  
pp. 384-389
Author(s):  
Sritama Roy ◽  
Saswati Soumya Dash ◽  
Prasanna Kumar Sahu ◽  
Smita Mishra ◽  
Jyoti Prakash Kar
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Sol Gel ◽  
Dip Coating ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Thin Film Thickness ◽  
Withdrawal Speed ◽  
Current Voltage ◽  
P Type

Zinc Oxide (ZnO) thin films were produced by the sol gel dip coating process on the p-type silicon substrate with various withdrawal speeds changing from 1 to 4 cm/min, respectively. The films were annealed at a temperature of 500 °C for an hour in air ambient. The thin film thickness was found to be raised with the rise in withdrawal speed. The uniform distribution of the grains was appeared for all the films. The evolution of c-axis oriented (002) peak was revealed from X-ray diffraction (XRD) studies. The microstructural and optical properties of ZnO films were investigated by Raman, FTIR and photoluminescence spectroscopy (PL). The resistive switching properties of ZnO based memristors were studied by performing the current-voltage (I-V) measurements, where the thin films coated with lower withdrawal speed, have shown better switching property with rapid rise and fall of current during SET and RESET process, respectively.

X-ray diffraction analysis for thin films of PbTiO3-La2/3TiO3 prepared by the sol-gel method

1994 ◽  
Vol 9 (8) ◽  
pp. 2133-2137 ◽  
Author(s):  
Hideki Yoshioka
Keyword(s):  
Thin Films ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Diffraction Method ◽  
Dip Coating ◽  
X Ray Diffraction ◽  
X Ray ◽  
Coating Methods ◽  
Diffraction Patterns ◽  
System 1

Thin films in the system (1 - x) PbTiO3−xLa2/3TiO3 were prepared by the sol-gel and dip-coating methods. Phases deposited in the films and the lattice parameters as a function of the composition were investigated by the x-ray diffraction method. The solid solutions with a perovskite structure were formed as a single phase with x up to 0.9. For the composition of x = 1.0, metastable La-Ti-O perovskite phase with a small amount of the impurity phase, La2Ti2O7, was obtained. Simulation of x-ray diffraction patterns based on the defect structure model shows that the structure of the La-Ti-O perovskite phase includes randomly distributed cation vacancies at the A-site, namely (La2/3□1/3)TiO3.

Preparation of Titanium Oxide and Metal Titanates as Powders, Thin Films, and Microspheres by Novel Inorganic Sol-Gel Process

2005 ◽  
Vol 900 ◽  
Author(s):  
A. Deptuła ◽  
Kenneth C Goretta ◽  
Tadeusz Olczak ◽  
Wieslawa Lada ◽  
Andrzej G. Chmielewski ◽  
...  
Keyword(s):  
Thin Films ◽  
Ascorbic Acid ◽  
Nitric Acid ◽  
Titanium Oxide ◽  
Sol Gel ◽  
Solid State Reactions ◽  
X Ray Diffraction ◽  
Metal Hydroxides ◽  
X Ray ◽  
Sol Gel Process

ABSTRACTTitanium oxide and titanates based on Ba, Sr and Ca were prepared from commercial solutions of TiCl4 and HNO3. The main preparation steps for the sols consisted of elimination of chloride anions by distillation with nitric acid and addition of metal hydroxides for the titanates. Resulting sols were gelled and used to (1) prepare irregularly shaped powders by evaporation; (2) produce by a dipping technique thin films on glass, Ag, or Ti substrates; and (3) produce spherical powders (diameters <100 μm) by solvent extraction. Results of thermal and X-ray-diffraction analyses indicated that the temperatures required to form the various compounds were lower than those necessary to form the compounds by conventional solid-state reactions and comparable to those required with use of organometallic based sol-gel methods. Temperatures of formation could be further reduced by addition of ascorbic acid to the sols.

Preparation of PZT Ferroelectric Thin Films by Sol-Gel Process

2012 ◽  
Vol 204-208 ◽  
pp. 4207-4210 ◽  
Author(s):  
Yu Fei You ◽  
C. H. Xu ◽  
Jun Peng Wang ◽  
Yu Liang Liu ◽  
Jin Feng Xiao ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Pzt Ceramics ◽  
X Ray ◽  
Pzt Film ◽  
Sol Gel Process ◽  
Pzt Films ◽  
Pzt Ferroelectric Thin Films ◽  
Electronic Microscope

Sol-gel method is used for the formation of Pb(Zr0.63Ti0.37)O3(PZT) thin films. The initial films were formed with spin coating sol solution on silicon wafer and drying coated wet sol film at 300°C for 5min. This process was repeated for 1-4 times to obtain 4 initial films with different thicknesses. 4 initial films were annealed at 500°C for 2h to obtain PZT ceramics films. The morphologies of the surface and cross-section of PZT films were observed with a scanning electronic microscope (SEM). The phase structures of PZT films were analyzed using an X-ray diffraction meter (XRD). Experimental results show that PZT film prepared by coating wet sol on silicon once can be high smooth and compact film.

Sol-gel derived Ba(Mg1/3Ta2/3)O3 thin films: Preparation and structure

1997 ◽  
Vol 12 (3) ◽  
pp. 596-599 ◽  
Author(s):  
Ji Zhou ◽  
Qing-Xin Su ◽  
K. M. Moulding ◽  
D. J. Barber
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Volume Fraction ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Sol Gel Process ◽  
Small Grains

Ba(Mg1/3Ta2/3)O3 thin films were prepared by a sol-gel process involving the reaction of barium isopropoxide, tantalum ethoxide, and magnesium acetate in 2-methoxyethanol and subsequently hydrolysis, spin-coating, and heat treatment. Transmission electron microscopy, x-ray diffraction, and Raman spectroscopy were used for the characterization of the thin films. It was shown that the thin films tend to crystallize with small grains sized below 100 nm. Crystalline phase with cubic (disordered) perovskite structure was formed in the samples annealed at a very low temperature (below 500 °C), and well-crystallized thin films were obtained at 700 °C. Although disordered perovskite is dominant in the thin films annealed below 1000 °C, a low volume fraction of 1 : 2 ordering domains was found in the samples and grows with an increase of annealing temperature.

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