Synthesis and Characterizations of Strontium Substituted Hydroxyapatite Thin Films

2010 ◽  
Vol 93-94 ◽  
pp. 231-234
Author(s):  
B. Hongthong ◽  
Satreerat K. Hodak ◽  
Sukkaneste Tungasmita
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Composition ◽  
Spin Coating ◽  
Phase Structure ◽  
Sol Gel ◽  
Cross Linking ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sol Gel Process

Strontium substituted hydroxyapatite(SrHAp) were fabricated both in the form of powder as reference and thin film by using inorganic precursor reaction. The sol-gel process has been used for the deposition of SrHAp layer on stainless steal 316L substrate by spin coating technique, after that the films were annealed in air at various temperatures. The chemical composition of SrHAp is represented (SrxCa1-x)5(PO4)3OH, where x is equal to 0, 0.5 and 1.0. Investigations of the phase structure of SrHAp were carried out by using X-ray diffraction technique (XRD). The results showed that strontium is incorporated into hydroxyapatite where its substitution for calcium increases in the lattice parameters, and Sr3(PO4)2 can be detected at 900°C. The SEM micrographs showed that SrHAp films exhibited porous structure before develop to a cross-linking structure.

Sol-Gel derived Bi4-xNdxTi3O12 Thin Films and Their Characterization

2002 ◽  
Vol 737 ◽  
Author(s):  
R.E. Melgarejo ◽  
M.S. Tomar ◽  
A. Hidalgo ◽  
R.S. Katiyar
Keyword(s):  
Thin Films ◽  
Spin Coating ◽  
Bismuth Titanate ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Complete Solid Solution ◽  
Sol Gel Process ◽  
Ferroelectric Memory ◽  
Initial Results

ABSTRACTNd substituted bismuth titanate Bi4-xNdxTi3O12 were synthesized by sol-gel process and thin films were deposited on Pt substrate (Pt/TiO2/SiO2/Si) by spin coating. Thin films, characterized by X-ray diffraction and Raman spectroscopy, shows complete solid solution up to the composition x < 1. Initial results indicate that the ferroelectric polarization increases with increasing Nd content in the film with 2Pr = 50μC/cm2 for x = 0.46, which may have application in non-volatile ferroelectric memory devices.

Preparation of PST Ferroelectric Thin Films by Sol-Gel Process

2013 ◽  
Vol 734-737 ◽  
pp. 2328-2331
Author(s):  
Yu Fei You ◽  
C.H. Xu ◽  
Jing Zhe Wang ◽  
Jun Peng Wang
Keyword(s):  
Thin Films ◽  
Cross Section ◽  
Spin Coating ◽  
Room Temperature ◽  
Sol Gel ◽  
Ferroelectric Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sol Gel Process ◽  
Electronic Microscope

Sol-gel method is used for the formation of Pb0.499Sr0.499TiO3 (PST)thin films. The initial films were prepared with spin coating sol solution on silicon wafer and drying at room temperature and then heating coated dry sol film at 400°C for 10min. This process was repeated for 1-4 times to obtain 4 initial films with different thicknesses. The 4 initial films were annealed at 700°C for 2h to obtain PST ceramics films. The morphologies of the surface and cross-section of PST films were observed with a scanning electronic microscope (SEM). The phase structures of PST films were analyzed using X-ray diffraction meter (XRD). Experimental results show that PST film prepared by coating sol on silicon with different thicknesses can be high smooth,uniform and compact film.

Preparation of Titanium Oxide and Metal Titanates as Powders, Thin Films, and Microspheres by Novel Inorganic Sol-Gel Process

2005 ◽  
Vol 900 ◽  
Author(s):  
A. Deptuła ◽  
Kenneth C Goretta ◽  
Tadeusz Olczak ◽  
Wieslawa Lada ◽  
Andrzej G. Chmielewski ◽  
...  
Keyword(s):  
Thin Films ◽  
Ascorbic Acid ◽  
Nitric Acid ◽  
Titanium Oxide ◽  
Sol Gel ◽  
Solid State Reactions ◽  
X Ray Diffraction ◽  
Metal Hydroxides ◽  
X Ray ◽  
Sol Gel Process

ABSTRACTTitanium oxide and titanates based on Ba, Sr and Ca were prepared from commercial solutions of TiCl4 and HNO3. The main preparation steps for the sols consisted of elimination of chloride anions by distillation with nitric acid and addition of metal hydroxides for the titanates. Resulting sols were gelled and used to (1) prepare irregularly shaped powders by evaporation; (2) produce by a dipping technique thin films on glass, Ag, or Ti substrates; and (3) produce spherical powders (diameters <100 μm) by solvent extraction. Results of thermal and X-ray-diffraction analyses indicated that the temperatures required to form the various compounds were lower than those necessary to form the compounds by conventional solid-state reactions and comparable to those required with use of organometallic based sol-gel methods. Temperatures of formation could be further reduced by addition of ascorbic acid to the sols.

Preparation of PZT Ferroelectric Thin Films by Sol-Gel Process

2012 ◽  
Vol 204-208 ◽  
pp. 4207-4210 ◽  
Author(s):  
Yu Fei You ◽  
C. H. Xu ◽  
Jun Peng Wang ◽  
Yu Liang Liu ◽  
Jin Feng Xiao ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Pzt Ceramics ◽  
X Ray ◽  
Pzt Film ◽  
Sol Gel Process ◽  
Pzt Films ◽  
Pzt Ferroelectric Thin Films ◽  
Electronic Microscope

Sol-gel method is used for the formation of Pb(Zr0.63Ti0.37)O3(PZT) thin films. The initial films were formed with spin coating sol solution on silicon wafer and drying coated wet sol film at 300°C for 5min. This process was repeated for 1-4 times to obtain 4 initial films with different thicknesses. 4 initial films were annealed at 500°C for 2h to obtain PZT ceramics films. The morphologies of the surface and cross-section of PZT films were observed with a scanning electronic microscope (SEM). The phase structures of PZT films were analyzed using an X-ray diffraction meter (XRD). Experimental results show that PZT film prepared by coating wet sol on silicon once can be high smooth and compact film.

Sol-gel derived Ba(Mg1/3Ta2/3)O3 thin films: Preparation and structure

1997 ◽  
Vol 12 (3) ◽  
pp. 596-599 ◽  
Author(s):  
Ji Zhou ◽  
Qing-Xin Su ◽  
K. M. Moulding ◽  
D. J. Barber
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Volume Fraction ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Sol Gel Process ◽  
Small Grains

Ba(Mg1/3Ta2/3)O3 thin films were prepared by a sol-gel process involving the reaction of barium isopropoxide, tantalum ethoxide, and magnesium acetate in 2-methoxyethanol and subsequently hydrolysis, spin-coating, and heat treatment. Transmission electron microscopy, x-ray diffraction, and Raman spectroscopy were used for the characterization of the thin films. It was shown that the thin films tend to crystallize with small grains sized below 100 nm. Crystalline phase with cubic (disordered) perovskite structure was formed in the samples annealed at a very low temperature (below 500 °C), and well-crystallized thin films were obtained at 700 °C. Although disordered perovskite is dominant in the thin films annealed below 1000 °C, a low volume fraction of 1 : 2 ordering domains was found in the samples and grows with an increase of annealing temperature.

Structural, Magnetic, and Electrical Properties of BiFe1-xMnxO3 Thin Films

2009 ◽  
Vol 1199 ◽  
Author(s):  
Danilo G Barrionuevo ◽  
Surinder P Singh ◽  
Maharaj S. Tomar
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Magnetic Measurements ◽  
Sol Gel ◽  
Ion Concentration ◽  
Ferromagnetic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Sol Gel Process

AbstractWe synthesized BiFe1-xMnxO3 (BFMO) for various compositions by sol gel process and thin films were deposited by spin coating on platinum Pt/Ti/SiO2/Si substrates. X-ray diffraction shows all the diffraction planes corresponding to rhombohedrally distorted perovskite BiFeO3 structure. The absence of any impurity phase in the films suggests the incorporation Mn ion preferentially to Fe site in the structure for low concentration. Magnetic measurements reveal the formation of ferromagnetic phase at room temperature with increased Mn substitution. On the other hand, ferroelectric polarization decreases with increasing Mn ion concentration. Raman studies suggest the dopant induced structural distortion.

scholarly journals Synthesis & characterization of nanostructure VO2 thin film

2021 ◽  
Vol 2070 (1) ◽  
pp. 012098
Author(s):  
P K Ojha ◽  
S K Mishra
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Vanadium Dioxide ◽  
Sol Gel ◽  
Cost Effective ◽  
Metallic Phase ◽  
Strongly Correlated ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sol Gel Process

Abstract Vanadium dioxides are strongly correlated systems which undergo an insulator-metal transition (IMT) from a low-temperature semiconducting phase to a high-temperature metallic phase. Among them, Vanadium dioxide (VO2) undergoes IMT close to room temperature, accompanied by a structural transition resulting change of several orders of magnitude in the electrical and optical properties. Here, we present the synthesis of VO2 by sol-gel process which employs cost-effective precursors to synthesize pure phase of VO2 thin films. The synthesized thin films were characterized using an X-ray diffraction (XRD) to confirm phase purity and high resolution scanning electron microscope (HR-SEM) to study the crystallite and particle size for the synthesized films. The film’s surface was analyzed by X-ray photoelectron spectroscopy (XPS) to determine the valence state and chemical composition of vanadium dioxide.

Ferroelectric, Dielectric and Pyroelectric Properties of Highly C-Axis -Oriented Nanostructured (Pb,Sr)(Zr,Ti)O3 Thin Films

2011 ◽  
Vol 287-290 ◽  
pp. 2381-2386
Author(s):  
Tie Dong Cheng ◽  
Xin Gui Tang ◽  
Shu Juan Kuang ◽  
Nan Ding ◽  
Yan Ping Jiang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Process ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Phase Transition Behavior ◽  
Strontium Zirconate ◽  
X Ray ◽  
Surface Image ◽  
Nano Size

Lead strontium zirconate titanate (Pb0.92Sr0.08)(Zr0.65Ti0.35)O3 (PSZT) thin films were grown on Pt (111)/Ti/SiO2/Si(100) substrates using a simple sol-gel method. X-ray diffraction studies confirmed that all the PSZT films undergone various thermal process show highly preferred (001)-orientation. On the surface image of the thin film, many clusters are found, which are composed by grains in size of 0.5-0.8 mm. Between the clusters, the nano-size grain is about 50-80 nm. The root mean square (RMS) roughness of the film surfaces is 5.1 nm. PSZT thin film exhibit excellent ferroelectric behavior, demonstrated by reproducible hystersis loops with high remnant polarization (Pr =49 μC cm-2) and relative low coercive field (Ec=53.5 kV cm-1). The pyroelectric coefficients (p) were measured, at 26 °C, the p=215 mC m-2 K-1 for PSZT films. The dielectric properties as well as phase transition behavior were characterized and a ferroelectric to paraelectric transition were found in the vicinity of 196 °C.

Synthesis and characterization of Ca1-X SrxCu3Ti4O12 thin films for dielectric applications

2003 ◽  
Vol 785 ◽  
Author(s):  
R. Guzman ◽  
M.S. Tomar ◽  
R.E. Melgarejo
Keyword(s):  
Thin Films ◽  
Spin Coating ◽  
Dielectric Response ◽  
Sol Gel ◽  
Chemical Solution ◽  
X Ray Diffraction ◽  
X Ray ◽  
Solution Route ◽  
Chemical Solution Route

ABSTRACTThere is a great deal of interest in CaCu3Ti4O12 system for dielectric applications. We have studied Ca1-xSrxCu3Ti4O12 system for different compositions. The material is synthesized by sol-gel chemical solution route and thin films were deposited by spin coating. Thin films were investigated by x-ray diffraction and Raman spectroscopy for structural properties. These results indicate a solid solution for the compositions x = 0.00 to 0.80. The SEM micrographs shows the uniform films at 800° C, but the dielectric response of Ca1-xSrxCu3Ti4O12 (x = 0.00) shows the dielectric constant value below 200.

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