Resistive Switching Behaviour of Dip Coated ZnO Films with the Changing with Drawal Speed

2020 ◽  
Vol 978 ◽  
pp. 384-389
Author(s):  
Sritama Roy ◽  
Saswati Soumya Dash ◽  
Prasanna Kumar Sahu ◽  
Smita Mishra ◽  
Jyoti Prakash Kar
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Sol Gel ◽  
Dip Coating ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Thin Film Thickness ◽  
Withdrawal Speed ◽  
Current Voltage ◽  
P Type

Zinc Oxide (ZnO) thin films were produced by the sol gel dip coating process on the p-type silicon substrate with various withdrawal speeds changing from 1 to 4 cm/min, respectively. The films were annealed at a temperature of 500 °C for an hour in air ambient. The thin film thickness was found to be raised with the rise in withdrawal speed. The uniform distribution of the grains was appeared for all the films. The evolution of c-axis oriented (002) peak was revealed from X-ray diffraction (XRD) studies. The microstructural and optical properties of ZnO films were investigated by Raman, FTIR and photoluminescence spectroscopy (PL). The resistive switching properties of ZnO based memristors were studied by performing the current-voltage (I-V) measurements, where the thin films coated with lower withdrawal speed, have shown better switching property with rapid rise and fall of current during SET and RESET process, respectively.

BaTiO3 Thin Films Prepared By Dip-Coating Process

1994 ◽  
Vol 341 ◽  
Author(s):  
Nelcy Della ◽  
Santina Mohallem
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Dip Coating ◽  
Molar Ratio ◽  
X Ray Diffraction ◽  
Titanium Alkoxides ◽  
X Ray ◽  
Withdrawal Speed ◽  
Sol Gel Process ◽  
Tetragonal Batio

AbstractThin films of pure barium titanate have been prepared by the sol-gel process from organomettalic sols containing titanium alkoxides and barium acetate (molar ratio [Ba]/[Ti]=l). It leads to transparent, homogeneous and adherent coatings. The influence of various parameters such as chemical concentration, viscosity, withdrawal speed and temperature of densification on film thickness is described. The films were characterized by X-ray diffraction during their heat treatment. Their crystallization temperature was observed to be around 450°C. No variations in the optical properties were observed during the crystallization, and it occurred without the appearance of cracks or pinholes. Tetragonal BaTiO3 structure was observed, and the ferroeletric properties were investigated as functions of thickness and grain size.

Structure and Optical Properties of TiO2 Thin Films Prepared by a Sol-Gel Processing

2019 ◽  
Vol 74 (7) ◽  
pp. 635-642
Author(s):  
Zohra N. Kayani ◽  
Mehawish Saleem ◽  
Saira Riaz ◽  
Shahzad Naseem ◽  
Farhat Saleemi
Keyword(s):  
Thin Films ◽  
Near Infrared ◽  
Sol Gel ◽  
Dip Coating ◽  
Photovoltaic Devices ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
Withdrawal Speed ◽  
Gel Processing

AbstractTitanium dioxide (TiO2) thin films were deposited on CR-39 by a sol-gel dip coating route with different withdrawal speeds ranging from 250 to 350 mm/s. The TiO2 thin films were characterised by x-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy, ellipsometry, and ultraviolet (UV)-visible (VIS)-near infrared (NIR) spectro-photometry. The role of withdrawal speed on the thickness of thin films to tailor properties of TiO2 thin films was studied. The XRD results revealed that all the films are amorphous in nature. TiO2 thin films deposited at different withdrawal speeds exhibit a decrease in transmission with an increase in speed. The direct optical band gap of the films has been estimated to be in the range 3.48–3.00 eV by UV-VIS-NIR spectro-photometry and 3.52–3.38 eV by ellipsometry. TiO2 is a potential prospect in microelectronic applications and can serve as an absorber layer for photovoltaic devices. Surface morphology is granular with an increase in grain size and an increase in withdrawal speed.

The effect of the withdrawal speed on properties of nickel oxide thin films

2019 ◽  
Vol 234 (10) ◽  
pp. 647-655
Author(s):  
Zohra Nazir Kayani ◽  
Atiqa Aslam ◽  
Rabia Ishaque ◽  
Syeda Nosheen Zahra ◽  
Hifza Hanif ◽  
...  
Keyword(s):  
Thin Films ◽  
Nickel Oxide ◽  
Band Gap ◽  
Sol Gel ◽  
Average Crystallite Size ◽  
Dip Coating ◽  
Oxide Thin Films ◽  
Withdrawal Speed ◽  
Sem Micrograph ◽  
Nickel Oxide Thin Films

Abstract Nickel oxide thin films have been prepared by sol-gel dip-coating technique on glass substrate. It is shown that nickel oxide thin films have poly crystalline nature. Nickel oxide thin films exhibit high transmission (39–85%) in the wavelength range of 400–900 nm, strong absorption between 300 and 400 nm wavelengths and decrease of band gap values are in the range 3.69–3.27 eV with increase of withdrawal speed. High band gap at low withdrawal speed is because of the small average crystallite size, which decreases with increase in withdrawal speed. The SEM micrograph shows cubic crystallites and surface of thin films become dense, smooth and homogeneous with an increase in withdrawal speed. Assessment of nickel oxide deposition conditions provides gateway for effective and cheap solar cells.

ELECTRICAL AND OPTICAL PROPERTIES OF MULTILAYER SOL GEL ZnO COATINGS

2006 ◽  
Vol 20 (23) ◽  
pp. 3357-3364 ◽  
Author(s):  
TALAAT MOUSSA HAMMAD
Keyword(s):  
Carrier Mobility ◽  
Sol Gel ◽  
Dip Coating ◽  
Free Carrier ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Electrical And Optical Properties ◽  
Zinc Oxide Films ◽  
Free Carrier Density ◽  
Fine Microstructure

Multilayer transparent conducting zinc oxide films have been prepared on boro-silicate substrates by the commercially sol gel dip coating process. Each layer was fired at 550°C in a conventional furnace for 15 min. The final coatings were then tempered under a flux of forming gas ( N 2/ H 2) at 400°C for 2 h. The coatings were characterized by surface stylus profiling and optical spectroscopy (UV-NIR). Results show that (1) ZnO films with electrical resistivity of 6×10-4 Ω· cm , free carrier mobility of approximately 77 cm 2/ V · s and free carrier density of approximately 6.14×1019 cm -3 are obtained for multilayers 310 nm and (2) the transmittance is approximately 60.4% and the reflectance is nearly 34.7% are obtained at a wavelength of 800 nm when the thickness of the ZnO multilayers is 310 nm. The crystal structure and grain orientation of ZnO films were determined by X-ray diffraction. SEM investigations revealed that the surface morphology of growing ZnO films on boro-silicate substrate is dominated by the smooth surface with a fine microstructure.

Sol-gel synthesis and characterization of Ag nanoparticles in ZrO2 thin films

2009 ◽  
Vol 24 (8) ◽  
pp. 2541-2546 ◽  
Author(s):  
Eisuke Yokoyama ◽  
Hironobu Sakata ◽  
Moriaki Wakaki
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Composite Films ◽  
Dip Coating ◽  
Molar Ratio ◽  
X Ray Diffraction ◽  
Silver Surface ◽  
Molar Ratios ◽  
Sol Gel Synthesis

ZrO2 thin films containing silver nanoparticles were prepared using the sol-gel method with Ag to Zr molar ratios [Ag]/[Zr] = 0.11, 0.25, 0.43, 0.67, 1.00, 1.50, and 2.33. After dip coating on glass substrate, coated films were annealed at 200 and 300 °C in air. X-ray diffraction peaks corresponding to crystalline Ag were observed, but a specific peak corresponding to ZrO2 was not observed. At the molar ratio [Ag]/[Zr] = 0.25, the particle size of Ag distributed broadly centered at 17 nm for an annealing temperature of 200 °C and at 25 nm for 300 °C. The films annealed in air at 200 °C showed an absorption band centered at 450 nm because of the silver surface plasmon resonance, whereas films heated at 300 °C in air caused a red shift of the absorption to 500 nm. The absorption peak was analyzed using the effective dielectric function of Ag-ZrO2 composite films modeled with the Maxwell-Garnett expression.

Optically Transparent of N-ZnO/p-NiO Heterojunction for Ultraviolet Photodetector Application

2011 ◽  
Vol 687 ◽  
pp. 711-715 ◽  
Author(s):  
Shu Yi Tsai ◽  
Min Hsiung Hon ◽  
Yang Ming Lu
Keyword(s):  
Zno Films ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve ◽  
Order Of Magnitude ◽  
Uv Visible ◽  
Diode Behavior ◽  
P Type

Transparent p–n heterojunction diodes consisting of n-type ZnO and p-type NiO thin films were prepared on glass substrates by r.f. magnetron sputtering. The structural and optical properties of the n-ZnO/p-NiO heterojunction were characterized by X-ray diffraction (XRD), UV–visible spectroscopy, Hall measurement, and I-V photocurrent measurements. The XRD shows that ZnO films are highly crystalline in nature with preferred orientation along the (0 0 2) orientation. The optical transmittances of ZnO and NiO films are 87% and 80%, respectively. The current–voltage curve of the heterojunction demonstrates obvious rectifying diode behavior in a dark environment. The lowest of leakage current is 7.73x10−8 A/cm2 for n-ZnO/p-NiO heterojunction diode. Upon UV irradiation, it was found that the detector current was increased by more than one order of magnitude. It was also found that the corresponding time constant for turn-on transient was τon = 27.9 ms while that for turn-off transient was τoff= 62.8 ms.

Highly selective NO2 sensor based on p-type nanocrystalline NiO thin films prepared by sol–gel dip coating

2018 ◽  
Vol 44 (1) ◽  
pp. 753-759 ◽  
Author(s):  
Sikai Zhao ◽  
Yanbai Shen ◽  
Pengfei Zhou ◽  
Jin Zhang ◽  
Wei Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Dip Coating ◽  
No2 Sensor ◽  
P Type

X-ray diffraction analysis for thin films of PbTiO3-La2/3TiO3 prepared by the sol-gel method

1994 ◽  
Vol 9 (8) ◽  
pp. 2133-2137 ◽  
Author(s):  
Hideki Yoshioka
Keyword(s):  
Thin Films ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Diffraction Method ◽  
Dip Coating ◽  
X Ray Diffraction ◽  
X Ray ◽  
Coating Methods ◽  
Diffraction Patterns ◽  
System 1

Thin films in the system (1 - x) PbTiO3−xLa2/3TiO3 were prepared by the sol-gel and dip-coating methods. Phases deposited in the films and the lattice parameters as a function of the composition were investigated by the x-ray diffraction method. The solid solutions with a perovskite structure were formed as a single phase with x up to 0.9. For the composition of x = 1.0, metastable La-Ti-O perovskite phase with a small amount of the impurity phase, La2Ti2O7, was obtained. Simulation of x-ray diffraction patterns based on the defect structure model shows that the structure of the La-Ti-O perovskite phase includes randomly distributed cation vacancies at the A-site, namely (La2/3□1/3)TiO3.

The Influencing Factors for the Thickness of Silica Sol-Gel Film by the Dip Coating Process

2014 ◽  
Vol 597 ◽  
pp. 165-169
Author(s):  
Jie Hong Lei ◽  
Ri Dong Zhang
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Refractive Index ◽  
Sol Gel ◽  
Dip Coating ◽  
Silica Sol ◽  
Coating Process ◽  
Power Functions ◽  
Withdrawal Speed ◽  
Gel Film

The porous sol-gel silica thin films were prepared on silicon substrate by the dip coating process. The surface roughness and microstructure of the film was measured by optical microscopy and AFM .Coating thickness and refractive index were measured by ellipsometry method. Influence of withdrawal speed and concentration of colloid was investigated for the thickness of silica. The relation of the thickness and withdrawal speed was fitted by the linear and power functions, and the results were analyzed and compared. It was found that the films with the same thickness prepared by different concentrations of colloid have different refractive indexes. The experimental results indicated that the thickness and refractive index of the film can be controlled by changing the withdrawal speed and colloid concentration.

scholarly journals Characteristics and optical properties of Fe3+ doped SiO2/TiO2 thin films prepared by the sol-gel dip-coating method

2013 ◽  
Vol 16 (1) ◽  
pp. 92-100
Author(s):  
Chien Mau Dang ◽  
Dam Duy Le ◽  
Tam Thi Thanh Nguyen ◽  
Dung Thi My Dang
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Sol Gel ◽  
Dip Coating ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
Water Contact ◽  
Glass Substrates ◽  
Coating Method ◽  
Dip Coating Method

In this study, we have successfully synthesized Fe3+ doped SiO2/TiO2 thin films on glass substrates using the sol-gel dip-coating method. After synthesizing, the samples were annealed at 5000C in the air for 1 hour. The characteristics and optical properties of Fe3+ doped SiO2/TiO2 films were then investigated by X-ray diffraction (XRD), ultraviolet-visible spectroscopy (UV-vis) and Fourier transform infrared spectroscopy (FT-IR). An antifogging ability of the glass substrates coated with the fabricated film is investigated and explained by a water contact angle under visible-light. The analyzed results also show that the crystalline phase of TiO2 thin films comprised only the anatase TiO2, but the crystalline size decreased from 8.8 to 5.9 nm. We also observed that the absorption edge of Fe3+- doped SiO2/TiO2 thin films shifted towards longer wavelengths (i.e. red shifted) from 371.7nm to 409.2 nm when the Fe3+-doped concentration increased from 0 to 1 % mol.

Sign in / Sign up

Export Citation Format

Share Document