In-Situ Spectroscopic Ellipsometry for the Control of Si based Thin Multi-Layers Grown by UHV-CVD

1994 ◽  
Vol 342 ◽  
Author(s):  
F. Glowacki ◽  
A. Larre ◽  
F. Ferrieu ◽  
Y. Campidelli ◽  
D. Bensahel
Keyword(s):  
Growth Rate ◽  
Quantum Well ◽  
Spectroscopic Ellipsometry ◽  
Growth Parameters ◽  
Optical Data ◽  
Surface Control ◽  
Different Temperatures ◽  
Multi Quantum Well

ABSTRACTIn-situ Spectroscopic Ellipsometry as a function of time is used to follow the growth of Si/SiGe Multi Quantum Well (MQW) structures. It provides both the starting surface control and the growth parameters understanding (thickness, growth rate, Ge content). Si and SiGe optical data were recorded at different temperatures on individual Si and SiGe layers. Using the measured indices and the known thicknesses of the layers, the experimental MQW data are fitted without adjustable parameters.

In-Situ Dual-Wavelength Ellipsometry and Light Scattering Monitoring of Si/Si1−xGex Heterostructures and Multiuantum Wells

1993 ◽  
Vol 324 ◽  
Author(s):  
C. Pickering ◽  
D.A.O. Hope ◽  
W.Y. Leong ◽  
D.J. Robbins ◽  
R. Greef
Keyword(s):  
Growth Rate ◽  
Light Scattering ◽  
Laser Light ◽  
Growth Period ◽  
Laser Light Scattering ◽  
Heterojunction Bipolar Transistor ◽  
Dual Wavelength ◽  
Multi Quantum Well ◽  
Refractive Index Data

AbstractIn-situ dual-wavelength ellipsometry and laser light scattering have been used to monitor growth of Si/Si1−x,Gex heterojunction bipolar transistor and multi-quantum well (MQW) structures. The growth rate of B-doped Si0 8Ge0.2 has been shown to be linear, but that of As-doped Si is non-linear, decreasing with time. Refractive index data have been obtained at the growth temperature for x = 0.15, 0.20, 0.25. Interface regions ∼ 6-20Å thickness have been detected at hetero-interfaces and during interrupted alloy growth. Period-to-period repeatability of MQW structures has been shown to be ±lML.

In Situ Spectroscopic Ellipsometry Study of SiC Oxidation at Low Oxygen-Partial-Pressures

2010 ◽  
Vol 645-648 ◽  
pp. 813-816 ◽  
Author(s):  
Keiko Kouda ◽  
Yasuto Hijikata ◽  
Hiroyuki Yaguchi ◽  
Sadafumi Yoshida
Keyword(s):  
Growth Rate ◽  
Spectroscopic Ellipsometry ◽  
Reaction Rate ◽  
Oxidation Process ◽  
Early Stage ◽  
Oxide Thickness ◽  
Oxide Growth ◽  
Low Oxygen ◽  
Partial Pressures

We have investigated the oxidation process of SiC (000-1) C-face at low oxygen partial pressures using an in-situ spectroscopic ellipsometry. The oxide growth rate decreased steeply at the early stage of oxidation and then slowly decreased with increasing oxide thickness. The initial oxide growth rate was almost proportional to the oxygen　partial　pressure for both the polar directions. This result suggests that the initial interfacial reaction rate is constant regardless of the concentration of oxidants reaching the interface.

In-situ and ex-situ characterization of GaAs/AlAs quantum well structures using spectroscopic ellipsometry

1992 ◽  
Vol 120 (1-4) ◽  
pp. 78-83 ◽  
Author(s):  
J.L. Edwards ◽  
G.N. Maracas ◽  
K.T. Shiralagi ◽  
K.Y. Choi ◽  
R. Droopad
Keyword(s):  
Quantum Well ◽  
Spectroscopic Ellipsometry ◽  
Ex Situ ◽  
Quantum Well Structures

Spectrally Resolved Cathodoluminescence Determination of Dopant Diffusion In InP/InGaAsP Based Multi Quantum Well Fabry-Perot Lasers

1999 ◽  
Vol 588 ◽  
Author(s):  
C. Zanotti-Fregonara ◽  
C. Ferrari ◽  
L. Lazzarini ◽  
G. Salviati ◽  
M. Meliga ◽  
...  
Keyword(s):  
Quantum Well ◽  
Insulating Material ◽  
Type Layer ◽  
Fabry Perot ◽  
Spectrally Resolved ◽  
P Type ◽  
Laser Devices ◽  
Multi Quantum Well

AbstractLow temperature monochromatic cathodoluminescence (CL) spectral analyses and imaging were used to determine the widths of resistive regions (due to Fe diffusion) in multi-quantum-well (MQW) InP-based laser devices and to detect the different amount of damage induced by alternative In-situ Etching (ISE) and Reactive Ion Etching (RIE) techniques. The widths of the resistive regions were estimated by comparing the 5 K CL emission width from the MQW and the actual width as obtained by SEM investigations. Monochromatic CL also did not reveal any emission from the InP:Sn layer between semi-insulating material (Fe-doped lnp) and p-type layer (Zn-doped InP), indicating interdiffusion of Fe and Zn laterally the MQW, and the presence of substantial Sn diffusion (up to 2500 nanometers) into the substrate.

In Situ Experiments in the High Voltage Electron Microscope

1976 ◽  
Vol 34 ◽  
pp. 428-429
Author(s):  
E. Paul Butler
Keyword(s):  
Growth Rate ◽  
Average Rate ◽  
Interlamellar Spacing ◽  
Cellular Growth ◽  
Voltage Electron ◽  
In Situ Experiments ◽  
Different Temperatures ◽  
Modified Equation ◽  
Good Agreement

Cellular decomposition in Ni-60wt%AuBoth cellular and spinodal decomposition into Au-rich and Ni-rich phases occur when this alloy is aged. In situobservations allowed single cell colonies to be studied as they grew through and consumed the spinodally decomposed matrix, and also provided values for the interlamellar spacing S, and growth rate G, at different temperatures. At 415°C cellular growth proceeded at an average rate of 57Å/s (Fig. 1) with S = 855Å and a compositional ratio K of 0.7. Substituting these values in the modified equation for cellular growth as if controlled by cell boundary diffusion, G = KDbδ/S2 with published values of Db and δ=5Å, gave G = 48Å/S, in good agreement with the experimentally observed growth rate.

In situ study of strain and composition of InGaN/GaN multi-quantum-well nanowires

2019 ◽  
Author(s):  
Kanya Sugitani ◽  
Takuo Sasaki ◽  
Uesugi Tomohiro ◽  
Masamitu Takahasi
Keyword(s):  
Quantum Well ◽  
In Situ Study ◽  
Multi Quantum Well

Study of MBE ZnSe Growth Using Rheed Oscillations

1989 ◽  
Vol 145 ◽  
Author(s):  
Francoise S. Turco ◽  
M.C. Tamargo
Keyword(s):  
Growth Rate ◽  
Quantitative Study ◽  
Growth Parameters ◽  
Growth Conditions ◽  
High Energy ◽  
Growth Mechanisms ◽  
Mbe Growth ◽  
Wide Range ◽  
Main Growth

AbstractReflection high energy electron diffraction (RHEED) intensity oscillations are often used to investigate in situ the growth of III-V materials by molecular beam epitaxy (MBE). In this work, we have used RHEED oscillations to perform a quantitative study of the growth mechanisms of ZnSe, a II-VI semiconductor.Our experiments illustrate that the RHEED pattern of ZnSe is far less intense than that of III-V materials grown by MBE, and no specular spot is observed over a wide range of growth conditions. We have, however, been able to record up to 25 oscillations allowing a quantitative study of the growth of ZnSe by MBE. Thus we have used RHEED oscillations to make an in situ systematic study of the influence of the three main growth parameters (substrate temperature and Zn or Se impinging fluxes) on the ZnSe growth rate. We observed that the variation of the ZnSe growth rate is due to a non unity sticking coefficient of both Zn and Se species at the interface in the standard growth conditions used. Our observations can be described using a thermodynamic model and enable us to control the desired growth conditions. Our work demonstrates the utility of RHEED oscillations to understand the MBE growth mechanisms of II-VI compounds.

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