Solid-State Luminescent Color Displays

1994 ◽  
Vol 345 ◽  
Author(s):  
Edward J. A. Pope

AbstractBy the end of 1994, flat-panel displays for lap-top computers and televisions will exceed $4.0 billion in total sales. Currently, most such displays are based entirely upon an advanced liquid crystal technology requiring several precisely aligned LC layers. A new technology for flat-panel displays, based upon the solid-state luminescence of sol-gel derived microspheres has been proposed. Silica gel-derived microspheres can be prepared at near ambient temperatures, doped with either optically-active organic dye molecules or lanthanide ions. Microspheres doped to give red, blue, and green luminescence can be arranged in a pixel pattern to form the basis of a display screen. A single monochrome LC layer is used to modulate the excitation light, or pump source, that activates the fluorescence of each pixel.


2014 ◽  
Vol 38 (12) ◽  
pp. 5793-5800 ◽  
Author(s):  
Xiaoguang Huang ◽  
Gaël Zucchi ◽  
Jacqueline Tran ◽  
Robert B. Pansu ◽  
Arnaud Brosseau ◽  
...  

Luminescent thin films of hybrid silica-based materials were studied and an Eu-containing one was coated on a near-UV LED chip to be investigated as a red phosphor.



1999 ◽  
Vol 557 ◽  
Author(s):  
J.P. Lu ◽  
P. Mei ◽  
C. Chua ◽  
J. Ho ◽  
Y. Wang ◽  
...  

AbstractWe have successfully used self-aligned Amorphous Si Thin-Film Transistors, fabricated by a laser doping/annealing process, to construct dynamic shift register circuits, which can be used as gate-line drivers or in other peripheral circuits for flat-panel displays and imagers. Taking advantage of easily scaling down the TFT channel length in a self-aligned process, much higher circuit speeds can be achieved compared to that of circuits using conventional TFTs. We have successfully demonstrated a four-phase dynamic shift register, operating at a clock speed higher that 250 kHz (1 μs for each clock phase) built on 3 μm channel length TFTs. This new technology opens up possibilities for integrating peripheral circuits in flat-panel displays and imagers based on a-Si TFTs.





1997 ◽  
Vol 488 ◽  
Author(s):  
G. Gu ◽  
P. E. Burrows ◽  
S. R. Forrest

AbstractWe provide a systematic and quantitative analysis of the design of flat panel displays (FPDs) based on organic light emitting devices (OLEDs). Key performance parameters are estimated for OLED-based displays; system issues, including addressing schemes and strategies required to achieve full color displays, are treated quantitatively. Furthermore, addressing schemes for recently demonstrated, full color, high resolution stacked OLEDs are discussed. Our analysis shows that OLED technology is suitable for many FPD applications, and can provide performance superior to that achieved using alternative display technologies.







2015 ◽  
Vol 3 (44) ◽  
pp. 11567-11576 ◽  
Author(s):  
Takayuki Chiba ◽  
Yong-Jin Pu ◽  
Junji Kido

Solution-processed organic light-emitting devices (OLEDs) have progressed as potential candidates for cost-effective solid-state lighting and flat panel displays.



Author(s):  
P. G. Kotula ◽  
D. D. Erickson ◽  
C. B. Carter

High-resolution field-emission-gun scanning electron microscopy (FESEM) has recently emerged as an extremely powerful method for characterizing the micro- or nanostructure of materials. The development of high efficiency backscattered-electron detectors has increased the resolution attainable with backscattered-electrons to almost that attainable with secondary-electrons. This increased resolution allows backscattered-electron imaging to be utilized to study materials once possible only by TEM. In addition to providing quantitative information, such as critical dimensions, SEM is more statistically representative. That is, the amount of material that can be sampled with SEM for a given measurement is many orders of magnitude greater than that with TEM.In the present work, a Hitachi S-900 FESEM (operating at 5kV) equipped with a high-resolution backscattered electron detector, has been used to study the α-Fe2O3 enhanced or seeded solid-state phase transformations of sol-gel alumina and solid-state reactions in the NiO/α-Al2O3 system. In both cases, a thin-film cross-section approach has been developed to facilitate the investigation. Specifically, the FESEM allows transformed- or reaction-layer thicknesses along interfaces that are millimeters in length to be measured with a resolution of better than 10nm.



2012 ◽  
Author(s):  
Michael Sackllah ◽  
Denny Yu ◽  
Charles Woolley ◽  
Steven Kasten ◽  
Thomas J. Armstrong


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