The Microstructure of Transiently Annealed Donor Implants in GaAs

1984 ◽  
Vol 35 ◽  
Author(s):  
M.A. Shahid ◽  
R. Bensalem ◽  
B.J. Sealy
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electrical Activity ◽  
Room Temperature ◽  
Dislocation Loops ◽  
Electrical Measurements ◽  
Ion Energy ◽  
Transmission Electron

ABSTRACTUndoped SI (100) GaAs has been implanted with selenium and tin ions at room temperature at an ion energy of 300 keV and using ion dose in the range 1 × 1014 to 1 × 1015 ions cm−2. Transient annealing at 1000°C and above has been studied using electrical measurements and transmission electron microscopy. The results show that tin implanted samples have comparatively higher values of electrical activity and mobility than those implanted with selenium ions. A difference in the microstructure of these two implants was observed. Selenium implanted samples show dislocation lines and loops possessing 1/2<110> Burgers vectors while tin implanted GaAs contains dislocation loops of 1/2<110> and 1/3<111> types and also dislocation lines having 1/2<110> Burgers vectors. Both types of defect in tin implanted samples are decorated with precipitates.

The Effect of Cryorolling on the Microstructure of Al-Cu-Mg Alloy

2016 ◽  
Vol 877 ◽  
pp. 188-193 ◽  
Author(s):  
Li Wei Quan ◽  
Wen Ning Mu ◽  
Lei Kang ◽  
Xiao Ma ◽  
Peng Han ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Tensile Strength ◽  
Yield Strength ◽  
Optical Microscopy ◽  
Room Temperature ◽  
Solution Treatment ◽  
Mg Alloy ◽  
Dislocation Loops ◽  
Transmission Electron

A precipitation hardenable Al-Cu-Mg alloy was cryorolled with liquid nitrogen followed solution treatment and then aged at 170 ̊C for different time. The microstructure was characterized by optical microscopy (OM) and transmission electron microscopy (TEM). Hardness and tensile strength were also tested. The dislocation loops in the cryorolled alloy are more than the room temperature rolled alloy. Meanwhile the hardness, yield strength and tensile strength are larger than the room temperature rolled alloy.

High Resolution Transmission Electron Microscopy of Defect Clusters in Aluminum During Electron and Ion Irradiation at Room Temperature

1996 ◽  
Vol 439 ◽  
Author(s):  
Kazuo Furuya ◽  
Min Piao ◽  
Nobuhiro Ishikawa ◽  
Tetsuya Saito
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Room Temperature ◽  
Ion Irradiation ◽  
In Situ Observation ◽  
Dislocation Loops ◽  
Frank Loop ◽  
Planar Defects ◽  
Defect Clusters ◽  
Transmission Electron

AbstractDefect clusters in Al during electron and ion irradiation have been investigated using highresolution transmission electron microscopy (HRTEM). An ION/HVEM system which consists of a high-voltage TEM and ion implanters was used for in-situ observation of damage evolution under 1000 keV electrons and 15 keV He+ irradiation at room temperature. HRTEM of Al in [110] orientation showed many planar defects along { 111 } planes during electron irradiation, while a high density of small polyhedron-shaped cavities (He-bubbles) was observed in addition to the planar defects after He+ irradiation. Multi-slice image simulation of various models of dislocation loops indicated the planar defect as an interstitial-type Frank loop.

Ion Implant Activation and Redistribution in AlxGa1–xAs

1989 ◽  
Vol 157 ◽  
Author(s):  
S. J. Pearton ◽  
W. S. Hobson ◽  
A. E. Von Neida ◽  
N. M. Haegel ◽  
K. S. Jonesf ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Activation Energy ◽  
Transmission Electron Microscopy ◽  
Electrical Activity ◽  
Mole Fraction ◽  
Electrical Activation ◽  
Dislocation Loops ◽  
Rapid Annealing ◽  
Transmission Electron ◽  
Minimal Damage

ABSTRACTThe electrical activation characteristics of implanted Be, Mg, Si and S in AlxGa1–xAs (x = 0-1) were investigated as a function of ion dose for rapid annealing in the range 600-950°C. The apparent activation energy for electrical activity of these species increases with increasing AlAs mole fraction - for Be, the activation energy is 0.35eV for GaAs and 0.49eV for Al0.54Ga0.46 As. There is no evidence for pairing of Be and O in AlGaAs, in contrast to the situation for GaAs. Self-compensation is the predominant limiting mechanism for Si activation in AlGaAs as determined by the relative photoluminescence intensities of the SiGa-to-SiAs related transitions. No significant redistribution of implanted Si is observed for any AlAs mole fraction for rapid annealing (5 sec) up to 900°C, whereas S shows motion into the AlGaAs and no tendency to outdiffuse. By contrast, both Be and Mg display loss of the dopant to the surface, and little redistribution toward the bulk. Minimal damage is observed by transmission electron microscopy in as-implanted AlGaAs for Be or Si doses below the amorphization threshold. Upon annealing at the conditions for optimum activation, a high density of small dislocation loops is observed near the end of the ion range.

Annealing Of Radiation Damage in Tungsten

1970 ◽  
Vol 28 ◽  
pp. 412-413
Author(s):  
Robert C. Rau ◽  
John Moteff
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Radiation Damage ◽  
Thermal Annealing ◽  
Neutron Fluence ◽  
Dislocation Loops ◽  
Defect Clusters ◽  
Polycrystalline Tungsten ◽  
Transmission Electron ◽  
Radiation Induced

Transmission electron microscopy has been used to study the thermal annealing of radiation induced defect clusters in polycrystalline tungsten. Specimens were taken from cylindrical tensile bars which had been irradiated to a fast (E > 1 MeV) neutron fluence of 4.2 × 1019 n/cm2 at 70°C, annealed for one hour at various temperatures in argon, and tensile tested at 240°C in helium. Foils from both the unstressed button heads and the reduced areas near the fracture were examined.Figure 1 shows typical microstructures in button head foils. In the unannealed condition, Fig. 1(a), a dispersion of fine dot clusters was present. Annealing at 435°C, Fig. 1(b), produced an apparent slight decrease in cluster concentration, but annealing at 740°C, Fig. 1(C), resulted in a noticeable densification of the clusters. Finally, annealing at 900°C and 1040°C, Figs. 1(d) and (e), caused a definite decrease in cluster concentration and led to the formation of resolvable dislocation loops.

Scanning and Transmission Electron Microscopy of Human Red Blood Cells

1969 ◽  
Vol 27 ◽  
pp. 44-45
Author(s):  
A.J. Tousimis ◽  
T.R. Padden
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Blood Cells ◽  
Room Temperature ◽  
Type Specimen ◽  
New Combination ◽  
Human Red Blood Cells ◽  
Transmission Electron ◽  
Microscope Slides ◽  
Scanning Electron

The size, shape and surface morphology of human erythrocytes (RBC) were examined by scanning electron microscopy (SEM), of the fixed material directly and by transmission electron microscopy (TEM) of surface replicas to compare the relative merits of these two observational procedures for this type specimen.A sample of human blood was fixed in glutaraldehyde and washed in distilled water by centrifugation. The washed RBC's were spread on freshly cleaved mica and on aluminum coated microscope slides and then air dried at room temperature. The SEM specimens were rotary coated with 150Å of 60:40- gold:palladium alloy in a vacuum evaporator using a new combination spinning and tilting device. The TEM specimens were preshadowed with platinum and then rotary coated with carbon in the same device. After stripping the RBC-Pt-C composite film, the RBC's were dissolved in 2.5N HNO3 followed by 0.2N NaOH leaving the preshadowed surface replicas showing positive topography.

Formation of Dislocation Channels in Neutron Irradiated Molybdenum

1972 ◽  
Vol 30 ◽  
pp. 672-673
Author(s):  
S. Mahajan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ambient Temperature ◽  
Room Temperature ◽  
Channel Formation ◽  
Early Stages ◽  
Transmission Electron ◽  
Three Stages ◽  
Two Stages ◽  
Polycrystalline Molybdenum

The evolution of dislocation channels in irradiated metals during deformation can be envisaged to occur in three stages: (i) formation of embryonic cluster free regions, (ii) growth of these regions into microscopically observable channels and (iii) termination of their growth due to the accumulation of dislocation damage. The first two stages are particularly intriguing, and we have attempted to follow the early stages of channel formation in polycrystalline molybdenum, irradiated to 5×1019 n. cm−2 (E > 1 Mev) at the reactor ambient temperature (∼ 60°C), using transmission electron microscopy. The irradiated samples were strained, at room temperature, up to the macroscopic yield point.Figure 1 illustrates the early stages of channel formation. The observations suggest that the cluster free regions, such as A, B and C, form in isolated packets, which could subsequently link-up to evolve a channel.

Black-white contrast of dislocation loops

1978 ◽  
Vol 36 (1) ◽  
pp. 328-329
Author(s):  
J. J. Hren ◽  
W. D. Cooper ◽  
L. J. Sykes
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Dislocation Loops ◽  
Major Premise ◽  
Burgers Vector ◽  
Transmission Electron ◽  
Primary Means ◽  
Contrast Analysis ◽  
Dot Product ◽  
Imaging Conditions

Small dislocation loops observed by transmission electron microscopy exhibit a characteristic black-white strain contrast when observed under dynamical imaging conditions. In many cases, the topography and orientation of the image may be used to determine the nature of the loop crystallography. Two distinct but somewhat overlapping procedures have been developed for the contrast analysis and identification of small dislocation loops. One group of investigators has emphasized the use of the topography of the image as the principle tool for analysis. The major premise of this method is that the characteristic details of the image topography are dependent only on the magnitude of the dot product between the loop Burgers vector and the diffracting vector. This technique is commonly referred to as the (g•b) analysis. A second group of investigators has emphasized the use of the orientation of the direction of black-white contrast as the primary means of analysis.

A crystallographic analysis of the CoSi/Si(111) interface using Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 574-575
Author(s):  
A.C. Daykin ◽  
C.J. Kiely ◽  
R.C. Pond ◽  
J.L. Batstone
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Defect Structure ◽  
Room Temperature ◽  
Theoretical Method ◽  
Crystallographic Analysis ◽  
Si Substrate ◽  
Transmission Electron ◽  
Theoretical Predictions

When CoSi2 is grown onto a Si(111) surface it can form in two distinct orientations. A-type CoSi2 has the same orientation as the Si substrate and B-type is rotated by 180° degrees about the [111] surface normal.One method of producing epitaxial CoSi2 is to deposit Co at room temperature and anneal to 650°C.If greater than 10Å of Co is deposited then both A and B-type CoSi2 form via a number of intermediate silicides .The literature suggests that the co-existence of A and B-type CoSi2 is in some way linked to these intermediate silicides analogous to the NiSi2/Si(111) system. The phase which forms prior to complete CoSi2 formation is CoSi. This paper is a crystallographic analysis of the CoSi2/Si(l11) bicrystal using a theoretical method developed by Pond. Transmission electron microscopy (TEM) has been used to verify the theoretical predictions and to characterise the defect structure at the interface.

Synthesis and TEM study of Ag–In–(Eu, Ce) ternary approximants

2009 ◽  
Vol 224 (1-2) ◽  
Author(s):  
Kazue Nishimoto ◽  
Miki Muraki ◽  
Ryuji Tamura
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Room Temperature ◽  
Transmission Electron

AbstractTernary Ag–In–(Eu, Ce) 1/1 approximants are synthesized and their structures are studied by transmission electron microscopy (TEM). For both the approximants, superlattice spots are clearly observed at room temperature, and the superstructures of the Ag–In–(Eu, Ce) approximants are found to be similar to those of Cd

Sign in / Sign up

Export Citation Format

Share Document