Study of Wsi2 and Cosi2 Thin Films Deposited by Laser Ablation

1994 ◽  
Vol 354 ◽  
Author(s):  
V.G. Glebovsky ◽  
S.N. Ermolov ◽  
R.A. Oganyan ◽  
E.D. Stinov
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Elemental Composition ◽  
Refractory Metal ◽  
Liquid State ◽  
Electric Resistance ◽  
Cobalt Disilicide ◽  
X Ray ◽  
Specific Electric Resistance

AbstractIt has been shown, that pure massive targets of tungsten and cobalt disilicide can be obtain from the liquid state by means of a set of metallurgical methods. The conditions of laser ablation of the targets ensuring the preparation of tungsten and cobalt suicide films of the specific electric resistance 50 and 30 μΩ cm respectivly have been studied. The grazing beam X-ray difractometry were used to investigate their phase and elemental composition of the films. The method in question has been shown to be promising for the preparation of films of other refractory - metal suicides.

Lead Zirconate-Titanate Thin Films Prepared by the Laser Ablation Technique

1990 ◽  
Vol 200 ◽  
Author(s):  
C. K. Chiang ◽  
L. P. Cook ◽  
P. K. Schenck ◽  
P. S. Brody ◽  
J. M. Benedetto
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Lead Zirconate Titanate ◽  
Lead Zirconate ◽  
X Ray ◽  
Ablation Technique ◽  
Zirconate Titanate ◽  
Deposited Films ◽  
Plate Type ◽  
Laser Ablation Technique

ABSTRACTLead zirconate-titanate (PZT) thin films were prepared by the laser ablation technique. The PZT (Zr/Ti=53/47) target was irradiated using a focused q-switched Nd:YAG laser (15 ns, 100 mJ at 1.064 μ;m). The as-deposited films were amorphous as indicated by X-ray powder patterns, but crystallized readily with brief annealing above 650°C. The dielectric constant and the resistivity of the crystallized films were studied using a parallel-plate type capacitor structure.

Structural and Electrical Properties of Colossal Magnetoresistive LSMO Thin Films Prepared by KrF Laser Ablation Method

2001 ◽  
Vol 666 ◽  
Author(s):  
Fumiaki Mitsugi ◽  
Tomoaki Ikegami ◽  
Kenji Ebihara ◽  
Jagdish Narayan ◽  
Alexander M. Grishin
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Electrical Properties ◽  
Lattice Mismatch ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
X Ray ◽  
Colossal Magnetoresistive ◽  
Laser Ablation Method ◽  
Structural And Electrical Properties

ABSTRACTWe prepared colossal magnetoresistive La0.8Sr0.2MnO3 thin films on the MgO, SrTiO3 and LaAlO3 single crystal substrates using KrF excimer pulsed laser ablation technique. The structural and electrical properties of the La0.8Sr0.2MnO3 thin films which were strained by the lattice mismatch are reported. The in-plane lattice mismatch between the La0.8Sr0.2MnO3 and MgO, SrTiO3 and LaAlO3 substrates are -7.8 %, -0.5 % and +2.3 %, respectively. The X-ray diffraction spectra of the films exhibited c-axis orientation. In the case of the La0.8Sr0.2MnO3 / LaAlO3 thin films with thickness over 100 nm, the divided (00l) peaks were observed. The surface morphology and transport property of the strongly stressed La0.8Sr0.2MnO3 / LaAlO3 were different from those of La0.8Sr0.2MnO3 / MgO and La0.8Sr0.2MnO3 / SrTiO3thin films.

HIGH-QUALITY Tl2Ba2Ca2Cu3O10 THIN FILMS FABRICATED VIA LASER ABLATION

1993 ◽  
Vol 07 (01) ◽  
pp. 19-23 ◽  
Author(s):  
W. A. LUO ◽  
Y. Q. TANG ◽  
Y. Z. CHEN ◽  
I. N. CHAN ◽  
K. Y. CHEN ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Critical Current Density ◽  
Current Density ◽  
Superconducting Thin Films ◽  
X Ray Diffraction ◽  
High Quality ◽  
Step Process ◽  
X Ray ◽  
Zero Resistance

In this letter, we describe results obtained via laser ablation to fabricate Tl 2 Ba 2 Ca 2 Cu 3- O 10 superconducting thin films using a two-step process. We found that the zero-resistance temperatures are up to 121 K, while the onset temperatures are up to 125 K. The T c and J c are mainly determined by a non-contact new technique for high-T c films. The typical critical current density, J c , is about 106 A/cm 2 at 77 K. X-ray diffraction showed that the superconducting thin films are nearly single 2223 phase and are highly oriented.

Laser Ablation of Highly Oriented Cdse Thin Films and Cdte/Cdse Multilayers on Silicon Substrate

1995 ◽  
Vol 397 ◽  
Author(s):  
M. Ambrico ◽  
R. Martino ◽  
D. Smaldone ◽  
V. Capozzi ◽  
G. Lorusso ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Substrate Temperature ◽  
Silicon Substrate ◽  
X Ray ◽  
Si Films ◽  
Polycrystalline Structures ◽  
High Orientation ◽  
Deposited Films ◽  
Laser Ablation Technique

ABSTRACTLaser ablation technique has been successfully used for the deposition of CdSe and CdTe/CdSe multilayers on Si(100) and Si(l11) substrates. X-ray analysis showed that CdSe/Si films were highly oriented. Their orientation changed from (100) to (002) by varying the substrate temperature from 473 to 673K. High orientation was also obtained on multilayered polycrystalline structures of CdSe and CdTe on Si(lll). Photoluminescence experiments have also been carried out on the deposited films.

Preparation and characterization of laser-ablated multicomponent chalcogenide thin films

1990 ◽  
Vol 5 (3) ◽  
pp. 511-514 ◽  
Author(s):  
Didarul Islam ◽  
C. E. Brient ◽  
R. L. Cappelletti
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Thermal Evaporation ◽  
Analytical Techniques ◽  
X Rays ◽  
Single Source ◽  
X Ray ◽  
Chalcogenide Thin Films ◽  
Scanning Electron

The preparation of multicomponent chalcogenide glassy thin films from bulk targets by laser ablation is described. The film stoichiometries are characterized by proton-induced x-ray emission (PIXE). Compared to single source thermal evaporation, laser ablation is found to preserve starting stoichiometries in the resulting thin films far more accurately. Thermally evaporated films were studied both by PIXE and by energy dispersed x rays (EDX) produced in a scanning electron microscope, and the results of these two analytical techniques compare well.

Effect of Deposition Time on Structure of TiAlN Thin Films Deposited by Reactive DC Magnetron Co-Sputtering

2017 ◽  
Vol 866 ◽  
pp. 318-321 ◽  
Author(s):  
Nirun Witit-Anun ◽  
Adisorn Buranawong
Keyword(s):  
Thin Films ◽  
Elemental Composition ◽  
Deposition Time ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
Titanium Aluminum ◽  
Titanium Aluminum Nitride ◽  
Deposited Films ◽  
Section Analysis

Titanium aluminum nitride (TiAlN) thin films were deposited by reactive DC magnetron co-sputtering technique on Si substrate. The effect of deposition time on the structure of the TiAlN films was investigated. The crystal structure, surface morphology, thickness and elemental composition were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and energy dispersive X-ray spectroscopy (EDS) technique, respectively. The results showed that, all the as-deposited films were formed as a (Ti,Al)N solid solution. The as-deposited thin films exhibited a nanostructure with a crystallite size of less than 30 nm. The film thickness increase from 115 nm to 329 nm, while the lattice parameter decrease from 4.206 Å to 4.196 Å, with increasing of the deposition time. Cross section analysis by FE-SEM showed compact columnar and dense morphology as a result of increasing the deposition time. The elemental composition of the as-deposited films varied with the deposition time.

scholarly journals Growth of Copper Indium Telluride (Cuinte2) Thin Films Using Electrochemical Route for Photovoltaic Application

2012 ◽  
Vol 12 ◽  
pp. 318-323 ◽  
Author(s):  
Subash Adhikari ◽  
NB Chaure
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Elemental Composition ◽  
Indium Tin Oxide ◽  
Secondary Phase ◽  
Annealed Sample ◽  
X Ray ◽  
Copper Indium ◽  
Electrochemically Deposited ◽  
Indium Telluride

Copper indium di-telluride (CuInTe2; CIT) was electrochemically deposited onto indium tin oxide (ITO) substrate using aqueous medium at various electrodeposition conditions like temperature, pH, stirring rate and concentration of the samples. The resulting thin films were characterized using UV-Visible-NIR spectrophotometer, X-ray diffractometer, scanning electron microscopy and energy dispersive X-ray to find out energy band gap, structural properties, surface morphology and the elemental composition in the film respectively. The resulting films showed a polycrystalline nature with band gap varying from 1.27 to 1.89 eV. The elemental composition of the as deposited and annealed sample showed that the films were mostly copper and tellurium rich. The crystallinity of the films improved after annealing for 5 minutes at 350°C but the secondary phase like CuxTe and InxTe could not be recombined completely.DOI: http://dx.doi.org/10.3126/njst.v12i0.6519 Nepal Journal of Science and Technology 12 (2011) 318-323 

scholarly journals Preparation of the group III nitride thin films AlN, GaN, InN by direct and reactive pulsed laser ablation

2001 ◽  
Vol 3 (3) ◽  
pp. 111-121 ◽  
Author(s):  
Aldo Mele ◽  
Anna Giardini ◽  
Tonia M. Di Palma ◽  
Chiara Flamini ◽  
Hideo Okabe ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Group Iii Nitrides ◽  
X Ray Diffraction ◽  
Subsequent Reaction ◽  
X Ray ◽  
Group Iii ◽  
Emission Spectroscopic Analysis ◽  
Group Iii Nitride

The methods of preparation of the group III nitrides AlN, GaN, and InN by laser ablation (i.e. laser sputtering), is here reviewed including studies on their properties. The technique, concerns direct ablation of nitride solid targets by laser to produce a plume which is collected on a substrate. Alternatively nitride deposition is obtained as a result of laser ablation of the metal and subsequent reaction in anNH3atmosphere. Optical multichannel emission spectroscopic analysis, and time of flight (TOF) mass spectrometry have been applied forin situidentification of deposition precursors in the plume moving from the target. Epitaxial AlN, GaN, and InN thin films on various substrates have been grown. X-ray diffraction, scanning electron microscopy, have been used to characterise thin films deposited by these methods.

Characterization of BaTiO3 Thin Films Deposited by Pulsed-Laser Ablation

1990 ◽  
Vol 201 ◽  
Author(s):  
Christopher Scarfone ◽  
M. Grant Norton ◽  
C. Barry Carter ◽  
Jian Li ◽  
James W. Mayer
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Film Surface ◽  
Pulsed Laser Ablation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Channeling ◽  
Very High

AbstractThin films of barium titanate (BaTiOs) have been deposited by pulsed-laser ablation onto (001)-oriented MgO substrates. The films were epitactic as evidenced by both x-ray diffraction and ion-channeling techniques. The film surface appeared smooth and contained a low density of particulates. This latter feature is believed to be due to the formation of target pellets having a very high density.

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