Mechanical Stresses During Solid State Amorphization of Zr/Co Multilayers

1994 ◽  
Vol 356 ◽  
Author(s):  
M. Moske ◽  
K. Samwer

AbstractThin film structures of crystalline Zr and Co, deposited in UHV, are investigated by bending beam technique and by X-ray diffraction. During isothermal annealing and interdiffusion reaction of the thin film double layer and multilayer packages large compressive stresses are generated while an amorphous ZrCo-phase is formed. This can, at first hand, be understood in terms of the Kirkendall effect where Co atoms, as the main moving species, lead to a volume increase of the film beyond the Co interface. The observed change in Zr lattice spacing in accordance with the evolution of mechanical stress indicates that the compressive stress is built up particularly within the Zr layer due to the solution of Co in Zr grains during the initial amorphization reaction. Film structures, having Co already present in the crystalline Zr layer after film deposition, show a decrease in reaction kinetics combined with a lower stress level, indicating that the interdiffusion reaction is depending on the stress state in the Zr grains. At late stages of annealing in high vacuum a sudden increase of additional compressive stress is observed, which could be attributed to the oxidation of Zr, very likely due to the formation of diffusion paths for oxygen through the Co (cap-) layer (Kirkendall voids). Such oxidation behavior was not observed with samples measured in situ in UHV directly after film deposition.

2006 ◽  
Vol 326-328 ◽  
pp. 689-692
Author(s):  
Seung Jae Moon

The thermal conductivity of amorphous silicon (a-Si) thin films is determined by using the non-intrusive, in-situ optical transmission measurement. The thermal conductivity of a-Si is a key parameter in understanding the mechanism of the recrystallization of polysilicon (p-Si) during the laser annealing process to fabricate the thin film transistors with uniform characteristics which are used as switches in the active matrix liquid crystal displays. Since it is well known that the physical properties are dependent on the process parameters of the thin film deposition process, the thermal conductivity should be measured. The temperature dependence of the film complex refractive index is determined by spectroscopic ellipsometry. A nanosecond KrF excimer laser at the wavelength of 248 nm is used to raise the temperature of the thin films without melting of the thin film. In-situ transmission signal is obtained during the heating process. The acquired transmission signal is fitted with predictions obtained by coupling conductive heat transfer with multi-layer thin film optics in the optical transmission measurement.


2005 ◽  
Vol 875 ◽  
Author(s):  
P. Goudeau ◽  
N. Tamura ◽  
G. Parry ◽  
J. Colin ◽  
C. Coupeau ◽  
...  

AbstractStress/Strain fields associated with thin film buckling induced by compressive stresses or blistering due to the presence of gas bubbles underneath single crystal surfaces are difficult to measure owing to the microscale dimensions of these structures. In this work, we show that micro Scanning X-ray diffraction is a well suited technique for mapping the strain/stress tensor of these damaged structures.


2018 ◽  
Vol 6 (15) ◽  
pp. 3834-3844 ◽  
Author(s):  
José Manuel Vila-Fungueiriño ◽  
Beatriz Rivas-Murias ◽  
Juan Rubio-Zuazo ◽  
Adrian Carretero-Genevrier ◽  
Massimo Lazzari ◽  
...  

Chemical solution methods for thin-film deposition constitute an affordable alternative to high-vacuum physical technologies, like Sputtering, Pulsed Laser Deposition (PLD) or Molecular Beam Epitaxy (MBE).


1996 ◽  
Vol 428 ◽  
Author(s):  
E. Chason ◽  
J. A. Floro

AbstractWe have developed a technique for measuring thin film stress during growth by monitoring the wafer curvature. By measuring the deflection of multiple parallel laser beams with a CCD detector, the sensitivity to vibration is reduced and a radius of curvature limit of 4 km has been obtained in situ. This technique also enables us to obtain a 2-dimensional profile of the surface curvature from the simultaneous reflection of a rectangular array of beams. Results from the growth of SiGe alloy films are presented to demonstrate the unique information that can be obtained during growth.


1998 ◽  
Vol 313-314 ◽  
pp. 511-515 ◽  
Author(s):  
Xiang Gao ◽  
Darin W Glenn ◽  
John A Woollam

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