scholarly journals Strain mapping on gold thin film buckling and silicon blistering

2005 ◽  
Vol 875 ◽  
Author(s):  
P. Goudeau ◽  
N. Tamura ◽  
G. Parry ◽  
J. Colin ◽  
C. Coupeau ◽  
...  
Keyword(s):  
Thin Film ◽  
X Ray Diffraction ◽  
Crystal Surfaces ◽  
Strain Mapping ◽  
Strain Fields ◽  
Single Crystal Surfaces ◽  
X Ray ◽  
Gold Thin Film ◽  
Compressive Stresses ◽  
Strain Stress

AbstractStress/Strain fields associated with thin film buckling induced by compressive stresses or blistering due to the presence of gas bubbles underneath single crystal surfaces are difficult to measure owing to the microscale dimensions of these structures. In this work, we show that micro Scanning X-ray diffraction is a well suited technique for mapping the strain/stress tensor of these damaged structures.

scholarly journals Ultrahigh vacuum chamber for synchrotron x‐ray diffraction from films adsorbed on single‐crystal surfaces

1992 ◽  
Vol 63 (8) ◽  
pp. 3835-3841 ◽  
Author(s):  
J. R. Dennison ◽  
S.‐K. Wang ◽  
P. Dai ◽  
T. Angot ◽  
H. Taub ◽  
...  
Keyword(s):  
Single Crystal ◽  
Vacuum Chamber ◽  
Ultrahigh Vacuum ◽  
X Ray Diffraction ◽  
Crystal Surfaces ◽  
Single Crystal Surfaces ◽  
X Ray

Relaxation mechanisms in a gold thin film on a compliant substrate as revealed by X-ray diffraction

2017 ◽  
Vol 110 (21) ◽  
pp. 211901 ◽  
Author(s):  
Pierre Godard ◽  
Pierre-Olivier Renault ◽  
Damien Faurie ◽  
Dominique Thiaudière
Keyword(s):  
Thin Film ◽  
X Ray Diffraction ◽  
Compliant Substrate ◽  
X Ray ◽  
Gold Thin Film

ON THE X-RAY DIFFRACTION ON PARATELLURITE SINGLE CRYSTAL SURFACES

2007 ◽  
Vol 21 (0) ◽  
pp. 220-224
Author(s):  
О. М. Юрійчук ◽  
Л. А. Проц ◽  
І. І. Чичура ◽  
К. П. Попович
Keyword(s):  
Single Crystal ◽  
X Ray Diffraction ◽  
Crystal Surfaces ◽  
Single Crystal Surfaces ◽  
X Ray

Measurement of Elastic Strains in Crystal Surfaces by X-Ray Diffraction Topography

1967 ◽  
Vol 11 ◽  
pp. 385-393
Author(s):  
Brian R. Lawn
Keyword(s):  
Strain Field ◽  
Crystal Surface ◽  
Silicon Surfaces ◽  
X Ray Diffraction ◽  
Crystal Surfaces ◽  
Strain Fields ◽  
Diamond Surfaces ◽  
X Ray ◽  
Detailed Nature ◽  
Elastic Strains

AbstractThe use of X-ray topographic techniques for studying elastic strains in crystals deformed at their surfaces is becoming widespread, especially in the field of silicon semiconductor devices. Although the broad features of the phenomenological processes involved in producing the strain patterns on the X-ray micrographs are understood, little attention has been devoted to evaluating the detailed nature or range of the strain fields in the crystal. In this paper, an clastic model is proposed for cases in which a region of crystal surface is uniformly deformed over a thin layer. With this model, the associated strain field in the surrounding crystal, which is readily computed from elasticity theory, may be characterized by a single parameter. The model is in accord with observed strain patterns on topographs of abraded diamond surfaces and silicon surfaces onto which a strip of metal film has been evaporated. From the spatial range of the diffraction contrast, an estimate of the parameter characterizing the strain field may be made.

PROBING STRAIN FIELDS ABOUT THIN FILM STRUCTURES USING X-RAY MICRODIFFRACTION

2003 ◽  
Vol 795 ◽  
Author(s):  
C. E. Murray ◽  
I. C. Noyan ◽  
P. M. Mooney ◽  
B. Lai ◽  
Z. Cai
Keyword(s):  
Thin Film ◽  
Characteristic Curve ◽  
Decay Rates ◽  
X Rays ◽  
X Ray Diffraction ◽  
Strain Fields ◽  
X Ray ◽  
Interaction Field ◽  
Rate Of Decay ◽  
Interaction Regions

ABSTRACTThe transfer of strain between thin film features and the underlying substrate represents an important factor in the performance and reliability of semiconductor devices, particularly as the distances between these structures decrease. In order to characterize the interaction regions produced in the substrate due to strained thin film structures, we employed synchrotron-based x-ray diffraction techniques to map the enhanced diffracted intensity of the single-crystal Si substrate at sub-micron resolution. The dynamic-to-kinematic transition observed in the scattering of x-rays from deformed crystals makes this technique extremely sensitive to the amount of substrate deformation as a function of position. Measurements were conducted on 1 μm thick Ni dots evaporated onto Si (111) substrates and 0.24 μm thick, heteroepitaxially grown SiGe strips of various widths on Si (001). The interaction field resolved by the enhanced Si diffracted intensity in the substrate extended up to 100 times the thickness of these features. Although the boundary of the interaction field varied as a function of feature width, a characteristic curve was generated to describe the decay rate of enhanced Si diffracted intensity when the distance from the feature edge is normalized by a mean interaction distance (MID). The rate of decay of the strain fields predicted by traditional treatments of the mechanical interaction between the thin film and substrate did not correspond to the measured decay rates.

In Situ Investigations of Chemical Reactions on Surfaces by X-Ray Diffraction at Atomospheric Pressures

MRS Bulletin ◽  
2007 ◽  
Vol 32 (12) ◽  
pp. 1010-1014 ◽  
Author(s):  
S. Ferrer ◽  
M. D. Ackermann ◽  
E. Lundgren
Keyword(s):  
Research Field ◽  
Catalytic Reactions ◽  
Atomic Scale ◽  
Oxidation Reactions ◽  
X Ray Diffraction ◽  
Crystal Surfaces ◽  
Single Crystal Surfaces ◽  
X Ray ◽  
Adsorption Sites

AbstractCatalytic reactions occurring at metal surfaces and nanoparticles have been an established research field for decades, yielding information on adsorption sites and reaction pathways under ultrahigh-vacuum conditions. Recent experimental developments have made it possible to perform well-controlled in situ surface x-ray diffraction measurements from single-crystal surfaces and nanoparticles under industrially relevant conditions. In this way, a new understanding of atomic-scale processes at surfaces and nanoparticles occurring during catalytic reactions under realistic conditions has been gained. In particular, the identification of the formation of thin oxides on model catalysts and their role in oxidation reactions demonstrates the importance of in situ probes under relevant conditions.

Palladium Nanowire Thin Films via Template Growth

2003 ◽  
Vol 775 ◽  
Author(s):  
Donghai Wang ◽  
David T. Johnson ◽  
Byron F. McCaughey ◽  
J. Eric Hampsey ◽  
Jibao He ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Conductive Substrate ◽  
Palladium Nanowires ◽  
Efficient Route ◽  
Silica Thin Film

AbstractPalladium nanowires have been electrodeposited into mesoporous silica thin film templates. Palladium continually grows and fills silica mesopores starting from a bottom conductive substrate, providing a ready and efficient route to fabricate a macroscopic palladium nanowire thin films for potentially use in fuel cells, electrodes, sensors, and other applications. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate it is possible to create different nanowire morphology such as bundles and swirling mesostructure based on the template pore structure.

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