Effects of Rheological Characteristics of Sol on Preferential Orientation of Pb(Mg,Zn)1/3Nb2/3O3 Thin Films

1994 ◽  
Vol 361 ◽  
Author(s):  
Hyun M. Jang ◽  
Mun K. Cho
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Film Formation ◽  
Preferential Orientation ◽  
Rheological Characteristics ◽  
X Ray ◽  
Spin Casting ◽  
X Ray Scattering ◽  
Scattering Experiment ◽  
Thin Film Formation

ABSTRACTThin films of Pb(Mg,Zn)1/3Nb2/3O3 were fabricated by spin casting the Pb-Mg-Zn-Nb-0 complex alkoxide sols on (111)Pt-coated MgO (100) planes. It was observed that the rheological characteristics of sol greatly influenced the orientation of perovskite grains after thin-film formation. A strong preferential orientation of (100)-type planes of the perovskite grains was obtained in the thin films derived from the sols exhibiting pseudoplastic behavior. Small angle X-ray scattering experiment in the Porod region was performed to correlate the observed preferential orientation with the network structure of precursors at various stages of aging. It was shown that weakly branched precursor chains led to highly oriented grains after thin-film formation.

Intrinsic Stress in Sputtered Thin Films

1994 ◽  
Vol 356 ◽  
Author(s):  
Tai D. Nguyen ◽  
Tue Nguyen ◽  
James H. Underwood
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Film Formation ◽  
Substrate Surface ◽  
Dynamics Simulation ◽  
Intrinsic Stress ◽  
Stress Evolution ◽  
X Ray ◽  
Measured Stress ◽  
Thin Film Formation

AbstractUnderstanding of the stress in thin films is important in controls of the properties of nanometer period x-ray multilayers. Stress evolution at the initial stages of thin film formation was studied by molecular dynamics simulation of Mo atoms impinging on a 5×5×5 unit cell Mo substrate. The simulation shows that the structure initially increases in a compressive state. The stress then decreases when the deposited atoms have covered the substrate surface. Measured stress of Ru films in Ru/C multilayers by laser curvature technique shows similar behavior to the simulated results.

Time-Resolved Nanostructural Analysis of Thin-Film Formation Process from Nafion Solution by Synchrotron X-Ray Scattering

2016 ◽  
Vol 75 (14) ◽  
pp. 637-642 ◽  
Author(s):  
Y. Konosu ◽  
H. Masunaga ◽  
T. Hikima ◽  
M. Tokita ◽  
H. Matsumoto ◽  
...  
Keyword(s):  
Thin Film ◽  
Formation Process ◽  
Film Formation ◽  
Time Resolved ◽  
X Ray ◽  
X Ray Scattering ◽  
Thin Film Formation ◽  
Ray Scattering

Quantifying Multiple Crystallite Orientations and Crystal Heterogeneities in Complex Thin Film Materials

2019 ◽  
Author(s):  
Jonathan Ogle ◽  
Daniel Powell ◽  
Eric Amerling ◽  
Detlef Matthias Smilgies ◽  
Luisa Whittaker-Brooks
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Structural Design ◽  
Grazing Incidence ◽  
Crystallite Orientation ◽  
Miller Index ◽  
X Ray ◽  
X Ray Scattering ◽  
Orientation Distributions ◽  
Orientation Information

<p>Thin film materials have become increasingly complex in morphological and structural design. When characterizing the structure of these films, a crucial field of study is the role that crystallite orientation plays in giving rise to unique electronic properties. It is therefore important to have a comparative tool for understanding differences in crystallite orientation within a thin film, and also the ability to compare the structural orientation between different thin films. Herein, we designed a new method dubbed the mosaicity factor (MF) to quantify crystallite orientation in thin films using grazing incidence wide-angle X-ray scattering (GIWAXS) patterns. This method for quantifying the orientation of thin films overcomes many limitations inherent in previous approaches such as noise sensitivity, the ability to compare orientation distributions along different axes, and the ability to quantify multiple crystallite orientations observed within the same Miller index. Following the presentation of MF, we proceed to discussing case studies to show the efficacy and range of application available for the use of MF. These studies show how using the MF approach yields quantitative orientation information for various materials assembled on a substrate.<b></b></p>

A facile room temperature chemical transformation approach for binder-free thin film formation of Ag2Te and lithiation/delithiation chemistry of the film

2016 ◽  
Vol 45 (43) ◽  
pp. 17312-17318 ◽  
Author(s):  
Eun-Kyung Kim ◽  
Dasom Park ◽  
Nabeen K. Shrestha ◽  
Jinho Chang ◽  
Cheol-Woo Yi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Aqueous Solution ◽  
Ion Exchange ◽  
Chemical Transformation ◽  
Room Temperature ◽  
Film Formation ◽  
Synthetic Method ◽  
Binder Free ◽  
Thin Film Formation

An aqueous solution based synthetic method for binder-free Ag2Te thin films using ion exchange induced chemical transformation of Ag/AgxO thin films.

Grazing-incidence X-ray scattering of lamellar thin films

2019 ◽  
Vol 52 (2) ◽  
pp. 247-251
Author(s):  
Detlef-M. Smilgies
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Small Molecules ◽  
Film Studies ◽  
Grazing Incidence ◽  
Semicrystalline Polymers ◽  
X Ray ◽  
X Ray Scattering ◽  
Incident Plane ◽  
Ray Scattering

Recently, surface and thin-film studies using area detectors have become prevalent. An important class of such systems are lamellar thin films formed by small molecules, liquid crystals or semicrystalline polymers. Frequently, the lamellae align more or less parallel to the substrate. Such structures can be easily discerned by their characteristic X-ray scattering close to the incident plane. This paper describes how such patterns can be simulated, in order to extract morphological information about the thin film.

scholarly journals Metal phthalocyanines: thin-film formation, microstructure, and physical properties

RSC Advances ◽  
2021 ◽  
Vol 11 (35) ◽  
pp. 21716-21737
Author(s):  
Rosemary R. Cranston ◽  
Benoît H. Lessard
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Physical Properties ◽  
Small Molecules ◽  
Film Formation ◽  
Proper Function ◽  
Next Generation ◽  
Metal Phthalocyanines ◽  
Thin Film Formation

Metal phthalocyanines (MPcs) are an abundant class of conjugated small molecules comprising and their integration into thin films is critial for the proper function of next generation applications.

Principal Residual Strains as A function of Depth for Sputter Deposited Mo Thin Films

1994 ◽  
Vol 356 ◽  
Author(s):  
S. G. Malhotra ◽  
Z. U. Rek ◽  
L. J. Parfitt ◽  
S. M. Yalisove ◽  
J. C. Bilello
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grazing Incidence ◽  
X Ray ◽  
X Ray Scattering ◽  
Out Of Plane ◽  
Residual Strains ◽  
Sputter Deposited ◽  
Film Substrate ◽  
Principal Strains

AbstractTraditionally, the magnitude of the stress in a thin film is obtained by measuring the curvature of the film-substrate couple; however, these techniques all measure the average stress throughout the film thickness. On a microscopic level, the details of the strain distribution as a function of depth through the thickness of the film can have important consequences in governing film quality and ultimate morphology. A new method for determining the magnitude of principal strains (strain eigenvalues) as a function of x-ray penetration depth using grazing incidence x-ray scattering for a polycrystalline thin film will be described. Results are reported for two Mo metallizations ˜ 500 Å and ˜1000 Å thick sputtered onto Si {100} substrates. The magnitude of the principal strains at several penetration depths was accomplished by an analysis of the diffraction peak shifts of at least six independent {hkl} scattering vectors from the Mo thin films. An out-of-plane strain gradient was identified in both Mo films and the strain eigenvalues were found to be anisotropic in nature. This new methodology should work with a variety of thin films and hence would provide quantitative insight into the evolution of thin film microstructure.

Ru Thin Film Formation Using Oxygen Plasma Enhanced ALD and Rapid Thermal Processing

2015 ◽  
Vol 815 ◽  
pp. 8-13
Author(s):  
Chun Min Zhang ◽  
Xiao Yong Liu ◽  
Lin Qing Zhang ◽  
Hong Liang Lu ◽  
Peng Fei Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Processing ◽  
Oxygen Plasma ◽  
Film Formation ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Line Process ◽  
Formation Method ◽  
Thin Film Formation

A novel Ru thin film formation method was proposed to deposit metallic Ru thin films on TiN substrate for future backend of line process in semiconductor technologies. RuO2 thin films were first grown on TiN substrate by oxygen plasma-enhanced atomic layer deposition technique. The deposited RuO2 thin films were then reduced into metallic Ru thin films by H2/N2-assisted annealing.

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