scholarly journals Fabrication of Optical Channel Waveguides in the GaAs/AlGaAs System by Mev Ion Beam Bombardment

1994 ◽  
Vol 373 ◽  
Author(s):  
T. Taylor ◽  
D. Ila ◽  
R. L. Zimmerman ◽  
P. R. Ashley ◽  
D. B. Poker
Keyword(s):  
Planar Waveguide ◽  
Ion Beam ◽  
High Energy ◽  
Optical Measurements ◽  
Optical Channel ◽  
Material System ◽  
Optical Confinement ◽  
Quantum Well Structures ◽  
Oxygen Ions ◽  
Channel Waveguides

AbstractWe have fabricated optical channel waveguides in planar GaAs/AlGaAs waveguides using 10 MeV oxygen ions at a fluence of 3x1013 and 3x1014 ions/cm2. Although disordering of GaAs/AlGaAs quantum well structures has previously been reported, to the best of the authors' knowledge the fabrication of channel waveguides using high energy oxygen bombardment has not been demonstrated in this material system. This technique may provide a totally new concept of localized material modifications in GaAs/AlGaAs waveguides by creating compositional disordered regions that act as optical confinement channels. The masking technique used to provide selective disordering of the planar waveguide structures will be presented. Optical measurements were performed on the channel waveguides at a wavelength of 1.3 μm.

Photo-Polymerized Acrylic Waveguides for Optical Interconnects

1991 ◽  
Vol 228 ◽  
Author(s):  
Robert R. Krchnavek ◽  
Gail R. Lalk ◽  
Robert Denton
Keyword(s):  
High Speed ◽  
Optical Channel ◽  
Direct Write ◽  
Material System ◽  
Direct Writing ◽  
Laser Technique ◽  
Electronic Board ◽  
Channel Waveguides ◽  
Optical Applications ◽  
Urethane Dimethacrylate

ABSTRACTWe have fabricated acrylic based optical channel waveguides using proximity photolithography as well as laser direct writing. The cladding layer is a photosensitive aliphatic urethane dimethacrylate and the guiding layer is a photosensitive aromatic acrylated epoxy. This material system provides good adhesion to a variety of substrate materials. Since both the guiding and cladding layers are applied, these materials can be employed in several electrical/optical applications including multi-chip modules using Si, SiO2, and polyimide as well as high speed electronic board technologies using teflon based substrates.Loss measurements show a guide loss of less than 0.08 dB/cm for multi-mode waveguides fabricated using the direct write laser technique. Lithographically defined guides have a loss of 0.3 dB/cm for similar size waveguides.

Ion Beam Assisted Quantum well Intermixing

1995 ◽  
Vol 396 ◽  
Author(s):  
R. D. Goldberg ◽  
I. V. Mitchell ◽  
S. Charbonneau ◽  
P. Poole ◽  
E. S. Koteles ◽  
...  
Keyword(s):  
Quantum Well ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Multiple Quantum Well ◽  
High Energy ◽  
Multiple Quantum ◽  
Active Components ◽  
Quantum Well Structures ◽  
Ion Species ◽  
Made In

AbstractSignificant progress has been made in the past year in the use of high energy (MeV) ion irradiation to tune the bandgap and therefore emission wavelengths of single and multiple quantum well structures. These shifts are attributable to compositional mixing across the well and barrier layer interfaces, a process that is driven by the vacancy flux, released during the anneal stage, from radiation defects. We present data from a series of measurements in both GaAs- and InP-based QW structures to demonstrate the importance of the implantation parameters chosen (ion species, energy, flux, fluence and implant temperature). The dramatic difference in the response of these two systems with regard to the implant depth is believed to be associated with the very different diffusivities of the Gp III site vacancies. Prospects for implementing the irradiation approach as a spatially selective, planar process in integrated optoelectronic circuitry look very attractive and are illustrated for both passive and active components by reference to recent results from tuned wavelength lasers.

Ion beam irradiated optical channel waveguides

2014 ◽  
Author(s):  
I. Bányász ◽  
I. Rajta ◽  
G. U. L. Nagy ◽  
Z. Zolnai ◽  
V. Havranek ◽  
...  
Keyword(s):  
Ion Beam ◽  
Optical Channel ◽  
Channel Waveguides

scholarly journals Fabrication of Optical Channel Waveguides in the GaAs/AlGaAs System by MeV Ion Beam Bombardment

2000 ◽  
Author(s):  
Daryush Ila ◽  
E. K. Williams ◽  
R. L. Zimmerman ◽  
P. R. Ashley ◽  
D. B. Poker
Keyword(s):  
Ion Beam ◽  
Optical Channel ◽  
Channel Waveguides

scholarly journals Mev Ion Beam Induced Index of Refraction Changes in Layered GaAs/AlGaAs Waveguides

1995 ◽  
Vol 396 ◽  
Author(s):  
T. Taylor ◽  
D. Ila ◽  
R. L. Zimmerman ◽  
P. R. Ashley ◽  
D. B. Poker
Keyword(s):  
Ion Beam ◽  
Beam Current ◽  
Electronic Energy ◽  
Index Of Refraction ◽  
Propagation Loss ◽  
Carbon Ions ◽  
Practical Applications ◽  
Oxygen Ions ◽  
Electronic Energy Transfer ◽  
Channel Waveguides

AbstractPreviously, we showed that localized optical modifications could be produced without subsequent post thermal annealing in selectively masked planar GaAs/Al 4Ga6As waveguide structures using 10 MeV oxygen ions. In our present investigation, irradiation experiments were performed on masked GaAs/Al 4Ga6As waveguide samples at 298 K using 10 MeV oxygen and 8 MeV carbon ions. The two ion incident energies were chosen to yield the maximum electronic stopping power near the interface septing the top cladding layer and the guiding layer. This localized modification process emphasizes the crucial role that the electronic energy transfer plays on the degree to which the refractive index of the guiding layer is altered. Propagation loss measurements on the fabricated channel waveguides were performed by end fire coupling a laser diode source at a wavelength of 1.3 μm. Observation of the extracted propagation loss values reveal that further optimization of the ion beam pmeters are required before practical applications can be achieved. The relative efficiency of the various ions to induce optically altered regions which serve as lateral confinement barriers of laser light shows that this fabrication process is sensitive to the ion beam current.

Optical Channel Waveguides in AlGaAs Multiple Quantum Well Structures Formed by Focused Ion Beam Induced Compositional Mixing

1992 ◽  
Vol 281 ◽  
Author(s):  
Mukesh Kumar ◽  
Gregory N. De Brabander ◽  
Peter Chen ◽  
Joseph T. Boyd ◽  
Andrew J. Steckl ◽  
...  
Keyword(s):  
Quantum Well ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Multiple Quantum Well ◽  
Propagation Loss ◽  
Optical Channel ◽  
Multiple Quantum ◽  
Mixing Depth ◽  
Quantum Well Structures ◽  
Mode Field

ABSTRACTOptical channel waveguiding in AlGaAs multiple quantum well structures formed by compositional mixing implemented by focused ion beam (FIB) implantation is demonstrated. To achieve selective mixing, Si is FIB implanted with a dose of 5×1014 cm−2 followed by RTA at 950°C for 10 s. Raman microprobe spectra are used to characterize the lateral variation of mixing. Propagation loss in a channel waveguide is measured. Measurement of the waveguide mode field distribution allows for the determination of changes in refractive index due to mixing and an approximate mixing depth.

scholarly journals Influence of the autoirradiation on nanosized gold layers formation by the ion-beam deposition

2021 ◽  
Vol 66 (2) ◽  
pp. 135-144
Author(s):  
E. N. Galenko ◽  
S. A. Sharko ◽  
N. N. Novitskii ◽  
O. I. Ivash ◽  
V. A. Ketsko
Keyword(s):  
Metal Layer ◽  
Ion Beam ◽  
High Energy ◽  
Optical Measurements ◽  
Gold Films ◽  
Ion Beam Sputtering ◽  
Ion Beam Deposition ◽  
Additional Operation ◽  
Quartz Substrates ◽  
Beam Deposition

2–13 nm gold films were obtained by the method of ion-beam sputtering on silicon and quartz substrates. It is shown that the use of an additional operation of deposition followed by the sputtering of a gold layer of 2–3 nm thickness makes it possible to reduce the electrical resistance and surface roughness of the metal films, in comparison with similar films obtained without its use. The results of measuring the temperature coefficient of resistance of nanosized gold films on silicon substrates allowed us to conclude that the films deposited become continuous at a thickness of 6-8 nm. The results of optical measurements of 10 nm gold films, obtained on quartz substrates, showed that the reflection coefficient of electromagnetic radiation at a wavelength of 850 nm is 2.8 % higher than the corresponding coefficient for the same films obtained without using this operation, and is 83 %. An important role in the formation of nanoscale gold layers is played by the processes of self-irradiation of the growing layer of the high-energy component of the gold atoms flux. When using an additional operation of deposition/sputtering, high-energy gold atoms are implanted into the substrate to a depth of about 2 nm. On the one hand, these atoms are point defects in the surface damaged layer of the substrate; on the other hand, they serve as additional centers of cluster formation. This ensures strong adhesion of the metal layer to the substrate and, therefore, the gold films become continuous and more homogeneous in microstructure. The method of ion-beam deposition can be successfully applied to obtain high-quality conductive optically transparent nanosized gold films.

The Basic Physical Principles of Ion, Electron, and X-Ray Detectors and Their Application to Microanalysis

1985 ◽  
Vol 43 ◽  
pp. 154-157
Author(s):  
A.J. Tousimis
Keyword(s):  
Ion Beam ◽  
Depth Resolution ◽  
Sample Surface ◽  
High Energy ◽  
X Rays ◽  
X Ray ◽  
Electrons And Ions ◽  
Spatial Depth ◽  
Minimum Surface Area ◽  
Physical Principles

An integral and of prime importance of any microtopography and microanalysis instrument system is its electron, x-ray and ion detector(s). The resolution and sensitivity of the electron microscope (TEM, SEM, STEM) and microanalyzers (SIMS and electron probe x-ray microanalyzers) are closely related to those of the sensing and recording devices incorporated with them.Table I lists characteristic sensitivities, minimum surface area and depth analyzed by various methods. Smaller ion, electron and x-ray beam diameters than those listed, are possible with currently available electromagnetic or electrostatic columns. Therefore, improvements in sensitivity and spatial/depth resolution of microanalysis will follow that of the detectors. In most of these methods, the sample surface is subjected to a stationary, line or raster scanning photon, electron or ion beam. The resultant radiation: photons (low energy) or high energy (x-rays), electrons and ions are detected and analyzed.

Ion Beam Mixing of Ni-Ti Bilayered Thin Films

1985 ◽  
Vol 43 ◽  
pp. 290-291
Author(s):  
A. K. Rai ◽  
R. S. Bhattacharya ◽  
M. H. Rashid
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Amorphous Alloys ◽  
Ion Beam ◽  
Ion Bombardment ◽  
High Energy ◽  
Mixing Efficiency ◽  
Ion Beam Mixing ◽  
Enhanced Diffusion ◽  
Binary Metal

Ion beam mixing has recently been found to be an effective method of producing amorphous alloys in the binary metal systems where the two original constituent metals are of different crystal structure. The mechanism of ion beam mixing are not well understood yet. Several mechanisms have been proposed to account for the observed mixing phenomena. The first mechanism is enhanced diffusion due to defects created by the incoming ions. Second is the cascade mixing mechanism for which the kinematicel collisional models exist in the literature. Third mechanism is thermal spikes. In the present work we have studied the mixing efficiency and ion beam induced amorphisation of Ni-Ti system under high energy ion bombardment and the results are compared with collisional models. We have employed plan and x-sectional veiw TEM and RBS techniques in the present work.

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