Fabrication of Undoped and N+ Microcrystalline si Films Using SiH2Ci2

1995 ◽  
Vol 377 ◽  
Author(s):  
Jae Seong Byun ◽  
Hong Bin Jeon ◽  
Jung Mok Jun ◽  
Jae Ho Yoo ◽  
Kyung Ha Lee ◽  
...  
Keyword(s):  
Band Gap ◽  
Room Temperature ◽  
Optical Band Gap ◽  
Volume Fraction ◽  
Crystalline Volume Fraction ◽  
Plasma Cvd ◽  
Conductivity Activation Energy ◽  
Temperature Conductivity ◽  
Room Temperature Conductivity ◽  
Si Films

ABSTRACTWe have studied the growth of undoped and n+ μc-Si:H (:CI) films by Remote Plasma CVD using SiH4/SiH2Cl2/H2/He mixtures. It was found that the μc-Si film can be fabricated by increasing flow rate of SiH2Cl2 and/or H2. The deposited undoped μc-Si film exhibited a maximum crystalline volume fraction of 85 %, obtained from Raman spectroscopy. The n-type μc-Si film, deposited with SiH4/SiH2Cl2/H2/PH3/He mixtures, shows a room temperature conductivity of 2 S/cm, conductivity activation energy of 29.8 meV and optical band gap of-2.0 eV. The optical band gap of n-type μc-S1 deposited using SiH2Cl2 is much higher compared to conventional μc-Si film.

Research on Nanocrystalline Silicon Film Solar Cells

2011 ◽  
Vol 347-353 ◽  
pp. 870-873
Author(s):  
Chun Rong Xue
Keyword(s):  
Grain Size ◽  
Solar Cells ◽  
Band Gap ◽  
Optical Band Gap ◽  
Volume Fraction ◽  
Silicon Film ◽  
Nanocrystalline Silicon ◽  
Processing Parameters ◽  
Crystalline Volume Fraction ◽  
Hydrogen Dilution

Nanocrystalline silicon film has become the research hit of today’ s P-V solar technology. It’s optical band gap was controlled through changing the grain size and crystalline volume fraction for the quanta dimension effect. The crystalline volume fraction in nc-Si:H is modulated by varying the hydrogen concentration in the silane plasma. Also, the crystallinity of the material increases with increasing hydrogen dilution ratio, the band tail energy width of the nc-Si:H concurrently decreases. Two sets of nc-Si:H solar cells were made with different layer thicknesss, their electronic and photonic bandgap, absorption coefficient, optical band gap, nanocrystalline grain size(D), and etc have been stuied. In addition, we discussed the relationship between the stress of nc-Si thin films and H2 ratio. At last nc-Si:H solar cells have been designed and prepared successfully in the optimized processing parameters.

Microcrystal Si Films Prepared by Remote Plasma CVD

1989 ◽  
Vol 164 ◽  
Author(s):  
Sung Chul Kim ◽  
Jung Tae Hwang ◽  
Seung Kyu Lee ◽  
Chang Young Jung ◽  
Sung Moo Soe ◽  
...  
Keyword(s):  
Rf Power ◽  
Plasma Cvd ◽  
Remote Plasma ◽  
Temperature Conductivity ◽  
Room Temperature Conductivity ◽  
Hydrogen Dilution ◽  
Power Yield ◽  
Si Films ◽  
Hydrogen Radicals ◽  
P Type

AbstractThe effects of deposition temperature, rf power and hydrogen dilution ratio on the growth, structure and transport of p-type microcrystal(μc-) Si films deposited by remote plasma CVD have been investigated. While low substrate temperature and low rf power yield small grain sizes, high temperature and high rf power tend to supress the growth of grains. The etching of Si by hydrogen radicals plays an important role to grow μc-Si, but excess etching supresses the growth of crystallites. We obtained 400 A of grain size and 3.5 S/cm of room temperature conductivity for p-type μ-Si.

Noise Spectra of Six Gey Bz:H Thermo-sensing Films for Micro-bolometers

2009 ◽  
Vol 1153 ◽  
Author(s):  
Andrey Kosarev ◽  
Ismael Cosme ◽  
Alfonso Torres
Keyword(s):  
Room Temperature ◽  
Low Frequency ◽  
Noise Spectrum ◽  
Frequency Range ◽  
Conductivity Activation Energy ◽  
Entire Frequency Range ◽  
Temperature Conductivity ◽  
Room Temperature Conductivity ◽  
Increasing Temperature ◽  
Noise Spectra

AbstractNoise spectra in plasma deposited SixGeyBz:H thermo-sensing films for micro-bolometers have been studied. The samples were characterized by SIMS (composition) and conductivity (room temperature conductivity, activation energy) measurements. The noise spectra were measured in the temperature range from T= 300 K to T=400 K and in the frequency range from f=2 Hz to f=2×104 Hz. The noise spectra SI(f) for the samples Si0.11Ge0.88:H and Si0.04Ge0.71B0.23 can be described by SI(f) ˜ f– β with β = 1 and β = 0.4, respectively. For the sample Si0.06Ge0.67B0.26 two slopes were observed: in low frequency region f≤ 103 Hz β1= 0.7 and at higher frequencies f>103 Hz β2= 0.13. Increasing temperature resulted in an increase of noise magnitude and a change of β values. The latter depended on film composition. The correlation observed between noise and conductivity activation energies suggests that noise is due to bulk rather than interface processes. Noise spectrum of the thermo-sensing film Si0.11Ge0.88:H was compared with that for micro-bolometer structure with the same thermo-sensing film. The micro-bolometer structure showed higher noise value in entire frequency range that assumed additional processes inducing noise.

scholarly journals Old Donors for New Molecular Conductors: Combining TMTSF and BEDT-TTF with Anionic (TaF6)1−x/(PF6)x Alloys

Crystals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 386
Author(s):  
Magali Allain ◽  
Cécile Mézière ◽  
Pascale Auban-Senzier ◽  
Narcis Avarvari
Keyword(s):  
Single Crystal ◽  
Room Temperature ◽  
Density Wave ◽  
Spin Density Wave ◽  
Orthorhombic Phase ◽  
Molecular Conductors ◽  
Bechgaard Salts ◽  
Temperature Conductivity ◽  
Room Temperature Conductivity ◽  
Resistivity Measurements

Tetramethyl-tetraselenafulvalene (TMTSF) and bis(ethylenedithio)-tetrathiafulvalene (BEDT-TTF) are flagship precursors in the field of molecular (super)conductors. The electrocrystallization of these donors in the presence of (n-Bu4N)TaF6 or mixtures of (n-Bu4N)TaF6 and (n-Bu4N)PF6 provided Bechgaard salts formulated as (TMTSF)2(TaF6)0.84(PF6)0.16, (TMTSF)2(TaF6)0.56(PF6)0.44, (TMTSF)2(TaF6)0.44(PF6)0.56 and (TMTSF)2(TaF6)0.12(PF6)0.88, together with the monoclinic and orthorhombic phases δm-(BEDT-TTF)2(TaF6)0.94(PF6)0.06 and δo-(BEDT-TTF)2(TaF6)0.43(PF6)0.57, respectively. The use of BEDT-TTF and a mixture of (n-Bu4N)TaF6/TaF5 afforded the 1:1 phase (BEDT-TTF)2(TaF6)2·CH2Cl2. The precise Ta/P ratio in the alloys has been determined by an accurate single crystal X-ray data analysis and was corroborated with solution 19F NMR measurements. In the previously unknown crystalline phase (BEDT-TTF)2(TaF6)2·CH2Cl2 the donors organize in dimers interacting laterally yet no organic-inorganic segregation is observed. Single crystal resistivity measurements on the TMTSF based materials show typical behavior of the Bechgaard phases with room temperature conductivity σ ≈ 100 S/cm and localization below 12 K indicative of a spin density wave transition. The orthorhombic phase δo-(BEDT-TTF)2(TaF6)0.43(PF6)0.57 is semiconducting with the room temperature conductivity estimated to be σ ≈ 0.16–0.5 S/cm while the compound (BEDT-TTF)2(TaF6)2·CH2Cl2 is also a semiconductor, yet with a much lower room temperature conductivity value of 0.001 to 0.0025 S/cm, in agreement with the +1 oxidation state and strong dimerization of the donors.

scholarly journals Synthesis and Characterization of Lithium-Ion Conductive LATP-LaPO4 Composites Using La2O3 Nano-Powder

Materials ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3502
Author(s):  
Fangzhou Song ◽  
Masayoshi Uematsu ◽  
Takeshi Yabutsuka ◽  
Takeshi Yao ◽  
Shigeomi Takai
Keyword(s):  
Room Temperature ◽  
Conduction Mechanism ◽  
Lithium Ion ◽  
X Ray Diffraction ◽  
Temperature Conductivity ◽  
Room Temperature Conductivity ◽  
X Ray ◽  
Nano Powder ◽  
Powder Addition

LATP-based composite electrolytes were prepared by sintering the mixtures of LATP precursor and La2O3 nano-powder. Powder X-ray diffraction and scanning electron microscopy suggest that La2O3 can react with LATP during sintering to form fine LaPO4 particles that are dispersed in the LATP matrix. The room temperature conductivity initially increases with La2O3 nano-powder addition showing the maximum of 0.69 mS∙cm−1 at 6 wt.%, above which, conductivity decreases with the introduction of La2O3. The activation energy of conductivity is not largely varied with the La2O3 content, suggesting that the conduction mechanism is essentially preserved despite LaPO4 dispersion. In comparison with the previously reported LATP-LLTO system, although some unidentified impurity slightly reduces the conductivity maximum, the fine dispersion of LaPO4 particles can be achieved in the LATP–La2O3 system.

Structure and Conductivity of Iodine-Doped C60 Thin Films

1994 ◽  
Vol 359 ◽  
Author(s):  
Jun Chen ◽  
Haiyan Zhang ◽  
Baoqiong Chen ◽  
Shaoqi Peng ◽  
Ning Ke ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Room Temperature ◽  
Conductivity Measurements ◽  
X Ray Diffraction ◽  
Temperature Conductivity ◽  
Room Temperature Conductivity ◽  
X Ray ◽  
Thermally Activated ◽  
Order Of Magnitude

ABSTRACTWe report here the results of our study on the properties of iodine-doped C60 thin films by IR and optical absorption, X-ray diffraction, and electrical conductivity measurements. The results show that there is no apparent structural change in the iodine-doped samples at room temperature in comparison with that of the undoped films. However, in the electrical conductivity measurements, an increase of more that one order of magnitude in the room temperature conductivity has been observed in the iodine-doped samples. In addition, while the conductivity of the undoped films shows thermally activated temperature dependence, the conductivity of the iodine-doped films was found to be constant over a fairly wide temperature range (from 20°C to 70°C) exhibiting a metallic feature.

A comparative study of Li10.35Ge1.35P1.65S12 and Li10.5Ge1.5P1.5S12 superionic conductors

2020 ◽  
Vol 13 (06) ◽  
pp. 2050031
Author(s):  
Yue Jiang ◽  
Zhiwei Hu ◽  
Ming’en Ling ◽  
Xiaohong Zhu
Keyword(s):  
Ionic Conductivity ◽  
Room Temperature ◽  
Ionic Conductivities ◽  
Lithium Ion ◽  
Lattice Parameter ◽  
Superionic Conductors ◽  
Chemical Compositions ◽  
Temperature Conductivity ◽  
Room Temperature Conductivity ◽  
Ion Conductor

Since the lithium-ion conductor Li[Formula: see text]GeP2S[Formula: see text] (LGPS) with a super high room-temperature conductivity of 12[Formula: see text]mS/cm was first reported in 2011, sulfide-type solid electrolytes have been paid much attention. It was suggested by Kwon et al. [J. Mater. Chem. A 3, 438 (2015)] that some excess lithium ions in LGPS, namely, Li[Formula: see text]Ge[Formula: see text] P[Formula: see text]S[Formula: see text], could further improve their ionic conductivities, and the highest conductivity of 14.2[Formula: see text]mS/cm was obtained at [Formula: see text] though a larger lattice parameter that occurred at [Formula: see text]. In this study, we focus on these two different chemical compositions of LGPS with [Formula: see text] and [Formula: see text], respectively. Both samples were prepared using the same experimental process. Their lattice parameter, microstructure and room-temperature ionic conductivity were compared in detail. The results show that the main phase is the tetragonal LGPS phase but with a nearly identical amount of orthorhombic LGPS phase coexisting in both samples. Bigger lattice parameters, larger grain sizes and higher ionic conductivities are simultaneously achieved in Li[Formula: see text]Ge[Formula: see text]P[Formula: see text]S[Formula: see text] ([Formula: see text]), exhibiting an ultrahigh room-temperature ionic conductivity of 18.8[Formula: see text]mS/cm.

scholarly journals Green Synthesis and Characterization of Gallium(III) Sulphide (α-Ga2S3) Nanoparicles at Room Temperature

Nano Hybrids ◽  
2014 ◽  
Vol 6 ◽  
pp. 37-46 ◽  
Author(s):  
Tansir Ahamad ◽  
Saad M. Alshehri
Keyword(s):  
Green Synthesis ◽  
Band Gap ◽  
Raman Spectra ◽  
Room Temperature ◽  
Optical Band Gap ◽  
Blue Shift ◽  
Synthesis And Characterization ◽  
Spectroscopic Techniques ◽  
Sodium Thiosulphate

Two different batches of Gallium (III) sulphide nanocrystals, (α-Ga2S3)1 and (α-Ga2S3)2 were synthesized at room temperature by the reaction of Gallium (III) chloride with sodium thiosulphate in water for 10 and 20 min respectively. The resultant nanoparticles were characterized by different spectroscopic techniques. TEM micrographs showed well-defined, close to hexagonal particles, and the lattice fringes in the HRTEM images confirmed their nanocrystalline nature. The sizes of (α-Ga2S3)1 and (α-Ga2S3)2 were 12 and 35 nm respectively with similar morphologies. Optical band gap energies (3.43 eV/3.41 eV) and photoluminescence peaks 635/641 nm (red shift) and 414/420 nm (blue shift) of the synthesized α-Ga2S3 nanocrystals suggest that they may be promising photocatalysts. Raman spectra for the α-Ga2S3, shows very sharp bands at 119, 135 and 148 cm-1 due to Ga-S2 scissoring.

Intercalation of Acceptors and Donors in Highly Ordered Graphite Fibers

1982 ◽  
Vol 20 ◽  
Author(s):  
T.C. Chieu ◽  
G. Timp ◽  
M.S. Dresselhaus
Keyword(s):  
Raman Spectroscopy ◽  
Room Temperature ◽  
Skin Depth ◽  
X Ray Diffraction ◽  
Repeat Distance ◽  
Temperature Conductivity ◽  
Room Temperature Conductivity ◽  
X Ray ◽  
Order Of Magnitude ◽  
Graphite Fibers

ABSTRACTThe intercalation of various acceptors and donors into graphite fibers, prepared from benzene-derived precursor materials is investigated by Raman spectroscopy, x-ray diffraction, electron diffraction, lattice fringing, and electrical resistivity measurements. Evidence for formation of well-staged acceptor compounds is provided by Debye-Scherrer x-ray diffraction which probes the bulk fiber and by Raman spectroscopy which probes an optical skin depth (< 0.1 μm). Lattice fringing measurements provide direct observation of large regions (up to 50 Aring; × 400 Aring;) of defectfree single-staged regions. Values for the c-axis repeat distance Ic are obtained by indexing (00l) lines of the x-ray diffraction pattern. Raman results show characteristic upshifted modes for stage 1 acceptor compounds with a sharpening in linewidth as compared to the E2g2 mode of the pristine fiber. The room temperature electrical conductivity is increased about an order of magnitude upon intercalation and exhibits a metallic dependence on temperature. The highest air-stable room temperature conductivity 1.4 × 105 (Ω-cm)−l ever reported for an intercalated fiber has been achieved.

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