Investigation on Solid Phase Crystallization of Silicon films Deposited on Different Substrates

2011 ◽  
Author(s):  
Qingdong Chen
Keyword(s):  
Solid Phase ◽  
Silicon Films ◽  
Solid Phase Crystallization

Solid-phase crystallization and dopant activation of amorphous silicon films by pulsed rapid thermal annealing

1998 ◽  
Vol 135 (1-4) ◽  
pp. 205-208 ◽  
Author(s):  
Yongqian Wang ◽  
Xianbo Liao ◽  
Zhixun Ma ◽  
Guozhen Yue ◽  
Hongwei Diao ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solid Phase ◽  
Silicon Films ◽  
Solid Phase Crystallization ◽  
Dopant Activation

Study on Solid Phase Crystallization of Silicon Films Deposited on Different Substrates

2011 ◽  
Vol 287-290 ◽  
pp. 1352-1355
Author(s):  
Qing Dong Chen ◽  
Jun Ping Wang ◽  
Yu Xiang Zhang
Keyword(s):  
Porous Silicon ◽  
Silicon Substrate ◽  
Solid Phase ◽  
Quartz Substrate ◽  
Silicon Crystal ◽  
Electrochemical Corrosion ◽  
Silicon Films ◽  
Solid Phase Crystallization ◽  
Boron Doped ◽  
Before And After

Porous silicon were prepared by electrochemical corrosion. Undoped and boron doped silicon films were deposited on quartz substrate、porous silicon and silicon substrate by PECVD,and were solid phase crystallized at different temperature and different hours. The microstructure of films before and after annealing were studied by Raman and XRD. The results show that:the crystallization of films deposited on porous silicon and monocrystalline silicon substrate are better than quartz substrate; The substrate which has silicon crystal lattice play an important role of seed crystal in the solid phase crystallization, the same grain orientation film can be grown on certain condition.

Bubbly Silicon: A New Mechanism for Solid Phase Crystallization of Amorphous Silicon

2009 ◽  
Author(s):  
Curtis Anderson ◽  
Lin Cui ◽  
Uwe Kortshagen
Keyword(s):  
Amorphous Silicon ◽  
Polycrystalline Silicon ◽  
Silicon Nanocrystals ◽  
Solid Phase ◽  
Amorphous Film ◽  
Silicon Films ◽  
Amorphous Films ◽  
Solid Phase Crystallization ◽  
Rapid Formation ◽  
Polycrystalline Silicon Films

This paper describes the rapid formation of polycrystalline silicon films through seeding with silicon nanocrystals. The incorporation of seed crystals into amorphous silicon films helps to eliminate the crystallization incubation time observed in non-seeded amorphous silicon films. Furthermore, the formation of several tens of nanometer in diameter voids is observed when cubic silicon nanocrystals with around 30 nm in size are embedded in the amorphous films. These voids move through the amorphous film with high velocity, pulling behind them a crystallized “tail.” This mechanism leads to rapid formation of polycrystalline films.

Structural Studies of Microcrystalline Silicon Films Produced by Sputtering

1984 ◽  
Vol 38 ◽  
Author(s):  
T. D. Moustakas ◽  
D. A. Weitz ◽  
E. B. Prestridge ◽  
R. Friedman
Keyword(s):  
Film Growth ◽  
Solid Phase ◽  
Rf Sputtering ◽  
Silicon Films ◽  
Microcrystalline Silicon ◽  
Solid Phase Crystallization ◽  
Columnar Growth ◽  
X Ray Scattering ◽  
Degree Of Crystallization ◽  
Degree Of Order

AbstractA number of microcrystalline silicon films have been deposited by RF sputtering and their structure was investigated by Raman spectroscopy, X-ray scattering, SEM, TEM and IR spectroscopy. The interpretation of these results suggests that the film growth proceeds initially via amorphous island formation and that the degree of crystallization of the final film depends on subsequent solid phase crystallization during the time of growth. The size and the preferred orientation of the crystallites correlates with the columnar growth habit of the films while the rest of the amorphous matrix is shown to exhibit a considerable degree of order.

Transient solid-phase crystallization study of chemically vapor-deposited amorphous silicon films byin situx-ray diffraction

1989 ◽  
Vol 40 (11) ◽  
pp. 7655-7662 ◽  
Author(s):  
R. Bisaro ◽  
J. Magariño ◽  
Y. Pastol ◽  
P. Germain ◽  
K. Zellama
Keyword(s):  
Amorphous Silicon ◽  
Solid Phase ◽  
Silicon Films ◽  
Solid Phase Crystallization ◽  
Chemically Vapor Deposited ◽  
Crystallization Study

Direct observation of ultra-rapid solid phase crystallization of amorphous silicon films irradiated by micro-thermal-plasma-jet

2021 ◽  
Vol 121 ◽  
pp. 105357
Author(s):  
Hoa Thi Khanh NGUYEN ◽  
Hiroaki Hanafusa ◽  
Yuri Mizukawa ◽  
Shohei Hayashi ◽  
Seiichiro Higashi
Keyword(s):  
Amorphous Silicon ◽  
Direct Observation ◽  
Thermal Plasma ◽  
Solid Phase ◽  
Plasma Jet ◽  
Silicon Films ◽  
Solid Phase Crystallization ◽  
Thermal Plasma Jet
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