Tisi2 Characterization of CVD-Titanium and RTP on a Cluster Platform–an Initial Investigation

1995 ◽  
Vol 387 ◽  
Author(s):  
Steven D. Marcus ◽  
Lutz Deutschmann
Keyword(s):  
Phase Formation ◽  
Chemical Vapor ◽  
Silicon Wafers ◽  
Initial Investigation ◽  
Chemical Vapor Deposited ◽  
Research Corporation ◽  
Materials Research ◽  
Cluster Tool

AbstractThe silicidation of chemical vapor deposited (CVD) titanium has been investigated utilizing the Materials Research Corporation (MRC) PHOENIX™ cluster-tool platform which incorporated an AST elektronik GmbH cluster RTP chamber. This initial investigation focuses on C49 and C54 TiSi2 phase formation on bare silicon wafers. Equipment description, process results, comparison to classical PVD Ti silicide processing and future investigations will be presented.

Suppression and characterization of interface states at low-pressure-chemical-vapor-deposited SiN /III-nitride heterostructures

2021 ◽  
Vol 542 ◽  
pp. 148530
Author(s):  
Kexin Deng ◽  
Xinhua Wang ◽  
Sen Huang ◽  
Haibo Yin ◽  
Jie Fan ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Low Pressure ◽  
Interface States ◽  
Chemical Vapor Deposited ◽  
Pressure Chemical

Characterization of chlorinated chemical vapor deposited and natural (100) diamond

1999 ◽  
Vol 425 (2-3) ◽  
pp. 245-258 ◽  
Author(s):  
J.A. Chaney ◽  
C.S. Feigerle
Keyword(s):  
Chemical Vapor ◽  
Chemical Vapor Deposited

Characterization of Low Temperature Chemical Vapor Deposited Gd2O3 Doped CeO2 Films

2011 ◽  
Vol 485 ◽  
pp. 133-136 ◽  
Author(s):  
Ryoichi Saotome ◽  
Naoki Wakiya ◽  
Takanori Kiguchi ◽  
Jeffrey S. Cross ◽  
Osamu Sakurai ◽  
...  
Keyword(s):  
Activation Energy ◽  
Vapor Deposition ◽  
Electrochemical Impedance ◽  
Pulsed Laser ◽  
Chemical Vapor ◽  
Partial Pressures ◽  
Chemical Vapor Deposited ◽  
Electrical Conductivities ◽  
Deposited Films

Highly oriented and polycrystalline Gd2O3 doped CeO2 thin films were prepared on α-Al2O3(0001) substrates by chemical vapor deposition, using Ce(C5H4C2H5)3 and Gd(C5H4C2H5)3 as precursors. The compositions of the films were controlled by optimizing the vaporization pressure of Gd precursor under the constant vaporization condition of Ce precursor. In-plane electrical conductivities of the films at various temperatures and oxygen partial pressures were evaluated by electrochemical impedance spectroscopy measurements. The activation energy of the film was determined as 0.94 eV, which is comparable with that of pulsed laser deposited films.

Characterization of reduced pressure chemical vapor deposited Si0.8Ge0.2/Si multi-layers

2013 ◽  
Vol 16 (1) ◽  
pp. 126-130 ◽  
Author(s):  
Kyu-Hwan Shim ◽  
Hyeon Deok Yang ◽  
Yeon-Ho Kil ◽  
Jong-Han Yang ◽  
Woong-Ki Hong ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Reduced Pressure ◽  
Chemical Vapor Deposited ◽  
Pressure Chemical

Fabrication and characterization of microwave-plasma-assisted chemical-vapor-deposited dielectric coatings

1991 ◽  
Author(s):  
Roger M. Wood ◽  
Adrian C. Greenham ◽  
Bruce A. Nichols ◽  
Noorallah Nourshargh ◽  
Keith L. Lewis
Keyword(s):  
Microwave Plasma ◽  
Chemical Vapor ◽  
Dielectric Coatings ◽  
Chemical Vapor Deposited ◽  
Fabrication And Characterization

Characterization of Copper Electromigration Dependence on Selective Chemical Vapor Deposited Cobalt Capping Layer Thickness

2011 ◽  
Vol 32 (4) ◽  
pp. 560-562 ◽  
Author(s):  
C.-C. Yang ◽  
F. Baumann ◽  
P.-C. Wang ◽  
SY Lee ◽  
P. Ma ◽  
...  
Keyword(s):  
Layer Thickness ◽  
Chemical Vapor ◽  
Capping Layer ◽  
Chemical Vapor Deposited ◽  
Selective Chemical
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