Examination of Interact Roughening in Ion Irradiated Cu/Nb Films by Computer Simulation and by X-Ray Diffraction

1995 ◽  
Vol 396 ◽  
Author(s):  
P.J. Partyka ◽  
R.S. Averback ◽  
I.K. Robinson ◽  
Y.S. Lee ◽  
C.P. Flynn ◽  
...  
Keyword(s):  
Computer Simulation ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Irradiation ◽  
X Ray Diffraction ◽  
State Behavior ◽  
X Ray ◽  
Monte Carlo Computer Simulation ◽  
Immiscible System ◽  
Crystal Truncation Rod ◽  
Steady State Behavior

AbstractInterfacial roughening during ion irradiation of an immiscible system is investigated by Monte Carlo computer simulation and by an x-ray diffraction technique called crystal truncation rod (CTR) analysis. In the simulations, ion flux and sample temperature are varied, and the system is allowed to evolve under irradiation until it reaches a steady state behavior. The observed behaviors are then sought experimentally in the Cu/Nb system implanted with 2 MeV Kr+ ions at different sample temperatures. Analysis of the roughness at the Cu interface is based upon the existence of a crystal truncation rod, which contains information on exactly how the crystal is terminated, or, in other words, the interfacial roughness. Rutherford backscattering spectrometry (RBS) is also used to study the intermixing of the Cu and Nb layers.

Effects of High Energy Ion Irradiation on Crystallization of Amorphous Germanium Films Deposited on Calcium Fluoride Substrates

1995 ◽  
Vol 396 ◽  
Author(s):  
Setsuo Nakao ◽  
Kazuo Saitoh ◽  
Masami Ikeyama ◽  
Hiroaki Niwa ◽  
Seita Tanemura ◽  
...  
Keyword(s):  
Thin Film ◽  
Calcium Fluoride ◽  
Structural Changes ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Irradiation ◽  
High Energy ◽  
The Other ◽  
Ion Current ◽  
X Ray Diffraction ◽  
X Ray

AbstractAmorphous (a-) Ge films were deposited on air-cleaved CaF2 (111) substrates at different deposition temperatures (Td). The films were irradiated with 0.9 MeV Ge or Si ions at low ion current intensity (1c) l00nA/cm2. Their structural changes were studied by Rutherford backscattering spectrometry (RBS) -channeling technique and thin film x-ray diffraction (XRD) measurement. It was found that the films were epitaxially crystallized by Ge and Si ion irradiation although they included randomly oriented grains. Ge ion irradiation was more effective for the crystallization than Si ion irradiation. However, the amount of the randomly oriented grains was slightly higher when using Ge ions. On the other hand, ion irradiation to the films prepared at high Td also exhibited higher incidence of randomly oriented grains.

Thermally and Ion-Induced Reactions of Metal with CuO Substrate

1988 ◽  
Vol 128 ◽  
Author(s):  
Jian Li ◽  
S. Q. Wang ◽  
J. W. Mayer
Keyword(s):  
Thermal Annealing ◽  
Vacuum Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Irradiation ◽  
Chemical Reactivity ◽  
Metal Layer ◽  
X Ray Diffraction ◽  
X Ray ◽  
Heats Of Reaction ◽  
Made In

ABSTRACTThermally and ion-induced reactions of transition metals Zr, Ti, Cr and Ag with CuO substrates have been studied by Rutherford backscattering spectrometry and X-ray diffraction techniques. Reactions resulted in the configuration of ZrO2/Cu2O/CuO from Zr/CuO structure and TiOx/Cu2O from Ti/CuO structure after thermal annealing and ion irradiation. No significant reaction has been found in Cr/CuO after vacuum annealing at 410°C and 300 Key Xe ions irradiation at 240°C. Ag atoms balled up on CuO surface after annealing at 610°C. A comparison of the reaction layers has been made in both metal/SiO2 and metal/CuO systems after thermal annealing and ion irradiation. Both heats of reaction and bond strength in the substrates can influence the chemical reactivity between metal layer and substrate.

scholarly journals MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics

2000 ◽  
Vol 5 (S1) ◽  
pp. 412-424
Author(s):  
Jung Han ◽  
Jeffrey J. Figiel ◽  
Gary A. Petersen ◽  
Samuel M. Myers ◽  
Mary H. Crawford ◽  
...  
Keyword(s):  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Optoelectronic Devices ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
Peak Energy ◽  
Movpe Growth ◽  
Pl Emission

We report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant- PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GaInN MQW heterostructures have been grown; both XRD and PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.

Uranium–molybdenum nuclear fuel plates behaviour under heavy ion irradiation: An X-ray diffraction analysis

2009 ◽  
Vol 385 (2) ◽  
pp. 449-455 ◽  
Author(s):  
H. Palancher ◽  
N. Wieschalla ◽  
P. Martin ◽  
R. Tucoulou ◽  
C. Sabathier ◽  
...  
Keyword(s):  
Diffraction Analysis ◽  
Nuclear Fuel ◽  
Ion Irradiation ◽  
Heavy Ion ◽  
X Ray Diffraction ◽  
X Ray ◽  
Heavy Ion Irradiation

Yttrium Implantation and Manganese Addition Element Effects on the High Temperature Oxidation Resistance of a Model Steel

2008 ◽  
Vol 595-598 ◽  
pp. 897-905
Author(s):  
Eric Caudron ◽  
Régis Cueff ◽  
Christophe Issartel ◽  
N. Karimi ◽  
Frédéric Riffard ◽  
...  
Keyword(s):  
Oxidation Resistance ◽  
High Temperatures ◽  
Mixed Oxides ◽  
Rutherford Backscattering Spectrometry ◽  
High Energy ◽  
X Ray Diffraction ◽  
Temperature Oxidation ◽  
X Ray ◽  
Steel Oxidation ◽  
Yttrium Implantation

Manganese addition and subsequent yttrium implantation effects on extra low carbon steel were studied by Rutherford Backscattering Spectrometry (RBS), Reflection High Energy Electron Diffraction (RHEED), X-ray Diffraction (XRD) and Glancing Angle X-ray Diffraction (GAXRD). Thermogravimetry and in situ X-Ray Diffraction at 700°C and PO2=0.04 Pa for 24h were used to determine the manganese alloying addition and subsequent yttrium implantation effects on reference steel oxidation resistance at high temperatures. This study clearly shows the combined effect of manganese alloying addition and subsequent yttrium implantation which promotes the formation of several yttrium mixed oxides seem to be responsible for the improved reference steel oxidation resistance at high temperatures.

scholarly journals COMPUTER SIMULATION OF X-RAY DIFFRACTION PROFILES AND TEM DIFFRACTION PATTERNS ON ORDERING FOR Cu-4wt%Ti ALLOY

2000 ◽  
Vol 49 (5) ◽  
pp. 926
Author(s):  
WANG LIU-DING ◽  
CHEN CHANG-LE ◽  
LIU LIN ◽  
KANG MO-KUANG ◽  
JI BANG-JIE ◽  
...  
Keyword(s):  
Computer Simulation ◽  
Ti Alloy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Diffraction Patterns
Sign in / Sign up

Export Citation Format

Share Document