FIB/SEM Dual Beam Instrumentation: Slicing, Dicing, Imaging, and More

2001 ◽  
Vol 7 (S2) ◽  
pp. 796-797
Author(s):  
Lucille A. Giannuzzi
Keyword(s):  
Metal Ion ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Time Frame ◽  
Ion Source ◽  
Beam Diameter ◽  
Dual Beam ◽  
Beam Currents

In a focused ion beam (FIB) instrument, ions (typically Ga+) obtained from a liquid metal ion source are accelerated down a column at energies up to ∽ 50 keV. The beam of ions is focused by electrostatic and octopole lens systems and the ion dose (and beam diameter) is controlled using real and/or virtual apertures. Beam sizes in FIB instruments on the order of 5-7 nm may be achieved.The versatility of the FIB instrument enables large regions of material (e.g., 500 μm3) to be removed at high beam currents in just a couple of minutes. Lower beam currents (i.e., beam diameters) are usually used to remove smaller amounts of material within the same time frame (e.g., ∽ 5μm3). The introduction of an organometallic gas in close proximity to the target allows for the deposition of metals, SiO2, and other materials, by an ion beam assisted chemical vapor deposition process.

Optimizing Gas-Assisted Processes for Ga and Xe FIB Circuit Edit Application

2016 ◽  
Author(s):  
Valery Ray ◽  
Josef V. Oboňa ◽  
Sharang Sharang ◽  
Lolita Rotkina ◽  
Eddie Chang ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Structural Damage ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Width ◽  
Ion Source ◽  
Reconstruction Technique ◽  
Beam Diameter ◽  
Current Profile ◽  
Single Beam

Abstract Despite commercial availability of a number of gas-enhanced chemical etches for faster removal of the material, there is still lack of understanding about how to take into account ion implantation and the structural damage by the primary ion beam during focused ion beam gas-assisted etching (FIB GAE). This paper describes the attempt to apply simplified beam reconstruction technique to characterize FIB GAE within single beam width and to evaluate the parameters critical for editing features with the dimensions close to the effective ion beam diameter. The approach is based on reverse-simulation methodology of ion beam current profile reconstruction. Enhancement of silicon dioxide etching with xenon difluoride precursor in xenon FIB with inductively coupled plasma ion source appears to be high and relatively uniform over the cross-section of the xenon beam, making xenon FIB potentially suitable platform for selective removal of materials in circuit edit application.

Ion Beam Imaging Methodology of Invisible Metal under Insulator Using High Energy Electron Beam Charging

2007 ◽  
Author(s):  
C.H. Wang ◽  
S.P. Chang ◽  
C.F. Chang ◽  
J.Y. Chiou
Keyword(s):  
Metal Ion ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Electrical Measurement ◽  
High Energy ◽  
Advanced Technology ◽  
High Energy Electron ◽  
Common Assumption ◽  
Dual Beam ◽  
Imaging Methodology

Abstract Focused ion beam (FIB) is a popular tool for physical failure analysis (FA), especially for circuit repair. FIB is especially useful on advanced technology where the FIB is used to modify the circuit for new layout verification or electrical measurement. The samples are prepared till inter-metal dielectric (IMD), then a hole is dug or a metal is deposited or oxide is deposited by FIB. A common assumption is made that metal under oxide can not be seen by FIB. But a metal ion image is desired for further action. Dual beam, FIB and Scanning Electron Microscope (SEM), tools have a special advantage. When switching back and forth from SEM to FIB the observation has been made that the metal lines can be imaged. The details of this technique will be discussed below.

A Compact Nuclear Microprobe With a Liquid Metal Ion Source and a Toroidal Analyzer

1992 ◽  
Vol 295 ◽  
Author(s):  
Mikio Takai ◽  
Ryou Mimura ◽  
Hiroshi Sawaragi ◽  
Ryuso Aihara
Keyword(s):  
Liquid Metal ◽  
Metal Ion ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Vacuum ◽  
Spot Size ◽  
Ion Source ◽  
Ultra High Vacuum ◽  
Atomic Resolution ◽  
Nuclear Microprobe

AbstractA nondestructive three-dimensional RBS/channeling analysis system with an atomic resolution has been designed and is being constructed in Osaka University for analysis of nanostructured surfaces and interfaces. An ultra high-vacuum sample-chamber with a threeaxis goniometer and a toroidal electrostatic analyzer for medium energy ion scattering (MEIS) was combined with a short acceleration column for a focused ion beam. A liquid metal ion source (LMIS) for light metal ions such as Li+ or Be+ was mounted on the short column.A minimum beam spot-size of about 10 nm with a current of 10 pA is estimated by optical property calculation for 200 keV Li+ LMIS. An energy resolution of 4 × 10-3 (AE/E) for the toroidal analyzer gives rise to atomic resolution in RBS spectra for Si and GaAs. This system seems feasible for atomic level analysis of localized crystalline/disorder structures and surfaces.

Ion Beam Induced Chemical Vapor Deposition of Dielectric Materials

2000 ◽  
Vol 624 ◽  
Author(s):  
H.D. Wanzenboeck ◽  
A. Lugstein ◽  
H. Langfischer ◽  
E. Bertagnolli ◽  
M. Gritsch ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Focused Ion Beam ◽  
Dielectric Material ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Dielectric Materials ◽  
Direct Writing ◽  
Scan Time

ABSTRACTDirect writing by locally induced chemical vapor deposition has been applied to direct-write tailor-made microstructures of siliconoxide for modification and repair of microelectronic circuits. Focused ion beam (FIB) tools are used for locally confined deposition of dielectric material in the deep sub-µm range. State-of-the-art procedures typically provide insufficient dielectrics with high leakage currents and low breakdown voltage. The detailed investigation of the deposition mechanisms in this study proposes an approach to significantly improve dielectric material properties. Siloxane and oxygen as volatile precursors introduced in a vacuum chamber are used to deposit siliconoxide at ambient temperatures on various substrates such as Si, GaAs, or metals. The deposition process was initiated by a focused Ga+-beam. As elementary electronic test vehicles for a systematic electrical investigation ion beam induced depositions in of capacitor architectures are applied. The chemical composition of the layers is investigated by secondary ion mass spectroscopy (SIMS) and reveals effects of atomic mixing at the interfaces. The variation of process parameters such as ion energy and ion dose, scan time and delay time lead to a better understanding of the mechanisms. The composition of the precursor gas mixture is of significant influence on insulating properties. The results demonstrate that optimized FIB-induced deposition of dielectrics offers a new window for in-situ post-processing of integrated circuits

Dy–Ni alloy metal ion source for focused ion beam implantation

Vacuum ◽  
2002 ◽  
Vol 67 (2) ◽  
pp. 249-251 ◽  
Author(s):  
A Melnikov ◽  
M Hillmann ◽  
I Kamphausen ◽  
W Oswald ◽  
P Stauche ◽  
...  
Keyword(s):  
Metal Ion ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Ni Alloy ◽  
Ion Beam Implantation ◽  
Alloy Metal
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