Selective Area Epitaxy of GaAs Optical Waveguides by Laser Assisted Chemical Vapor Deposition
Keyword(s):
ABSTRACTDirect writing of GaAs optical waveguides has been achieved by laser assisted chemical vapor deposition (LCVD). The multimode waveguides have gaussian-like cross sections, smooth surfaces, and exhibit losses as low as 5.4 dB/cm. The LCVD technique offers the capability of maskless in situ selective epitaxial growth of diverse multilayer structures, and is therefore a novel alternative for the monolithic integration of optoelectronic integrated circuits.
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2005 ◽
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1995 ◽
Vol 151
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2000 ◽
Vol 18
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pp. 648-651
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1996 ◽
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1996 ◽
Vol 35
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pp. L411-L413
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2014 ◽
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pp. 011210
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