CW Laser Induced Deep Level Defects in Virgin Silicon.
Keyword(s):
Cw Laser
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ABSTRACTDeep Level Transient Spectroscopy has been used to investigate cw laser induced defects in virgin silicon. Two main regimes have been found. In the solid phase regime, two well defined deep levels at Ec−0.19 eV and Ec−0.45 eV are observed. This point defect introduction is proposed to be involved in the degradation of ion-implanted cw laser annealed junctions. The mechanism leading to point defects generation is likely to involve trapping of in–diffused vacancies, quenched–in from the high temperature state. In the slip lines or melt regimes, additionnal deep levels are detected, which are ascribed to dislocations.
2009 ◽
Vol 615-617
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pp. 365-368
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Keyword(s):
2001 ◽
Vol 82
(1-3)
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pp. 91-94
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Keyword(s):
1992 ◽
Vol 10
(1)
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pp. 94
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Keyword(s):