Partial annealing of defects in boron-implanted p-type silicon by hydrogen implantation

2002 ◽  
Vol 719 ◽  
Author(s):  
Yutaka Tokuda ◽  
Hiroyuki Iwata
Keyword(s):  
Point Defects ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Type Silicon ◽  
Boron Implantation ◽  
Hydrogen Implantation ◽  
Transient Spectroscopy ◽  
P Type ◽  
Induced Defects ◽  
Partial Annealing

AbstractHydrogen implantation has been used to anneal defects produced in p-type silicon by boron implantation. Boron implantation is performed with an energy of 300 keV to a dose of 1×109 cm-2. Deep level transient spectroscopy measurements show the production of four hole traps (Ev + 0.21, 0.35, 0.50, 0.55 eV) by boron implantation. Subsequent hydrogen implantation is performed with energies of 60, 90, 120 and 150 keV to a dose of 2×1010 cm-2. Among four traps produced by boron implantation, the most significant effect of hydrogen implantation is observed on one trap (Ev + 0.50 eV). A 62% decrease in concentration is caused for this trap by hydrogen implantation with energies of 120 and 150 keV. This partial annealing is ascribed to the reaction of boron-implantation-induced defects with point defects produced by hydrogen implantation.

Deep level transient spectroscopy on proton-irradiated Fe-contaminated p-type silicon

2012 ◽  
Vol 9 (10-11) ◽  
pp. 1992-1995 ◽  
Author(s):  
C. K. Tang ◽  
L. Vines ◽  
B. G. Svensson ◽  
E. V. Monakhov
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Type Silicon ◽  
Transient Spectroscopy ◽  
P Type

Characterisation of the Subthreshold Damage in MeV Ion Implanted p Si

1998 ◽  
Vol 510 ◽  
Author(s):  
Shabih Fatima ◽  
Jennifer Wong-Leung ◽  
John Fitz Gerald ◽  
C. Jagadish
Keyword(s):  
Point Defects ◽  
Deep Level Transient Spectroscopy ◽  
Damage Evolution ◽  
Peak Concentration ◽  
Deep Level ◽  
Extended Defects ◽  
Transmission Electron ◽  
Transient Spectroscopy ◽  
P Type ◽  
Dlts Spectra

AbstractSubthreshold damage in p-type Si implanted and annealed at elevated temperature is characterized using deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM). P-type Si is implanted with Si, Ge and Sn with energies in the range of 4 to 8.5 MeV, doses from 7 × 1012to 1×1014cm−2and all annealed at 800°C for 15 min. For each implanted specie, DLTS spectra show a transition dose called threshold dose above which point defects transform in to extended defects. DLTS measurements have shown for the doses below threshold, a sharp peak, corresponding to the signature of point defects and for doses above threshold a broad peak indicating the presence of extended defects. This is found to be consistent with TEM analyses where no defects are seen for the doses below threshold and the presence of extended defects for the doses above threshold. This suggests a defect transformation regime where point defects present below threshold are acting like nucleating sites for the extended defects. Also the mass dependence on the damage evolution has been observed, where rod-like defects are observed in the case of Si and (rod-like defects and loops) for Ge and Sn despite the fact that peak concentration of vacancies for Ge and Sn are normalized to the peak number of vacancies for Si.

A deep-level transient spectroscopy study of p-type silicon Schottky barriers containing a Si-O superlattice

2016 ◽  
Vol 254 (4) ◽  
pp. 1600593
Author(s):  
Eddy Simoen ◽  
Suseendran Jayachandran ◽  
Annelies Delabie ◽  
Matty Caymax ◽  
Marc Heyns
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Schottky Barriers ◽  
Spectroscopy Study ◽  
Type Silicon ◽  
Transient Spectroscopy ◽  
P Type

CW Laser Induced Deep Level Defects in Virgin Silicon.

1981 ◽  
Vol 4 ◽  
Author(s):  
A. Chantre ◽  
M. Kechouane ◽  
D. Bois
Keyword(s):  
High Temperature ◽  
Point Defects ◽  
Deep Level Transient Spectroscopy ◽  
Solid Phase ◽  
Deep Level ◽  
Deep Levels ◽  
Cw Laser ◽  
Temperature State ◽  
Transient Spectroscopy ◽  
Induced Defects

ABSTRACTDeep Level Transient Spectroscopy has been used to investigate cw laser induced defects in virgin silicon. Two main regimes have been found. In the solid phase regime, two well defined deep levels at Ec−0.19 eV and Ec−0.45 eV are observed. This point defect introduction is proposed to be involved in the degradation of ion-implanted cw laser annealed junctions. The mechanism leading to point defects generation is likely to involve trapping of in–diffused vacancies, quenched–in from the high temperature state. In the slip lines or melt regimes, additionnal deep levels are detected, which are ascribed to dislocations.

Hydrogen Decoration of Vacancy Related Complexes in Hydrogen Implanted Silicon

2011 ◽  
Vol 178-179 ◽  
pp. 192-197 ◽  
Author(s):  
Helge Malmbekk ◽  
Lasse Vines ◽  
Edouard V. Monakhov ◽  
Bengt Gunnar Svensson
Keyword(s):  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Minority Carrier ◽  
Deep Level ◽  
Conduction Band Edge ◽  
Absolute Concentrations ◽  
Transient Spectroscopy ◽  
P Type ◽  
Induced Defects ◽  
Irradiation Induced Defects

Interaction between hydrogen (H) and irradiation induced defects in p-type silicon (Si) have been studied in H implanted pn-junctions, using deep level transient spectroscopy (DLTS), as well as minority carrier transient spectroscopy (MCTS). Two H related levels at Ev+0.27 eV and Ec-0.32 eV have been observed (Ev and Ec denote the valence and conduction band edge, respectively). Both levels form after a 10 min anneal at 125C, concurrent with the release of H from the boron-hydrogen (B-H) complex. The correlated formation rates and absolute concentrations of the two levels support the notion that they are due to the same defect. In addition, a level at Ec-0.45 eV is observed and discussed in terms of vacancy-hydrogen related defects.

Annealing Kinetics during Rapid and Classical Thermal Processing of Laser and Implantation Induced defects in Silicon

1986 ◽  
Vol 74 ◽  
Author(s):  
W. O. Adekoya ◽  
J. C. Muller ◽  
P. Siffert
Keyword(s):  
Deep Level ◽  
Strong Support ◽  
Furnace Annealing ◽  
Type Silicon ◽  
Defect Annealing ◽  
Thermal Mechanism ◽  
Order Of Magnitude ◽  
Transient Spectroscopy ◽  
P Type ◽  
Induced Defects

AbstractThe annealing behaviour of electrically-active defects in-duced in virgin n-type silicon by-Nd-Yag Laser (1.6 J cm−2,0.53 μm) irradiation has been investigated with Deep Level Transient Spectroscopy (DLTS). The observed defects : E(0.32 eV), E(0.45 eV) and E(0.53 eV) are characteristic of laser treated silicon, and have been reported by a number of workers. Using a rapid thermal furnace at 600°C for durations between 10 and 60s, we have observed a linear decrease in the concentration of these defects, and for times T > 60s, they are seen to disappear. A similar result was obtained in studies carried out on both vir-gin and implanted p-type silicon. This is in sharp contrast to the classical furnace annealing which requires much longer du-rations (20–30 min) at the same temperature (600 °C) in order to obtain the same results. A study of the annealing kinetics for the E(0.32 eV ;σn = 8 × 10−16 cm−2) level between 500 and 650°C in steps of 50°C for the two processes confirms this tendency for all processing temperatures, and shows a difference in ac-tivation energy of practically the same order of magnitude as the ionization energy of the defect (i.e. = 0.31 eV). Induced defects in high temperature > 1000°C in rapid thermal processed (RTA) n-type Si, also annealed out after a further 600°650 °C, 60 s RTA treatment. These results suggest that defect annealing is not a purely thermal mechanism, and lend strong support to the idea of an ionization induced enhancement.

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