The Properties of GaInAsSb/GaSb Heterostructure Grown by Mocvd and P-GaInAsSb/N-GaSb Photodiodes

ABSTRACTGaInAsSb/GaSb heterostructures have been grown by metalorganic chemical vapor deposition (MOCVD). The optical properties were characterized using low temperature(71K) photoluminescence(PL) and infrared transmission spectroscopy. The FWHM of the typical PL spectrum peaked at 2.3μm is 30meV. Hall measurement results for undoped GaInAsSb layers are presented showing a p-type background and low hole concentration of 6.5 × 1015cm−3. The room temperature performances of the p-GaInAsSb/n-GaSb photodiodes are reported. Its responsivity spectrum is peaked at 2.2 5μm and cuts off at 1.7μm in the short wavelength and at 2.4μm in the long wavelength, respectively. The room temperature detectivity D* is of 1 × 109cm.Hz1/2.W−2

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Long-wavelength strain-compensated GaAsSb quantum-well heterostructures laser grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.1615312 ◽

2003 ◽

Vol 83 (13) ◽

pp. 2530-2532 ◽

Cited By ~ 9

Author(s):

M. S. Noh ◽

R. D. Dupuis ◽

D. P. Bour ◽

G. Walter ◽

N. Holonyak

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Long Wavelength ◽

Metalorganic Chemical

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First Room-Temperature Continuous-Wave Operation of Self-Formed InGaAs Quantum Dot-Like Laser on Si substrate Grown by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.3860 ◽

2000 ◽

Vol 39 (Part 1, No. 7A) ◽

pp. 3860-3862 ◽

Cited By ~ 9

Author(s):

Zaman Iqbal Kazi ◽

Takashi Egawa ◽

Takashi Jimbo ◽

Masayoshi Umeno

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Dot ◽

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Continuous Wave ◽

Chemical Vapor ◽

Si Substrate ◽

Continuous Wave Operation ◽

Metalorganic Chemical

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Pre-Cracking and Plasma Enhanced Metalorganic Chemical Vapor Deposition Processes for Epitaxial Hg1−xCdxTe and HgTe-CdTe Superlattice Growth

MRS Proceedings ◽

10.1557/proc-102-77 ◽

1987 ◽

Vol 102 ◽

Cited By ~ 1

Author(s):

P.-Y. Lu ◽

L. M. Williams ◽

C.-H. Wang ◽

S. N. G. Chu ◽

M. H. Ross

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Infrared Transmission ◽

Chemical Vapor Deposition Growth ◽

Deposition Processes ◽

Cdznte Substrates ◽

First Time ◽

Metalorganic Chemical

ABSTRACTTwo low temperature metalorganic chemical vapor deposition growth techniques, the pre-cracking method and the plasma enhanced method, will be discussed. The pre-cracking technique enables one to grow high quality epitaxial Hg1−xCdxTe on CdTe or CdZnTe substrates at temperatures around 200–250°C. HgTe-CdTe superlattices with sharp interfaces have also been fabricated. Furthermore, for the first time, we have demonstrated that ternary Hg1−xCdTe compounds and HgTe-CdTe superlattices can be successfully grown by the plasma enhanced process at temperatures as low as 135 to 150°C. Material properties such as surface morphology, infrared transmission, Hall mobility, and interface sharpness will be presented.

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