Amorphous Silicon-Carbon alloys Deposited by Electron-Cyclotron Resonance PECVD

1996 ◽  
Vol 420 ◽  
Author(s):  
V. Chu ◽  
J. P. Conde
Keyword(s):  
Carbon Source ◽  
Amorphous Silicon ◽  
Cyclotron Resonance ◽  
Urbach Energy ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Electron Cyclotron ◽  
Ecr Plasma ◽  
Hydrogen Dilution ◽  
Silicon Carbon

AbstractHydrogenated amorphous silicon-carbon alloys are prepared using electron-cyclotron resonance (ECR) plasma-enhanced chemical-vapor deposition. Hydrogen is used as the excitation gas in the resonance chamber while silane and methane (or ethylene) are introduced in the main chamber. A minimum of 95% hydrogen dilution is used. The microwave power is kept constant at 150 W. The effect of the type of carbon source gas, silane to carbon source gas ratio, deposition pressure, substrate temperature and hydrogen dilution on the deposition rate, bandgap and Urbach energy are studied. The photoconductivity and the Urbach energy of the ECR-deposited films are compared to those prepared with glow discharge with the same bandgap.

Amorphous Silicon-Carbon Alloys and Amorphous Carbon from Direct Methane and Ethylene Activation by ECR

1997 ◽  
Vol 467 ◽  
Author(s):  
J. P. Conde ◽  
V. Chu ◽  
F. Giorgis ◽  
C. F. Pirrt ◽  
S. Arekat
Keyword(s):  
Carbon Source ◽  
Amorphous Silicon ◽  
Gas Flow ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Plasma Stream ◽  
Ecr Plasma ◽  
Silicon Carbon ◽  
Gas Flow Ratio ◽  
Hydrogenated Amorphous

ABSTRACTHydrogenated amorphous silicon-carbon alloys are prepared using electron-cyclotron resonance (ECR) plasma-enhanced chemical vapor deposition. Hydrogen is introduced into the source resonance cavity as an excitation gas. Silane is introduced in the main chamber in the vicinity of the plasma stream, whereas the carbon source gases, methane or ethylene, are introduced either with the silane or with the hydrogen as excitation gases. The effect of the type of carbon-source gas, excitation gas mixture and silane-to-carbon source gas flow ratio on the deposition rate, bandgap, subgap density of states, spin density and hydrogen evolution are studied.

Deposition of Diamond using an Electron Cyclotron Resonance Plasma System

1994 ◽  
Vol 339 ◽  
Author(s):  
Donald R. Gilbert ◽  
Rajiv Singh ◽  
W. Brock Alexander ◽  
Dong Gu Lee ◽  
Patrick Doering
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Electron Cyclotron ◽  
Plasma System ◽  
Electron Cyclotron Resonance Plasma ◽  
Ecr Plasma ◽  
Low Pressures ◽  
Substrate Temperatures ◽  
Resonance Plasma

ABSTRACTWe have used an electron cyclotron resonance plasma system to perform chemical vapor deposition experiments on single-crystal, (110) oriented diamond substrates. The depositions were carried out at 0.060 Torr using mixtures of methanol in hydrogen. Substrate temperatures were varied from approximately 620 to 800 °C The film morphology was examined using SEM and microstructural phase determination was attempted using micro-Raman spectroscopy. Based on the results of these experiments, we have determined general trends for the characteristics of films deposited on diamond from the ECR plasma at low pressures and temperatures.

Growth of Er Doped si Films by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition

1993 ◽  
Vol 301 ◽  
Author(s):  
Jim L. Rogers ◽  
Walter J. Varhue ◽  
Edward Adams
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Electron Cyclotron ◽  
Plasma Stream ◽  
Ecr Plasma ◽  
Si Films

ABSTRACTThin Si films doped with Er have been grown at low temperature by plasma enhanced chemical vapor deposition. The Er gas source is a sublimed organo-metallic compound fed into the process chamber. High doping concentrations without precipitation are possible because of the low deposition temperatures. The process relies on the beneficial effects of low energy ion bombardment to reduce the growth temperature. The ions as well as reactive chemical species are produced by an electron cyclotron resonance (ECR) plasma stream source. A hydrogen plasma stream is used to perform an in-situ pre-deposition clean to remove oxide from the Si surface. Film crystallinity and impurity concentration are determined by Rutherford backscattering spectrometry.

Silicon-Carbon Alloys Synthesized by Electron Cyclotron Resonance Chemical Vapor Deposition

2000 ◽  
Vol 609 ◽  
Author(s):  
Mark B. Moran ◽  
Linda F. Johnson
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Electron Cyclotron ◽  
Absorption Bands ◽  
Temperature Plasma ◽  
Silicon Carbon ◽  
Wide Range

ABSTRACTSilicon-carbon alloys were deposited by electron cyclotron resonance chemical vapor deposition (ECR-CVD) using either halogenated or non-halogenated precursors for the Si and C sources. Halogenated precursors were chosen for initial experiments to try to reduce the H content and to improve the microstructure of the silicon carbide (SiCx) films. While a wide range of compositions has been deposited using the halogenated precursors, only a limited range has been deposited so far with the non-halogenated precursors. Electron spectroscopy for chemical analysis (ESCA) and Fourier transform infrared (FTIR) spectroscopy show that compositions ranging from near-stoichiometric SiCx to extremely C-rich can be deposited by controlling the deposition temperature, plasma power and C/Si ratio of the halogenated precursors. At the highest C/Si-precursor ratio, the deposited film is electrically conductive with a measured resistivity of 0.067ω-cm, contains only 3-atomic-percent Si and should be considered a Si-doped carbon (C:Si) film. The excellent transparency, especially that of the C:Si films, allowed the assignment of FTIR absorption bands that are usually masked by graphitic inclusions and other impurities. A weak absorption band at 1180cm−1 was found to correlate with the electrical conductivity of the films and was attributed to the asymmetric “bond-and-a-half” Si=C stretch in a Si=C=C functional group where the pi electrons are distributed equally between the three atoms. Additional results show etching of the substrate by reactive Cl from the halogenated precursors can have a dramatic effect on the microstructure, porosity and moisture stability of the films. For experiments involving halogenated precursors, the C:Si films are much more stable than the near-stoichiometric SiCx because C:Si is deposited at lower plasma powers that do not etch the Si substrate. Finally, preliminary results show that near-stoichiometric SiCx films deposited using non-halogenated precursors are much more stable with respect to moisture incorporation than those deposited with halogenated precursors.

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