N-Type Doping by Plasma Ion Implantation Using a PH3 SDS System

1996 ◽  
Vol 438 ◽  
Author(s):  
Shu Qin ◽  
Yuanzhong Zhou ◽  
Keith Warner ◽  
Chung Chan ◽  
Jiqun Shao ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Sheet Resistance ◽  
Delivery System ◽  
Lower Pressure ◽  
Contamination Level ◽  
Si Substrate ◽  
Safe Delivery ◽  
First Time ◽  
Etching Effect

AbstractPH3 SDS (safe delivery system) gas was used for the first time in P11 doping experiments to fabricate n+p junctions and NMOS devices. Two gas recipes (PH3 diluted in H2 and He) were investigated. Under lower pressure, a minimum etching effect was observed. A 4x1015/cm2 phosphorus dose and a 22 Ω/□ sheet resistance were achieved in 4 seconds. Very low contamination level was involved. An anomalous tail of P profile in Si substrate was observed using SIMS measurements.

scholarly journals Non-viral delivery of CRISPR–Cas9 complexes for targeted gene editing via a polymer delivery system

Gene Therapy ◽  
2021 ◽  
Author(s):  
Jonathan O’Keeffe Ahern ◽  
Irene Lara-Sáez ◽  
Dezhong Zhou ◽  
Rodolfo Murillas ◽  
Jose Bonafont ◽  
...  
Keyword(s):  
Delivery System ◽  
Gene Editing ◽  
Transfection Efficiency ◽  
Attractive Alternative ◽  
Safe Delivery ◽  
Guide Rna ◽  
Recessive Dystrophic Epidermolysis Bullosa ◽  
Targeted Gene Editing ◽  
Genomic Editing ◽  
Polymeric Vectors

AbstractRecent advances in molecular biology have led to the CRISPR revolution, but the lack of an efficient and safe delivery system into cells and tissues continues to hinder clinical translation of CRISPR approaches. Polymeric vectors offer an attractive alternative to viruses as delivery vectors due to their large packaging capacity and safety profile. In this paper, we have demonstrated the potential use of a highly branched poly(β-amino ester) polymer, HPAE-EB, to enable genomic editing via CRISPRCas9-targeted genomic excision of exon 80 in the COL7A1 gene, through a dual-guide RNA sequence system. The biophysical properties of HPAE-EB were screened in a human embryonic 293 cell line (HEK293), to elucidate optimal conditions for efficient and cytocompatible delivery of a DNA construct encoding Cas9 along with two RNA guides, obtaining 15–20% target genomic excision. When translated to human recessive dystrophic epidermolysis bullosa (RDEB) keratinocytes, transfection efficiency and targeted genomic excision dropped. However, upon delivery of CRISPR–Cas9 as a ribonucleoprotein complex, targeted genomic deletion of exon 80 was increased to over 40%. Our study provides renewed perspective for the further development of polymer delivery systems for application in the gene editing field in general, and specifically for the treatment of RDEB.

Delivery of miRNA Using Fe2O3 Nanoparticles Capped Polyethyleneimine as a Nonviral Carrier

2012 ◽  
Vol 531-532 ◽  
pp. 543-546
Author(s):  
Gao Feng Liang ◽  
Ping Li ◽  
Wan Jun Lei
Keyword(s):  
Delivery System ◽  
Hepg2 Cells ◽  
Transfection Efficiency ◽  
Weight Ratio ◽  
Cationic Liposome ◽  
Expression Plasmid ◽  
Safe Delivery ◽  
Rna Interfering ◽  
Dna Complex ◽  
Gfp Tag

An efficient and safe delivery system of RNA interfering is required for clinical application of gene therapy. The study aimed to develop Fe2O3-based nanoparticles for gene delivery to overcome the disadvantages of polyethyleneimine (PEI) or cationic liposome as gene carrier including the cytotoxicity caused by positive charge and aggregation in the cells surface. PEI-capped Fe2O3 nanoparticles are successfully manufactured utilizing Fe2O3 as core, PEI as carapace, which bind miRNA at an appropriate weight ratio by electrostatic interaction and result in well-dispersed nanoparticles. The synthesized GFP tag with miR-26a expression plasmid was used for monitoring transfection efficiency in HepG2 cells. The nanocomplex exhibited higher transfection efficiency and lower cytotoxicity in HepG2 cells than the PEI/DNA complex and commercially available liposome. The delivery resulted in a significantly upregulation of miR-26a in HepG2 cells. Our results offer an alternate delivery system for RNA interfering that can be used on any gene of interest.

Direct graphene synthesis on SiO2/Si substrate by ion implantation

2013 ◽  
Vol 102 (19) ◽  
pp. 193102 ◽  
Author(s):  
R. Zhang ◽  
Z. S. Wang ◽  
Z. D. Zhang ◽  
Z. G. Dai ◽  
L. L. Wang ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Si Substrate ◽  
Graphene Synthesis

Light-emitting 9R-Si phase formed by Kr+ ion implantation into SiO2/Si substrate

2018 ◽  
Vol 113 (18) ◽  
pp. 182103 ◽  
Author(s):  
A. A. Nikolskaya ◽  
D. S. Korolev ◽  
A. N. Mikhaylov ◽  
A. I. Belov ◽  
A. A. Sushkov ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Si Substrate ◽  
Light Emitting

Silver Negative-Ion Implantation into Thermally Grown Thin SiO2Film on Si Substrate and Heat Treatment for Formation of Silver Nanoparticles

2007 ◽  
Vol 46 (9B) ◽  
pp. 6260-6266 ◽  
Author(s):  
Nobutoshi Arai ◽  
Hiroshi Tsuji ◽  
Kouichirou Adachi ◽  
Hiroshi Kotaki ◽  
Yasuhito Gotoh ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Silver Nanoparticles ◽  
Ion Implantation ◽  
Negative Ion ◽  
Si Substrate ◽  
Thermally Grown

Silicide Film Formation in the Ta/Ti/Si System by RF Induction Heating

2009 ◽  
Vol 1230 ◽  
Author(s):  
Joshua Pelleg ◽  
Shmuel Rosenberg ◽  
Misha Sinder
Keyword(s):  
Sheet Resistance ◽  
Film Formation ◽  
Analytical Form ◽  
Rf Heating ◽  
Substrate Orientation ◽  
Intermediate Phases ◽  
New Radio ◽  
Rate Of Reaction ◽  
First Time ◽  
Conductor Film

AbstractSilicidation of Ta-Ti-Si film on Si (111) and Si (100) substrates was investigated by a new radio frequency (RF) heating in order to evaluate the progress of reaction and establish whether the substrate orientation influence on the rate of reaction prevails. Substrate orientation was observed notwithstanding the high temperatures applied and the very short duration of RF. It was observed that while the reaction on Si (111) goes to completion, on Si (100) substrates under the same conditions intermediate phases remained. A qualitative analysis of the RF treatment of a conductor film on the silicon substrate is presented. It is done for the first time using the mathematical approach of the heat explosion theory. According to the analysis the specimens might experience either heating at constant temperature or by a sudden temperature increase. The relation between the parameters for the heat explosion regime is presented in simple analytical form. Measurable quantities such as sheet resistance and the magnetic field applied determine the stage of the process. The value of the resulting sheet resistance indicates whether the progress of the RF occurred by heating in the slow growth temperature regime or in the heat explosion stage where reactions of a conductor film occur within a fraction of a second.

Self-assembly of pifithrin-α-loaded layered double hydroxide/chitosan nanohybrid composites as a drug delivery system for bone repair materials

2017 ◽  
Vol 5 (12) ◽  
pp. 2245-2253 ◽  
Author(s):  
Yi-Xuan Chen ◽  
Rong Zhu ◽  
Zheng-liang Xu ◽  
Qin-Fei Ke ◽  
Chang-Qing Zhang ◽  
...  
Keyword(s):  
Drug Delivery ◽  
Drug Delivery System ◽  
Layered Double Hydroxide ◽  
Delivery System ◽  
Self Assembly ◽  
Bone Repair ◽  
Repair Materials ◽  
Double Hydroxide ◽  
First Time ◽  
Bone Repair Materials

The self-assembly of pifithrin-α-loaded layered double hydroxide/chitosan nanohybrid composites as a drug delivery system was demonstrated for the first time to improve the cytocompatibility and enhance the osteoinductivity for the treatment of bone defects.

Effects of Ion Implantation Doping on the Formation of Titanium Silicide on the Diffusion Layers

1985 ◽  
Vol 54 ◽  
Author(s):  
H. Matsui ◽  
H. Ohtsuki ◽  
M. Ino ◽  
S. Ushio
Keyword(s):  
Ion Implantation ◽  
Oxide Films ◽  
Titanium Silicide ◽  
Si Substrate ◽  
Surface Layers ◽  
Critical Dose ◽  
Diffusion Layers

ABSTRACTSi samples, with and without masking oxide films, implanted with various doses of As, P, or BF2 have been evaluated on the formation of titanium suicides from titanium films. In all cases, suicide reaction for implantation with masking oxide films is more difficult than that for implantation without masking oxide films. Suicide reaction becomes more difficult with decreasing implant energy in the range over a critical dose. In the case of implantation with masking oxide films, knocked oxygen has been found at the surface of Si substrate. Suicide formation after removing the surface layers containing considerable amount of knocked oxygen with argon back-sputtering is as easy as suicide formation for implantation without masking oxide. The difficulty of Ti silicidation for implantation with masking oxide films is believed to be due to the effects of interference from knocked oxygen.

Pattern Evolution of NiSi2 on Si Surface upon High Current Pulsed Ni Ion Implantation

2000 ◽  
Vol 648 ◽  
Author(s):  
X.Q. Cheng ◽  
H.N. Zhu ◽  
B.X. Liu
Keyword(s):  
Ion Implantation ◽  
Ion Beam ◽  
Fractal Dimensions ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Current ◽  
Si Substrate ◽  
Kinetics Of ◽  
Si Wafer

AbstractFractal pattern evolution of NiSi2 grains on a Si surface was induced by high current pulsed Ni ion implantation into Si wafer using metal vapor vacuum arc ion source. The fractal dimension of the patterns was found to correlate with the temperature rise of the Si substrate caused by the implanting Ni ion beam. With increasing of the substrate temperature, the fractal dimensions were determined to increase from less than 1.64, to beyond the percolation threshold of 1.88, and eventually up to 2.0, corresponding to a uniform layer with fine NiSi2 grains. The growth kinetics of the observed surface fractals was also discussed in terms of a special launching mechanism of the pulsed Ni ion beam into the Si substrate.

Modeling of Damage Evolution During Ion Implantation Into Silicon: A Monte Carlo Approach

1996 ◽  
Vol 439 ◽  
Author(s):  
S. Tian ◽  
M. Morris ◽  
S. J. Morris ◽  
B. Obradovic ◽  
A. F. Tasch
Keyword(s):  
Ion Implantation ◽  
Damage Evolution ◽  
Damage Model ◽  
Amorphous Layer ◽  
High Dose ◽  
Defect Production ◽  
Implantation Damage ◽  
Wide Range ◽  
Physically Based ◽  
First Time

AbstractWe present for the first time a physically based ion implantation damage model which successfully predicts both the as-implanted impurity range profiles and the damage profiles for a wide range of implant conditions for arsenic, boron, phosphorus, and BF2 implants into single-crystal (100) silicon. In addition, the amorphous layer thicknesses predicted by this damage model for high dose implants are also generally in excellent agreement with experiments. This damage model explicitly simulates the defect production and its subsequent evolution into the experimentally observable profiles for the first time. The microscopic mechanisms for damage evolution are further discussed.

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