Electrical Resistivity of Copper Films by Partially Ionized Beam Deposition

1996 ◽  
Vol 438 ◽  
Author(s):  
S. Han ◽  
K. H. Yoon ◽  
K. H. Kim ◽  
H. G. Jang ◽  
S. C. Choi ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Grain Size ◽  
Copper Films ◽  
X Ray Diffraction ◽  
Ion Energy ◽  
Xrd Pattern ◽  
Force Microscopy ◽  
Atomic Force ◽  
Cu Film ◽  
Partially Ionized

AbstractCopper films on Si(100) were prepared by partially ionized beam at 0 kV and 3 kV acceleration voltages in order to investigate effects of ion energy on electrical property with thickness. X-ray diffraction(XRD) pattern analysis was used to investigate crystallinity of the copper films, microstructure by Scanning electron microscope(SEM) and surface roughness by atomic force microscopy(AFM). The crystallinity of the copper films grown at the 3 kV was more (111) textured than that at the 0 kW. The copper films grown at the both condiitions had nearly same grain size below a thickness of 1000 Å. The 1800 Å Cu film grown at the 3 kV was 3 times rough than that at the 0 kV. The resistivity of copper films increased due to surface and grain boundary scattering, and the change of resistivity was discussed in terms of surface roughness, grain size and film density assisted by average depositing energy.

Electrical Resistivity of Copper Films by Partially Ionized Beam Deposition

1996 ◽  
Vol 439 ◽  
Author(s):  
S. Han ◽  
K. H. Yoon ◽  
K. H. Kim ◽  
H. G. Jang ◽  
S. C. Choi ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Grain Size ◽  
Copper Films ◽  
X Ray Diffraction ◽  
Ion Energy ◽  
Xrd Pattern ◽  
Force Microscopy ◽  
Atomic Force ◽  
Cu Film ◽  
Partially Ionized

AbstractCopper films on Si(100) were prepared by partially ionized beam at 0 kV and 3 kV acceleration voltages in order to investigate effects of ion energy on electrical property with thickness. X-ray diffraction(XRD) pattern analysis was used to investigate crystallinity of the copper films, microstructure by Scanning electron microscope(SEM) and surface roughness by atomic force microscopy(AFM). The crystallinity of the copper films grown at the 3 kV was more (111) textured than that at the 0 kV. The copper films grown at the both conditions had nearly same grain size below a thickness of 1000 Å. The 1800 Å Cu film grown at the 3 kV was 3 times rough than that at the 0 kV. The resistivity of copper films increased due to surface and grain boundary scattering, and the change of resistivity was discussed in terms of surface roughness, grain size and film density assisted by average depositing energy.

Deposition of Cu Films for Laser Mirror by Partially Ionized Beam Deposition

1995 ◽  
Vol 396 ◽  
Author(s):  
Seok-Keun Koh ◽  
Young-Soo Yoon ◽  
Ki-Hwan Kim ◽  
Hong-Gui Jang ◽  
Hyung-Jin Jung
Keyword(s):  
Surface Roughness ◽  
Room Temperature ◽  
Film Surface ◽  
Cu Films ◽  
Force Microscopy ◽  
Atomic Force ◽  
Cu Film ◽  
Partially Ionized ◽  
Acceleration Voltage ◽  
Beam Deposition

AbstractPartially ionized beam deposition of Cu thin films on glass at room temperature were carried out to fabricate Cu laser mirrors with good structural and reflectance properties. At a constant film thickness of 600 Å, the grain size of as-grown Cu films increased with acceleration voltage, and there was no indication of defects such as cracks and/or large pores in the film surface as shown in scanning electron microscopy images. Root-mean-square(Rms) surface roughnesses of the films with thicknesses of 600 Å were measured by atomic force microscopy. RmS surface roughness increased when acceleration voltage increased from 0 kV to 2 kV, but decreased at the acceleration voltage of 3 kV. RmS surface roughness of the film grown at 4 kV, however, increased again. At the acceleration voltage of 3 kV, reflectance of the films increased with the film thickness until 600 Å and decreased at the film thickness of 800 Å. The reflectance results showed that the Cu film deposited at 3 kV had higher reflectance than that of others. Our results suggest that it is possible to grow the Cu film with good structural and optical properties on glass substrate at room temperature by partially ionized beam deposition.

Nanocrystalline Solutions as Precursors to The Spray Deposition of Cdte Thin Films

1995 ◽  
Vol 382 ◽  
Author(s):  
Martin Pehnt ◽  
Douglas L. Schulz ◽  
Calvin J. Curtis ◽  
Helio R. Moutinho ◽  
Amy Swartzlander ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Grain Size ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Cdte Nanoparticles ◽  
Atomic Force ◽  
Vis Spectroscopy ◽  
Cdte Thin Films

ABSTRACTIn this article we report the first nanoparticle-derived route to smooth, dense, phase-pure CdTe thin films. Capped CdTe nanoparticles were prepared by injection of a mixture of Cd(CH3)2, (n-C8H17)3 PTe and (n-C8H17)3P into (n-C8H17)3PO at elevated temperatures. The resultant nanoparticles 32-45 Å in diameter were characterized by x-ray diffraction, UV-Vis spectroscopy, transmission electron microscopy, thermogravimetric analysis and energy dispersive x-ray spectroscopy. CdTe thin film deposition was accomplished by dissolving CdTe nanoparticles in butanol and then spraying the solution onto SnO2-coated glass substrates at variable susceptor temperatures. Smooth and dense CdTe thin films were obtained using growth temperatures approximately 200 °C less than conventional spray pyrolysis approaches. CdTe films were characterized by x-ray diffraction, UV-Vis spectroscopy, atomic force microscopy, and Auger electron spectroscopy. An increase in crystallinity and average grain size as determined by x-ray diffraction was noted as growth temperature was increased from 240 to 300 °C. This temperature dependence of film grain size was further confirmed by atomic force microscopy with no remnant nanocrystalline morphological features detected. UV-Vis characterization of the CdTe thin films revealed a gradual decrease of the band gap (i.e., elimination of nanocrystalline CdTe phase) as the growth temperature was increased with bulk CdTe optical properties observed for films grown at 300 °C.

Growth of (0001) ZnO Thin Films on Sapphire

1996 ◽  
Vol 449 ◽  
Author(s):  
A. J. Drehman ◽  
P. W. Yip
Keyword(s):  
Surface Roughness ◽  
Buffer Layers ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
Force Microscopy ◽  
Sapphire Substrates ◽  
Atomic Force

ABSTRACTUsing reactive rf sputtering, we have grown (0001) oriented ZnO films in situ on heated c-axis sapphire substrates, that are promising, particularly in terms of surface roughness, as buffer layers for the subsequent epitaxial growth of III-V nitride films. We compare the effects of on-axis and off-axis sputter geometries on the film epitaxy and smoothness. We also examined the effect of substrate temperature on the growth and smoothness and quality of the film. X-ray diffraction was used to verify the hexagonal ZnO phase, its c-axis orientation and, qualitatively, the degree of its epitaxy. Atomic Force Microscopy (AFM) was used to determine the ZnO growth morphology and roughness. Our best films, obtained by off-axis sputter deposition, have a surface roughness of less than 1 nm.

Grain Size Effect on Lattice of Ni Nanocrystals Prepared Through Polyol Method

2008 ◽  
Vol 8 (8) ◽  
pp. 4127-4131 ◽  
Author(s):  
G. S. Okram ◽  
Kh. Namrata Devi ◽  
H. Sanatombi ◽  
Ajay Soni ◽  
V. Ganesan ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Grain Size ◽  
Polyol Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Scanning Electron

Nanocrystalline nickel powders were prepared with grain size 'd' in the range 40–100 nm diameters through polyol method. X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM) were used for characterization. XRD of the prepared samples consistently matched with standard fcc structure of nickel without any impurity peak. Detailed analysis and calculations using Scherrer equation for (111) peak revealed systematic increase in line width and peak shifting towards lower diffraction 2θ angles with decrease in nickel to ethylene glycol mole ratio. Different values of d estimated from various peaks of each sample suggested associated microstrains in the nanograins. Values of d estimated from X-ray diffraction patterns were compared with those obtained from atomic force microscopy and scanning electron microscopy results, and discussed. Observed lattice expansion is explained, on the basis of a theoretical model of linear elasticity.

Improvement of Interface Roughness in Platinum/Carbon Multilayers for X-Ray Mirrors

2012 ◽  
Vol 523-524 ◽  
pp. 1076-1079
Author(s):  
Jang Woo Kim ◽  
Satoshi Matsuyama ◽  
Yasuhisa Sano ◽  
Kazuto Yamauchi
Keyword(s):  
Surface Roughness ◽  
Single Layer ◽  
Interface Roughness ◽  
Carbon Doping ◽  
Diffraction Spectrum ◽  
X Ray Diffraction ◽  
Sputtering Deposition ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force

We present a study of the improvement in interface roughness of platinum/carbon multilayers for X-ray mirrors. The X-ray reflectivity of multilayers strongly depends on interface quality. In an effort to reduce the interface roughness caused by crystallization during deposition, carbon doping of platinum was proposed, and its effectiveness was evaluated. We compared 45-nm-thick single-layer platinum to carbon-doped platinum films. The films were deposited on a silicon (100) substrate by dc magnetron sputtering deposition. The surface roughness and X-ray diffraction spectrum of each film were measured by atomic force microscopy and X-ray diffraction, respectively. We concluded that the increase in carbon concentration suppresses the crystallization of platinum and causes the surface roughness to decrease.

Structural, morphology and electrical properties of layered copper selenide thin film

Open Physics ◽  
2009 ◽  
Vol 7 (2) ◽  
Author(s):  
J. Ying Chyi Liew ◽  
Zainal Talib ◽  
W. Mahmood ◽  
M. Yunus ◽  
Zulkarnain Zainal ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Surface Roughness ◽  
Grain Size ◽  
Copper Selenide ◽  
Layer By Layer ◽  
Structural Morphology ◽  
Force Microscopy ◽  
Atomic Force ◽  
Average Grain Size ◽  
Evaporation Technique

AbstractThin films of copper selenide (CuSe) were physically deposited layer-by-layer up to 5 layers using thermal evaporation technique onto a glass substrate. Various film properties, including the thickness, structure, morphology, surface roughness, average grain size and electrical conductivity are studied and discussed. These properties are characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), ellipsometer and 4 point probe at room temperature. The dependence of electrical conductivity, surface roughness, and average grain size on number of layers deposited is discussed.

Microstructural features and mechanical properties of 18 MeV He+ ions irradiated pure Zr

2016 ◽  
Vol 30 (32n33) ◽  
pp. 1650395
Author(s):  
Mohsin Rafique ◽  
San Chae ◽  
Yong-Soo Kim
Keyword(s):  
Grain Size ◽  
Irradiation Dose ◽  
Dose Range ◽  
Xrd Analysis ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Pure Zirconium ◽  
Higher Doses

Samples of pure zirconium (Zr) were irradiated by 18 MeV helium (He[Formula: see text]) ions in the dose range 0.00162–0.0324 dpa at 373 K by using Cyclotron accelerator. The atomic force microscopy (AFM) results indicated an increase in average surface roughness of Zr by increasing the irradiation dose. The AFM images revealed nucleation and growth of nano- and micro-size hillocks at lower doses (0.00162–0.00324 dpa), whereas formation of a volcano-like cavities and craters was observed within these hillocks by increasing the radiation dose from 0.00324 to 0.0324 dpa. The high-resolution X-ray diffraction (XRD) results showed a variation in the intensities and positions of the diffraction peaks after the irradiation. The transmission electron microscopy (TEM) results reported a significant decrease in the grain size after the He[Formula: see text] irradiation. The values of grain size, calculated using the TEM, were found to be in good agreement with the crystallite size calculated using the XRD analysis. The yield stress (YS) was increased by increasing the irradiation dose up to 0.0162 dpa, however, the YS exhibited a decreasing trend with a further increase of the dose. The changes in YS were elucidated by grain size reduction and localized heating at higher doses.

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