Electron Beam Enhanced Precipitation in Highly Carbon Doped GaAs Layers

1996 ◽  
Vol 439 ◽  
Author(s):  
P. Werner ◽  
U. Gösele ◽  
H. Kohda
Keyword(s):  
Point Defects ◽  
Growth Direction ◽  
Precipitation Mechanism ◽  
Native Defects ◽  
Carbon Doped ◽  
Organic Vapor ◽  
Transmission Electron ◽  
Metal Organic ◽  
O 10

AbstractHighly carbon doped GaAs layers grown by metal organic vapor phase epitaxy (MOVPE) Has been investigated by transmission electron microscopy (TEM). Electron irradiation has been applied to generate point defects interacting with native defects, e.g., substitutional carbon. This irradiation induces periodically arranged striations perpendicular to the growth direction, which were observed in situ by TEM. Furthermore, precipitates (Ø= 10–15nm) were formed containing non-crystalline material, which most likely is gallium. To explain these phenomena a precipitation mechanism is proposed. It involvs small fluctuations of the incorporated C as well as the interaction of irradiation induced point defects, mainly As and C interstitials and As vacancies.

Electron Beam Enhanced Precipitation in Highly Carbon Doped GaAs Layers

1996 ◽  
Vol 438 ◽  
Author(s):  
P. Werner ◽  
U. Gösele ◽  
H. Kohda
Keyword(s):  
Point Defects ◽  
Growth Direction ◽  
Precipitation Mechanism ◽  
Native Defects ◽  
Carbon Doped ◽  
Organic Vapor ◽  
Transmission Electron ◽  
Metal Organic ◽  
O 10

AbstractHighly carbon doped GaAs layers grown by metal organic vapor phase epitaxy (MOVPE) have been investigated by transmission electron microscopy (TEM). Electron irradiation has been applied to generate point defects interacting with native defects, e.g., substitutional carbon. This irradiation induces periodically arranged striations perpendicular to the growth direction, which were observed in situ by TEM. Furthermore, precipitates (Ø= 10–15nm) were formed containing non-crystalline material, which most likely is gallium. To explain these phenomena a precipitation mechanism is proposed. It involves small fluctuations of the incorporated C as well as the interaction of irradiation induced point defects, mainly As and C interstitials and As vacancies.

AlN/GaN heterostructures grown by metal organic vapor phase epitaxy with in situ Si3N4 passivation

2011 ◽  
Vol 315 (1) ◽  
pp. 204-207 ◽  
Author(s):  
Kai Cheng ◽  
S. Degroote ◽  
M. Leys ◽  
F. Medjdoub ◽  
J. Derluyn ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic

In situ verification of single-domain III-V on Si(100) growth via metal-organic vapor phase epitaxy

2008 ◽  
Vol 93 (17) ◽  
pp. 172110 ◽  
Author(s):  
Henning Döscher ◽  
Thomas Hannappel ◽  
Bernardette Kunert ◽  
Andreas Beyer ◽  
Kerstin Volz ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Single Domain ◽  
Organic Vapor ◽  
Metal Organic ◽  
Domain Iii

Comparative Study on Reliability of InP/InGaAs Heterojunction Bipolar Transistors with Highly Zn- and C-Doped Base Layers

2009 ◽  
Vol 1195 ◽  
Author(s):  
Atsushi Koizumi ◽  
Kazuki Oshitanai ◽  
Jaesung Lee ◽  
Kazuo Uchida ◽  
Shinji Nozaki
Keyword(s):  
Raman Spectroscopy ◽  
Heterojunction Bipolar Transistors ◽  
Stress Test ◽  
Bipolar Transistors ◽  
Current Gain ◽  
Photoluminescence Intensity ◽  
Initial Current ◽  
Carbon Doped ◽  
Organic Vapor ◽  
Metal Organic

AbstractThe reliability of InP/InGaAs heterojunction bipolar transistors (HBTs) with highly carbon-doped and zinc-doped InGaAs base layers grown by metal-organic vapor phase epitaxy has been investigated. The Raman spectroscopy reveals that the post-growth annealing for the carbon-doped InGaAs base improves the crystallinity to become as good as that of the zinc-doped InGaAs base. However, the photoluminescence intensity remains lower than that of the zinc-doped InGaAs even after the post-growth annealing. The current gains of the carbon- and zinc-doped base InP/InGaAs HBTs are 63 and 75, respectively, and they are affected by the base crystallinity. After the 15-min current stress test, the current gains decreased by 40 and 3% from the initial current gains for zinc- and carbon-doped base HBTs, respectively, are observed. These results indicate that the carbon-doped base HBT is much more reliable than that of zinc-doped base HBT, though it has a lower current gain.

High-resolution transmission electron microscopy (HRTEM) observation of dislocation structures in AlN thin films

2008 ◽  
Vol 23 (8) ◽  
pp. 2188-2194 ◽  
Author(s):  
Yuki Tokumoto ◽  
Naoya Shibata ◽  
Teruyasu Mizoguchi ◽  
Masakazu Sugiyama ◽  
Yukihiro Shimogaki ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Film Growth ◽  
Threading Dislocations ◽  
Organic Vapor ◽  
Transmission Electron ◽  
Hrtem Observation ◽  
Metal Organic ◽  
Edge Dislocations

The structure and configuration of threading dislocations (TDs) in AlN films grown on (0001) sapphire by metal–organic vapor phase epitaxy (MOVPE) were characterized by high-resolution transmission electron microscopy (HRTEM). It was found that the TDs formed in the films were mainly the perfect edge dislocations with the Burgers vector of b = ⅓〈11¯20〉. The majority of the edge TDs were not randomly formed but densely arranged in lines. The arrays of the edge TDs were mainly observed on the {11¯20} and {10¯10} planes. These two planes showed different configurations of TDs. TD arrays on both of these planes constituted low-angle boundaries. We suggest that these TDs are introduced to compensate for slight misorientations between the subgrains during the film growth.

Stratified Ion Damage and in Situ Regrowth in GaAs/AlAs Heterostructures

1990 ◽  
Vol 201 ◽  
Author(s):  
A G Cullis ◽  
D J Eaglesham ◽  
D C Jacobson ◽  
J M Poate ◽  
C R Whitehouse ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Point Defects ◽  
Multilayer Structures ◽  
Dependent Manner ◽  
Characteristic Boundary ◽  
Transmission Electron ◽  
Wide Range ◽  
Ion Damage ◽  
Lattice Damage

AbstractThe material-dependent manner in which ion damage occurs in AlAs/GaAs heteroepitaxial structures is demonstrated using conventional and high resolution transmission electron microscopy. Both 150keV and 2MeV Si+ ion implants are employed over a wide range of ion doses. Under conditions which yield rapid build-up of lattice damage in GaAs, the AlAs is found to be relatively resistant to structure breakdown. Indeed, the crystalline AlAs exerts a novel protective effect on immediately adjacent regions of the GaAs layers. For high implantation doses amorphous-crystal superlattices are formed in multilayer structures. For the highest ion doses the AlAs lattice begins to be disrupted by a characteristic, boundary-dependent, heterogeneous mechanism. These observations suggest that mobile point defects play a significant role in AlAs in situ restructuring processes.

Sign in / Sign up

Export Citation Format

Share Document