Pulsed Laser Deposition of Undoped and Ag-Doped Stacked Structures of YBaCuO for Bolometer Device Applications

AbstractIn this paper we report our investigations related to the growth and characterization of superconducting stacked structures of YBaCuO(undoped)/YBaCuO(Ag-doped)/YSZ layers processed on Si(100) substrates. These films were deposited using pulsed laser deposition (PLD), and have been characterized using X-ray diffraction, scanning electron microscopy (SEM), and four probe electrical measurements. SIMS analysis has also been used to study the incorporation and diffusion of carbon in the superconducting layer. The focus of this work is on the issues of the role of silver in the superconductor, and its effects on the transport properties and microstructure of the structure. We also discuss the use of these films for bolometer device applications.

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Stability and Structural Characterization of Epitaxial NdNiO3 Films Grown by Pulsed Laser Deposition

MRS Proceedings ◽

10.1557/proc-658-gg3.27 ◽

2000 ◽

Vol 658 ◽

Cited By ~ 2

Author(s):

Trong-Duc Doan ◽

Cobey Abramowski ◽

Paul A. Salvador

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Substrate Surface ◽

Pulsed Laser ◽

Laser Deposition ◽

X Ray Diffraction ◽

Force Microscopy ◽

Atomic Force ◽

Monoclinic Distortion

ABSTRACTThin films of NdNiO3 were grown using pulsed laser deposition on single crystal substrates of [100]-oriented LaAlO3 and SrTiO3. X-ray diffraction and reflectivity, scanning electron microscopy, and atomic force microscopy were used to characterize the chemical, morphological and structural traits of the thin films. Single-phase epitaxial films are grown on LaAlO3 and SrTiO3 at 625°C in an oxygen pressure of 200 mTorr. At higher temperatures, the films partially decompose to Nd2NiO4 and NiO. The films are epitaxial with the (101) planes (orthorhombic Pnma notation) parallel to the substrate surface. Four in-plane orientational variants exist that correspond to the four 90° degenerate orientations of the film's [010] with respect to the in-plane substrate directions. Films are observed to be strained in accordance with the structural mismatch to the underlying substrate, and this leads, in the thinnest films on LaAlO3, to an apparent monoclinic distortion to the unit cell.

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Characterization of CdZnO/Si heterojunction photodiode prepared by pulsed laser deposition

International Journal of Modern Physics B ◽

10.1142/s0217979218503411 ◽

2018 ◽

Vol 32 (31) ◽

pp. 1850341 ◽

Cited By ~ 3

Author(s):

Jehan A. Saimon ◽

Suzan N. Madhat ◽

Khawla S. Khashan ◽

Azhar I. Hassan

Keyword(s):

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Electrical Measurement ◽

Laser Deposition ◽

X Ray Diffraction ◽

Increase Doping Concentration ◽

Si Substrates ◽

Current Voltage ◽

Zno Crystal

The Cd[Formula: see text]Zn[Formula: see text]O thin films have been deposited on glass and Si substrates at room-temperature with different Cd contents (x = 0, 2%, 4% and 6 wt.%) by pulsed laser deposition (PLD) technique. X-ray diffraction (XRD) analyses evidenced that the films possess polycrystalline and a hexagonal ZnO crystal structure for x = 0, 2% and 4% with a preferred orientation in the a-axis (101) direction, while films with a mixed hexagonal and cubic structure was revealed for x = 6 wt.%. Electrical measurement presented that the resistivity decreased with increased temperature and concentration of Cd. The deliberated activation energy was reduced was from 0.224 to 0.113 eV with increase doping concentration. Current–voltage (I–V) and capacitance–voltage (C–V) characteristics of the fabricated Cd[Formula: see text]Zn[Formula: see text]O/p-Si heterojunction varied with the applied bias and the Cd concentration. The results of the values of built-in potential (V[Formula: see text]) and the ideality factor (n) increased with raising Cd concentration.

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High-Tc superconducting NbN films with low particulate density grown at 25 °C using pulsed laser deposition

Journal of Materials Research ◽

10.1557/jmr.2001.0168 ◽

2001 ◽

Vol 16 (5) ◽

pp. 1223-1226 ◽

Cited By ~ 12

Author(s):

Anupama B. Kaul ◽

Timothy D. Sands ◽

Theodore Van Duzer

Keyword(s):

Pulsed Laser Deposition ◽

Power Density ◽

Electrical Transport ◽

Pulsed Laser ◽

Laser Deposition ◽

X Ray Diffraction ◽

High Tc ◽

Si Substrates ◽

High Laser

The growth and characterization of high-Tc NbN films formed on room temperature substrates by pulsed laser deposition is described. The growth was performed at a high laser power density (>5 × 108 W/cm2), where the enhanced reactivity of species in the plume is proposed as the mechanism for increased nitrogen incorporation in films on unheated substrates. The Tcs were 16.2 K on MgO and 13 K on SiNx/Si substrates. In addition to electrical transport measurements, the films were characterized using RBS and x-ray diffraction. The particulate density on films grown at high power density was significantly reduced, which is correlated with the Nb target having a smoother morphology, characteristic of a quenched molten surface layer in the ablated area.

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PREPARATION AND CHARACTERIZATION OF LaFeO3 THIN FILMS ON (100) SrTiO3 SUBSTRATES BY PULSED LASER DEPOSITION

Journal of Advanced Dielectrics ◽

10.1142/s2010135x11000379 ◽

2011 ◽

Vol 01 (03) ◽

pp. 363-367 ◽

Cited By ~ 2

Author(s):

HONG LIU ◽

JIANGUO ZHU ◽

DINGQUAN XIAO

Keyword(s):

Pulsed Laser Deposition ◽

Quantum Interference ◽

Pulsed Laser ◽

Laser Deposition ◽

X Ray Diffraction ◽

Force Microscopy ◽

Atomic Force ◽

Transmission Electron

A single-crystalline, crack-free, epitaxial (100)c LaFeO3 films were in situ grown by pulsed laser deposition on (100) SrTiO3 substrates. X-ray diffraction, atomic force microscopy and transmission electron microscopy reveal that the LaFeO3 films have high crystalline quality, a very smooth surface, and an atomically sharp LaFeO3/SrTiO3 interface. The magnetic properties of the LaFeO3 films were obtained by a superconducting quantum interference device magnetometry. The saturated magnetization and coercive field of LaFeO3 films are 14 emu/cm3 and 600 Oe, respectively.

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Lead Zirconate Titanate Films Produced by Pulsed Laser Deposition

MRS Proceedings ◽

10.1557/proc-200-115 ◽

1990 ◽

Vol 200 ◽

Cited By ~ 37

Author(s):

K. L. Saenger ◽

R. A. Roy ◽

K. F. Etzold ◽

J. J. Cuomo

Keyword(s):

Pulsed Laser Deposition ◽

Lead Zirconate Titanate ◽

Pulsed Laser ◽

Lead Zirconate ◽

Laser Deposition ◽

X Ray Diffraction ◽

Electrical Measurements ◽

Zirconate Titanate ◽

Pzt Films ◽

Before And After

ABSTRACTThe synthesis of ferroelectric lead zirconate titanate (PZT) films by pulsed laser deposition at 248 nm is described. This study has focused on producing thin (≲ 0.6μm) PZT films on bare and platinum coated MgO < 100 > substrates. Deposition was in an oxygen gas ambient (30 mTorr) at temperatures typically ∼ 525 °C. Rutherford Backscattering Spectroscopy (RBS) was used to evaluate film composition. Film lead content was found to decrease both with increasing laser fluence, and increasing substrate temperature. Film microstructure was evaluated by x-ray diffraction. Electrical measurements were made on the films before and after annealing to determine the dielectric constant and polarization. Properties after annealing were substantially improved, with dielectric permittivity values comparable to bulk PZT.

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Microstructural and Electrical Characterization of Barium Strontium Titanatebased Solid Solution Thin Films Deposited on Ceramic Substrates by Pulsed Laser Deposition

MRS Proceedings ◽

10.1557/proc-720-h2.4 ◽

2002 ◽

Vol 720 ◽

Author(s):

Costas G. Fountzoulas ◽

Daniel M. Potrepka ◽

Steven C. Tidrow

Keyword(s):

Thin Films ◽

Dielectric Constant ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Electrical Characterization ◽

Field Variable ◽

Laser Deposition ◽

X Ray Diffraction ◽

Ceramic Substrates ◽

Nominal Thickness

AbstractFerroelectrics are multicomponent materials with a wealth of interesting and useful properties, such as piezoelectricity. The dielectric constant of the BSTO ferroelectrics can be changed by applying an electric field. Variable dielectric constant results in a change in phase velocity in the device allowing it to be tuned in real time for a particular application. The microstructure of the film influences the electronic properties which in turn influences the performance of the film. Ba0.6Sr0.4Ti1-y(A 3+, B5+)yO3 thin films, of nominal thickness of 0.65 μm, were synthesized initially at substrate temperatures of 400°C, and subsequently annealed to 750°C, on LaAlO3 (100) substrates, previously coated with LaSrCoO conductive buffer layer, using the pulsed laser deposition technique. The microstructural and physical characteristics of the postannealed thin films have been studied using x-ray diffraction, scanning electron microscopy, and nano indentation and are reported. Results of capacitance measurements are used to obtain dielectric constant and tunability in the paraelectric (T>Tc) regime.

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Preparation and characterization of CuSbSe2 thin films deposited by pulsed laser deposition

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.105716 ◽

2021 ◽

Vol 127 ◽

pp. 105716

Author(s):

Tianzhen Guo ◽

Dan Wang ◽

Yajun Yang ◽

Xiaoyong Xiong ◽

Kelin Li ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition

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Processing by Pulsed Laser Deposition and Structural, Morphological and Chemical Characterization of Bi-Pb-Sr-Ca-Cu-O and Bi-Pb-Sb-Sr-Ca-Cu-O Thin Films

Advances in Science and Technology ◽

10.4028/www.scientific.net/ast.75.202 ◽

2010 ◽

Vol 75 ◽

pp. 202-207

Author(s):

Victor Ríos ◽

Elvia Díaz-Valdés ◽

Jorge Ricardo Aguilar ◽

T.G. Kryshtab ◽

Ciro Falcony

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Room Temperature ◽

Pulsed Laser ◽

Chemical Characterization ◽

Laser Deposition ◽

Nominal Composition ◽

Deposition Parameters ◽

The Relationship

Bi-Pb-Sr-Ca-Cu-O (BPSCCO) and Bi-Pb-Sb-Sr-Ca-Cu-O (BPSSCCO) thin films were grown on MgO single crystal substrates by pulsed laser deposition. The deposition was carried out at room temperature during 90 minutes. A Nd:YAG excimer laser ( = 355 nm) with a 2 J/pulse energy density operated at 30 Hz was used. The distance between the target and substrate was kept constant at 4,5 cm. Nominal composition of the targets was Bi1,6Pb0,4Sr2Ca2Cu3O and Bi1,6Pb0,4Sb0,1Sr2Ca2Cu3OSuperconducting targets were prepared following a state solid reaction. As-grown films were annealed at different conditions. As-grown and annealed films were characterized by XRD, FTIR, and SEM. The films were prepared applying an experimental design. The relationship among deposition parameters and their effect on the formation of superconducting Bi-system crystalline phases was studied.

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