Formation Of Hydrogen Molecules In Crystalline Silicon Treated With Atomic Hydrogen

1996 ◽  
Vol 442 ◽  
Author(s):  
K. Murakami ◽  
N. Fukata ◽  
S. Sasaki ◽  
K. Ishioka ◽  
K. G. Nakamura ◽  
...  

AbstractHydrogen molecules have been formed in crystalline silicon at various temperatures by a hydrogen-atom remote treatment. The Raman spectrum of the vibrational lines of hydrogen molecules in crystalline silicon is detected for silicon samples treated at temperatures between 250 and 500° C. The maximum production is obtained at 400° C. The Raman spectrum of hydrogen molecules in silicon observed at room temperature exhibits a frequency shift of around 4158 cm−1 and a very broad half-width of approximately 34 cm−1. Isotope shift also can be observed at around 2990 cm−1 in silicon treated with deuterium atoms at 400° C. The frequency shifts of the observed lines are in close agreement with those reported for molecular hydrogen and deuterium in gas, liquid, and solid phases. We discuss a model for the hydrogen molecule configuration and rule out the possibility of high-pressure hydrogen molecular gas in microvoids in crystalline silicon. These results indicate that hydrogen molecules exist at the tetrahedral interstitial sites in crystalline silicon.

2007 ◽  
Vol 131-133 ◽  
pp. 425-430 ◽  
Author(s):  
Anis M. Saad ◽  
Oleg Velichko ◽  
Yu P. Shaman ◽  
Adam Barcz ◽  
Andrzej Misiuk ◽  
...  

The silicon substrates were hydrogenated at approximately room temperature and hydrogen concentration profiles vs. depth have been measured by SIMS. Czochralski grown (CZ) wafers, both n- and p-type conductivity, were used in the experiments under consideration. For analysis of hydrogen transport processes and quasichemical reactions the model of hydrogen atoms diffusion and quasichemical reactions is proposed and the set of equations is obtained. The developed model takes into account the formation of bound hydrogen in the near surface region, hydrogen transport as a result of diffusion of hydrogen molecules 2 H , diffusion of metastable complexes * 2 H and diffusion of nonequilibrium hydrogen atoms. Interaction of 2 H with oxygen atoms and formation of immobile complexes “oxygen atom - hydrogen molecule” (O - H2 ) is also taken into account to explain the hydrogen concentration profiles in the substrates of n-type conductivity. The computer simulation based on the proposed equations has shown a good agreement of the calculated hydrogen profiles with the experimental data and has allowed receiving a value of the hydrogen molecules diffusivity at room temperature.


1978 ◽  
Vol 56 (10) ◽  
pp. 1353-1357 ◽  
Author(s):  
M. Drifford ◽  
R. Rousson ◽  
J. M. Weulersse

Raman spectra of chlorine pentafluoride have been investigated in the condensed phases between room temperature and 4 K. X-Ray and neutron diffraction patterns were also recorded. The three solid phases previously described by nmr measurements have been characterised. Solid 1(161 K < T < 181 K) is body-centered cubic with a = 5.7 Å; its Raman spectrum is quite comparable with that of the liquid. Solid II (117 K < T < 161 K) is orthorhombic with a = 6.17 Å, b = 7.22 Å; c = 7.66 Å; according to the Raman spectra its structure seems to be similar to that of solid BrF5. The structure of solid III (T < 117 K) has not been determined; however, the vibrational spectra show that it is not very different from solid II.The analogy between the structures of the tri- and pentafluorides of chlorine and bromine is discussed.


2006 ◽  
Vol 128 (23) ◽  
pp. 7456-7457 ◽  
Author(s):  
Yaodong Liu ◽  
Yi Zhang ◽  
Guozhong Wu ◽  
Jun Hu

2006 ◽  
Vol 504 (1-2) ◽  
pp. 269-273
Author(s):  
H.Y. Chan ◽  
M.P. Srinivasan ◽  
F. Benistant ◽  
K.R. Mok ◽  
Lap Chan ◽  
...  

1996 ◽  
Vol 422 ◽  
Author(s):  
H. Horiguchi ◽  
T. Kinone ◽  
R. Saito ◽  
T. Kimura ◽  
T. Ikoma

AbstractErbium films are evaporated on crystalline silicon substrates and are thermally diffused into silicon in an Ar+02 or H2 flow. Very sharp Er3+-related luminescence peaks are observed around 1.54 μ m.The main peak as well as the fine structures of the luminescence spectra depend on the annealing atmosphere, suggesting different luminescence centers. The full width at half maximum (FWHM) of the main peaks is ≤ 0.5nm at 20K. Thermal diffusion with Al films on top of the Er films is found to increase the intensity of the Er3+-related peaks greatly. The temperature dependence between 20 K and room temperature is relatively small, and a strong luminescence is obtained at room temperature.


1980 ◽  
Vol 38 (4) ◽  
pp. 333-337
Author(s):  
�. �. Shpil'rain ◽  
D. N. Kagan ◽  
L. S. Barkhatov ◽  
L. I. Zhmakin ◽  
V. V. Koroleva

1996 ◽  
Vol 452 ◽  
Author(s):  
Karen L. Moore ◽  
Leonid Tsybeskov ◽  
Philippe M. Fauchet ◽  
Dennis G. Hall

AbstractRoom-temperature photoluminescence (PL) peaking at 1.1 eV has been found in electrochemically etched mesoporous silicon annealed at 950°C. Low-temperature PL spectra clearly show a fine structure related to phonon-assisted transitions in pure crystalline silicon (c-Si) and the absence of defect-related (e.g.P-line) and impurity-related (e.g.oxygen, boron) transitions. The maximum PL external quantum efficiency (EQE) is found to be better than 0.1% with a weak temperature dependence in the region from 12K to 400K. The PL intensity is a linear function of excitation intensity up to 100 W/cm2. The PL can be suppressed by an external electric field ≥ 105 V/cm. Room temperature electroluminescence (EL) related to the c-Si band-edge is also demonstrated under an applied bias ≤ 1.2 V and with a current density ≈ 20 mA/cm2. A model is proposed in which the radiative recombination originates from recrystallized Si grains within a non-stoichiometric Si-rich silicon oxide (SRSO) matrix.


2013 ◽  
Vol 668 ◽  
pp. 870-874
Author(s):  
Heng Min Ding ◽  
Tie Qiao Zhang ◽  
Lv Chun Pu

In the paper, a model basing on solute conservative in every unit is developed for solving the solute diffusion equation during solidification. The model includes time-dependent calculations for temperature distribution, solute redistribution in the liquid and solid phases. Three-dimensional computations are performed for Al-Cu dendritic growth into an adiabatic and highly supersaturated liquid phase. A numerical algorithm was developed to explicitly track the sharp solid/liquid (S/L) interface on a fixed Cartesian grid. Three-dimensional mesoscopic calculations were performed to simulate the evolution of equiaxed dendritic morphologies.


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