Nonlinear Electrical Functions of Porous Silicon Light-Emitting Diodes

1996 ◽  
Vol 452 ◽  
Author(s):  
K. Ueno ◽  
T. Ozaki ◽  
H. Koyama ◽  
N. Koshida
Keyword(s):  
Optical Properties ◽  
Porous Silicon ◽  
Negative Resistance ◽  
Back Contact ◽  
Electrical Characteristics ◽  
Electrical Behavior ◽  
Si Substrate ◽  
Metal Insulator ◽  
Light Emitting ◽  
Au Film

AbstractSome nonlinear electrical characteristics in electroluminescent porous silicon (PS) diodes with a relatively thin PS layer (0.5–5 μm thick) are described. The experimental PS diodes were composed of a semitransparent Au film, a PS layer, p- or n-type Si substrate, and an ohmic back contact. The PS layers were prepared by anodizing Si wafers in an ethanoic HF solution. In some cases, the PS layers were treated by rapid thermal oxidization (RTO) process. When the bias voltage is applied, the PS diodes show the electrical behavior like the metal-insulator-semiconductor (MIS) diodes. The negative-resistance characteristics and memory effect are also observed. These results indicate that the quantum-structured nature of the PS layer appears not only in the optical properties but also in the electrical properties.

Porous Silicon: Microstructure, Optical Properties and Application to Light Emitting Diodes

1994 ◽  
pp. 363-392 ◽  
Author(s):  
Yoshihiko Kanemitsu ◽  
Takahiro Matsumoto ◽  
Toshiro Futagi ◽  
Hidenori Mimura
Keyword(s):  
Optical Properties ◽  
Porous Silicon ◽  
Light Emitting Diodes ◽  
Light Emitting

scholarly journals Separation of III-N partially-coalesced nanowire arrays from Si substrate

2021 ◽  
Vol 2086 (1) ◽  
pp. 012191
Author(s):  
V V Lendyashova ◽  
K P Kotlyar ◽  
V O Gridchin ◽  
R R Reznik ◽  
A I Lihachev ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Etching ◽  
Light Emitting Diodes ◽  
Single Photon ◽  
Nanowire Arrays ◽  
Si Substrate ◽  
Light Emitting ◽  
Dense Arrays ◽  
Photon Sources ◽  
Single Nanowires

Abstract In modern optoelectronics, arrays or single nanowires (NWs) of III-N materials, in particular InGaN, separated from the original substrates are used to fabricate light-emitting diodes or single photon sources. This work describes a technology of separation super-dense arrays or arrays of partially-coalesced InGaN nanowires and single nanowires from a Si substrate by chemical etching in HF:HNO3 solution, which allows preserving the optical properties of the structure for further use.

scholarly journals Plasmonic Effect on the Magneto-Optical Property of Monolayer WS2 Studied by Polarized-Raman Spectroscopy

2021 ◽  
Vol 11 (4) ◽  
pp. 1599
Author(s):  
Wuguo Liu ◽  
Zhongtao Lin ◽  
Shibing Tian ◽  
Yuan Huang ◽  
Huaqing Xue ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Raman Spectroscopy ◽  
Optical Properties ◽  
Si Substrate ◽  
Spectral Evolution ◽  
Plasmonic Effect ◽  
Au Film ◽  
Polarized Raman Spectroscopy ◽  
Raman Intensities ◽  
Polarized Raman

In recent years, the magneto-optical properties of two-dimensional transition metal disulfides have attracted more and more attention due to their further device applications in spintronics and valleytronics. However, to our knowledge, the plasmonic effect on the magneto-optical properties of WS2 has not been studied. In this work, monolayer WS2 transferred on SiO2/Si substrate and Au film were investigated respectively using polarized-Raman spectroscopy at 4 K under different magnetic fields. Prominent magnetic field–induced variations in the Raman intensities of WS2 samples were observed, which also exhibited significant differences in the spectral evolution versus magnetic field. The resonance magnetic field was 5 T and 5.5 T for the WS2 on SiO2/Si substrate and Au film, respectively. Remarkably, the magneto-optical Raman intensities of A1′  and 2LA(M) modes for WS2 on Au film were reduced to approximately 60% compared with that of WS2 on SiO2/Si. These results suggest that the plasmonic effect–induced charge transfer plays an important role in the magneto-optical Raman effect of WS2.

Negative-Resistance Effects in Light-Emitting Porous Silicon Diodes

1998 ◽  
Vol 37 (Part 1, No. 3B) ◽  
pp. 1096-1099 ◽  
Author(s):  
Koki Ueno ◽  
Nobuyoshi Koshida
Keyword(s):  
Porous Silicon ◽  
Negative Resistance ◽  
Light Emitting

Negative-Resistance Effects in Light-Emitting Porous Silicon Diodes

1997 ◽  
Author(s):  
Koki Ueno ◽  
Hideki Koyama ◽  
Nobuyoshi Koshida
Keyword(s):  
Porous Silicon ◽  
Negative Resistance ◽  
Light Emitting

Optical properties of light-emitting porous silicon

2006 ◽  
Author(s):  
Fengcheng Teng ◽  
Shuxin Qiao ◽  
Yanan Cai ◽  
Zhiquan Li
Keyword(s):  
Optical Properties ◽  
Porous Silicon ◽  
Light Emitting

New Results on Electroluminescence from Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
Peter Steiner ◽  
Frank Kozlowski ◽  
Hermann Sandmaier ◽  
Walter Lang
Keyword(s):  
Porous Silicon ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Green Light ◽  
Light Emitting ◽  
Porous Region ◽  
First Results

ABSTRACTFirst results on light emitting diodes in porous silicon were reported in 1991. They showed a quantum efficiency of 10-7 to 10-5 and an orange spectrum. Over the last year some progress was achieved:- By applying UV-light during the etching blue and green light emitting diodes in porous silicon are fabricated.- When a p/n junction is realized within the porous region, a quantum efficiency of 10-4 is obtained.

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