The Doping and Characterization of Erbium-Implanted Gan

1997 ◽  
Vol 482 ◽  
Author(s):  
J. T. Torvik ◽  
R. J. Feuerstein ◽  
C. H. Qiu ◽  
J. I. Pankove ◽  
F. Namavar
Keyword(s):  
Room Temperature ◽  
Impact Excitation ◽  
Electron Impact Excitation ◽  
Device Performance ◽  
Hot Electron ◽  
Electron Hole ◽  
Excitation Process ◽  
Electron Hole Pair ◽  
Single Exponential

AbstractStrong room temperature Er-related photoluminescence (PL) and electroluminescence (EL) at 1539 nm was observed from Er and 0 implanted n-type GaN. Good device performance requires that the Er-related excitation and emission processes be efficient. Single exponential PL and EL time decays with l/e lifetimes of 2.33 ms and 1.74 ms indicates highly efficient radiative process. The Er excitation process in GaN was studied by comparing the efficiency of direct Erabsorption, electron-hole pair recombination, and hot electron (impact) excitation. The strongest Er luminescence and the lowest pump power was found using impact excitation.

CMOS compatible Si/SiO2 multilayers for Light Emitting Diodes

2000 ◽  
Vol 638 ◽  
Author(s):  
Z. Gaburro ◽  
L. Pavesi ◽  
G. Pucker ◽  
P. Bellutti
Keyword(s):  
Quantum Confinement ◽  
Room Temperature ◽  
Blackbody Radiation ◽  
Single Type ◽  
Hot Electron ◽  
Electron Hole ◽  
Light Emitting ◽  
Electron Relaxation ◽  
Electron Hole Pair ◽  
Plasmon Polaritons

AbstractWe report photoluminescence and electroluminescence at room temperature in diodes based on Si/SiO2 multilayers. The multilayers are fabricated by alternating Si and SiO2 layers, whose thickness is, respectively, 2 and 5 nanometers. In photoluminescence, a single band is observed, centered at 800 nm, which is due to electron-hole pair recombination under quantum confinement. On the other hand, in electroluminescence, two bands are reported. The first band is in the infrared spectrum, and is blackbody radiation. The second band is visible, and is originated by relaxation of a single type of electrical carrier (electrons), as suggested by a fast decay time (less than 0.1 µs). Possible mechanisms can be hot-electron relaxation or coupling with surface plasmon-polaritons.

Investigation of the Temperature Degradation and Re-Activation of the Luminescent Centres in Rare Earth Implanted SiO2 Layers

2007 ◽  
Vol 131-133 ◽  
pp. 595-600
Author(s):  
S. Prucnal ◽  
L. Rebohle ◽  
Wolfgang Skorupa
Keyword(s):  
Rare Earth ◽  
Light Emitting Diode ◽  
Operating Time ◽  
Impact Excitation ◽  
Electron Impact Excitation ◽  
Hot Electron ◽  
Light Emitting ◽  
Hot Electron Injection ◽  
Quenching Process ◽  
Quenching Mechanisms

The temperature quenching mechanisms of the electroluminescence (EL) and the reactivation of the rare earth luminescent centres by the flash lamp annealing (FLA) made after hot electron injection into the SiO2 layer implanted by Tb and Gd was investigated. An increase of the temperature from room temperature up to 150oC reduces the gate voltage of about 3 V and increases the rate of the EL quenching process and the degradation of the Metal-Oxide-Silicon Light Emitting Diode (MOSLED) structure by a of factor of three. On the other hand, the post-injection FLA reactivates the RE centres switched off by electrons trapped around them during hot electron impact excitation, increasing the operating time of the MOSLEDs devices.

Preparation and Characterization of Ag/TiO2-xNx Nanoparticles

2007 ◽  
Vol 534-536 ◽  
pp. 105-108
Author(s):  
Zhong Qing Liu ◽  
Zheng Hua Li ◽  
Yan Ping Zhou ◽  
Chang Chun Ge
Keyword(s):  
Methylene Blue ◽  
Photocatalytic Activity ◽  
Visible Light ◽  
Ultraviolet Light ◽  
Hole Pair ◽  
Electron Hole ◽  
Photoexcited Electron ◽  
Photochemical Deposition ◽  
Electron Hole Pair

The Ag/TiO2-xNx nanoparticles were synthesized by photochemical deposition with irradiation of visible light in a TiO2-XNX suspension system. The prepared products were characterized by means of XRD, Uv-vis, and FEM. Its photocatalytic activity was investigated by the decomposition of methylene blue (MB) solution under illumination of visible and ultraviolet light, respectively. Compared to TiO2-xNx, the photocatalytic activity of as–prepared Ag/TiO2-xNx is obviously enhanced due to the decreasing recombination of a photoexcited electron-hole pair. The mechanism in which photocatalytic activity is enhanced is discussed in detail.

scholarly journals Synthesis and Characterization of Amorphous Molybdenum Sulfide (MoSx)/CdIn2S4 Composite Photocatalyst: Co-Catalyst Using in the Hydrogen Evolution Reaction

Catalysts ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1455
Author(s):  
Qi Li ◽  
Wanli Liu ◽  
Xuejian Xie ◽  
Xianglong Yang ◽  
Xiufang Chen ◽  
...  
Keyword(s):  
Hydrogen Production ◽  
Separation Efficiency ◽  
Photogenerated Electron ◽  
Molybdenum Sulfide ◽  
Electron Hole ◽  
Composite Photocatalyst ◽  
Co Catalyst ◽  
Pair Separation ◽  
Electron Hole Pair

Co-catalyst deposition is used to improve the surface and electrical properties of photocatalysts. In this work, MoSx/CdIn2S4 nanocomposites were prepared by a facile hydrothermal and photodeposition route. The basic crystalline phases and morphology of the as-prepared samples were determined, and these results showed that MoSx was tightly anchored onto CdIn2S4 by sharing the same S atom. In the hydrogen production experiments, MoSx/CdIn2S4-40 displayed the optimal photocatalytic hydrogen production yield in 4 h. The H2 evolution rate reached 2846.73 μmol/g/h, which was 13.6-times higher than that of pure CdIn2S4. Analyzing the photocatalytic enhancement mechanisms revealed that this unique structure had a remarkable photogenerated electron-hole pair separation efficiency, rapid charge carrier transfer channels, and more abundant surface reaction sites. The use of co-catalyst (MoSx) greatly improved the photocatalytic activity of CdIn2S4.

A Hot Electron–Hole Pair Breaks the Symmetry of a Semiconductor Quantum Dot

Nano Letters ◽  
2013 ◽  
Vol 13 (12) ◽  
pp. 6091-6097 ◽  
Author(s):  
M. Tuan Trinh ◽  
Matthew Y. Sfeir ◽  
Joshua J. Choi ◽  
Jonathan S. Owen ◽  
Xiaoyang Zhu
Keyword(s):  
Quantum Dot ◽  
Hole Pair ◽  
Hot Electron ◽  
Electron Hole ◽  
Semiconductor Quantum Dot ◽  
Electron Hole Pair

Hydrogen Collision Model of The Staebler-Wronski Effect: Microscopics and Kinetics

1998 ◽  
Vol 507 ◽  
Author(s):  
Howard M. Branz
Keyword(s):  
Room Temperature ◽  
Pair Creation ◽  
Hole Pair ◽  
Dangling Bond ◽  
Electron Hole ◽  
Spin Resonance ◽  
Electron Hole Pair ◽  
Staebler Wronski Effect ◽  
Hydrogenated Amorphous ◽  
Creation Rate

ABSTRACTA new microscopic and kinetic model of light-induced metastability in hydrogenated amorphous silicon (a-Si:H) is described. Recombination and trapping of photoinduced carriers excite hydrogen from deep Si-H bonds into a mobile configuration, leaving a dangling bond (DB) defect at the site of excitation. Normally, mobile H are recaptured at DB defects and no metastability or net DB production results. However, when two mobile H collide, they form a metastable two-hydrogen complex and leave two spatially-uncorrelated Staebler-Wronski DBs. Thermal and light-induced annealing occur when mobile H are excited from the metastable two-H complex; they diffuse and are recaptured to DBs. The microscopic model is entirely compatible with electron-spin-resonance results showing neither DB-DB nor DB-H spatial correlation of the light-induced DBs. The model leads to new differential equations describing the evolution of the mobile H and DB densities. These equation equations explain the observed room-temperature Ndb∼G2/3t1/3 dependence of DB creation upon the electron-hole pair creation rate (G) and time. The model also accounts for both t1/3-kinetics at 4.2K and t1/2-kinetics under laser-pulse soaking. Neither of these results can be explained within the prevailing electron-hole pair recombination model.

Polarization and anisotropic emission of K-shell radiation from heavy few electron ions1This article is part of a Special Issue on the 10th International Colloquium on Atomic Spectra and Oscillator Strengths for Astrophysical and Laboratory Plasmas.

2011 ◽  
Vol 89 (5) ◽  
pp. 513-519 ◽  
Author(s):  
D.B. Thorn ◽  
A. Gumberidze ◽  
S. Trotsenko ◽  
D. Banaś ◽  
H. Beyer ◽  
...  
Keyword(s):  
Oscillator Strengths ◽  
Impact Excitation ◽  
Electron Impact Excitation ◽  
Excitation Process ◽  
International Colloquium ◽  
X Ray ◽  
Uranium Ions ◽  
Gas Target ◽  
Laboratory Plasmas ◽  
Gas Targets

The population of magnetic sublevels in hydrogen-like uranium ions has been investigated in relativistic ion–atom collisions by observing the subsequent X-ray emission. Using the gas target at the experimental storage ring facility we observed the angular emission of Lyman-α radiation from hydrogen-like uranium ions. The alignment parameter for three different interaction energies was measured and found to agree well with theory. In addition, the use of different gas targets allowed for the electron-impact excitation process to be observed.

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