CMOS compatible Si/SiO2 multilayers for Light Emitting Diodes

2000 ◽  
Vol 638 ◽  
Author(s):  
Z. Gaburro ◽  
L. Pavesi ◽  
G. Pucker ◽  
P. Bellutti
Keyword(s):  
Quantum Confinement ◽  
Room Temperature ◽  
Blackbody Radiation ◽  
Single Type ◽  
Hot Electron ◽  
Electron Hole ◽  
Light Emitting ◽  
Electron Relaxation ◽  
Electron Hole Pair ◽  
Plasmon Polaritons

AbstractWe report photoluminescence and electroluminescence at room temperature in diodes based on Si/SiO2 multilayers. The multilayers are fabricated by alternating Si and SiO2 layers, whose thickness is, respectively, 2 and 5 nanometers. In photoluminescence, a single band is observed, centered at 800 nm, which is due to electron-hole pair recombination under quantum confinement. On the other hand, in electroluminescence, two bands are reported. The first band is in the infrared spectrum, and is blackbody radiation. The second band is visible, and is originated by relaxation of a single type of electrical carrier (electrons), as suggested by a fast decay time (less than 0.1 µs). Possible mechanisms can be hot-electron relaxation or coupling with surface plasmon-polaritons.

The Doping and Characterization of Erbium-Implanted Gan

1997 ◽  
Vol 482 ◽  
Author(s):  
J. T. Torvik ◽  
R. J. Feuerstein ◽  
C. H. Qiu ◽  
J. I. Pankove ◽  
F. Namavar
Keyword(s):  
Room Temperature ◽  
Impact Excitation ◽  
Electron Impact Excitation ◽  
Device Performance ◽  
Hot Electron ◽  
Electron Hole ◽  
Excitation Process ◽  
Electron Hole Pair ◽  
Single Exponential

AbstractStrong room temperature Er-related photoluminescence (PL) and electroluminescence (EL) at 1539 nm was observed from Er and 0 implanted n-type GaN. Good device performance requires that the Er-related excitation and emission processes be efficient. Single exponential PL and EL time decays with l/e lifetimes of 2.33 ms and 1.74 ms indicates highly efficient radiative process. The Er excitation process in GaN was studied by comparing the efficiency of direct Erabsorption, electron-hole pair recombination, and hot electron (impact) excitation. The strongest Er luminescence and the lowest pump power was found using impact excitation.

A Hot Electron–Hole Pair Breaks the Symmetry of a Semiconductor Quantum Dot

Nano Letters ◽  
2013 ◽  
Vol 13 (12) ◽  
pp. 6091-6097 ◽  
Author(s):  
M. Tuan Trinh ◽  
Matthew Y. Sfeir ◽  
Joshua J. Choi ◽  
Jonathan S. Owen ◽  
Xiaoyang Zhu
Keyword(s):  
Quantum Dot ◽  
Hole Pair ◽  
Hot Electron ◽  
Electron Hole ◽  
Semiconductor Quantum Dot ◽  
Electron Hole Pair

QUANTUM CONFINEMENT AND COULOMB EFFECTS IN SEMICONDUCTOR QUANTUM DOTS

1990 ◽  
Vol 04 (16) ◽  
pp. 1009-1016 ◽  
Author(s):  
Y.Z. HU ◽  
S.W. KOCH ◽  
D.B. TRAN THOAI
Keyword(s):  
Quantum Dots ◽  
Optical Absorption ◽  
Absorption Spectra ◽  
Quantum Confinement ◽  
Semiconductor Quantum Dots ◽  
Optical Absorption Spectra ◽  
Electron Hole ◽  
Quantum Confinement Effects ◽  
Electron Hole Pair ◽  
Coulomb Effects

Coulomb and quantum confinement effects in small semiconductor microcrystallites are analyzed. Energies and wavefunctions for one- and two-electron-hole-pair states are computed and optical absorption spectra are evaluated.

Hydrogen Collision Model of The Staebler-Wronski Effect: Microscopics and Kinetics

1998 ◽  
Vol 507 ◽  
Author(s):  
Howard M. Branz
Keyword(s):  
Room Temperature ◽  
Pair Creation ◽  
Hole Pair ◽  
Dangling Bond ◽  
Electron Hole ◽  
Spin Resonance ◽  
Electron Hole Pair ◽  
Staebler Wronski Effect ◽  
Hydrogenated Amorphous ◽  
Creation Rate

ABSTRACTA new microscopic and kinetic model of light-induced metastability in hydrogenated amorphous silicon (a-Si:H) is described. Recombination and trapping of photoinduced carriers excite hydrogen from deep Si-H bonds into a mobile configuration, leaving a dangling bond (DB) defect at the site of excitation. Normally, mobile H are recaptured at DB defects and no metastability or net DB production results. However, when two mobile H collide, they form a metastable two-hydrogen complex and leave two spatially-uncorrelated Staebler-Wronski DBs. Thermal and light-induced annealing occur when mobile H are excited from the metastable two-H complex; they diffuse and are recaptured to DBs. The microscopic model is entirely compatible with electron-spin-resonance results showing neither DB-DB nor DB-H spatial correlation of the light-induced DBs. The model leads to new differential equations describing the evolution of the mobile H and DB densities. These equation equations explain the observed room-temperature Ndb∼G2/3t1/3 dependence of DB creation upon the electron-hole pair creation rate (G) and time. The model also accounts for both t1/3-kinetics at 4.2K and t1/2-kinetics under laser-pulse soaking. Neither of these results can be explained within the prevailing electron-hole pair recombination model.

Optical Studies of Electroluminescent Structures from Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
J. F. Harvey ◽  
R. A. Lux ◽  
D. C. Morton ◽  
G. F. McLane ◽  
R. Tsu
Keyword(s):  
Porous Silicon ◽  
Quantum Confinement ◽  
Room Temperature ◽  
Light Emitting Diode ◽  
Spectral Peak ◽  
Electrical Excitation ◽  
Silicon Structure ◽  
Electrical Measurements ◽  
Optical Studies ◽  
Light Emitting

ABSTRACTTwo components of the electroluminescence (EL) from porous silicon light emitting diode (LED) devices have been observed. A slower component and a faster component have been identified. The slower component has a spectral peak shifted to the red from the corresponding photoluminescence (PL) spectrum. The faster component has a spectral peak well in the infrared (IR). Optical and electrical measurements of these two components are discussed. The temperature dependence of the two EL components are presented and contrasted. Our measurements demonstrate that the two EL components and the PL result from recombination in different parts of the porous silicon structure. As the temperature is reduced below room temperature the slower EL exhibits a decrease in intensity at relatively high temperatures, suggesting a freeze out of electrical carriers due to quantum confinement, resulting in a much reduced electrical excitation of the EL.

Nanocrystalline SnO2 Particles and Twofold-coordinated Sn Defect Centers in Sol-gel-derived SnO2–SiO2 Glasses

2002 ◽  
Vol 17 (6) ◽  
pp. 1305-1311 ◽  
Author(s):  
Tomokatsu Hayakawa ◽  
Takehiro Enomoto ◽  
Masayuki Nogami
Keyword(s):  
Quantum Confinement ◽  
Sol Gel ◽  
Glass Ceramics ◽  
Stannic Oxide ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
Electron Hole ◽  
X Ray ◽  
Absorption Edge Shift ◽  
Electron Hole Pair

Semiconductive nanocrystals of stannic oxide (SnO2) were precipitated in silica (SiO2) glasses synthesized via a sol-gel route. Kayanuma's equation, which describes the quantum confinement of an electron–hole pair in a semiconductive particle, well explained the absorption-edge shift due to the SnO2 nanocrystals in the optical absorption spectra. The adequate anneal of the SnO2–SiO2 glass ceramics in H2 gas led to the decomposition of the SnO2 nanocrystals and concurrently the production of twofold-coordinated tin atoms (Sn20 ) that provided a violet photoluminescence. The thermal behavior was studied with the x-ray diffraction measurement and photoluminescence and photoluminescence excitation spectroscopy.

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