X-Ray Photoemission Spectromicroscopy Of Gan And AIGan

ABSTRACTWe investigate here for the first time GaN and AIGaN films by using x-ray photoemission spectromicroscopy. As compared to conventional x-ray photoemission spectroscopy (XPS), spectromicroscopy can provide spatially resolved information on the chemical composition of the sample surface. The experimental results where obtained by using MAXIMUM, a scanning photoemission microscope installed on 12.0 undulator beamline at the Advanced Light Source (ALS), Berkelely, allowing for a spatial resolution of 100 nm. We investigate here GaN and AlGaN thin films grown on sapphire substrate by metalorganic chemical vapor deposition (MOCVD). The results clearly indicate the great potential of spectromicroscopy in investigating chemical inhomogeneity, inpurities and localization in GaN and AlGaN thin films.

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Growth of Epitaxial BaTiO3 Thin Films at 600°C by Metalorganic Chemical Vapor Deposition

MRS Proceedings ◽

10.1557/proc-361-355 ◽

1994 ◽

Vol 361 ◽

Cited By ~ 6

Author(s):

D.L. Kaiser ◽

M.D. Vaudin ◽

L.D. Rotter ◽

Z.L. Wang ◽

J.P. Cline ◽

...

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Electron Diffraction ◽

Harmonic Generation ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Second Harmonic ◽

Chemical Vapor ◽

X Ray ◽

Metalorganic Chemical

ABSTRACTMetalorganic chemical vapor deposition (MOCVD) was used to deposit epitaxial BaTiO3 thin films on (100) MgO substrates at 600°C. The metalorganic precursors employed in the deposition experiments were hydrated Ba(thd)2 (thd = C11H19O2) and titanium isopropoxide. The films were analyzed by means of transmittance spectroscopy, wavelength dispersive x-ray spectrometry, secondary ion mass spectrometry depth profiling, x-ray diffraction, high resolution transmission electron microscopy, selected area electron diffraction, nanoscale energy dispersive x-ray spectrometry and second harmonic generation measurements. There was no evidence for interdiffusion between the film and substrate. The x-ray and electron diffraction studies showed that the films were oriented with the a-axis normal to the substrate surface, whereas second harmonic generation measurements showed that the films had some c-axis character.

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Characterization of Epitaxial Pb(Zrx,Ti1-x)O3 Thin Films with Composition Near the Morphotropic Phase Boundary

MRS Proceedings ◽

10.1557/proc-748-u13.4 ◽

2002 ◽

Vol 748 ◽

Cited By ~ 6

Author(s):

Keisuke Saito ◽

Toshiyuki Kurosawa ◽

Takao Akai ◽

Shintaro Yokoyama ◽

Hitoshi Morioka ◽

...

Keyword(s):

Thin Films ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Composition Range ◽

Chemical Vapor ◽

X Ray Diffraction ◽

Reciprocal Space Mapping ◽

Pzt Thin Films ◽

X Ray

ABSTRACT200-nm-thick Pb(Zrx,Ti1-x)O3 (PZT) thin films with zirconium composition in the range from 0% to 65% were epitaxially grown on (001)c SrRuO3 (SRO)//SrTiO3 (STO) single crystal substrates by pulsed metalorganic chemical vapor deposition (pulsed MOCVD). Constituent crystallographic phases were characterized by high-resolution X-ray diffraction reciprocal space mapping. It was found that PZT thin films having zirconium composition from 45% to 60% show mixed tetragonal and pseudocubic phases and their lattice parameters remained constant in this composition range.

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Plasma-Enhanced Metalorganic Chemical Vapor deposition of Lipon Thin Films

MRS Proceedings ◽

10.1557/opl.2011.702 ◽

2011 ◽

Vol 1313 ◽

Author(s):

Lamartine Meda

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Ionic Conductivity ◽

Vapor Deposition ◽

Photoelectron Spectroscopy ◽

Metalorganic Chemical Vapor Deposition ◽

Electrochemical Impedance ◽

Chemical Vapor ◽

X Ray ◽

Metalorganic Chemical

ABSTRACTLithium phosphorus oxynitride (Lipon) thin films have been deposited by a plasmaenhanced metalorganic chemical vapor deposition (PE-MOCVD) method using triethyl phosphate [(CH2CH3)3PO4] and lithium tert-butoxide [(LiOC(CH3)3] precursors. Growth rates were between 100 and 415 Å/min, and thicknesses ranged from 1 to 2.5 μm. X-ray powder diffraction showed that the films were amorphous, and X-ray photoelectron spectroscopy revealed approximately 6.9 at.% carbon in the films. The ionic conductivity of Lipon was measured using electrochemical impedance spectroscopy (EIS) and approximately 1.02 μS/cm was obtained, which is consistent with the ionic conductivity of Lipon deposited by radio frequency magnetron sputtering of Li3PO4 targets. An all-solid-state thin-film lithium microbattery such as Li/Lipon/LiCoO2/Au/substrate was successfully fabricated with Lipon deposited by PE-MOCVD. The battery has a capacity of ca. 22 μAh/cm2μm.

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Газофазный синтез нового функционального гибридного материала на основе многостенных углеродных нанотрубок, декорированных ограненными нанокристаллами алюминия

Письма в журнал технической физики ◽

10.21883/pjtf.2018.19.46679.17429 ◽

2018 ◽

Vol 44 (19) ◽

pp. 24

Author(s):

К.В. Кремлев ◽

А.М. Объедков ◽

Н.М. Семенов ◽

Б.С. Каверин ◽

С.Ю. Кетков ◽

...

Keyword(s):

Electron Microscopy ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Multiwalled Carbon ◽

X Ray ◽

Hybrid Nanomaterial ◽

Transmission Electron ◽

Aluminum Nanocrystals ◽

First Time

AbstractThe deposition of polyhedral aluminum nanocrystals onto the surface of multiwalled carbon nanotubes (MWCNTs) via metalorganic chemical vapor deposition with the use of triisobutylaluminum as the precursor has been performed for the first time. The new hybrid nanomaterial (Al/MWCNTs) has been characterized by X-ray phase analysis, scanning electron microscopy, and high-resolution transmission electron microscopy. The obtained Al/MWCNTs hybrid materials were tested as the filler for the creation of threedimensional composites on the basis of an AMg2 alloy via powder metallurgy. It has been shown that the use of Al/MWCNTs as the filler increases the hardness of the composites by 18% in comparison with the initial MWCNTs.

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Observation of Domain Switching in Fatigued Epitaxial Pb(Zr,Ti)O3 Thin Films

MRS Proceedings ◽

10.1557/proc-0902-t10-67 ◽

2005 ◽

Vol 902 ◽

Author(s):

Yong Kwan Kim ◽

Shintaro Yokoyama ◽

Risako Ueno ◽

Hitoshi Morioka ◽

Osami Sakata ◽

...

Keyword(s):

Thin Films ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Remanent Polarization ◽

Domain Switching ◽

Fatigue Behavior ◽

Chemical Vapor ◽

X Ray Diffraction ◽

Film Capacitor ◽

X Ray

AbstractWe performed x-ray diffraction measurements by using highly brilliant synchrotron radiation on epitaxial Pb(Zr0.35Ti0.65)O3 film capacitor structures. Small regions of 300-nm-thick epitaxial Pb(Zr,Ti)O3 thin films with Pt and SrRuO3 top electrodes were measured after applying various numbers of switching cycles of the electric field. Epitaxial Pb(Zr,Ti)O3 thin films were prepared on epitaxial (100)cSrRuO3/(100)SrTiO3 substrates by pulsed-metalorganic chemical vapor deposition. The volume faction of c-domain and remanent polarization was plotted against the number of switching cycles. In the both capacitors, the Vc increased as the switching cycle increased independent of fatigue behavior.

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Effects of thermal annealing on the texture of La0.67Sr0.33MnO3 thin films

Journal of Materials Research ◽

10.1557/jmr.2001.0258 ◽

2001 ◽

Vol 16 (7) ◽

pp. 1887-1889 ◽

Cited By ~ 1

Author(s):

Lamartine Meda ◽

LaQuita Kennon ◽

Cristiane Bacaltchuk ◽

Hamid Garmestani ◽

Klaus H. Dahmen

Keyword(s):

Thin Films ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Face Centered Cubic ◽

X Ray Diffraction ◽

X Ray ◽

Simple Cubic ◽

Heat Treated ◽

Face Centered

Thin films of La0.67Sr0.33MnO3 (LSMO) were prepared at 670 °C on LaAlO3 (LAO) and SrTiO3 (STO) substrates by liquid-delivery metalorganic chemical vapor deposition. X-ray diffraction analysis 2¸/¸ and pole figure scans showed that the films are epitaxial with (001)LSMO//(001)LAO and (001)LSMO//(001)STO. The crystal structure of LSMO/LAO was indexed as face-centered cubic with a double cell and LSMO/STO as simple cubic. Electron microscopy revealed square facets and elongated grain features. Films heat-treated between 700 and 800 °C on LAO resulted in a structural change, while those on STO showed an increase in texture.

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Chemical vapor deposition of superconducting Bi-Sr-Ca-Cu-O films using fluorocarbon-based precursors

Journal of Materials Research ◽

10.1557/jmr.1990.0001 ◽

1990 ◽

Vol 5 (1) ◽

pp. 1-4 ◽

Cited By ~ 26

Author(s):

Masanori Nemoto ◽

Mitsugu Yamanaka

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Diffraction Data ◽

Vapor Deposition ◽

Substrate Surface ◽

Chemical Vapor ◽

X Ray Diffraction ◽

X Ray ◽

Resistivity Measurements ◽

First Time

Superconducting Bi-Sr-Ca-Cu-O thin films have been prepared for the first time by chemical vapor deposition using triphenyl bismuth and fluorocarbon-based chelates such as bis(hexafluoroacetylacetonate)strontium, bis(hexafluoroacetylacetonate)calcium, and bis(hexafluoroacetylacetonate)copper. After annealing in air, x-ray diffraction data reveal that the films deposited on (001) SrTiO3 substrates have preferential orientation of their crystalline c-axis perpendicular to the substrate surface. Four-probe resistivity measurements reveal the onset of superconductivity at 80 K and zero resistivity at 50 K.

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Substrate Dependent Texture and Heteroepitaxy for Group IIIA Nitride Films by the X-Ray Precession Method

MRS Proceedings ◽

10.1557/proc-208-357 ◽

1990 ◽

Vol 208 ◽

Cited By ~ 2

Author(s):

T. J. Kistenmacher ◽

W. A. Bryden ◽

D. K. Wickenden ◽

S. A. Ecelberger

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Heteroepitaxial Growth ◽

X Ray ◽

Fused Quartz ◽

Metalorganic Chemical

ABSTRACTThe X-ray precession method has been utilized to study texture and heteroepitaxy for thin films of the Group IIIA nitrides deposited on a variety of amorphous and single-crystal substrates. Films of InN were synthesized by reactive rfmagnetron sputtering [employing an elemental target and N2 as the sputtering gas], while the GaN films were deposited by metalorganic chemical vapor deposition [utilizing (CH 3 ) 3Ga and NH3 as sources]. The quality of (00.1) textured films of InN on fused quartz and slightly off-axis (111) Si are taken as initial examples of the versatility of the X-ray precession method. The powder rings evolving from a lack of azimuthal coherence for InN films grown on quartz are contrasted with the scattering from weakly correlated (pseudo heteroepitaxial) domains for films grown on (111) Si. These latter scattering features are then compared with those from the true heteroepitaxial deposition of InN onto the (111) face of cubic ZrO2. And, finally, the scattering from the heteroepitaxial growth of InN and GaN on the (00.1) face of sapphire and some initial studies on the effect of nucleation layers on twinning in the GaN films are presented.

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An Environmentally Clean Liquid Precursor of Sulfur for Metalorganic Chemical Vapor Deposition (MOCVD) of Transition Metal Di-Sulfide Thin Films.

MRS Proceedings ◽

10.1557/proc-344-247 ◽

1994 ◽

Vol 344 ◽

Author(s):

Prasad N. Gadgil

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Photoelectron Spectroscopy ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Iron Pentacarbonyl ◽

Sulfur Source ◽

X Ray ◽

Metalorganic Chemical

AbstractA three member ring compound propylene sulfide, C3H6S is employed as a sulfur source for the Metalorganic Chemical Vapor Deposition (MOCVD) of stoichiometric thin films of iron pyrite (FeS2). Iron pentacarbonyl Fe(CO)5, a liquid, was precursor for iron. Propylene sulfide, (PS) a liquid ( b. p. = 72–75 °C, v. p. ∼ 87 torr @ 20°C ) decomposes cleanly and quantitatively as S2 and C3H6 (propylene) above 250°C. Deposition of thin films of pyrite and their analysis by X-ray diffraction and Mossbauer and X-ray Photoelectron spectroscopy is described. Liquid state, long term stability, clean and low temperature generation of active S2 species in vapor phase and gaseous by product C3H6 which can be burned to CO2 and H2O are the key advantages offered by propylene sulfide as a sulfur source.

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