Epitaxial and Conductive RuO2 Thin Films Grown on MgO and LaAlO3 by MOCVD

1998 ◽  
Vol 541 ◽  
Author(s):  
P. Lu ◽  
S. He ◽  
F. X. Li ◽  
Q. X. Jia
Keyword(s):  
Thin Films ◽  
Orientation Relationship ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Microstructural Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Different Temperatures ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractConductive RuO2 thin films have been grown epitaxially on (100) MgO and (100) LaAlO3 substrates by metal-organic chemical vapor deposition(MOCVD) at different temperatures. The microstructural properties of the RuO2 films have been studied using x-ray diffraction and scanning electron microscopy. Different growth and microstructure properties were observed for the films deposited on the two substrates. The films on MgO are epitaxial at deposition temperatures as low as 350°C, and consist of two variants with an orientation relationship given by (110) RuO2 /(100) MgO and [001] RuO2//[011]MgO. The films on LaAlO3, on the other hand, are epitaxial only at deposition temperatures of 600°C and above, and contain four variants with an orientation relationship given by (200)RuO2//(100)LaAlO3 and [011] RuO2//[011] LaAlO3. The observed microstructures of epitaxially grown films can be explained based on geometric considerations for the films and substrates.

X-ray Diffraction Study of InGaN/GaN Superlattice Implanted with Eu3+ Ions

2009 ◽  
Vol 1202 ◽  
Author(s):  
Mohammad Ahmad Ebdah ◽  
Martin E. Kordesch ◽  
Andre Anders ◽  
Wojciech M. Jadwisienczak
Keyword(s):  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
Gradual Improvement ◽  
X Ray ◽  
Different Temperatures ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Ion Implanted

AbstractIn this work, europium implanted InGaN/GaN SL with a fixed well/barrier thickness ratio grown by metal-organic chemical-vapor deposition (MOCVD) on GaN/(0001) sapphire substrate were investigated. The as-grown and Eu ion implanted InGaN/GaN SLs were annealed at different temperatures ranging from 600°C to 950°C in nitrogen ambient. The quality of the SL interfaces in undoped and implanted structures has been investigated by X-ray diffraction (XRD) at room temperature. The characteristic satellite peaks of SLs were measured for the (0002) reflection up to the second order in the symmetric Bragg geometry. The XRD simulation spectrum of the as-grown SL agrees well with the experimental results. The simulation results show x=0.06 atomic percent the InGaN well sub-layers, with thicknesses of 2.4 and 3.3 nm for single InGaN well and GaN barrier, respectively. It was observed that annealing of the undoped SL does not significantly affect the interfacial quality of the superstructure, whereas, the Eu ion implanted InGaN/GaN SL undergo partial induced degradation. Annealing the implanted SLs shows a gradual improvement of the multilayer periodicity and a reduction of the induced degradation with increasing the annealing temperature as indicated by the XRD spectra.

Deposition of Superconducting Tl-Ba-Ca-Cu-O Phases on Metal Foils by Metal-Organic Chemical Vapor Deposition

1992 ◽  
Vol 275 ◽  
Author(s):  
D. L. Schulzi ◽  
B. Hano ◽  
D. Neumayer ◽  
B. J. Hinds ◽  
T. J. Markst ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
X Ray ◽  
Metal Foils ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTThe synthesis of superconducting Tl-Ba-Ca-Cu-O thin films on metal foils (Au and Ag) by metal-organic chemical vapor deposition (MOCVD) has been investigated. Ba-Ca-Cu-O-(F) films are first prepared via MOCVD using fluorinated “second generation” metal-organic precursors. After an intermediate anneal with water vapor-saturated oxygen to promote removal of F, Tl is introduced by annealing in the presence of a mixture of oxides (Tl2O3, BaO, CaO, CuO) of a specific composition. Characterization of the thin films by scanning electron microscopy, EDX, x-ray diffraction, and variable temperature magnetization measurements has been carried out. High temperature superconductor (HTS) films of Tl2Ba2Ca1Cu2O8−x on Au foil exhibit a magnetically derived Tc = 80K and a high degree of texturing with the crystallite c-axes oriented perpendicular to the substrate surface as evidenced by enhanced (000 x-ray diffraction reflections. Thin film coverage on Ag foil becomes non-contiguous during the (Tl2O3, BaO, CaO, CuO) mixture anneal.

scholarly journals Properties and Orientation of Antiferroelectric Lead Zirconate Thin Films Grown by MOCVD

1998 ◽  
Vol 541 ◽  
Author(s):  
Nan Chen ◽  
G. R. Bai ◽  
O. Auciello ◽  
R. E. Koritala ◽  
M. T. Lanagan
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Lead Zirconate ◽  
Dielectric Constants ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Antiferroelectric Phase ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractSingle-phase polycrystalline PbZrO3 (PZ) thin films, 3000-6000 A thick, have been grown by metal-organic chemical vapor deposition (MOCVD) on (111)Pt/Ti/SiO2/Si substrates at ≍525°C. X-ray diffraction analysis indicated that the PZ films grown on (111)Pt/Ti/SiO2/Si (Pt/Tgi/Si) showed preferred pseudocubic (110) orientation. In contrast, PZ films grown on 150 A thick PbTiO3 (PT) template layers exhibited a pseudocubic (100) preferred orientation, and PZ films deposited on TiO2 template layers consisted of randomly oriented grains. The PZ films grown on Pt/Ti/Si with or without templates exhibited dielectric constants of 120-200 and loss tangents of 0.01-0.0. The PZ films with (110) orientation exhibited an electric-field-inducedtransformation from the antiferroelectric phase to the ferroelectric phase with a polarization of ≍34 µC/cm2, and the energy that was stored during switching was 7.1 J/cm3. The field needed to excite the ferroelectric state and that needed to revert to the antiferroelectric state were 50 and 250 kV/cm, respectively. Relationships between the MOCVD processing and the film microstructure and properties are discussed.

scholarly journals Nanoindentation of Chromium Oxide Possessing Superior Hardness among Atomic-Layer-Deposited Oxides

Nanomaterials ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 82
Author(s):  
Taivo Jõgiaas ◽  
Aivar Tarre ◽  
Hugo Mändar ◽  
Jekaterina Kozlova ◽  
Aile Tamm
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Organic Chemical ◽  
X Ray ◽  
Layer Deposition ◽  
Ammonium Dichromate ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Deposition Substrate

Chromium (III) oxide is a technologically interesting material with attractive chemical, catalytic, magnetic and mechanical properties. It can be produced by different chemical and physical methods, for instance, by metal–organic chemical vapor deposition, thermal decomposition of chromium nitrate Cr(NO3)3 or ammonium dichromate (NH4)2Cr2O7, magnetron sputtering and atomic layer deposition. The latter method was used in the current work to deposit Cr2O3 thin films with thicknesses from 28 to 400 nm at deposition temperatures from 330 to 465 °C. The phase composition, crystallite size, hardness and modulus of elasticity were measured. The deposited Cr2O3 thin films had different structures from X-ray amorphous to crystalline α-Cr2O3 (eskolaite) structures. The averaged hardness of the films on SiO2 glass substrate varied from 12 to 22 GPa and the moduli were in the range of 76–180 GPa, as determined by nanoindentation. Lower values included some influence from a softer deposition substrate. The results indicate that Cr2O3 could be a promising material as a mechanically protective thin film applicable, for instance, in micro-electromechanical devices.

MOCVD of SnSx thin films for solar cell application

2015 ◽  
Vol 1738 ◽  
Author(s):  
Andrew J. Clayton ◽  
Stuart J. C. Irvine ◽  
Vincent Barrioz ◽  
Alessia Masciullo
Keyword(s):  
Chemical Vapor ◽  
Organic Chemical ◽  
Sulfur Source ◽  
Tin Sulfide ◽  
X Ray Diffraction ◽  
Phase Growth ◽  
Solar Cell Application ◽  
X Ray ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTAn inline metal organic chemical vapor deposition system was used to deposit tin sulfide at temperatures >500 °C. Tetramethyltin was used as the tin source and diethyldisulfide as the sulfur source. An overhead injector configuration was used delivering both precursors directly over the substrate. The tin and sulfur precursors were premixed before injection to improve chemical reaction in the gas phase. Growth temperatures 500 – 540 °C were employed producing films with approximate 1:1 stoichiometry of Sn and S detected by energy dispersive x-ray spectroscopy. X-ray diffraction showed there to be mixed phases with Sn2S3 present with SnS.

Study of Depth-Dependent Tetragonal Distortion of GaN Epilayer with Tri-Layer AlGaN Interlayer Growth on Si(111)

2011 ◽  
Vol 413 ◽  
pp. 11-17 ◽  
Author(s):  
Bin Feng Ding ◽  
Yong Quan Chai
Keyword(s):  
Chemical Vapor ◽  
Crystal Quality ◽  
Tetragonal Distortion ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
Near Surface ◽  
X Ray ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

A GaN epilayer with tri-layer AlGaN interlayer grown on Si (111) by metal-organic chemical vapor deposition (MOCVD) method was discussed by synchrotron radiation x-ray diffraction (SRXRD) and Rutherford backscattering (RBS)/C. The crystal quality of the epilayer is very good with a χmin=2.1%. According to the results of the θ-2θ scan of GaN(0002) and GaN(1122), the epilayer elastic strains in perpendicular and parallel directions were calculated respectively to be-0.019% and 0.063%. By the angular scan using RBS/C around a symmetric [0001] axis and an asymmetric [1213] axis in the (1010) plane of the GaN layer, the tetragonal distortion (eT ) were determined to be 0.09%. This result coincides with that from SRXRD perfectly. The strain decreases gradually towards the near-surface layer, which will avoid the film cracks efficiently and improve the crystal quality of the GaN epilayer remarkably.

Effect of Graded AlxGa1-xN Interlayer Buffer on the Strain of GaN Grown on Si (111) Using MOCVD Method

2008 ◽  
Vol 1068 ◽  
Author(s):  
KungLiang Lin ◽  
Edward-Yi Chang ◽  
Tingkai Li ◽  
Wei-Ching Huang ◽  
Yu-Lin Hsiao ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Buffer Layers ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Metal Organic ◽  
Proper Design ◽  
Organic Chemical Vapor Deposition ◽  
Gan Film

ABSTRACTGaN film grown on Si substrate with AlN/AlxGa1−xN buffer is studied by low pressure metal organic chemical vapor deposition (MOCVD) method. The AlxGa1−xN film with Al composition varying from 0∼ 0.66 was used. The correlation of the Al composition in the AlxGa1−xN film with the stress of the GaN film grown was studied using high resolution X-ray diffraction including symmetrical and asymmetrical ω/2θscans and reciprocal space maps. It is found that with proper design of the Al composition in the AlxGa1−xN buffer layer, crack-free GaN films can be successfully grown on Si (111) substrates using AlN and AlxGa1−xN buffer layers.

Effects of Cu/Ba Ratio in Precursor on MOCVD-Deposited YBa2Cu3O7-x Films on YYC Buffered Ni-W Alloy Tape

2014 ◽  
Vol 1082 ◽  
pp. 95-99
Author(s):  
Fei Zhang ◽  
Jie Xiong ◽  
Rui Peng Zhao ◽  
Yan Xue ◽  
Bo Wan Tao
Keyword(s):  
Vapor Deposition ◽  
Ybco Film ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
Ybco Films ◽  
X Ray ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Alloy Tape

To study the effects of Cu/Ba ratio of precursor on YBa2Cu3O7-x (YBCO) film, we have employed the technique of metal-organic chemical vapor deposition to prepare 500 nm thick YBCO films on CeO2/YSZ/Y2O3 (YYC) buffered Ni-W alloy tapes at series of Cu/Ba ratios of precursor. The analysis obtained from X-ray diffraction and scanning electron microscope revealed that the YBCO films crystallized better and became more continuous and denser as Cu/Ba ratio increased from 0.81 to 1.00, yielding that the critical current density (Jc) of YBCO films at 77K and 0T rose from 1.0 MA/cm2 to 1.4 MA/cm2. Moreover, the energy dispersive spectroscopy indicated that the increase in Cu/Ba ratio of precursor made the Cu/Ba ratio of the YBCO film matrix closer to the theoretical value of 1.5. However, for the Cu/Ba ratio of precursor in the range of 1.00~1.21, the crystallization and texture deteriorated severely and many unexpected precipitates of Ba-Cu-O and Cu-O arose, resulting in the dramatic drop of Jc from 1.4 MA/cm2 to 0.1 MA/cm2.

Sign in / Sign up

Export Citation Format

Share Document