Transport Properties Of Doped CsBi4Te6 Thermoelectric Materials
Keyword(s):
AbstractIn previous investigations we have introduced a variety of new chalcogenide-based materials with promising properties for thermoelectric applications. The chalcogenide CsBi4Te6 was previously reported to have a high ZT product with a maximum value at 260K. In order to improve this value, a series of doped CsBi4Te6 samples has been synthesized. Current doping studies have been very encouraging, with one sample found to have a maximum power factor of 51.5 μW/cm·K2 at 184 K. This paper reports on material characterization studies through the usual transport measurements to determine optimum doping concentration for various dopants.
1976 ◽
Vol IECI-23
(2)
◽
pp. 142-150
◽
Keyword(s):
2011 ◽
Vol 347-353
◽
pp. 3448-3455
Keyword(s):
Keyword(s):
Keyword(s):