Thermoelectric Properties of CoSb3 Nanoparticle Films

2011 ◽  
Vol 347-353 ◽  
pp. 3448-3455
Author(s):  
Ya Jun Yang ◽  
Xian Yun Liu ◽  
Xu Dong Wang ◽  
Mei Ping Jiang ◽  
Xian Feng Chen ◽  
...  

Cobblestone-like CoSb3 nanoparticle films have been achieved via a catalyst-free vapor transport growth technique. The thermoelectric properties of the nanoparticle films were measured from room temperature to around 500 oC. The resultant CoSb3 nanoparticle films show high electrical conductivities due to clean particle surfaces. A maximum power factor reaches 1.848×10−4 W/mK2 at 440 oC. The discussed approach is promising for realizing new types of highly efficient thermoelectric semiconductors.

CrystEngComm ◽  
2014 ◽  
Vol 16 (19) ◽  
pp. 3965-3970 ◽  
Author(s):  
Haiming Xu ◽  
Gang Chen ◽  
Rencheng Jin ◽  
Dahong Chen ◽  
Yu Wang ◽  
...  

Ultrathin Bi2Se3nanosheets (30 nm) have been successfully fabricated with 1 kW microwave power for 1 minute. The maximum power factor of the sample can reach up to 157 μW m−1K−2at 523 K, which is larger than the samples with thicknesses ranging from 50 nm to 100 nm.


Author(s):  
Ulises Acevedo Salas ◽  
Ismail Fourati ◽  
Jean Juraszek ◽  
Fabienne Richomme ◽  
Denis Pelloquin ◽  
...  

The strong interplay between magnetism and transport can tune the thermoelectric properties in chalcogenides and oxides. In the case of ferromagnetic CoS 2 pyrite, it was previously shown that the power factor is large at room temperature, reaching 1 mW m −1  K −2 and abruptly increases for temperatures below the Curie transition ( T C ), an increase potentially due to a magnonic effect on the Seebeck ( S ) coefficient. The too large thermal conductivity approximately equal to 10.5 W m −1  K −1 at room temperature prevents this pyrite from being a good thermoelectric material. In this work, samples belonging to the Co 1− x Fe x S 2 pyrite family ( x  = 0, 0.15 and 0.30) have thus been investigated in order to modify the thermal properties by the introduction of disorder on the Co site. We show here that the thermal conductivity can indeed be reduced by such a substitution, but that this substitution predominantly induces a reduction of the electronic part of the thermal conductivity and not of the lattice part. Interestingly, the magnonic contribution to S below T C disappears as x increases, while at high T , S tends to a very similar value (close to −42 µV K −1 ) for all the samples investigated. This article is part of a discussion meeting issue ‘Energy materials for a low carbon future’.


2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Jyun-Min Lin ◽  
Ying-Chung Chen ◽  
Chi-Pi Lin

Bismuth telluride-based compounds are known to be the best thermoelectric materials within room temperature region, which exhibit potential applications in cooler or power generation. In this paper, thermal evaporation processes were adopted to fabricate the n-type Bi2Te3thin films on SiO2/Si substrates. The influence of thermal annealing on the microstructures and thermoelectric properties of Bi2Te3thin films was investigated in temperature range 100–250°C. The crystalline structures and morphologies were characterized by X-ray diffraction and field emission scanning electron microscope analyses. The Seebeck coefficients, electrical conductivity, and power factor were measured at room temperature. The experimental results showed that both the Seebeck coefficient and power factor were enhanced as the annealing temperature increased. When the annealing temperature increased to 250°C for 30 min, the Seebeck coefficient and power factor of n-type Bi2Te3-based thin films were found to be about −132.02 μV/K and 6.05 μW/cm·K2, respectively.


1998 ◽  
Vol 545 ◽  
Author(s):  
Paul W. Brazis ◽  
Melissa Rocci ◽  
Duck-Young Chung ◽  
Mercouri G. Kanatzidis ◽  
Carl R. Kannewurf

AbstractIn previous investigations we have introduced a variety of new chalcogenide-based materials with promising properties for thermoelectric applications. The chalcogenide CsBi4Te6 was previously reported to have a high ZT product with a maximum value at 260K. In order to improve this value, a series of doped CsBi4Te6 samples has been synthesized. Current doping studies have been very encouraging, with one sample found to have a maximum power factor of 51.5 μW/cm·K2 at 184 K. This paper reports on material characterization studies through the usual transport measurements to determine optimum doping concentration for various dopants.


1998 ◽  
Vol 545 ◽  
Author(s):  
S. Kilibarda Dalafave ◽  
J. Ziegler ◽  
H. Mcallister

AbstractReported are the temperature dependencies of the thermoelectric power and electrical resistivity of mixed rhenium chalcogenides Re6Te15-x,Sex (0 ≤ x ≤ 8) in the range 90–420 K. Influence of the partial chalcogen exchange on thermoelectric properties of these compounds is discussed. The samples are prepared by sintering elemental powders inside evacuated and sealed quartz ampoules at 1150 K for 170 hours. X-ray analysis reveals an orthorhombic lattice for samples with x < 8 and a tetragonal lattice for the Re6Te7Se8. sample. The lattice parameters and the unit cell volume decrease with increasing selenium concentration.The measurements indicate p-type semiconducting behavior for all samples. The presence of the energy gap is observed at higher temperatures (T ≥ 180–220 K) for all x. Data suggest hopping conduction at lower temperatures. Room temperature resistivities increase non-linearly from 6.9 to 20.4 Ω m with the increasing selenium content. Initially, the thermoelectric power a increases with temperature for all samples, with the fastest increase in Re6Se8 Te7 and the slowest in Re6Te15. The temperature at which a reaches maximum decreases with the increasing Se content. Above this temperature, a decreases uniformly as the temperature increases, the slowest increase being for Re6Se8Te7 and the fastest for Re6Te15. Such α(T) dependence is also discussed. The temperature dependence of the power factor, α2/ρ, is presented. Comparison of ρ, α, and the power factor in Re6SexTe15-x with currently used state-of-the-art materials is given.


Materials ◽  
2020 ◽  
Vol 13 (12) ◽  
pp. 2835
Author(s):  
Sang-il Kim ◽  
Kang Yeol Lee ◽  
Jae-Hong Lim

Antimony telluride thin films display intrinsic thermoelectric properties at room temperature, although their Seebeck coefficients and electrical conductivities may be unsatisfactory. To address these issues, we designed composite films containing upper and lower Sb2Te3 layers encasing conductive poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS)- polyvinylpyrrolidone(PVP) nanowires. Thermoelectric Sb2Te3/PEDOT:PSS-PVP/Sb2Te3(ED) (STPPST) hybrid composite films were prepared by a multi-step coating process involving sputtering, electrospinning, and electrodeposition stages. The STPPST hybrid composites were characterized by field-emission scanning electron microscopy, X-ray diffraction, ultraviolet photoelectron spectroscopy, and infrared spectroscopy. The thermoelectric performance of the prepared STPPST hybrid composites, evaluated in terms of the power factor, electrical conductivity and Seebeck coefficient, demonstrated enhanced thermoelectric efficiency over a reference Sb2Te3 film. The performance of the composite Sb2Te3/PEDOT:PSS-PVP/Sb2Te3 film was greatly enhanced, with σ = 365 S/cm, S = 124 μV/K, and a power factor 563 μW/mK.


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