X-RAY DIFFRACTION ANALYSIS OF EPITAXIAL STRUCTURES

1985 ◽  
Vol 56 ◽  
Author(s):  
BRUCE M. PAINE
Keyword(s):  
Diffraction Analysis ◽  
Kinematic Model ◽  
Single Layer ◽  
Epitaxial Layers ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Depth Profiles ◽  
Atomic Displacements ◽  
Structure Factors

AbstractThe technique is described for use of x-ray double crystal diffractometry for analysis of epitaxial structures. This method has been shown to be very useful for characterizing a wide variety of configurations, ranging from single epitaxial layers to damaged superlattices. It yields depth profiles of structure factors and strains relative to the substrate, which can be directly related to layer thicknesses and compositions. Information about dislocations and random atomic displacements is also present. The key to this technique is computer fitting of the x-ray data with a model for the diffraction process, utilizing trial profiles for the strain and structure factors of the epitaxial layers. In the work to be presented a kinematic model for the diffraction is used. The technique is demonstrated with analyses of an Alx Ga(1−x) As single layer on GaAs, an AlSb/GaSb superlattice on GaSb, epitaxial CoSi2 on Si, and ion-implanted and annealed AlxGa(1−x)As superlattices on GaAs.

X-Ray Diffraction analysis of Au/Ni Multilayers

1988 ◽  
Vol 132 ◽  
Author(s):  
J. Chaudhuri ◽  
S. Shah ◽  
A. F. Jankowski
Keyword(s):  
Diffraction Analysis ◽  
Volume Fraction ◽  
Kinematic Model ◽  
Coherency Strain ◽  
X Ray Diffraction ◽  
Strain Profile ◽  
X Ray ◽  
Depth Profiles ◽  
Experimental Diffraction Pattern ◽  
Multilayered Materials

ABSTRACTX-ray diffraction is a useful method to measure the microscopic strain profile in multilayered materials. Depth profiles of strain in the modulation direction are obtained by an iterative fitting of the experimental diffraction pattern with a kinematic model. This approach was used to characterize the coherency strain profile in Au/Ni superlattices.The accommodation of coherency strain through the superlattice is dependent upon the atomic misfit between the component materials and the thickness of each layer. The depth profile of strain was determined for multilayers with repeat periodicities of 2.92 nm and 4.26 nm. A significant volume fraction of interfaces is present in these nanometric dimensioned laminates.

The chemical bond and atomic displacements in SrTiO3 from X-ray diffraction analysis

1995 ◽  
Vol 51 (6) ◽  
pp. 942-951 ◽  
Author(s):  
Yu. A. Abramov ◽  
V. G. Tsirelson ◽  
V. E. Zavodnik ◽  
S. A. Ivanov ◽  
Brown I. D.
Keyword(s):  
Diffraction Analysis ◽  
Chemical Bond ◽  
X Ray Diffraction ◽  
X Ray ◽  
Atomic Displacements

X-Ray DCD and EPMA Measurements of Al Concentration in Epitaxial AlxGa1-xAs/GaAs Layers

1992 ◽  
Vol 36 ◽  
pp. 221-229
Author(s):  
D.A. Macquistan ◽  
I.C. Bassignana ◽  
A.J. SpringThorpe ◽  
R. Packwood ◽  
V. Moore
Keyword(s):  
Epitaxial Layers ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Al Content ◽  
The Relationship ◽  
Composition Measurements

AbstractDouble Crystal X-Ray Diffraction (DCD) is often used to determine the Al content of AlxGa1-xAs/GaAs epitaxial layers. Assessing composition from a measurement of mismatch is problematic because it invokes a number of assumptions. This study bypasses these difficulties by comparing the measurement of mismatch directly with Al composition measurements made by electronprobe microanalysis. A study of coherent epitaxial AlxGa1-xAs layers showed that mismatch varies linearly with composition. The equation Al (x) = |ΔΘ| / 368 summarizes the relationship over the coherent range, where |ΔΘ| is measured in arc seconds.

scholarly journals In situ probing of the crystallization kinetics of rr-P3HT on single layer graphene as a function of temperature

2017 ◽  
Vol 19 (12) ◽  
pp. 8496-8503 ◽  
Author(s):  
Nicolas Boulanger ◽  
Victor Yu ◽  
Michael Hilke ◽  
Michael F. Toney ◽  
David R. Barbero
Keyword(s):  
Diffraction Analysis ◽  
Crystallization Kinetics ◽  
Single Layer ◽  
Single Layer Graphene ◽  
X Ray Diffraction ◽  
X Ray ◽  
Layer Graphene ◽  
Kinetics Of

In situ X-ray diffraction analysis of P3HT films during cooling down on both Si and G.

X-Ray Characterisation of Boron Delta Layers in Si and SiGe

1991 ◽  
Vol 220 ◽  
Author(s):  
A. R. Powell ◽  
R. A. Kubiak ◽  
T. E. Whall ◽  
E. H. C. Parker ◽  
D. K. Bowen
Keyword(s):  
High Temperature ◽  
Epitaxial Layers ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Carrier Confinement ◽  
Delta Layer ◽  
Non Destructive ◽  
Sheet Density

ABSTRACTWe demonstrate the growth, by MBE, of high sheet density B delta layers in both Si and SiGe epitaxial layers. Double Crystal X-Ray Diffraction is shown to be a non-destructive method of characterising the width of very narrow (0.3 nm) delta layers and the sheet density of the activated B. The ability of delta layers to withstand high temperature anneals is considered and it is found that a 750 °C anneal for 1 hour broadens the delta layer to beyond the width required for carrier confinement.

Irreversible hydrogenation of solid C60 with and without catalytic metals

1999 ◽  
Vol 14 (5) ◽  
pp. 2138-2146 ◽  
Author(s):  
Eric L. Brosha ◽  
John Davey ◽  
Fernando H. Garzon ◽  
Shimshon Gottesfeld
Keyword(s):  
Diffraction Analysis ◽  
Volume Fraction ◽  
Evolved Gas Analysis ◽  
Amorphous Material ◽  
Single Layer ◽  
Gas Analysis ◽  
X Ray Diffraction ◽  
Evolved Gas ◽  
X Ray ◽  
Graphite Sheets

The dehydrogenation of C60 · H18.7 was studied using thermogravimetric and powder x-ray diffraction analysis. C60 · H18.7 was found to be stable up to 430 °C in Ar at which point the release of hydrogen initiated the collapse of a fraction of fullerene molecules. X-ray diffraction analysis performed on C60 · H18.7 samples dehydrogenated at 454, 475, and 600 °C displayed an increasing volume fraction of amorphous material. The decomposition product comprises randomly oriented, single-layer graphite sheets. Evolved gas analysis using gas chromatograph (GC) mass spectroscopy confirmed the presence of both H2 and methane upon dehydrogenation. Attempts to improve reversibility or reduce hydrogenation/ dehydrogenation temperatures by addition of Ru and Pt catalysts were unsuccessful.

Characterization of Gasb-Based Alloy Semiconductors

1990 ◽  
Vol 216 ◽  
Author(s):  
H. Uekita ◽  
N. Kitamura ◽  
M. Ichimura ◽  
A. Usami ◽  
T. Wada
Keyword(s):  
Raman Spectroscopy ◽  
Liquid Phase ◽  
Epitaxial Layer ◽  
Structural Defects ◽  
Epitaxial Layers ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Alloy Semiconductors

ABSTRACTGaSb, AlxGa1-xSb, and AlxGa1-xSb epitaxial layers were grown by the liquid-phase epitaxy and characterized by photoluminescence, Raman spectroscopy, and double-crystal X-ray diffraction. The concentration of residual acceptors which are related to structural defects decreased with lowering growth temperature, but the GaSb epitaxial layer grown at an extremely low temperature of 270°C had poor crystalline quality. The AlxGa1-xSb (x≥0.15) and AlxGa1-xSb (x=0.02) epitaxial layers grown at 270 °C, however, had much better quality than the GaSb epitaxial layer grown at the same temperature.

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