Characterization of Gasb-Based Alloy Semiconductors

1990 ◽  
Vol 216 ◽  
Author(s):  
H. Uekita ◽  
N. Kitamura ◽  
M. Ichimura ◽  
A. Usami ◽  
T. Wada
Keyword(s):  
Raman Spectroscopy ◽  
Liquid Phase ◽  
Epitaxial Layer ◽  
Structural Defects ◽  
Epitaxial Layers ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Alloy Semiconductors

ABSTRACTGaSb, AlxGa1-xSb, and AlxGa1-xSb epitaxial layers were grown by the liquid-phase epitaxy and characterized by photoluminescence, Raman spectroscopy, and double-crystal X-ray diffraction. The concentration of residual acceptors which are related to structural defects decreased with lowering growth temperature, but the GaSb epitaxial layer grown at an extremely low temperature of 270°C had poor crystalline quality. The AlxGa1-xSb (x≥0.15) and AlxGa1-xSb (x=0.02) epitaxial layers grown at 270 °C, however, had much better quality than the GaSb epitaxial layer grown at the same temperature.

Deposition of TRISO Particles With Superhard SiC Coatings and the Characterization of Anisotropy by Raman Spectroscopy

2009 ◽  
Vol 131 (4) ◽  
Author(s):  
E. López-Honorato ◽  
P. J. Meadows ◽  
J. Tan ◽  
Y. Xiang ◽  
P. Xiao
Keyword(s):  
Solid Solution ◽  
Raman Spectroscopy ◽  
Pyrolytic Carbon ◽  
X Ray Diffraction ◽  
X Ray ◽  
Flat Substrate ◽  
High Concentrations ◽  
Triso Particles ◽  
Sic Coatings

In this work we have deposited silicon carbide (SiC) at 1300°C with the addition of small amounts of propylene. The use of propylene and high concentrations of methyltrichlorosilane (9 vol %) allowed the deposition of superhard SiC coatings (42 GPa). The superhard SiC could result from the presence of a SiC–C solid solution, undetectable by X-ray diffraction but visible by Raman spectroscopy. Another sample obtained by the use of 50 vol % Argon, also showed the formation of SiC with good properties. The use of a flat substrate together with the particles showed the importance of carrying out the analysis on actual particles rather than in flat substrates. We show that it is possible to characterize the anisotropy of pyrolytic carbon by Raman spectroscopy.

Thermal Silicidation of Ni/SiGe and Characterization of Resulting Silicide Films Using Raman Spectroscopy and X-ray Diffraction

2020 ◽  
Vol 98 (5) ◽  
pp. 457-464
Author(s):  
Woo Sik Yoo ◽  
Kitaek Kang ◽  
Toshikazu Ishigaki ◽  
Jung Gon Kim ◽  
Noriyuki Hasuike ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
X Ray Diffraction ◽  
X Ray

Epitaxial growth and characterization of BP on Si(100) substrate for use in c-GaN study

2005 ◽  
Vol 891 ◽  
Author(s):  
Tomohiko Takeuchi ◽  
Suzuka Nishimura ◽  
Tomoyuki Sakuma ◽  
Satoru Matumoto ◽  
Kazutaka Terashima
Keyword(s):  
Epitaxial Layer ◽  
Careful Analysis ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Si Substrates ◽  
Impurity Doping ◽  
Hall Effect Measurements

ABSTRACTBoronmonophosphide(BP) is one of the suitable materials for a buffer layer between the c-GaN(100) and Si(100) substrates. The growth of BP layer was carried out by MOCVD on Si(100) substrate of 2 inch in diameter. The growth rate was over 2 μm/h without any troubles such as the bowing or cracking. In addition, the thickness of BP epitaxial layer was uniform over a wide area. A careful analysis of x-ray diffraction suggested that the growth of BP epitaxial layer inherited the crystal orientation from Si(100) substrate. Cross-sectional TEM images showed some defects like dislocations near the interface between BP layer and Si substrate. The Hall effect measurements indicated that the conduction type of BP films grown on the both n-Si and p-Si substrates was n-type without impurity doping, and that the mobility and carrier concentrations were typically 357cm2/Vs and 1.5×1020cm−3(on n-Si) and 63cm2/Vs and 1.9×1019cm−3(on p-Si), respectively. In addition, c-GaN was grown on the substrate of BP/Si(100) by RF-MBE.

ERRATA: "CHARACTERIZATION OF POTASSIUM DOPED GdBa2Cu3O7-δ USING RAMAN SPECTROSCOPY AND X-RAY DIFFRACTION"

1996 ◽  
Vol 10 (23) ◽  
pp. 1159-1159
Author(s):  
THOMAS PREETHI CICILY ◽  
K. MANOJ KUMAR ◽  
NAYAR V. UNNIKRISHANAN ◽  
V. VIDYALAL ◽  
C.P.G. VALLABHAN
Keyword(s):  
Raman Spectroscopy ◽  
X Ray Diffraction ◽  
X Ray

Asymmetric Relaxation in Epitaxial Layers of III-V Compounds

1990 ◽  
Vol 202 ◽  
Author(s):  
A. G. Turnbull ◽  
G. S. Green ◽  
B. K. Tanner ◽  
M. A. G. Halliwell
Keyword(s):  
Epitaxial Layer ◽  
Epitaxial Layers ◽  
Double Crystal ◽  
X Ray

ABSTRACTRelaxation in a 3μm epitaxial layer of GaAsSb on GaAs, a 1μm layer of InGaAs on InP and an InGaAs superlattice on InP has been investigated by double crystal X-ray diffractometry and double crystal X-ray synchrotron topography and found to be asymmetric. The origins of assymetric relaxation are discussed and the sensitivity of diffractometry and topography to the detection of layer relaxation compared.

Characterization of Recoiling Oxygen in Silicon by Double-Crystal X-Ray Diffraction, Tem and Monte Carlo Simulation

1986 ◽  
Vol 69 ◽  
Author(s):  
F. Cembali ◽  
A. M. Mazzone ◽  
M. Servidori
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Double Crystal ◽  
X Ray ◽  
Free Carriers ◽  
Anomalous Formation

The widespread use of through-oxide implants in Si-MOS technology has prompted many studies to characterize the behaviour of oxygen recoiling from the passivating SiO2 layer into the Si substrate. These studies have given support for the idea that an anomalous formation of defects, which alter the profile of the implanted impurity and the mobility of the free carriers, is connected with the oxygen recoils.

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