A Beem Study of PtSi Schottky Contacts on Ion-Milled Si

1999 ◽  
Vol 564 ◽  
Author(s):  
Guo-Ping Ru ◽  
C. Detavernier ◽  
R. A. Donaton ◽  
A. Blondeel ◽  
P. Clauws ◽  
...  
Keyword(s):  
Deep Level ◽  
Ion Beam ◽  
Milling Process ◽  
Schottky Contacts ◽  
Ion Beam Sputtering ◽  
Ion Milling ◽  
Si Substrates ◽  
Ballistic Electron ◽  
Beam Sputtering ◽  
Transient Spectroscopy

AbstractBallistic electron emission microscopy (BEEM) and deep level transient spectroscopy (DLTS) have been used to study the effects of substrate damage introduced by an ion-milling process in PtSi/n-Si Schottky contacts. Argon ions with well-defined energies of 300, 500, 700, 1000, 1500 eV were used to sputter n-type Si substrates in an ion beam sputtering system before metal deposition and silicide formation. Histograms of the PtSi/n-Si Schottky barrier height (SBH) measured by BEEM show that the mean SBH decreases with increasing ion energy, which can be explained as a result of donor-like defects that are introduced by the ion milling treatment. From DLTS measurements, we found direct evidence for the presence of such defects.

Characterization of Ion-Beam-Sputtered Molybdenum Films on N-Type Silicon

1982 ◽  
Vol 18 ◽  
Author(s):  
F. D. Auret ◽  
O. Paz ◽  
N. A. Bojarczuk
Keyword(s):  
Deep Level ◽  
Ion Beam ◽  
Current Mode ◽  
Beam Current ◽  
Beam Current Density ◽  
Ion Beam Sputtering ◽  
Defective Layer ◽  
Beam Sputtering ◽  
Defect Levels ◽  
Transient Spectroscopy

The introduction of defect levels in the band gap of silicon (ND = 2.5×1015 cm−3), after ion beam sputtering of molybdenum contacts, was investigated with deep level transient spectroscopy and scanning electron microscopy (electron-beam-induced current mode). Molybdenum contacts were fabricated with beam voltages of 700, 1100 and 1500 V at a beam current density of 2.5 mA cm−2. Defect levels were observed at energies ranging from 0.18 to 0.55 eV below the conduction band. It was established that the introduction of these defect levels depends on the processing conditions and that they reside very close to the Mo-Si interface (less than 0.4 μtm). A correlation was observed between the fabrication conditions, the current-voltage and capacitance-voltage characteristics of the contacts, and the concentrations of the defects present. Charge collection micrographs confirmed the presence of a defective layer close to the surface.

Aging effect of optical properties on SiO2films grown on Si substrates by ion beam sputtering

2012 ◽  
Author(s):  
Yiqin Ji ◽  
Huasong Liu ◽  
Yugang Jiang ◽  
Dandan Liu ◽  
Lishuan Wang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Beam ◽  
Aging Effect ◽  
Ion Beam Sputtering ◽  
Si Substrates ◽  
Beam Sputtering

Synthesis of SiC thin films on Si substrates by ion-beam sputtering

2015 ◽  
Vol 9 (2) ◽  
pp. 392-399
Author(s):  
I. K. Beisembetov ◽  
K. Kh. Nusupov ◽  
N. B. Beisenkhanov ◽  
S. K. Zharikov ◽  
B. K. Kenzhaliev ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Si Substrates ◽  
Beam Sputtering

PbTiO3 Films Deposited by an Alternating Dual-Target Ion Beam Sputtering Technique

1991 ◽  
Vol 243 ◽  
Author(s):  
B.E. Cole ◽  
R.D. Horning ◽  
P.W. Kruse
Keyword(s):  
Structural Characteristics ◽  
Ion Beam ◽  
Pyroelectric Coefficient ◽  
Dielectric Constants ◽  
Thin Layers ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Beam Sputtering ◽  
Dual Target

AbstractThin films, 0.2 μm to 2 μm thick, of ferroelectric PbTiO3 have been deposit ed on Pt coated Si wafers using a novel dual target ion beam sputtering technique. The sputtering targets of PbO and Ti are shuttled back and forth into a Xe ion beam, depositing very thin (10 - 15 Å) alternating layers of PbO and TiO2. The substrate is heated in situ, allowing interdiffusion of the thin layers into a homogeneous PbTiO3 film. Film composition can be controlled accurately and repeatably by controlling the ratio of the sputtering times from each target. Structural characteristics were analyzed by x-ray diffraction, Rutherford backscattering as a function of the sputtering time ratio and the deposition temperature on Pt and Si3N4 coated Si substrates. The stoichiometric PbTiO3 films have a tetragonal perovskite structure with a slight c-axis preference. Capacitor structures show ferroelectric hysterisis loops, dielectric constants of 100-250, loss tangents between 0.002 and 0.04 and a pyroelectric coefficient greater than 5 x 10−8 C/cm2 °C.

Effects of Nitrogen Ion Energy on the Growth Mode of WN Films Deposited by Reactive Ion Beam Sputtering

1992 ◽  
Vol 268 ◽  
Author(s):  
A.H. Benhocine ◽  
F. Meyer ◽  
M. Eizenberg ◽  
D. Bouchier ◽  
S. Kianfar
Keyword(s):  
Ion Beam ◽  
Growth Mode ◽  
Sticking Coefficient ◽  
Ion Beam Sputtering ◽  
Ion Energy ◽  
Si Substrates ◽  
Beam Sputtering ◽  
Electron Spectrometry ◽  
Nitrogen Ion

ABSTRACTWN films were deposited on clean Si substrates by Reactive Ion Beam Sputtering in a UHV system. The growth mode of the films as a function of the nitrogen ion energy was investigated by in situ Auger Electron Spectrometry. The energy of the incident ions was varied from 250 eV to 3 keV. We observed a significant nitridation of the silicon at the very beginning of the deposition. This nitridation is more pronounced for the lower energy and is more reduced for 2 keV-ions. It seems to follow the trend of the film composition: 250 eV-ions and 2 keV-ions result in N-rich films (N/W≈1) and W-rich films (N/W≈0.5), respectively. All these results are discussed in terms of sputtering yield, backscattering and sticking coefficient and are explained by taking into account: first, the interaction between the incident ions and the target, and second, the interaction between the species emitted by the target and the growing film.

Fabrication of patterned domains with graphitic clusters in amorphous carbon using a combination of ion implantation and electron irradiation techniques

2005 ◽  
Vol 908 ◽  
Author(s):  
Eiji Iwamura ◽  
Tatsuhiko Aizawa
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Amorphous Carbon ◽  
Ion Beam ◽  
Film Surface ◽  
Carbon Films ◽  
Implantation Technique ◽  
Ion Beam Sputtering ◽  
Si Substrates ◽  
Beam Sputtering

AbstractFabrication of domains containing graphitic structures in amorphous carbon (a-C) films was demonstrated. Amorphous carbon thin films with 200 nm thickness were deposited on Si substrates by ion-beam sputtering. Iron atoms in a range from 4×1013 to 3.7×1016 cm-2 were doped to the a-C films by an ion implantation technique through a nickel mask with a grid of square windows of 500×500 μm and a net of 50 μm in width as a template. After removing the metal mask, the partly Fe-containing a-C films were exposed to a low-energy electron shower. In the regions where Fe atoms were implanted, Fe were crystallized and preferably diffused toward the film surface leaving graphitic structures more than 10 nm in size in the interior of the amorphous carbon films. On the other hand, the masked regions, where Fe atoms were not implanted, remained amorphous. The results suggest that regions, which consist of amorphous domains and graphitic domains, can be intentionally arranged in a-C thin films.

Novel Multiferroic Lead-Free BaTiO3/FeBSi Composite Films

2010 ◽  
Vol 123-125 ◽  
pp. 157-160
Author(s):  
Zhen Zhen Zhou ◽  
Deng Lu Hou ◽  
Li Ma ◽  
Cong Mian Zhen
Keyword(s):  
Intermediate Phase ◽  
Ion Beam ◽  
Composite Films ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Si Substrates ◽  
Microscopy Image ◽  
Beam Sputtering

“Green” multiferroic BaTiO3/FeBSi composite films were grown by pulsed laser deposition and ion beam sputtering on general Pt/Ti/SiO2/Si substrates. Room temperature X-ray diffraction and Raman scattering show that the crystal structures of BaTiO3 and FeBSi are tetragonal and amorphous, respectively, and no additional or intermediate phase peaks appears in the composite films. A cross-sectional scanning electron microscopy image clearly demonstrates a 2-2 type structure with sharp interface between the top FeBSi layer and bottom BaTiO3 layer. The magnetic properties of the top FeBSi are obviously modified by the bottom BaTiO3. The composite films show obvious ferroelectric feature.

Study of interface formation of (Ba,Sr)TiO3 thin films grown by rf sputter deposition on bare Si and thermal SiO2/Si substrates.

2002 ◽  
Vol 747 ◽  
Author(s):  
N. A. Suvorova ◽  
A. H. Mueller ◽  
A. A. Suvorova ◽  
M. Saunders ◽  
E. A. Irene
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
High Resolution Electron Microscopy ◽  
Ion Beam Sputtering ◽  
Si Substrates ◽  
Resolution Electron ◽  
Capacitance Voltage ◽  
Beam Sputtering ◽  
Order Of Magnitude ◽  
Rf Sputter Deposition

ABSTRACT(Ba,Sr)TiO3 (BST) thin films were deposited by ion beam sputtering on both bare and oxidized Si. Spectroscopic ellipsometry (SE) model results have shown an increase in the SiO2 layer thickness for bare substrates and those with a 1 nm initial oxide layer, and a decrease for thicker (3.5 nm) initial SiO2 films. This result was confirmed by high resolution electron microscopy (HREM) analysis of the films, and it is believed to be due to simultaneous subcutaneous oxidation of Si and reaction of the BST layer with SiO2. From high-frequency capacitance-voltage (C-V) analysis, a decrease in the interface trap density Dit of an order of magnitude was observed for oxidized Si substrates.

In Situ Hydride Formation in Zirconium and Titanium during Ion Milling

1995 ◽  
Vol 1 (4) ◽  
pp. 175-184 ◽  
Author(s):  
Graham J.C. Carpenter ◽  
Jennifer A. Jackman ◽  
John P. McCaffrey ◽  
Reza Alani
Keyword(s):  
Ion Beam ◽  
Thin Foil ◽  
Ion Beam Sputtering ◽  
Ion Milling ◽  
Hydride Formation ◽  
Diffusion Pump ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Residual Vacuum

Changes in microstructure of Zr, Ti, and Ti-6%Al-%V resulting from ion-beam sputtering used to prepare samples for transmission electron microscopy have been correlated with hydrogen absorption. Zr was particularly sensitive to this phenomenon, resulting in extensive hydride formation in thin foil samples. Hydrogen enrichment extending to several micrometers in depth could also be produced in bulk samples in a few hours of sputtering. The performance of various sputtering units in different configurations has been examined. It is concluded that hydride formation appears to be caused primarily by the presence of hydrocarbons, for example, from the backstreaming of diffusion pump oil, in the residual vacuum background of the sputtering chamber.

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