PbTiO3 Films Deposited by an Alternating Dual-Target Ion Beam Sputtering Technique

1991 ◽  
Vol 243 ◽  
Author(s):  
B.E. Cole ◽  
R.D. Horning ◽  
P.W. Kruse
Keyword(s):  
Structural Characteristics ◽  
Ion Beam ◽  
Pyroelectric Coefficient ◽  
Dielectric Constants ◽  
Thin Layers ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Beam Sputtering ◽  
Dual Target

AbstractThin films, 0.2 μm to 2 μm thick, of ferroelectric PbTiO3 have been deposit ed on Pt coated Si wafers using a novel dual target ion beam sputtering technique. The sputtering targets of PbO and Ti are shuttled back and forth into a Xe ion beam, depositing very thin (10 - 15 Å) alternating layers of PbO and TiO2. The substrate is heated in situ, allowing interdiffusion of the thin layers into a homogeneous PbTiO3 film. Film composition can be controlled accurately and repeatably by controlling the ratio of the sputtering times from each target. Structural characteristics were analyzed by x-ray diffraction, Rutherford backscattering as a function of the sputtering time ratio and the deposition temperature on Pt and Si3N4 coated Si substrates. The stoichiometric PbTiO3 films have a tetragonal perovskite structure with a slight c-axis preference. Capacitor structures show ferroelectric hysterisis loops, dielectric constants of 100-250, loss tangents between 0.002 and 0.04 and a pyroelectric coefficient greater than 5 x 10−8 C/cm2 °C.

Magnetic and Structural Characteristics of Multi-layered Films Composed of Fe and Si Ultra-thin Layers

1991 ◽  
Vol 231 ◽  
Author(s):  
K. Kubota ◽  
M. Nagakubo ◽  
M. Naoe
Keyword(s):  
Structural Characteristics ◽  
Ion Beam ◽  
Thin Layers ◽  
Soft Magnetic Properties ◽  
Ion Beam Sputtering ◽  
Soft Magnetic ◽  
Magnetostatic Interaction ◽  
Beam Sputtering ◽  
Amorphous Si ◽  
The Relationship

AbstractFe and Si layers were deposited alternately by using ion beam sputtering apparatus and the relationship between crystal structure and soft magnetic properties of these multi-layered films have been investigated in detail. The clear periodicity of multi-layered films was confirmed even at the thicknesses of Fe and Si layers δFe and δSi as small as 8.5 Å.The saturation magnetization 4πMs for all Fe layers decreased with decrease of δFe and δSi, and the coercivity Hc of these films took minimum of 1.0 Oe at δFe of 8.5 Å.Such a significant decrease of 4TEMs may be attributed to the formation of nonmagnetic regions at both side of each Fe layers. The thickness of these nonmagnetic regions may be estimated at approximately 1.5 Å from the measured value of 4flMs. This thickness seems to be very small because it is almost equal to that of one monolayer of bcc α-Fe. The low Hc of the films with δFe and δSi of 8.5 Å may be due to the formation of ultra-fine crystallites in Fe layer by insertion of amorphous Si layer and the direct magnetostatic interaction among Fe layers.

Novel Multiferroic Lead-Free BaTiO3/FeBSi Composite Films

2010 ◽  
Vol 123-125 ◽  
pp. 157-160
Author(s):  
Zhen Zhen Zhou ◽  
Deng Lu Hou ◽  
Li Ma ◽  
Cong Mian Zhen
Keyword(s):  
Intermediate Phase ◽  
Ion Beam ◽  
Composite Films ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Si Substrates ◽  
Microscopy Image ◽  
Beam Sputtering

“Green” multiferroic BaTiO3/FeBSi composite films were grown by pulsed laser deposition and ion beam sputtering on general Pt/Ti/SiO2/Si substrates. Room temperature X-ray diffraction and Raman scattering show that the crystal structures of BaTiO3 and FeBSi are tetragonal and amorphous, respectively, and no additional or intermediate phase peaks appears in the composite films. A cross-sectional scanning electron microscopy image clearly demonstrates a 2-2 type structure with sharp interface between the top FeBSi layer and bottom BaTiO3 layer. The magnetic properties of the top FeBSi are obviously modified by the bottom BaTiO3. The composite films show obvious ferroelectric feature.

Magnetic and Crystallographic Interactions of Alternately Deposited Fe and Al ultra-thin Layers

1989 ◽  
Vol 151 ◽  
Author(s):  
M. Nagakubo ◽  
T. Yamamoto ◽  
M. Naoe
Keyword(s):  
Ion Beam ◽  
Thin Layers ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
Crystallite Orientation ◽  
Transition Range ◽  
Multilayered Films ◽  
Beam Sputtering ◽  
Crystallographic Characteristics ◽  
Atomic Distance

ABSTRACTMultilayered films consisting of ferromagnetic Fe and nonmagnetic Al layers were prepared by using ion beam sputtering, and the relationships between their crystallographic characteristics and soft magnetic properties have been investigated in detail.The periodicity of the multilayered films was confirmed for various layer thicknesses (ΔFe and ΔA1) above 10Å from their X-ray diffraction peaks at low angle. When ΔFe decreased along with ΔA1 from 100Å, the coercivity Hc decreased and showed a minimum of 1.5 Oe at layer thicknesses of 20Å, but at the same time, the saturation magnetization 4πMs which was estimated from total thickness of the Fe layers decreased from 20 kG and showed drastic decrease at ΔFe below 10Å. For ΔFe above 100Å, 4πMs was constant around 20 kG without dependence on ΔA1. When ΔAl was changed for AFe of 100Å, the values of Hc had a interesting relationship with the crystallite orientation in Fe layers. Namely, the preferentially oriented planes of α-Fe crystallites changed from (110) to (200) in the case of Al layer thinner than 15Å and Hc showed a minimum below 4 Oe for ΔAl in this transition range of crystallite orientation, while 4πMs of all Fe layers themselves was kept at 20 kG. Taking into consideration that the nearest atomic distance of fcc Al and the lattice constant of bcc Fe is almost the same, these results may be caused by crystallographical interaction at the interfaces between Fe and Al layers.

Pyroelectric Properties of Lead Based Ferroelectric thin Films

1993 ◽  
Vol 310 ◽  
Author(s):  
A. Patel ◽  
D.A. Tossell ◽  
N.M. Shorrocks ◽  
R. W. Whatmore ◽  
R. Watton
Keyword(s):  
Ion Beam ◽  
Sol Gel ◽  
High Energy ◽  
Pyroelectric Coefficient ◽  
Dielectric Constants ◽  
Ion Beam Sputtering ◽  
Oxygen Ion ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering ◽  
La Doped

AbstractLead based thin ferroelectric films have been prepared using both sol-gel and dual ion beam sputtering (DIBS) processes. Material compositions within the PbTiO3 and PLZT system have been deposited by both techniques onto metallised silicon. By using a standard sol-gel prepared solution, modified with acetylacetone and spin-coating, lµm thick fully perovskite layers, were obtained at low temperature (450°) with some preferred orientation. The grain size was in the range 0.2-0.4µm. A dielectric constant of 400 and a reversible pyroelectric coefficient of 1.2 × 10−4Cm−2K−1 were obtained. In contrast, a range of capping layers (SiO2, A12O3, BPSG) on silicon have been investigated using the DIBS process. Highly crystalline (100) and (111) films were readily produced at temperatures in excess of 550°, at a growth rate of 0.3µm/hour. Control of stoichiometry has also been studied in detail, by sputtering of a composite metal-ceramic target with a high energy Kr beam and by bombarding the growing film with a low energy oxygen ion-beam. Dielectric constants of 200-300, losses below 0.015 and resistivities above 1010Ωm have been achieved. A pyroelectric coefficient of the order of 2.5 × 10−4Cm−2K-1, pre-poled for a La-doped film on BPSG capped Si was obtained, which did not increase significantly on poling.

Relationship Between Microstructure and Hardness of ZrN/TiN Multi-Layers with Various Bilayer Thicknesses

2010 ◽  
Vol 63 ◽  
pp. 392-395
Author(s):  
Yoshifumi Aoi ◽  
Satoru Furuhata ◽  
Hiromi Nakano
Keyword(s):  
Mechanical Property ◽  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Microstructure And Mechanical Property

ZrN/TiN multi-layers were synthesized by ion beam sputtering technique. Microstructure and mechanical property of the ZrN/TiN multi-layers were characterized and the relationships between microstructure and hardness of the ZrN/TiN multi-layers with various bilayer thicknesses and thickness ratios were investigated. The microstructure of multi-layers have been investigated using transmission electron microscope (TEM) and X-ray diffraction (XRD).

Aging effect of optical properties on SiO2films grown on Si substrates by ion beam sputtering

2012 ◽  
Author(s):  
Yiqin Ji ◽  
Huasong Liu ◽  
Yugang Jiang ◽  
Dandan Liu ◽  
Lishuan Wang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Beam ◽  
Aging Effect ◽  
Ion Beam Sputtering ◽  
Si Substrates ◽  
Beam Sputtering

A Beem Study of PtSi Schottky Contacts on Ion-Milled Si

1999 ◽  
Vol 564 ◽  
Author(s):  
Guo-Ping Ru ◽  
C. Detavernier ◽  
R. A. Donaton ◽  
A. Blondeel ◽  
P. Clauws ◽  
...  
Keyword(s):  
Deep Level ◽  
Ion Beam ◽  
Milling Process ◽  
Schottky Contacts ◽  
Ion Beam Sputtering ◽  
Ion Milling ◽  
Si Substrates ◽  
Ballistic Electron ◽  
Beam Sputtering ◽  
Transient Spectroscopy

AbstractBallistic electron emission microscopy (BEEM) and deep level transient spectroscopy (DLTS) have been used to study the effects of substrate damage introduced by an ion-milling process in PtSi/n-Si Schottky contacts. Argon ions with well-defined energies of 300, 500, 700, 1000, 1500 eV were used to sputter n-type Si substrates in an ion beam sputtering system before metal deposition and silicide formation. Histograms of the PtSi/n-Si Schottky barrier height (SBH) measured by BEEM show that the mean SBH decreases with increasing ion energy, which can be explained as a result of donor-like defects that are introduced by the ion milling treatment. From DLTS measurements, we found direct evidence for the presence of such defects.

Aluminum nitride films synthesized by dual ion beam sputtering

2004 ◽  
Vol 19 (12) ◽  
pp. 3521-3525 ◽  
Author(s):  
Sheng Han ◽  
Hong-Ying Chen ◽  
Chih-Hsuan Cheng ◽  
Jian-Hong Lin ◽  
Han C. Shih
Keyword(s):  
Crystal Structure ◽  
Aluminum Nitride ◽  
Ion Beam ◽  
Diffraction Field ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
Beam Voltage ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering

Aluminum nitride films were deposited by varying the voltages of argon ion beams from 400 to 1200 V in dual ion beam sputtering. The crystal structure, microstructure, and elemental distributions of the aluminum nitride films were analyzed by x-ray diffraction, field emission scanning electron microscopy, and secondary ion mass spectroscopy, respectively. The aluminum nitride films exhibited the 〈002〉 preferred orientation at an optimal ion beam voltage of 800 V. The orientation changed to a mixture of {100} and {002} planes above 800 V, accounting for radiation damage. The thickness of the film increases with increasing ion beam voltage, reaching a steady state value of 210 nm at an ion beam voltage of 1200 V. Under optimal condition (800 V), the c-axis orientation of the aluminum nitride 〈002〉 film was obtained with a dense and high-quality crystal structure.

The Structure of Si and Ge Deposited by Ion Beam Sputtering

1985 ◽  
Vol 47 ◽  
Author(s):  
H. Windischmann ◽  
J. M. Cavese ◽  
R. W. Collins ◽  
R. D. Harris ◽  
J. Gonzalez-Hernandez
Keyword(s):  
Crystallization Temperature ◽  
Film Growth ◽  
Ion Beam ◽  
Operating Pressure ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
Oxygen Contamination ◽  
Beam Sputtering ◽  
Silicon And Germanium ◽  
Substrate Temperatures

ABSTRACTThe crystallinity for silicon and germanium films deposited by ion beam sputtering (IBS) as a function of substrate temperatures was determined using Raman spectroscopy, spectroscopic ellipsometry, electrical conductivity and x-ray diffraction measurements. The results show that IBS silicon crystallizes between 300–350°C while germanium crystallizes between 20–200°C. Reasonably good agreement is obtained among the four distinctively different characterization techniques in identifying the onset of crystallinity. A direct relationship is observed between the substrate temperature required for crystallization and the log of the operating pressure for various deposition techniques. Energetic particle stimulation during film growth appears to reduce the crystallization temperature at a given operating pressure. Raman data show that the crystallization temperature depends on the deposition rate. A graded structure is observed in films deposited above 300°C, probably due to oxygen contamination.

The Effect of Self-Implantation on the Interdiffusion in Amorphous Si/Ge Multilayers

1986 ◽  
Vol 74 ◽  
Author(s):  
B. Park ◽  
F. Spaepen ◽  
J. M. Poate ◽  
D. C. Jacobson
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
Average Composition ◽  
X Ray ◽  
Composition Modulation ◽  
Beam Sputtering ◽  
Mixing Distance ◽  
Diffraction Peaks ◽  
Amorphous Si

AbstractArtificial amorphous Si/Ge multilayers of equiatomic average composition with a repeat length around 60 Å have been prepared by ion beam sputtering. Implantation with 29Si led to a decrease in the intensity of the X-ray diffraction peaks arising from the composition modulation, which could be used for an accurate measurement of the implantation-induced mixing distance. Subsequent annealing showed no difference between the interdiffusivity in an implanted and unimplanted sample.

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