Characterization of Ion-Beam-Sputtered Molybdenum Films on N-Type Silicon

1982 ◽  
Vol 18 ◽  
Author(s):  
F. D. Auret ◽  
O. Paz ◽  
N. A. Bojarczuk
Keyword(s):  
Deep Level ◽  
Ion Beam ◽  
Current Mode ◽  
Beam Current ◽  
Beam Current Density ◽  
Ion Beam Sputtering ◽  
Defective Layer ◽  
Beam Sputtering ◽  
Defect Levels ◽  
Transient Spectroscopy

The introduction of defect levels in the band gap of silicon (ND = 2.5×1015 cm−3), after ion beam sputtering of molybdenum contacts, was investigated with deep level transient spectroscopy and scanning electron microscopy (electron-beam-induced current mode). Molybdenum contacts were fabricated with beam voltages of 700, 1100 and 1500 V at a beam current density of 2.5 mA cm−2. Defect levels were observed at energies ranging from 0.18 to 0.55 eV below the conduction band. It was established that the introduction of these defect levels depends on the processing conditions and that they reside very close to the Mo-Si interface (less than 0.4 μtm). A correlation was observed between the fabrication conditions, the current-voltage and capacitance-voltage characteristics of the contacts, and the concentrations of the defects present. Charge collection micrographs confirmed the presence of a defective layer close to the surface.

A Beem Study of PtSi Schottky Contacts on Ion-Milled Si

1999 ◽  
Vol 564 ◽  
Author(s):  
Guo-Ping Ru ◽  
C. Detavernier ◽  
R. A. Donaton ◽  
A. Blondeel ◽  
P. Clauws ◽  
...  
Keyword(s):  
Deep Level ◽  
Ion Beam ◽  
Milling Process ◽  
Schottky Contacts ◽  
Ion Beam Sputtering ◽  
Ion Milling ◽  
Si Substrates ◽  
Ballistic Electron ◽  
Beam Sputtering ◽  
Transient Spectroscopy

AbstractBallistic electron emission microscopy (BEEM) and deep level transient spectroscopy (DLTS) have been used to study the effects of substrate damage introduced by an ion-milling process in PtSi/n-Si Schottky contacts. Argon ions with well-defined energies of 300, 500, 700, 1000, 1500 eV were used to sputter n-type Si substrates in an ion beam sputtering system before metal deposition and silicide formation. Histograms of the PtSi/n-Si Schottky barrier height (SBH) measured by BEEM show that the mean SBH decreases with increasing ion energy, which can be explained as a result of donor-like defects that are introduced by the ion milling treatment. From DLTS measurements, we found direct evidence for the presence of such defects.

scholarly journals Nanostructures on Sapphire Surfaces Induced by Metal Impurity Assisted Ion Beam

Coatings ◽  
2020 ◽  
Vol 10 (10) ◽  
pp. 949 ◽  
Author(s):  
Qian Bi ◽  
Zhili Chen ◽  
Yuzhao Liu ◽  
Li Tang ◽  
Yingxue Xi ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Beam Current ◽  
Beam Current Density ◽  
Angle Of Incidence ◽  
Ion Beam Sputtering ◽  
Metal Impurity ◽  
Metal Impurities ◽  
Ripple Formation ◽  
Beam Sputtering

The metal impurity assisted ion beam technology has shown its uniqueness and effectiveness in the formation and precise control of nanostructures on the surface of materials. Hence, the investigation in this area is vital. The morphology evolution of self-organized nanostructures induced by Fe co-deposition assisted Ar+ ion beam sputtering at a different distance from the impurity target was investigated on sapphire, using atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). We also investigated the role of metal impurities on sapphire ripple formation. Experiments were carried out at an oblique angle of incidence 65° with constant ion beam current density 487 μA/cm2 and the erosion duration of 60 min at room temperature (20 °C). The introduction of Fe impurity increased the longitudinal height and roughness of the surface nanostructures. Moreover, the amounts of Fe deposited on the surface decreased with increasing distance, and the morphology of the smooth sapphire surface demonstrated a strong distance dependence. Differences in surface morphology were attributed to changes in metal impurity concentration. With an increase of impurity target distance, island-like structures gradually evolved into continuous ripples. At the same time, the orderliness of nanostructures was enhanced, the longitudinal height gradually decreased, while the spatial frequency was unchanged. In addition, there were very few metal impurities on the etched sample. During the ion beam sputtering process, island-like structures promoted the growth of ripples but destroyed their orderliness.

High Resolution Backscatter Electron (BSE) Imaging using the Autrata Modified YAG BSE Detector: Comparison of an In-lens Hitachi S-900 FESEM with the Below-the-Lens Hitachi S-4700 FESEM

2001 ◽  
Vol 7 (S2) ◽  
pp. 1046-1047
Author(s):  
Stanley L. Erlandsen ◽  
Ya Chen ◽  
Chris Frethem
Keyword(s):  
High Resolution ◽  
Colloidal Gold ◽  
Ion Beam ◽  
Beam Current ◽  
Backscatter Electron ◽  
Ion Beam Sputtering ◽  
Gold Particles ◽  
Lens Position ◽  
Beam Sputtering ◽  
Working Distance

To obtain high resolution backscatter electron (BSE) images in field emission SEM (FESEM), one must consider selection of accelerating voltage, beam current, working distance between the specimen and the backscatter detector (in-lens or below-the-lens position for the specimen), the type of BSE detector, and the type of metal used to coat the specimen to improve conductivity and signal collection [1]. A new generation of below-the-lens FESEM have been tested for BSE imaging on biological samples, but no information exists on whether or not high resolution imaging is possible. Here we report the comparison of detection of a colloidal gold standard (6, 12, 18 nm) by high resolution BSE imaging using Autrata-modified YAG detectors in an in-lens FESEM and in a below-the-lens FESEM.Standards were prepared by mixing colloidal gold particles of 6 nm, 12 nm, and 18 nm. The gold particles were attached via poly-l-lysine to glass chips and coated with <1 nm Pt by ion beam sputtering.

Defect levels in Cu2ZnSn(SxSe1−x)4 solar cells probed by current-mode deep level transient spectroscopy

2014 ◽  
Vol 104 (19) ◽  
pp. 192106 ◽  
Author(s):  
Sandip Das ◽  
Sandeep K. Chaudhuri ◽  
Raghu N. Bhattacharya ◽  
Krishna C. Mandal
Keyword(s):  
Solar Cells ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Current Mode ◽  
Defect Levels ◽  
Transient Spectroscopy

The Characterization of CIGS Thin Films Prepared by Ion Beam Sputtering Deposition from a Quaternary Target

2013 ◽  
Vol 734-737 ◽  
pp. 2545-2548
Author(s):  
Chao Ming Chen ◽  
Ping Fan ◽  
Guang Xing Liang ◽  
Zhuang Hao Zheng ◽  
Dong Ping Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Hall Effect Measurement ◽  
Beam Current ◽  
Chalcopyrite Structure ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
X Ray ◽  
Beam Sputtering ◽  
Beam Currents

This study reports the successful preparation of Cu (In, Ga)Se2(CIGS) thin film solar cells by ion beam sputtering with a chalcopyrite CIGS quaternary target. The films were fabricated with different beam currents. The thin films were characterized with X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDS), scanning electron microscopy (SEM) and hall effect-measurement system to study the microstructures, composition, surface morphology and electrical properties, respectively. Experimental results show that both the films are chalcopyrite structure, the Ga/(In+Ga) ratio, Cu/(In+Ga) ratio and Se/(Cu+In+Ga) ratio are decrease with the beam currents increase, the surfaces morphology of the films are dense, and the resistivity of the film deposited with the beam current of 40mA is 0.56Ωcm, with a carrier concentration of 4.11Χ1018cm-3and mobility of 2.73cm2V-1s-1. The resulting film exhibited p-type conductivity.

scholarly journals Obtaining and doping of InAs-QD/GaAs(001) nanostructures by ion beam sputtering

2017 ◽  
Vol 8 ◽  
pp. 12-20 ◽  
Author(s):  
Sergei N Chebotarev ◽  
Alexander S Pashchenko ◽  
Leonid S Lunin ◽  
Elena N Zhivotova ◽  
Georgy A Erimeev ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Ion Beam ◽  
Beam Current ◽  
Growth Direction ◽  
Ion Beam Sputtering ◽  
Inas Quantum Dots ◽  
Spacer Layer ◽  
Gaas Barrier ◽  
Beam Sputtering ◽  
Impurity Doping

The features of InAs quantum dots obtained on GaAs(001) single-crystal substrates by ion-beam sputtering were investigated. It has been shown that in the range of ion energies of 150 to 200 eV at a temperature of 500 °C and a beam current of 120 µA InAs quantum dots with average dimensions below 15 nm and a surface density of 1011 cm−2 are formed. The technique of controlled doping of InAs/GaAs nanostructures using a SnTe solid-state source was proposed. It has been established that a maximum donor concentration of 8.7·1018 cm−3 in the GaAs spacer layer is reached at an evaporation temperature of 415 °С. At the same time, impurity accumulation in the growth direction was observed. We have shown that increasing the impurity doping of the GaAs barrier layer increases the intensity of photoluminescence peaks of the ground state and the first excited state of the InAs quantum dots.

scholarly journals Morphology and Optical Investigations of InAs-QD/GaAs Heterostructures Obtained by Ion-Beam Sputtering

2016 ◽  
Vol 2016 ◽  
pp. 1-9 ◽  
Author(s):  
S. N. Chebotarev ◽  
A. S. Pashchenko ◽  
V. A. Irkha ◽  
M. L. Lunina
Keyword(s):  
Quantum Dots ◽  
Ion Beam ◽  
Beam Current ◽  
High Dispersion ◽  
Ion Beam Sputtering ◽  
Inas Quantum Dots ◽  
Atomic Force ◽  
Beam Sputtering ◽  
Very High ◽  
A Current

A new ion-beam sputtering technique for obtaining self-assembled InAs quantum dots on GaAs (001) substrates is proposed. The current paper demonstrates that a temperature increase in a range from 450 to 550°C at ion current of 120 μA and energy of 150 eV leads to an expansion of average sizes of InAshut-quantum dots. According to atomic force and electron microscopy, photoluminescence, and capacity-voltage measurements it was found that an increase of ion-beam current from 60 to 120 μA at a temperature of 500°C and energy of 150 eV slightly enlarges the average sizes of quantum dots from 15 nm to 18 nm while their dispersion is about 30%. At a current of 180 μA a surface density is1.3·1011 cm−2, but under these conditions there is a very high dispersion of quantum dots up to 50%.

Effects of O2 Ion Bombardment of Y-Ba-Cu-Oxide during Thin Film Growth

1989 ◽  
Vol 157 ◽  
Author(s):  
G. Metzger ◽  
C. B. Fleddermann
Keyword(s):  
Oxygen Content ◽  
Film Growth ◽  
Ion Beam ◽  
Optical Emission ◽  
Beam Current ◽  
Ion Beam Sputtering ◽  
Low Oxygen ◽  
Oxygen Ion ◽  
Beam Sputtering ◽  
Direct Incorporation

ABSTRACTOxygen ion beam bombardment has been studied as a means for incorporating oxygen into thin films of Y-Ba-Cu-oxide either by enhancing the transport of oxygen to substrates during ion-beam sputtering, or by direct incorporation of oxygen with ion-assisted deposition. Optical emission spectroscopy was used to study the ion-beam bombardment of bulk superconducting targets as the oxygen content of the ion beam was varied. This study showed that oxygen did not directly combine with metallic elements in the target to increase the oxygen content of the stream of particles moving toward the substrate. Addition of a second ion beam directing oxygen ions toward the substrate during film growth caused large variations in the stoichiometry of the deposited films. At low oxygen ion currents, no increase in the oxygen content of the films was detected, while at relatively high currents, the oxygen incorporation increased. However, the sputtering of the metallic components of the film increased as the oxygen beam current increased, leading to very low growth rates.

Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

1973 ◽  
Vol 31 ◽  
pp. 122-123
Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson
Keyword(s):  
Epitaxial Growth ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Microscopy Technique ◽  
Direct Observations ◽  
In Situ Electron Microscopy ◽  
Beam Sputtering ◽  
The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

TEM Study of Co/Pd and Co/Au Multilayers

1993 ◽  
Vol 51 ◽  
pp. 1036-1037
Author(s):  
A.E.M. De Veirman ◽  
F.J.G. Hakkens ◽  
W.M.J. Coene ◽  
F.J.A. den Broeder
Keyword(s):  
Magnetic Anisotropy ◽  
Ion Beam ◽  
Perpendicular Magnetic Anisotropy ◽  
Optical Recording ◽  
Magnetic Multilayer ◽  
Ion Beam Sputtering ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Substrate Temperatures

There is currently great interest in magnetic multilayer (ML) thin films (see e.g.), because they display some interesting magnetic properties. Co/Pd and Co/Au ML systems exhibit perpendicular magnetic anisotropy below certain Co layer thicknesses, which makes them candidates for applications in the field of magneto-optical recording. It has been found that the magnetic anisotropy of a particular system strongly depends on the preparation method (vapour deposition, sputtering, ion beam sputtering) as well as on the substrate, underlayer and deposition temperature. In order to get a better understanding of the correlation between microstructure and properties a thorough cross-sectional transmission electron microscopy (XTEM) study of vapour deposited Co/Pd and Co/Au (111) MLs was undertaken (for more detailed results see ref.).The Co/Pd films (with fixed Pd thickness of 2.2 nm) were deposited on mica substrates at substrate temperatures Ts of 20°C and 200°C, after prior deposition of a 100 nm Pd underlayer at 450°C.

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