Fabrication and Transport Properties of Te-Doped Bi Nanowire Arrays

1999 ◽  
Vol 582 ◽  
Author(s):  
Y. M. Lin ◽  
X. Sun ◽  
S. B. Cronin ◽  
Z. Zhang ◽  
J. Y. Ying ◽  
...  
Keyword(s):  
Theoretical Model ◽  
Band Structure ◽  
Temperature Dependence ◽  
Transport Properties ◽  
Nanowire Arrays ◽  
Injection Technique ◽  
Pressure Injection ◽  
Theoretical Predictions ◽  
Bi Nanowire ◽  
Anodic Alumina Templates

ABSTRACTTe-doped Bi nanowires with a 40 nm wire diameter have been successfully synthesized in anodic alumina templates by the pressure injection technique. Due to the unique semimetal-semiconductor transition that occurs in Bi nanowires, these systems exhibit a rather different temperature dependence in transport properties from their bulk counterparts. An improved theoretical model of this unique 1D nanowire system is developed based on the band structure of bulk bismuth. The temperature dependence of resistance for Bi nanowire arrays have been studied experimentally for various Te dopant concentrations and the results are compared with theoretical predictions.

Electronic Properties of Bismuth Nanowires

2001 ◽  
Vol 679 ◽  
Author(s):  
Stephen B. Cronin ◽  
Yu-Ming Lin ◽  
Oded Rabin ◽  
Marcie R. Black ◽  
Gene Dresselhaus ◽  
...  
Keyword(s):  
Theoretical Model ◽  
Band Structure ◽  
Temperature Dependence ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Temperature Dependent ◽  
Si Substrates ◽  
Bismuth Nanowires ◽  
Bi Nanowire ◽  
Anodic Alumina Templates

ABSTRACTThe pressure filling of anodic alumina templates with molten bismuth has been used to synthesize single crystalline bismuth nanowires with diameters ranging from 7 to 200nm and lengths of 50μm. The nanowires are separated by dissolving the template, and electrodes are affixed to single Bi nanowires on Si substrates. A focused ion beam (FIB) technique is used first to sputter off the oxide from the nanowires with a Ga ion beam and then to deposit Pt without breaking vacuum. The resistivity of a 200nm diameter Bi nanowire is found to be only slightly greater than the bulk value, while preliminary measurements indicate that the resistivity of a 100nm diameter nanowire is significantly larger than bulk. The temperature dependence of the resistivity of a 100nm nanowire is modeled by considering the temperature dependent band parameters and the quantized band structure of the nanowires. This theoretical model is consistent with the experimental results.

Thermoelectric Properties of Bi1-xSbx Nanowire Arrays

2001 ◽  
Vol 691 ◽  
Author(s):  
Yu-Ming Lin ◽  
Stephen B. Cronin ◽  
Oded Rabin ◽  
Jackie Y. Ying ◽  
Mildred S. Dresselhaus
Keyword(s):  
Theoretical Model ◽  
Band Structure ◽  
Seebeck Coefficient ◽  
Transport Property ◽  
Field Dependence ◽  
Nanowire Arrays ◽  
Temperature Dependent ◽  
Thermoelectric Transport ◽  
Alloy Nanowires ◽  
Different Diameters

ABSTRACTWe present here a thermoelectric transport property study of Bi1−xSbx alloy nanowires embedded in a dielectric matrix. Temperature-dependent resistance measurements exhibit nonmonotonic trends as the antimony mole fraction (x) increases, and a theoretical model is presented to explain the features that are related to the unusual band structure of Bi1−xSbx systems. Seebeck coefficient measurements are performed on nanowires with different diameters and compositions, showing enhanced thermopower over bulk Bi. The magneto-Seebeck coefficient of these nanowires also exhibits an unusual field dependence that is absent in bulk samples.

Transport properties of Bi nanowire arrays

2000 ◽  
Vol 76 (26) ◽  
pp. 3944-3946 ◽  
Author(s):  
Yu-Ming Lin ◽  
Stephen B. Cronin ◽  
Jackie Y. Ying ◽  
M. S. Dresselhaus ◽  
Joseph P. Heremans
Keyword(s):  
Transport Properties ◽  
Nanowire Arrays ◽  
Bi Nanowire

Thermopower of Bi Nanowire Array Composites.

2000 ◽  
Vol 626 ◽  
Author(s):  
T.E. Huber ◽  
M.J. Graf ◽  
C.A. Foss ◽  
P. Constant
Keyword(s):  
High Pressure ◽  
Seebeck Coefficient ◽  
Contact Resistance ◽  
Nanowire Array ◽  
High Mobility ◽  
Nanowire Arrays ◽  
Pressure Injection ◽  
Dense Arrays ◽  
Bi Nanowire ◽  
High Pressure Injection

The small effective mass and high mobility of electrons in Bi, make Bi nanowires a promising system for thermoelectric applications. Dense arrays of 20–200 nm diameter Bi nanowires were fabricated by high pressure injection of the melt. Transport properties and Seebeck coefficient were investigated for Bi nanowires with various wire diameters as a function of temperature (1 K < T < 300 K) and magnetic fields (B < 0.6 T). We discuss the problem of the contact resistance of Bi nanowire arrays.

Effect of Electron-Phonon Coupling on Transport Properties of Monolayers of ZrS2, BiI3 and PbI2: A thermoelectric Perspective

2021 ◽  
Author(s):  
Gautam Sharma ◽  
Vineet Kumar Pandey ◽  
Shouvik Datta ◽  
Prasenjit Ghosh
Keyword(s):  
Relaxation Time ◽  
Band Structure ◽  
Transport Properties ◽  
Thermoelectric Properties ◽  
Thermoelectric Materials ◽  
Waste Heat ◽  
Transport Coefficients ◽  
Electrical Energy ◽  
Phonon Coupling ◽  
Electron Phonon Coupling

Thermoelectric materials are used for conversion of waste heat to electrical energy. The transport coefficients that determine their thermoelectric properties depend on the band structure and the relaxation time of...

scholarly journals Electronic Band Structure and Transport Properties of the Cluster Compound Ag3Tl2Mo15Se19

2019 ◽  
Vol 58 (9) ◽  
pp. 5533-5542 ◽  
Author(s):  
Patrick Gougeon ◽  
Philippe Gall ◽  
Rabih Al Rahal Al Orabi ◽  
Benoit Boucher ◽  
Bruno Fontaine ◽  
...  
Keyword(s):  
Band Structure ◽  
Transport Properties ◽  
Electronic Band Structure ◽  
Cluster Compound ◽  
Electronic Band

A novel theoretical model for the temperature dependence of band gap energy in semiconductors

2017 ◽  
Vol 50 (40) ◽  
pp. 40LT02 ◽  
Author(s):  
Peiji Geng ◽  
Weiguo Li ◽  
Xianhe Zhang ◽  
Xuyao Zhang ◽  
Yong Deng ◽  
...  
Keyword(s):  
Theoretical Model ◽  
Temperature Dependence ◽  
Band Gap ◽  
Band Gap Energy ◽  
Gap Energy
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