Low Temperature Hydrogen Induced Degradation of (Ba,Sr)TiO3 Thin Film Capacitors

1999 ◽  
Vol 596 ◽  
Author(s):  
J. D. Baniecki ◽  
C. Parks ◽  
R. B. Laibowitz ◽  
T. M. Shaw ◽  
J. Lian ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Relaxation ◽  
Bottom Electrode ◽  
Electrical Characterization ◽  
Asymmetric Distribution ◽  
Leakage Currents ◽  
Metal Electrodes ◽  
Thin Film Capacitors ◽  
Electrode Interface ◽  
Secondary Ion

AbstractWe have used electrical characterization and secondary ion mass spectroscopy (SIMS) to investigate the influence of hydrogen or deuterium (H/D) on the degradation of the electrical properties of metal/Ba0.7Sr0.3TiO3/metal (M/BSTO/M) thin film capacitors after forming gas annealing (FGA). Leakage and dielectric relaxation currents increase after FGA at temperatures as low as 23C. SIMS profiling shows that at 23C H/D diffuses through thin film metal electrodes and accumulates at electrode interfaces. The location (top or bottom electrode interface) of H/D accumulation is dependent on the type of electrodes and capacitor structure. The resulting asymmetric distribution of H/D leads to large voltage offsets in the C-V characteristic, asymmetric leakage currents, and increased dielectric relaxation currents. Possible mechanisms for increased leakage and relaxation currents after FGA are discussed.

Contribution of electrodes and microstructures to the electrical properties of Pb(Zr0.53Ti0.47)O3 thin film capacitors

1994 ◽  
Vol 9 (11) ◽  
pp. 2968-2975 ◽  
Author(s):  
H.N. Al-Shareef ◽  
A.I. Kingon ◽  
X. Chen ◽  
K.R. Bellur ◽  
O. Auciello
Keyword(s):  
Thin Film ◽  
Electrode Material ◽  
Bottom Electrode ◽  
Low Voltage ◽  
Order Effect ◽  
Major Effect ◽  
Leakage Currents ◽  
Ohmic Behavior ◽  
Thin Film Capacitors ◽  
Pzt Thin Film

Pb(Zr0.53Ti0.47)O3 (PZT) thin film capacitors have been fabricated with four electrode combinations: Pt/PZT/Pt/SiO2Si, RuO2/PZT/Pt/SiO2/Si, RuO2/PZT/RuO2/SiO2/Si, and Pt/PZT/RuO2/SiO2/Si. It is shown that polarization fatigue is determined largely by the electrode type (Pt vs RuO2), and microstructure has only a second-order effect on fatigue. If either the top or bottom electrode is platinum, significant polarization fatigue occurs. Fatigue-free capacitors are obtained only when both electrodes are RuO2. In contrast, the bottom electrode is found to have a major effect on the leakage characteristics of the PZT capacitors, presumably via microstructural modifications. Capacitors with bottom RuO2 electrodes show high leakage currents (J = 10−3-10−5 A/cm2 at 1 V) irrespective of the top electrode material. Capacitors with Pt bottom electrodes have much lower leakage currents (J = 10−8 A/cm2 at 1 V) irrespective of the top electrode material. At low voltage, the I-V curves show ohmic behavior and negligible polarity dependence for all capacitor types. At higher voltages, the leakage current is probably Schottky emission controlled for the capacitors with Pt bottom electrodes.

scholarly journals Synchrotron X-ray Microdiffraction Images of Polarization Switching in Epitaxial PZT Capacitors with Pt and SrRuO3 Top Electrodes

2003 ◽  
Vol 784 ◽  
Author(s):  
Dal-Hyun Do ◽  
Dong Min Kim ◽  
Chang-Beom Eom ◽  
Eric M. Dufresne ◽  
Eric D. Isaacs ◽  
...  
Keyword(s):  
Thin Film ◽  
Bottom Electrode ◽  
Sputter Deposition ◽  
Ferroelectric Polarization ◽  
X Rays ◽  
X Ray ◽  
Pzt Film ◽  
Thin Film Capacitors ◽  
Pzt Thin Film ◽  
Switchable Polarization

ABSTRACTThe evolution of stored ferroelectric polarization in PZT thin film capacitors was imaged using synchrotron x-ray microdiffraction with a submicron-diameter focused incident x-ray beam. To form the capacitors, an epitaxial Pb(Zr,Ti)O3 (PZT) thin film was deposited on an epitaxially-grown conductive SrRuO3 (SRO) bottom electrode on a SrTiO3 (STO) (001) substrate. Polycrystalline SRO or Pt top electrodes were prepared by sputter deposition through a shadow mask and subsequent annealing. The intensity of x-ray reflections from the PZT film depended on the local ferroelectric polarization. With 10 keV x-rays, regions of opposite polarization differed in intensity by 26% in our PZT capacitor with an SRO top electrode. Devices with SRO electrodes showed just a 25% decrease in the remnant polarization after 107 switching cycles. In devices with Pt top electrodes, however, the switchable polarization decreased a by 70% after only 5×104 cycles.

Electromechanical Properties of Pb(Mg1/3Nb2/3)O3 Thin Film Capacitors

1998 ◽  
Vol 541 ◽  
Author(s):  
G. Catalan ◽  
M.H. Corbett ◽  
R.M. Bowman ◽  
J.M. Gregg
Keyword(s):  
Thin Film ◽  
Compressive Strain ◽  
X Ray Diffraction ◽  
Leakage Currents ◽  
Plan View ◽  
X Ray ◽  
Thin Film Capacitors ◽  
Transmission Electron ◽  
Tensile Strains

AbstractPulsed Laser Deposition was used to grow Pb(Mg1/3Nb2/3)O3 (PMN) thin film planar capacitor structures. PMN crystallography was verified by x-ray diffraction and plan-view Transmission Electron Microscopy (TEM). Capacitance of the thin film structures was measured as a function of temperature and frequency. Leakage current was also measured for each capacitor. A DC field was subsequently applied and crystallographic strain was monitored in-situ by X-ray diffraction. The electromechanical strain was found to strongly depend on the deposition conditions for each capacitor. Tensile strains of ∼0.2% and compressive strains of ∼0.3% parallel to the applied field were measured for capacitors of different oxygen contents and thicknesses. We propose that the compressive strain is caused by the combined effect of joule heating of the capacitor structure, caused by large leakage currents, and epitaxial coupling between substrate and films. Electrostrictive tensile strains are of the same order as observed inbulk.

Oxygen-related dielectric relaxation and leakage characteristics of Pt/(Ba,Sr)TiO3/Pt thin-film capacitors

2002 ◽  
Vol 80 (14) ◽  
pp. 2538-2540 ◽  
Author(s):  
Mingrong Shen ◽  
Zhenggao Dong ◽  
Zhaoqiang Gan ◽  
Shuibing Ge ◽  
Wenwu Cao
Keyword(s):  
Thin Film ◽  
Dielectric Relaxation ◽  
Thin Film Capacitors ◽  
Leakage Characteristics

Low-frequency dielectric relaxation of BaTiO3 thin-film capacitors

1999 ◽  
Vol 75 (12) ◽  
pp. 1784-1786 ◽  
Author(s):  
Su-Jae Lee ◽  
Kwang-Yong Kang ◽  
Seok-Kil Han
Keyword(s):  
Thin Film ◽  
Dielectric Relaxation ◽  
Low Frequency ◽  
Thin Film Capacitors ◽  
Batio3 Thin Film

Behavior of Hydrogen Atoms in Perovskite-Type Oxide Thin Films under Electric Fields

2009 ◽  
Vol 421-422 ◽  
pp. 281-284 ◽  
Author(s):  
Kentaro Morito ◽  
Toshimasa Suzuki ◽  
Youichi Mizuno ◽  
Isao Sakaguchi ◽  
Naoki Ohashi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electric Fields ◽  
Mass Spectroscopy ◽  
Hydrogen Atoms ◽  
Perovskite Type Oxide ◽  
Thin Film Capacitors ◽  
Bst Thin Film ◽  
Secondary Ion ◽  
Perovskite Type

The behavior of hydrogen in (Ba,Sr)TiO3 (BST) thin film capacitors under electric fields was investigated by performing secondary ion mass spectroscopy (SIMS) analyses. It was clearly observed that the ingress of atmospheric hydrogen into BST thin film capacitors occurred through the anode and that it diffused toward the cathode under electric fields. In addition, it was found that the deterioration of the I-V properties of the BST thin film capacitors can be interpreted in terms of the distribution of hydrogen concentration in the BST thin films.

Electrical Properties of Ferroelectric Thin Film Capacitors with Different Structures

1992 ◽  
Vol 284 ◽  
Author(s):  
Q. X. Jia ◽  
J. Yi ◽  
Z. Q. Shi ◽  
K. K. Ho ◽  
L. H. Chang ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Bottom Electrode ◽  
Single Layer ◽  
Ferroelectric Thin Film ◽  
Rf Magnetron Sputtering ◽  
Metallic Oxide ◽  
Cross Sectional ◽  
Thin Film Capacitors ◽  
Scanning Electron

ABSTRACTFerroelectric BaTiO3 thin film capacitors were fabricated using different designs. Silicon wafers with an oxide layer were used as the substrates. Conductive metallic oxide of RuO2 was reactively sputtered on SiO2/Si as a bottom electrode. The BaTiO3 thin films with a thickness in the range of 150–300nm were deposited by RF magnetron sputtering. Different capacitor structures, including single layer amorphous, single layer polycrys-talline, and bi-layer amorphous on polycrystalline, were investigated in this study. The clear interface between BaTiO3 and RuO2 as demonstrated by cross-sectional scanning electron microscopy implies little interdiffusion. The DC conducticity of a film with a thickness of around 200nm was as low as 1×10−13OHgr-cm at 4V. The dielectric constant of the composite structure was controlled in a range from 30 to 130. Breakdown voltage varied from 5×105V/cm to 1×106V/cm.

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