Thickness Dependence and Electrical Properties of Ultrathin PZT Films Grown on SrRuO3/SrTiO3 by MOCVD

1999 ◽  
Vol 596 ◽  
Author(s):  
M. Shimizu ◽  
H. Fujisawa ◽  
H. Niu
Keyword(s):  
Film Thickness ◽  
Vapor Deposition ◽  
Applied Voltage ◽  
Metalorganic Chemical Vapor Deposition ◽  
Hysteresis Loops ◽  
Chemical Vapor ◽  
Pzt Film ◽  
Polarization Density ◽  
Pzt Films ◽  
Ferroelectric Hysteresis

AbstractEpitaxial Pb(Zr,Ti)O3 (PZT) thin films with various thicknesses ranging from 40 to 400nm were prepared on SrRuO3/SrTiO3 by metalorganic chemical vapor deposition (MOCVD). The dependence of lattice constant on the film thickness and temperature was examined. The PZT films obtained showed ferroelectric hysteresis loops even when film thickness was 40nm. Applied voltage for obtaining high polarization density decreased as film thickness decreased. The 40nm-thick PZT film had the polarization density (Pr) of 38mC/cm2 at an applied voltage (Vc) of 0.7V.

Dominant Factor of Squareness in P-E Hsyteresis Loops of MOCVD-PZT Films

2005 ◽  
Vol 902 ◽  
Author(s):  
Hiroshi Funakubo ◽  
Akihiro Sumi ◽  
Hitoshi Morioka ◽  
Shoji Okamoto ◽  
Shintaro Yokoyama
Keyword(s):  
Film Thickness ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Metalorganic Chemical Vapor Deposition ◽  
Remanent Polarization ◽  
Chemical Vapor ◽  
Dominant Factor ◽  
Saturation Polarization ◽  
Pzt Films ◽  
Lower Temperature

AbstractThe effects of P-E properties of epitaxially grown rhombohedral Pb(Zr,Ti)O3 film on the film thickness and temperature were systematically investigated. (100)-oriented rhombohedral Pb(Zr0.65Ti0.35)O3 films with 50 - 3200 nm in thickness were grown on (100)cSrRuO3//(100)SrTiO3 substrates by metalorganic chemical vapor deposition (MOCVD). The ratio of the remanent polarization (Pr) to saturation polarization (Psat), the Pr/Psat ratio, at room temperature decreased with decreasing the film thickness. Moreover, the Pr/Psat ratio at 10 K of 180-nm-thick films was smaller than that of 3200-nm-thick film and dropped at lower temperature with increasing the film thickness. These results suggest that the small Pr/Psat ratio of thin film at room temperature is originated to both of small Pr/Psat ratio even at 10K and their drop starting at lower temperature when the temperature increased.

Ferroelectric Properties of 15–20nm-Thick PZT Ultrathin Films Prepared by MOCVD

2002 ◽  
Vol 748 ◽  
Author(s):  
H. Nonomura ◽  
H. Fujisawa ◽  
M. Shimizu ◽  
H. Niu ◽  
K. Honda
Keyword(s):  
Electric Fields ◽  
Vapor Deposition ◽  
Ultrathin Films ◽  
Metalorganic Chemical Vapor Deposition ◽  
Bottom Electrode ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Chemical Vapor ◽  
Pzt Films ◽  
Large Leakage Current

ABSTRACTWe investigated ferroelectric properties of 20nm-thick epitaxial Pb(Zr,Ti)O3 (PZT) ultrathin films prepared on SrRuO3 (SRO)/SrTiO3 (STO) by metalorganic chemical vapor deposition (MOCVD). When SRO with terrace ledges was used as a bottom electrode, 20nm-thick PZT ultrathin films with ferroelectricity were successfully obtained. These PZT films exhibited saturated hysteresis loops with remanent polarizations (Pr) of 29–33 μC/cm2 and coercive electric fields (Ec) of 340–370 kV/cm. On the other hand, when PZT films were grown on SRO without terrace ledges, PZT films showed no saturated hysteresis loops because of large leakage current. The 15nm-thick PZT ultrathin film exhibiting unsaturated hysteresis loop was also obtained.

Crystal structure and microstructure of epitaxial Pb(Zr,Ti)O3 films consisting of mixed phases with tetragonal and rhombohedral symmetries grown on (100)cSrRuO3//(100)SrTiO3 substrate by metalorganic chemical vapor deposition

2007 ◽  
Vol 22 (6) ◽  
pp. 1551-1557 ◽  
Author(s):  
Shintaro Yokoyama ◽  
Hitoshi Morioka ◽  
Yong Kwan Kim ◽  
Hiroshi Nakaki ◽  
Hiroshi Funakubo ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Chemical Vapor Deposition ◽  
Film Thickness ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Relative Volume Fraction ◽  
Bottom Region ◽  
Structure And Microstructure ◽  
Metalorganic Chemical

(100)-/(001)-oriented epitaxial Pb(Zr,Ti)O3(PZT) films with various Zr/(Zr + Ti) ratios and film thicknesses were grown on (100)cSrRuO3//(100)SrTiO3substrates at 600 °C by metalorganic chemical vapor deposition. Their crystal structure and microstructure consisting of particularly mixed phases with tetragonal and rhombohedral symmetries were investigated in detail. Films with the mixed phases with tetragonal and rhombohedral symmetries were ascertained at a Zr/(Zr + Ti) ratio of around 0.50 at a thickness of more than 200 nm from x-ray diffraction (XRD) analysis, while no mixed phase region was observed for 50 nm thick film. The relative volume fraction of the tetragonal cdomain decreased with increasing film thickness for 2-μm-thick films with mixed phases, while the tetragonal adomain and rhombohedral domain increased. These mixed phases were ascertained to have originated from the same cubic PZT grown above Curie temperature from results obtained by temperature-dependent high-resolution XRD reciprocal space mapping. The transmission electron microscopy images clearly revealed that the microstructure of the film gradually changed along the film thickness, despite the fact that the film was very uniform. Tetragonal phases were dominant in the bottom region (near the interface with the substrate) of the film, while rhombohedral phase was dominant in the upper region (near the surface), which was also ascertained by cross-sectional Raman analysis. In addition, the tetragonal a/cdomain was wider in the bottom region than that in the upper region of film with mixed phases. These data clearly demonstrate that both the crystal structure and microstructure changed along the film thickness.

Optical Characterization and Mapping of Four INCH InSb Epitaxial thin Films Grown on GaAs by Turbo Disk Metalorganic Chemical Vapor Deposition

1996 ◽  
Vol 450 ◽  
Author(s):  
Z. C. Feng ◽  
C. Beckham ◽  
P. Schumaker ◽  
I. Ferguson ◽  
R. A. Stall ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Film Thickness ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Growth Parameters ◽  
Thickness Distribution ◽  
Chemical Vapor ◽  
Crystalline Quality ◽  
Large Area ◽  
Metalorganic Chemical

ABSTRACTA large number of 4 inch (100 mm) diameter 1–2 μm thick InSb films have been grown on GaAs by low pressure metalorganic chemical vapor deposition (MOCVD) turbo disk technology. Raman scattering microscopy was used to study the effects of III-V source ratios on the film crystalline quality and to optimize the growth parameters. Multi-point Raman measurements over the entire 4” wafer were performed to exhibit the uniformity distribution of the film crystalline quality. A FTIR reflectance mapping system has been established to map the film thickness distribution. Good uniformity of the film thickness and crystalline perfection was obtained. Raman and FTIR are showing useful tools for non-destructive characterization of large area wafers for industrial mass production.

Characteristic Comparison Of Epitaxial PZT And PMN-PT Films Grown On (100)cSrRuO3//(100)SrTiO3 Substrates By Metalorganic Chemical Vapor Deposition

2005 ◽  
Vol 902 ◽  
Author(s):  
Shintaro Yokoyama ◽  
Satoshi Okamoto ◽  
Keisuke Saito ◽  
Takashi Iijima ◽  
Hirotake Okino ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Single Phase ◽  
Chemical Vapor ◽  
Phase Region ◽  
Bulk Materials ◽  
Mixture Phase ◽  
Pzt Films ◽  
Pt Films ◽  
Mixed Phase Region

AbstractWe grew the epitaxial Pb(Zr1-xTix)O3 [PZT] and (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 [PMN-PT] films, above 2 μm in thickness, on (100)cSrRuO3//(100)SrTiO3 substrates by metalorganic chemical vapor deposition (MOCVD). PbTiO3 content (x) dependencies of the crystal structure, dielectric and piezoelectric properties were systematically investigated for these films. The constituent phase changed from a rhombohedral (pseudocubic) single phase, a mixture phase of rhombohedral (pseudocubic) and tetragonal phases, and a tetragonal single phase with increasing x for both of PZT and PMN-PT films. The mixture phase region was observed when x=0.40−0.60 for PZT films and x=0.40−0.55 for PMN-PT films, which became wider than that reported ones for PZT sintered bodies and PMN-PT single crystals. In addition, x value moves to the higher one than that reported for the single crystal and/or the sintered body in case of PMN-PT films, while was almost the same in case of PZT films. The dependence of relative dielectric constant εr was maximum at the mixed phase region for both films, which were similar to the case of their bulk materials. The higher value of εr was ascertained for the PMN-PT films compared with PZT films, however, the magnitude was lower than the reported one for bulk materials. The longitudinal electric-field-induced strain Δx33 and transverse piezoelectric coefficient e31,f for PZT films were also maximum at the mixed phase region, on the other hand, that for PMN-PT films were maximum at larger x edge of rhombohedral (pseudocubic) region. Almost the same order of Δx33 was observed under applied electric fields up to 100 kV/cm, while larger e31,f was observed in PMN-PT films compared with the case of PZT films. e31,f coefficients of ∼−8.9 C/m2 and ∼−11.0 C/m2 were calculated for the PZT film with x=0.46 and for the PMN-PT film with x=0.39, respectively.

Ferroelectric Properties of a-Axis Textured BaTiO3 Thin Films

1993 ◽  
Vol 310 ◽  
Author(s):  
H. A. Lu ◽  
L. A. Wills ◽  
B. W. Wessels ◽  
X. Zhan ◽  
J. A. Helfrich ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Dielectric Properties ◽  
Electric Field ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Ferroelectric Properties ◽  
Chemical Vapor ◽  
Ferroelectric Hysteresis ◽  
Metalorganic Chemical

AbstractFerroelectric and dielectric properties were measured for BaTiO3 thin films prepared by metalorganic chemical vapor deposition which were highly a-axis textured. No ferroelectric hysteresis was observed from the as-deposited BaTiO3 films on Pt coated MgO. Upon applying an electric field exceeding a threshold electric field, Et, ∼ 50 - 100 kV/cm, a ferroelectric hysteresis was observed. A spontaneous polarization Ps ≥ 15 μC/cm2 was measured for the textured films.

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