Characteristic Comparison Of Epitaxial PZT And PMN-PT Films Grown On (100)cSrRuO3//(100)SrTiO3 Substrates By Metalorganic Chemical Vapor Deposition

2005 ◽  
Vol 902 ◽  
Author(s):  
Shintaro Yokoyama ◽  
Satoshi Okamoto ◽  
Keisuke Saito ◽  
Takashi Iijima ◽  
Hirotake Okino ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Single Phase ◽  
Chemical Vapor ◽  
Phase Region ◽  
Bulk Materials ◽  
Mixture Phase ◽  
Pzt Films ◽  
Pt Films ◽  
Mixed Phase Region

AbstractWe grew the epitaxial Pb(Zr1-xTix)O3 [PZT] and (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 [PMN-PT] films, above 2 μm in thickness, on (100)cSrRuO3//(100)SrTiO3 substrates by metalorganic chemical vapor deposition (MOCVD). PbTiO3 content (x) dependencies of the crystal structure, dielectric and piezoelectric properties were systematically investigated for these films. The constituent phase changed from a rhombohedral (pseudocubic) single phase, a mixture phase of rhombohedral (pseudocubic) and tetragonal phases, and a tetragonal single phase with increasing x for both of PZT and PMN-PT films. The mixture phase region was observed when x=0.40−0.60 for PZT films and x=0.40−0.55 for PMN-PT films, which became wider than that reported ones for PZT sintered bodies and PMN-PT single crystals. In addition, x value moves to the higher one than that reported for the single crystal and/or the sintered body in case of PMN-PT films, while was almost the same in case of PZT films. The dependence of relative dielectric constant εr was maximum at the mixed phase region for both films, which were similar to the case of their bulk materials. The higher value of εr was ascertained for the PMN-PT films compared with PZT films, however, the magnitude was lower than the reported one for bulk materials. The longitudinal electric-field-induced strain Δx33 and transverse piezoelectric coefficient e31,f for PZT films were also maximum at the mixed phase region, on the other hand, that for PMN-PT films were maximum at larger x edge of rhombohedral (pseudocubic) region. Almost the same order of Δx33 was observed under applied electric fields up to 100 kV/cm, while larger e31,f was observed in PMN-PT films compared with the case of PZT films. e31,f coefficients of ∼−8.9 C/m2 and ∼−11.0 C/m2 were calculated for the PZT film with x=0.46 and for the PMN-PT film with x=0.39, respectively.

Detection and Analysis of Phase Separation in Metalorganic Chemical Vapor Deposition InGaN

1997 ◽  
Vol 482 ◽  
Author(s):  
E. L. Piner ◽  
N. A. El-Masry ◽  
S. X. Liu ◽  
S. M. Bedair
Keyword(s):  
Chemical Vapor Deposition ◽  
Phase Separation ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Single Phase ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Metalorganic Chemical

AbstractInGaN films in the 0–50% InN composition range have been analyzed for the occurrence of phase separation. The ñ0.5 jum thick InGaN films were grown by metalorganic chemical vapor deposition (MOCVD) in the 690 to 780°C temperature range and analyzed by θ−20 x-ray diffraction (XRD), transmission electron microscopy (TEM), and selected area diffraction (SAD). As-grown films with up to 21% InN were single phase. However, for films with 28% InN and higher, the samples showed a spinodally decomposed microstructure as confirmed by TEM and extra spots in SAD patterns that corresponded to multiphase InGaN. An explanation of the data based on the GaN-InN pseudo-binary phase diagram is discussed.

Thickness Dependence and Electrical Properties of Ultrathin PZT Films Grown on SrRuO3/SrTiO3 by MOCVD

1999 ◽  
Vol 596 ◽  
Author(s):  
M. Shimizu ◽  
H. Fujisawa ◽  
H. Niu
Keyword(s):  
Film Thickness ◽  
Vapor Deposition ◽  
Applied Voltage ◽  
Metalorganic Chemical Vapor Deposition ◽  
Hysteresis Loops ◽  
Chemical Vapor ◽  
Pzt Film ◽  
Polarization Density ◽  
Pzt Films ◽  
Ferroelectric Hysteresis

AbstractEpitaxial Pb(Zr,Ti)O3 (PZT) thin films with various thicknesses ranging from 40 to 400nm were prepared on SrRuO3/SrTiO3 by metalorganic chemical vapor deposition (MOCVD). The dependence of lattice constant on the film thickness and temperature was examined. The PZT films obtained showed ferroelectric hysteresis loops even when film thickness was 40nm. Applied voltage for obtaining high polarization density decreased as film thickness decreased. The 40nm-thick PZT film had the polarization density (Pr) of 38mC/cm2 at an applied voltage (Vc) of 0.7V.

scholarly journals CuPt-B Ordered Microstructures in GaInP and GaInAs Films

1999 ◽  
Vol 583 ◽  
Author(s):  
S. P. Ahrenkiel ◽  
K. M. Jones ◽  
R. J. Matson ◽  
M. M. Al-Jassim ◽  
Y. Zhang ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Single Phase ◽  
Chemical Vapor ◽  
Diffraction Theory ◽  
Growth Conditions ◽  
Dark Field ◽  
Antiphase Boundaries ◽  
Transmission Electron ◽  
Ordered Microstructures

AbstractWe examine CuPt-B atomic sublattice ordering in Ga0.51In0.49P (GaInP) and Ga0.47In0.53As (GaInAs) III-V alloy films grown by atmospheric- and low-pressure metalorganic chemical vapor deposition on singular and vicinal (001) substrates. The influences of growth conditions and substrate miscut on double- and single-variant ordered microstructures are investigated using transmission electron microscopy (TEM). Relatively thick (>1–2 litm) double-variant ordered GalnP and GaInAs films show complementary superdomain formation. Single-variant ordered films on <111>B-miscut substrates contain single-phase domains, separated by antiphase boundaries (APBs). The appearance of APBs in TEM dark-field images is anticipated from electron diffraction theory.

A Novel Ruthenium Precursor for MOCVD without Seed Ruthenium Layer

2002 ◽  
Vol 748 ◽  
Author(s):  
Tetsuo Shibutami ◽  
Kazuhisa Kawano ◽  
Noriaki Oshima ◽  
Shintaro Yokoyama ◽  
Hiroshi Funakubo
Keyword(s):  
Vapor Deposition ◽  
Deposition Temperature ◽  
Metalorganic Chemical Vapor Deposition ◽  
Single Phase ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Decomposition Temperature ◽  
Liquid Precursor ◽  
Si Substrates ◽  
Initial Nucleation

ABSTRACTRuthenium thin films were deposited on SiO2/Si substrates at 275 – 400 °C by metalorganic chemical vapor deposition (MOCVD) using liquid precursor (2.4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium [Ru(DMPD)(EtCp) DMPD: 2.4-dimethylpentadienyl EtCp: etylcyclopentadienyl]. Deposition characteristics of the films were compared with those using bis(ethylcyclopentadienyl)ruthenium.The decomposition temperature of Ru(DMPD)(EtCp) was 80 °C lower than Ru(EtCp)2. Both films consisted of Ru single phase for all deposition temperature range and showed an resistivity bellow 20 μΩcm for the films deposited above 300 °C. The initial nucleation of Ru films from Ru(DMPD)(EtCp) precursor was smaller in size and denser than that from Ru(EtCp)2. The deposition process from Ru(DMPD)(EtCp) has much shorter incubation time than that from Ru(EtCp)2.

Preparation of SrRuO3 and CaRuO3 Films by Mocvd and its Application to Electrodes for Ferroelectric Thin Films

1999 ◽  
Vol 596 ◽  
Author(s):  
N Okuda ◽  
N Higashi ◽  
K Ishikawa ◽  
N Nukaga ◽  
H Funakubo
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Single Phase ◽  
Chemical Vapor ◽  
Crystal Perfection ◽  
Oriented Films ◽  
Thin Film Preparation ◽  
Film Preparation ◽  
Source Materials

AbstractSrRuO3 and CaRuO3 thin films were successfully prepared by metalorganic chemical vapor deposition (MOCVD). Sr(C11H19O2)2(C8H23N5)x – Ru(C11H19O2)3–O2 and Sr(C11H19O2)2(C8H23N5)x. – Ru[(C5H4)(C2H5)]2 - O2 systems, and Ca(C11H19O2)2(C8H23N5)x, – Ru(C11H19O2)3–O2 and Ca(C11 H19O2)2(C8H23N5)x – Ru[(C5H4)(C2H5)]2– O2 systems were used as source materials for SrRuO3 and CaRuO3 thin film preparation, respectively. Sr and Ca source vapors were successfully obtained by bubbling N2 gas including C8H23N5 vapor through liquid sources. Self-composition limiting to keep single phase of SrRuO3 and CaRuO3 was observed under an excess input of the Ru source at 700 – 750 °C for both Ru sources. Epitaxlly grown films with high crystal perfection were grown on various kinds of substrates in this temperature range. Epitaxially grown SrRuO3 film with three kinds of orientation, (100), (110) and (111), were deposited on (100), (110) and (111)SrTiO3 substrates, respectively. By using these films as bottom electrodes, we measured the ferroelectric anisotropy of SrBi2Ta2O9 by preparing (001)- and (116)- oriented films.

Step Coverage and Composition of Pb(Zr, Ti)O3 Capacitors Prepared on Sub-Micron Three-Dimensional Trench Structure by Metalorganic Chemical Vapor Deposition

2004 ◽  
Vol 830 ◽  
Author(s):  
Atsushi Nagai ◽  
Gouji Asano ◽  
Jun Minamidate ◽  
Chel Jong Choi ◽  
Choong-Rae Cho ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Arrhenius Plot ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Step Coverage ◽  
Pzt Films ◽  
Trench Structure ◽  
Metalorganic Chemical

ABSTRACTPb(Zr, Ti)O3 (PZT) films were deposited into sub-micron trench structure consisting of SiO2/TiAlN/Ti/SiO2/Si to investigate their thickness and composition conformality by pulsed-metalorganic chemical vapor deposition (MOCVD) using liquid delivery source-supply system. Bis(dipivaloylmethanato)lead [Pb(DPM)2], tetrakis(1-methoxy-2-methyl-2-propoxy)zirconium [Zr(MMP)4] and tetrakis(1-methoxy-2-methyl-2-propoxy)titanium [Ti(MMP)4] were used as Pb, Zr and Ti source materials, respectively. In Arrhenius plot, the slopes of the straight lines for the constituents Pb, Zr and Ti in PZT film were almost the same at a lower deposition temperature (Td) region as well as a higher Td one. This means the composition change in the film against the Td can be suppressed by using Pb(DPM)2-Zr(MMP)4-Ti(MMP)4-O2 source system. From the results of Arrhenius plot, the Tds were fixed on 450 and 540°C as lower and higher temperatures, respectively. At both Tds, the sidewall-bottom step coverage (SCs-b) was approximately 70 %, while the sidewall step coverage (SCsw) reached excellent values above 90 %. It is suggested that low SCs-b value was caused by crystallization of the PZT films at the bottom of the trench because underlayer of the film at this area was not SiO2 but crystalline TiAlN. On the other hand, no significant composition fluctuation was observed along the depth direction of the sidewall. These results mean that the film deposited at 540°C had almost the same level in terms of thickness and composition conformality as that deposited at 450°C.

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