Observations of Domain Structure at Initial Growth Stage of PbTiO3 Thin Films Grown by Mocvd

1999 ◽  
Vol 596 ◽  
Author(s):  
H. Fujisawa ◽  
M. Shimizu ◽  
H. Niu ◽  
K. Honda ◽  
S Ohtani
Keyword(s):  
Thin Films ◽  
Domain Structure ◽  
Growth Stage ◽  
Domain Walls ◽  
Chemical Vapor ◽  
Initial Growth ◽  
Continuous Film ◽  
Cross Sectional ◽  
Initial Growth Stage ◽  
Transmission Electron

AbstractDomain structure and growth mechanism of PbTiO3 thin films were investigated using a transmission electron microscopy(TEM) from the viewpoint of size effects. At initial growth stage of (111)-oriented PbTiO3 films prepared by metalorganic chemical vapor deposition(MOCVD), triangle-shaped islands were grown on Pt(111)/SiO2/Si before becoming a continuous film. Triangular islands grew gradually in a lateral dimension. This means that PbTiO3 films grew two-dimensionally at initial growth stage. In cross-sectional TEM photomicrographs, (101)-twin boundaries (90° domain walls) and inclination of {110} or {101}-plane were observed in PbTiO3 islands. This result indicates that such small PbTiO3 islands have a tetragonal structure and could have spontaneous polarization. The minimum island which had 90° domain walls was 10nm high and 18nm wide.

Observations of initial growth stage of epitaxial Pb(Zr,Ti)O3 thin films on SrTiO3(100) substrate by MOCVD

2002 ◽  
Vol 237-239 ◽  
pp. 459-463 ◽  
Author(s):  
Hironori Fujisawa ◽  
Hajime Nonomura ◽  
Masaru Shimizu ◽  
Hirohiko Niu
Keyword(s):  
Thin Films ◽  
Growth Stage ◽  
Initial Growth ◽  
Initial Growth Stage

scholarly journals Structural Property Study for GeSn Thin Films

Materials ◽  
2020 ◽  
Vol 13 (16) ◽  
pp. 3645
Author(s):  
Liyao Zhang ◽  
Yuxin Song ◽  
Nils von den Driesch ◽  
Zhenpu Zhang ◽  
Dan Buca ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Threading Dislocations ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

The structural properties of GeSn thin films with different Sn concentrations and thicknesses grown on Ge (001) by molecular beam epitaxy (MBE) and on Ge-buffered Si (001) wafers by chemical vapor deposition (CVD) were analyzed through high resolution X-ray diffraction and cross-sectional transmission electron microscopy. Two-dimensional reciprocal space maps around the asymmetric (224) reflection were collected by X-ray diffraction for both the whole structures and the GeSn epilayers. The broadenings of the features of the GeSn epilayers with different relaxations in the ω direction, along the ω-2θ direction and parallel to the surface were investigated. The dislocations were identified by transmission electron microscopy. Threading dislocations were found in MBE grown GeSn layers, but not in the CVD grown ones. The point defects and dislocations were two possible reasons for the poor optical properties in the GeSn alloys grown by MBE.

TEM Study of Coherently Tilted YBa2Cu3O7-δ Thin Films on (305) SrTiO3 Substrates

1998 ◽  
Vol 12 (29n31) ◽  
pp. 3342-3344
Author(s):  
Y. Yang ◽  
J. Gao
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Growth Stage ◽  
Substrate Surface ◽  
Single Domain ◽  
Initial Growth ◽  
Ybco Films ◽  
Microstructural Study ◽  
Initial Growth Stage ◽  
Axis Parallel

Microstructural study has been carried out on the YBa2Cu3O 7-δ (YBCO) thin films grown on (305) SrTiO3 (STO) substrates. The results show that the YBCO films are coherently tilted with the c-axis parallel to the [001] direction of STO. Small antidomains are nucleated at the initial growth stage. When the film thickness increases, antidomains disappear leading to the formation of single domain thin films. Some particles are observed above the defective substrate surface, but the film with the favorable orientation suppresses their further growth.

Heteroepitaxial Bi2Sr2CaCu2Ox Superconducting thin films Deposited on LaA1O3 by Solid Phase Epitaxy and OMCVD

1992 ◽  
Vol 275 ◽  
Author(s):  
J. Chen ◽  
H. A. Lu ◽  
F. DiMeo ◽  
B. W. Wessels ◽  
D. L. Schulz ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Chemical Vapor ◽  
Superconducting Thin Films ◽  
Epitaxial Thin Films ◽  
Solid Phase Epitaxy ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Film Substrate

ABSTRACT-Heteroepitaxial superconducting Bi,Sr2CaCu2Ox (BSCCO 2212) thin films have been formed by solid phase epitaxy from amorphous films deposited on (100) LaA1O3 single crystal substrates by organometallic chemical vapor deposition. The epitaxial structure of the film is confirmed by x-ray diffraction including θ/2θ and Φ (in plane rotation) scans. Cross-sectional high resolution transmission electron microscopy indicates that the film-substrate interface is nearly atomically abrupt. Improvements in superconducting properties of the epitaxial thin films are noted in comparison to highly textured films deposited on MgO.

Control of grain size by initial growth stage of YBCO thin films

2002 ◽  
Vol 378-381 ◽  
pp. 1232-1235 ◽  
Author(s):  
M Mukaida ◽  
S Sato ◽  
Y Takano ◽  
M Kusunoki ◽  
S Ohshima
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Growth Stage ◽  
Initial Growth ◽  
Initial Growth Stage ◽  
Ybco Thin Films

ISS-AES study of the initial growth stage of Cu thin films on Si(111)7 × 7

1991 ◽  
Vol 48-49 ◽  
pp. 361-365 ◽  
Author(s):  
Itsuo Katayama ◽  
Teruo Hanawa ◽  
Fumiya Shoji ◽  
Kenjiro Oura
Keyword(s):  
Thin Films ◽  
Growth Stage ◽  
Initial Growth ◽  
Initial Growth Stage

scholarly journals The Consideration on The Initial Growth Stage of Sputtered Ag Thin Films Observed by Ellipsometry

2002 ◽  
Vol 122 (8) ◽  
pp. 755-760 ◽  
Author(s):  
Hidehiko Shimizu ◽  
Yoichi Hoshi ◽  
Shuichi Kawabata
Keyword(s):  
Thin Films ◽  
Growth Stage ◽  
Initial Growth ◽  
Initial Growth Stage

Cross-Sectional Transmission Electron Microscopy of Defects in Beta Silicon Carbide Thin Films

1985 ◽  
Vol 46 ◽  
Author(s):  
C.H. Carter ◽  
J.A. Edmond ◽  
J.W. Palmour ◽  
J. Ryu ◽  
H.J. Kim ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Silicon Carbide ◽  
Vapor Deposition ◽  
Defect Structure ◽  
Chemical Vapor ◽  
Processing Parameters ◽  
Cross Sectional ◽  
Transmission Electron

AbstractTechniques have been developed at NCSU for fabricating cross-sectional transmission electron microscopy (XTEM) foils from monocrystalline beta silicon carbide thin films grown by chemical vapor deposition. The results of the TEM observations are utilized to discern the efficacy of the various processing parameters in terms of film quality and defect structure as well as oxidation, ion implantation and annealing procedures.

The Morphology and Optical Characterizations of AlGaN/GaN Based on Al2O3 Prepared by MOCVD

2005 ◽  
Vol 475-479 ◽  
pp. 3713-3716
Author(s):  
M.C. Li ◽  
Lian Cheng Zhao ◽  
H.M. Li
Keyword(s):  
Thin Films ◽  
Optical Absorption ◽  
Chemical Vapor ◽  
Hexagonal Wurtzite Structure ◽  
Organic Chemical ◽  
Infrared Transmission ◽  
Visible Absorption ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Infrared Transmission Spectrum

The microstructure, optical absorption properties and luminescence function of GaN thin films grown on the sapphire substrate with the buffer layer of GaN by metal-organic chemical vapor deposition (MOCVD) have been studied by means of X-ray diffraction (XRD), transmission electron microscopy (TEM), infrared transmission spectrum, ultraviolet-visible absorption spectrum and photoluminescence. XRD results show that the crystal structure of GaN is hexagonal wurtzite structure. The thin films have preferred orientation in c axis with very high quality. TEM images of the cross-sectional specimen show that the thickness of every layer in the superlattice are uniform with the average period of 13.3 nm, but there are high-density dislocations in the superlattices region. From related optical experimental data, it is found that optical absorption edge is at about 370 nm. The theory calculation indicates that the five samples are direct transition semiconductor and band-gaps are about 3.4 eV. The refractive indexes of the samples increase with photon energy enhancing and decrease with the wavelength increasing. The results show that the extinction coefficients reach the lowest point at 370 nm. Photoluminescence test results show that superlattice has preferable luminescence property. In addition, the yellow luminescence is found in all samples.

Sign in / Sign up

Export Citation Format

Share Document