Low Temperature Poly-Si Layers Deposited by Hot Wire CVD Yielding a Mobility of 4.0 cm2V−1s−1 in Top Gate Thin Film Transistors

2000 ◽  
Vol 609 ◽  
Author(s):  
R.E.I. Schropp ◽  
J.K. Rath ◽  
B. Stannowski ◽  
C.H.M. Van Der Werf ◽  
Y. Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
High Electron ◽  
Hot Wire ◽  
High Electron Mobility ◽  
Cvd Method ◽  
First Time

ABSTRACTDirect deposition of polycrystalline silicon (poly-Si) thin films by the Hot Wire CVD method has been used for the first time for the fabrication of poly-Si top gate Thin Film Transistors (TFTs). The TFTs have a high electron mobility in saturation of up to 4 cm2V−1s−1 as well as a remarkably large ON/OFF ratio of up to 6 × 105.

Reliability of Low Temperature Polycrystalline Silicon Thin-Film Transistors with Ultrathin Gate Oxide

2007 ◽  
Vol 46 (7A) ◽  
pp. 4021-4027 ◽  
Author(s):  
Hitoshi Ueno ◽  
Yuta Sugawara ◽  
Hiroshi Yano ◽  
Tomoaki Hatayama ◽  
Yukiharu Uraoka ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Gate Oxide ◽  
Silicon Thin Film

Low-temperature, inkjet printed p-type copper(i) iodide thin film transistors

2016 ◽  
Vol 4 (43) ◽  
pp. 10309-10314 ◽  
Author(s):  
Chang-Ho Choi ◽  
Jenna Y. Gorecki ◽  
Zhen Fang ◽  
Marshall Allen ◽  
Shujie Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
P Type ◽  
First Time

Low temperature fabrication of printed p-type CuI TFTs was reported for the first time.

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